The invention discloses a
light emitting diode epitaxial
wafer and a manufacturing method thereof and belongs to the technical field of semiconductors. The
light emitting diode epitaxial sheet comprises a substrate, a low-temperature buffering layer, a high-temperature buffering layer, an N-type layer, an
active layer, a low-temperature P-type layer, an electronic
blocking layer, a high-temperature P-type layer and a P-type contract layer, wherein the low-temperature buffering layer, the high-temperature buffering layer, the N-type layer, the
active layer, the low-temperature P-type layer, theelectronic
blocking layer, the high-temperature P-type layer and the P-type contract layer are successively laminated on the substrate. The growth temperature of the low-temperature P-type layer is 720-790 DEG C. A
first insertion layer is arranged between the low-temperature P-type layer and the
active layer. The
first insertion layer is of an Al-GaN / GaN
superlattice structure with the period ofn, wherein 2<=n<=10. The growth temperature of the
first insertion layer is the same as that of the low-temperature P-type layer. A second
insertion layer is arranged between the low-temperature P-type layer and the electronic
blocking layer. The second
insertion layer is of a GaN structure doped with Al. The growth temperature of the second
insertion layer is 10-50 DEG C higher than the growth temperature of the low-temperature P-type layer. By setting the first insertion layer and the second insertion layer, production of defects is reduced and light emitting efficiency of the
light emitting diode can be improved.