Limitation-enhanced GaN-based deep ultraviolet laser

A deep ultraviolet and laser technology, applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems of increased activation energy, increased difficulty of P-type doping, and affecting the transmission of hole active regions

Inactive Publication Date: 2020-10-23
北京蓝海创芯智能科技有限公司
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Problems solved by technology

However, the activation energy of the Mg acceptor is relatively high, and with the increase of the Al component in the AlGaN material, the activation energy will increase accordingly, which will increase the diffic...

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  • Limitation-enhanced GaN-based deep ultraviolet laser
  • Limitation-enhanced GaN-based deep ultraviolet laser

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but the protection scope of the present invention is not limited thereto.

[0024] Such as figure 1 A confinement-enhanced GaN-based deep ultraviolet laser is shown, from bottom to top are N-type electrode 1, substrate 2, N-type lower confinement layer 3, N-type Al x Ga 1-x N lower waveguide layer 4, active region 5, P-type Al x Ga 1-x N upper waveguide layer 6 , P type electron blocking layer 7 , P type upper confinement layer 8 , P type ohmic contact layer 9 and P type electrode 10 . More specifically:

[0025] The N-type electrode 1 is made of Ti / Al / Ti / Au material with a thickness of 70 / 150 / 70 / 200nm.

[0026] Substrate 2 is an AlN substrate with a thickness of 100 μm.

[0027] N-type lower confinement layer 3 is grown on AlN substrate 2, and the material is Al 0.55 Ga 0.45 N, with a thickness of 2 μm.

[0028] N-type Al is grown on th...

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Abstract

The invention provides a limitation-enhanced GaN-based deep ultraviolet laser, which comprises an N-type electrode, a substrate, an N-type lower limiting layer, an N-type AlxGa1-xN lower waveguide layer, an active region, a P-type AlxGa1-xN upper waveguide layer, a P-type electron blocking layer, a P-type upper limiting layer, a P-type GaN ohmic contact layer and a P-type electrode from bottom totop in sequence. The N-type AlxGa1-xN lower waveguide layer and the P-type AlxGa1-xN upper waveguide layer are both of an Al component gradual change type, and through Al component gradient design ofthe N-type AlxGa1-xN lower waveguide layer and the P-type AlxGa1-xN upper waveguide layer, a light field is guided to be close to the active region, so that the optical loss is reduced, the limitationof a quantum well to carriers is enhanced, the electron leakage is inhibited, and the threshold value and the output power are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser devices, in particular to a confinement-enhanced GaN-based deep ultraviolet laser. Background technique [0002] GaN-based semiconductor materials include GaN, InN, AlN and their ternary and quaternary alloy compounds. The band gap is continuously adjustable from 0.7eV to 6.2eV. The luminescence spectrum covers the infrared to deep ultraviolet band. It is ideal for the preparation of GaN-based ultraviolet lasers. preferred material. Compared with traditional solid-state and gas ultraviolet lasers, GaN-based ultraviolet lasers have excellent characteristics such as fast response rate, long life, high efficiency, small size, low power consumption, energy saving and environmental protection, and good stability. Materials processing, disinfection and sterilization, ultraviolet lithography, biological detection and other fields have a wide range of applications, and are currently new hotsp...

Claims

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Application Information

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IPC IPC(8): H01S5/20
CPCH01S5/20H01S5/2054
Inventor 赵德刚梁锋王泓江
Owner 北京蓝海创芯智能科技有限公司
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