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CNTs@alpha-Fe2O3 heterojunction composite material-based acetone gas sensor and preparation method thereof

A gas sensor and composite material technology, applied in the direction of analyzing materials, material resistance, and material analysis through electromagnetic means, can solve the problems of low sensitivity and poor selectivity of single metal oxides, improve gas sensitivity characteristics, and increase utilization , Conducive to the effect of mass production

Active Publication Date: 2017-05-31
JILIN UNIV
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  • Abstract
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Problems solved by technology

[0004] The present invention aims to build a CNTs@α-Fe based 2 o 3 Heterojunction hierarchical structure composite materials, using the large specific surface area and longitudinal conductivity of CNTs to change the composite material morphology, grain size, increase carrier concentration and form barriers, etc., so as to overcome the low sensitivity of single metal oxides , the disadvantage of poor selectivity, realize the detection of low concentration acetone gas

Method used

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  • CNTs@alpha-Fe2O3 heterojunction composite material-based acetone gas sensor and preparation method thereof

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Embodiment 1

[0038] The sensitive material is CNTs@α-Fe 2 o 3 The specific manufacturing process of the acetone gas sensor made of heterojunction hierarchical structure composite material is as follows:

[0039] 1. First prepare a mixed acid solution for treating CNTs, wherein the volume ratio of concentrated sulfuric acid (98wt%) and concentrated nitric acid (68wt%) is 3:1. Take 0.1g of CNTs (sold by Sigma-Aldrich, 110-170nm in diameter, 5-9μm in length) into 30mL of mixed acid, ultrasonic for 30min, keep at 100°C for 5h, and cool down to room temperature (25°C) naturally , filtered, washed alternately with deionized water and ethanol, and dried for later use. Label the samples as F-CNTs.

[0040] 2. Prepare FeCl with a concentration of 0.1M 3 solution, the solvent is water. Take 20mL FeCl 3 Solution, add 10mg F-CNTs, ultrasonic 10min.

[0041] 3. Place the sonicated mixture in a water bath at 80°C and heat for 5 hours. After natural cooling, the resulting black precipitate was ce...

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Abstract

The invention discloses a CNTs@alpha-Fe2O3 heterojunction composite material-based acetone gas sensor and a preparation method thereof, and belongs to the technical field of gas sensors. The acetone gas sensor comprises an insulating alumina ceramic tube substrate with two parallel and separate annular gold electrodes on the outer surface, a semiconductor metal oxide gas sensitive material coated on the outer surface of the insulating alumina ceramic tube substrate and the gold electrodes, and a nichrome heating coil arranged in the insulating alumina ceramic tube, wherein each gold electrode is provided with a platinum wire; the sensitive material is a CNTs and alpha-Fe2O3 nano-rod-compounded heterojunction hierarchical structure nanomaterial. The sensor has the advantages of being simple in structure, low in price, relatively small in volume, solid and durable, is suitable for massive production; and the gas-sensitivity characteristic testing result shows that the sensor can detect low-concentration acetone, has excellent long-term stability and has an important application prospect in detection and alarming of acetone leakage in industrial production and medical detection.

Description

technical field [0001] The invention belongs to the technical field of oxide semiconductor gas sensors, in particular to a sensor based on CNTs@α-Fe 2 o 3 Acetone gas sensor of heterojunction hierarchical structure composite material and its preparation method. Background technique [0002] With people's attention to environmental pollution and industrial emissions, the real-time monitoring of toxic and harmful gases has received great attention. Among them, semiconductor oxide gas sensors have attracted extensive attention due to their excellent performance and convenient fabrication. In the past few decades, although the research on the semiconductor-like gas-sensing properties of metal oxides has achieved fruitful results, the research on high-performance, high-selectivity, and small-scale devices is still a challenge in the future. The sensitive mechanism of the oxide semiconductor gas sensor is mainly the change of semiconductor conductance caused by the adsorption o...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 孙鹏代明军刘凤敏高原周鑫卢革宇
Owner JILIN UNIV
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