The invention provides a method for optimizing a
NiCr alloy resistance
temperature coefficient, which comprises the following steps of: producing by adopting a thin film process, selecting an insulating substrate with a certain thickness, firstly entering a metallization process, preparing a series of
NiCr alloy thin film samples by adding a certain amount of
doping gas and changing the content of
argon in the NiCr metallization process, and then carrying out photoetching on the
NiCr alloy thin film samples in a photoetching process to obtain the NiCr
alloy resistance
temperature coefficient. The method comprises the following steps: photoetching an
electrode pattern by using a photoetching plate, carrying out secondary photoetching after an
etching process to obtain a
resistor pattern, carrying out thermal annealing on an insulating substrate engraved with the pattern under a vacuum condition at a certain temperature for a period of time, and after thermal annealing treatment, placing a
test article in a
hot plate to carry out
resistance test at different temperatures. And finally, the
metal film resistors prepared under different
argon contents are used at different temperatures, TCR is calculated and compared to obtain the optimized NiCr
alloy film
resistor, the NiCr film is deposited on the insulating substrate by adjusting the
argon content, and the resistance
temperature coefficient of the NiCr film can be further optimized on the existing performance.