26 results about "Ion beam sputtering" patented technology

The invention relates to the technical field of ion beam sputtering, in particular to an ion beam sputtering composite film control system and method. Comprising a parameter reverse solving module, a target material motion control module and an interface pollution inhibition module. The target component composition of the composite film and pre-stored target material physical parameter data are collected through the parameter reverse solving module, a reverse integral equation solving algorithm is utilized, beam spot shape parameters and target material motion track parameters are output, the target material motion control module establishes an elliptical beam spot and combined target dynamic coupling model, and the target material motion control module controls the target material motion. The interface pollution suppression module utilizes a laser emitter to emit high-energy pulse laser, etches a segmentation groove on the surface of a deposited film layer, reduces interface pollution, combines boundary beam attenuation, adjusts the beam intensity of an ion beam, and synergistically suppresses the interface pollution, so as to realize accurate control of the components of the composite film. And the component control precision and efficiency are improved.

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

Toner comprising a toner particle containing a binder resin, wherein the toner particle comprises a condensation product of an organosilicon compound, in time-of-flight secondary ion mass spectrometry (TOF-SIMS) of the toner particle, a normalized intensity of silicon ions (m / z 28) originating from the condensation product of the organosilicon compound, given by the following expression (I), of 7.00×10 -4 up to 3.00×10 -2 amounts; Normalized intensity λt of silicon ions (m / z 28) = {Ionic intensity λt (m / z 28) of silicon ions} / {Gesmation intensity λt from m / z 0.5 to 1850} a normalized intensity of silicon ions (m / z 28) by time-of-flight secondary ion mass spectrometry after sputtering the toner particles with an Ar-gas cluster ion beam Ar-GCIB under the following condition (A) 6.99×10 -4or less; (A) Acceleration voltage: 5 kV, Current: 6.5 nA, Grid size: 600×600 µm, Irradiation time: 5 seconds / cycle, Sputtering time: 250 seconds, the toner contains fine particles on the surface of the toner particles, and The fine particles of a polyvalent acid metal salt are a reaction product of a compound comprising at least one of the elements Ti and Al, and a polyvalent acid. wherein the condensation product of the organosilicon compound is a silane-modified resin R with the structure represented by the following formula (1); in formula (1) P 1 represents a styrene-acrylic resin segment or a polyester resin segment; L 1 represents a single bond or a divalent compound group; R 1 to R 3Each independently represents a hydrogen atom, a halogen atom, an alkyl group with 1 or more carbon atoms, an alkoxy group with 1 or more carbon atoms, an aryl group with 6 or more carbon atoms, or a hydroxy group; and m represents a positive integer; in a case where m is equal to or greater than 2, a plurality of L 1 , a plurality of R 1 , a plurality of R 2 and a plurality of R 3 each may be identical or different; however, Si is bonded to at least one carbon, and at least one of R 1 to R 3 is condensed with an organosilicon compound.

The invention provides a multi-target ion beam sputter coating device and a use method thereof.The device comprises a vacuum cavity, a base carrying disc and an auxiliary ion gun vertically opposite to the base carrying disc are arranged in the vacuum cavity, and the left side and the right side of the auxiliary ion gun are each provided with a main ion gun and a target material exchange mechanism; the target material exchange mechanism comprises a supporting frame, a target material base rotating by 360 degrees is arranged in the supporting frame, target materials are evenly distributed on the side, close to the main ion gun, of the target material base in the circumferential direction, a baffle is arranged on the side, close to the main ion gun, of the supporting frame, and a notch matched with the main ion gun is formed in the baffle. Target materials can be flexibly selected for thin film deposition according to needs, frequent manual target material replacement or equipment adjustment is not needed, time and labor cost are saved, and meanwhile thin film deposition continuity is ensured.

The invention discloses a metal-based nickel-chromium strain film as well as a preparation method and application thereof, and relates to the technical field of sensor strain films, the metal-based nickel-chromium strain film is prepared by adopting an ion beam sputtering method, and the specific method comprises the following steps: firstly, carrying out pre-sputtering, then carrying out formal sputtering, and depositing a nickel-chromium alloy strain film on an insulating layer film; and during pre-sputtering and formal sputtering, the voltage ranges from 500 V to 800 V, the acceleration voltage ranges from 180 V to 220 V, the current ranges from 160 mA to 200 mA, and the pre-sputtering time ranges from 90 min to 120 min. The strain film prepared by the preparation method of the nickel-chromium alloy strain film has the advantages of good resistivity batch consistency and strong interface bonding force, and the prepared nickel-chromium alloy film can be ensured to be small in roughness and good in film quality while the bonding force is ensured, so that the nickel-chromium alloy strain film has relatively good long-term stability.

The utility model belongs to the technical field of ion sputtering coating machines, and discloses a film thickness adjustable device of an ion sputtering coating machine, which comprises a vacuum coating chamber, a coating platform is arranged in the vacuum coating chamber, an ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber, and the ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber. A thickness adjusting assembly is mounted in the vacuum coating chamber and comprises a connecting plate, the connecting plate is mounted on the surface of the ion beam sputtering composite coating mechanism body, mounting plates are mounted on the bottom surface of the connecting plate, and a movable rod is rotationally connected between the two mounting plates; the surface of the movable rod is provided with a special-shaped baffle plate, and the special-shaped baffle plate is attached to a sputtering port of the ion beam sputtering composite coating mechanism body. The ion beam sputtering composite coating mechanism has the advantages that the coating thickness can be adjusted, manual observation is avoided, and the practicability is further improved.

The invention provides a ferroelectric memory and a preparation method thereof. The preparation method comprises the following steps: S1, depositing a bottom electrode layer on a substrate through an ion beam sputtering process; s2, depositing a ferroelectric layer through a magnetron sputtering process; in the ferroelectric layer deposition process, the oxygen content in the deposition atmosphere is adjusted by controlling the oxygen introduction amount, and then the concentration of oxygen vacancies in the ferroelectric layer is adjusted and controlled; s3, carrying out photoetching on the device; s4, depositing a top electrode layer through an ion beam sputtering process, and removing redundant photoresist and redundant metal to obtain a ferroelectric memory; between the S1 and the S2 or between the S2 and the S3, the method also comprises the following steps: depositing an oxide as an interface intercalation through an atomic layer deposition process. According to the invention, the problems of unstable interface and obvious wake-up effect caused by a large number of oxygen vacancies generated by the reaction of the electrode and the ferroelectric layer in the traditional ferroelectric memory structure are effectively solved, and the preparation of the high-performance ferroelectric memory with high residual polarization and high reliability is realized.

The invention provides a simulation method and system for sputtering a monocrystalline silicon target material based on a focused ion beam, and relates to the technical field of semiconductor material micro-nano machining, the method comprises the following steps: defining sputtering parameters including incident ion parameters, target material parameters and target material depth, and selecting an SRIM / TRIM calculation method; on the basis of the sputtering parameters, calculating an ion beam sputtering target material to generate distribution data; based on the distribution data, through integrated analysis of an integrated parameter optimization module and a damage evaluation model, the processing efficiency and the damage depth when the focused ion beam is used for processing the monocrystalline silicon target material are dynamically balanced; wherein the damage evaluation model selects sputtering parameters with the minimum defect influence and the etching efficiency higher than a preset threshold value by comparing defect density distribution, energy loss distribution and phonon energy loss distribution. Through a simulation framework based on the Monte Carlo method, collaborative optimization of parameters such as ion energy and target material thickness is realized, and the dynamic relationship between the sputtering yield and the damage depth is quantitatively analyzed.

A magnetoelectric storage element based on a PMN-PT ferroelectric / ferromagnetic composite film and a preparation method thereof, belonging to the field of semiconductor integrated circuit technology, wherein the preparation of a small-sized FeCo ferromagnetic film is to mask a specific pattern on a PMN-PT single crystal substrate by using ion beam deposition combined with a photolithography process; the PMN-PT single crystal piezoelectric substrate and the Fe 65 Co 35 The alloy target is placed in a sputtering chamber, and ion beam sputtering is used to deposit a ferromagnetic thin film. Compared to traditional non-volatile memory, the magnetoelectric memory device produced by this invention offers advantages such as low power consumption and fast read / write speeds, which are crucial for meeting the practical needs of future memory devices. The use of ion beam sputtering to produce layered composite thin film devices is simple and compatible with semiconductor processes.

The invention relates to a hemispherical harmonic oscillator mass imbalance trimming device and method, and the device comprises a vacuum chamber which is internally provided with a trimming station; the clamping unit comprises a rotary table and a plurality of clamping mechanisms, the rotary table can rotate around the first axis, the multiple clamping mechanisms are distributed in the circumferential direction of the first axis at intervals, and the clamping mechanisms clamp the harmonic oscillator and drive the harmonic oscillator to rotate around the sensitive shaft; an ion beam etching unit; the clamping mechanisms are connected with a shielding assembly, when the rotary table rotates, the multiple clamping mechanisms sequentially pass through the trimming station, the shielding assembly covers the clamped harmonic oscillator, the shielding assembly is provided with a trimming hole for an ion beam to pass through, and the ion beam emitted by the ion beam etching unit penetrates through the trimming hole in the shielding assembly located in the trimming station. And the light is emitted to the lip edge of the harmonic oscillator. According to the invention, the shielding assembly is arranged, so that the condition that the ion beam is sputtered to other harmonic oscillators which are not trimmed or trimmed to cause accidental damage can be avoided, and deep optimization of harmonic oscillator batch unbalance processing is realized.

The invention provides a low-resistivity film, a preparation method thereof and a super-atom beam auxiliary coating device. The preparation method comprises the following steps: providing a substrate; and bombarding the deposition surface of the substrate by using a super-atom beam in the process of depositing and forming the film on the surface of the substrate by sputtering a target material through an ion beam until the deposition of the film is finished. According to the method, the thin film deposition surface of the substrate is bombarded by the super-atomic beam in the deposition process, the energy of atoms on the deposition surface of the substrate can be increased by the super-atomic beam, so that the atoms are easily subjected to surface diffusion towards crystal grains with low-energy surfaces, and the low-resistivity thin film of which the crystal grain orientation is approximately consistent can be formed; in the process, the damage to the film layer can be avoided, and the compactness of the film is also improved.

This invention discloses an ion beam sputtered high-entropy alloy glass electrocatalytic electrode, its preparation method, and its application. The method includes: firstly, fabricating a nickel microgrid with a three-dimensional nanocone array structure using micro-nano lithography and electrodeposition techniques; then, using the obtained nickel microgrid as a substrate, sputtering and depositing FeCoNiCrMn high-entropy metallic glass on its surface via ion beam sputtering to obtain the catalytic electrode. The preparation method of this invention enhances the uniformity of the high-entropy metallic glass distribution and its adhesion to the substrate; therefore, this integrated catalytic electrode can be directly used as a working electrode. Simultaneously, the preparation method is highly controllable and reproducible, suitable for industrial production. The catalytic electrode prepared by this invention is mainly applied to the water electrolysis reaction in alkaline electrolytes, exhibiting excellent catalytic performance. Its multi-component synergistic effect and high-entropy effect give it high intrinsic catalytic activity and stability. Furthermore, the amorphous structure exposes abundant active sites.

A method for preparing a mid-infrared focal plane detector on the basis of Sn-doped PbSe quantum dots. The preparation of a mid-infrared focal plane detector involves: on an ROIC substrate, respectively using an ion beam sputtering method, a spin coating method, the spin coating method and the ion beam sputtering method to sequentially construct an Au bottom electrode, a PbS hole transport layer, an Sn-doped PbSe photosensitive layer and a PIN heterojunction of a ZnO electron transport layer; and finally, using the ion beam sputtering method to deposit an ITO top electrode. The method based on Sn-doped PbSe quantum dots has the advantage of high mid-infrared response; and the method can realize the preparation of low-cost, chip-scale and simple-process uncooled PbSe mid-infrared focal plane detectors.

The invention provides a regulation and control method for ion beam sputtering. The regulation and control method comprises the following steps that bias voltage is configured at a target end; the current film forming stress bias pressure is configured to compensate the beam pressure of the ion source; according to the use state of the ion source grid mesh and the target film forming rate, normal operation values of the current film forming stress beam pressure and the current film forming stress bias pressure are configured; obtaining a current film forming rate and a current film forming stress; if the current film forming rate is lower than the first rate threshold value or higher than the second rate threshold value, and / or if the current film forming stress is lower than the first stress threshold value or higher than the second stress threshold value, a beam pressure adjusting value and / or a bias pressure adjusting value are / is obtained through a minimum objective function. In addition, the service life of the grid mesh, the film forming efficiency and the film forming stress are balanced through the minimum objective function, the film forming efficiency and the film forming quality can be controlled while the service life of the grid mesh is considered, and the use performance and applicability of the method are improved.

To provide laser equipment including a resonator which is not reduced in performance and has little failure risk relating to a mirror, and to provide a laser treatment device.SOLUTION: A laser equipment 30 comprises: a columnar solid laser rod 31; a resonator including a first reflection film provided on a first end face of the solid laser rod 31 and a second reflection film provided on a second end face of the solid laser rod 31 on an opposite side of the first end face; and a flash lamp 32 which excites the solid laser rod 31. The first reflection film and the second reflection film are ion beam spluttering coat films capable of preventing infiltration of moisture from outside air. Reflectance of the first reflection film is lower than that of the second reflection film.SELECTED DRAWING: Figure 3

A method and system for atomic layer etching (ALE) are disclosed, utilizing a single gas or gas mixture without gas exchanges throughout the process. The plasma process chamber features an inductively coupled plasma (ICP) section for generating neutrals and a capacitively coupled plasma (CCP) section for ion-burst sputtering, separated by a grounded ion filter (GIF) that blocks ions while allowing neutrals and unreacted gases to pass. The system is optimized for forming high aspect ratio (HAR) structures.

The invention relates to the technical field of excimer lamps, and discloses a preparation method of a composite narrow-band filtering optical filter and an excimer nanoinstrument.The preparation method comprises the steps that a quartz glass substrate is cleaned, and the surface roughness Ra is made to be smaller than 1 nm; depositing a SiO2 layer on the quartz glass substrate by adopting an ion beam sputtering method to form a first buffer film layer; a high-refractive-index gamma-Al2O3 film layer with the thickness of 34.2 nm is formed on the first buffer film layer, then a low-refractive-index SiO2 film layer with the thickness not larger than 47.8 nm is formed on the high-refractive-index gamma-Al2O3 film layer, and the steps are cycled to obtain alternating deposition film layers; depositing on the alternately deposited film layer to form a termination Al2O3 film layer with the thickness of not more than 50nm; a SiO2 layer with the thickness not larger than 30 nm is deposited on the termination Al2O3 film layer to form a second buffer film layer; and forming an aluminum film layer on the second buffer film layer, and depositing a protective film layer on the aluminum film layer. According to the preparation method of the composite narrow-band filtering optical filter and the excimer nanometer, the effect that 222-nanometer-waveband far ultraviolet rays penetrate through the optical filter can be effectively improved, and the disinfection and sterilization effect can be improved.

The utility model discloses a special rotating rack for an ion sputtering coating machine, which belongs to the technical field of ion beam sputtering coating machines and comprises a coating box, a cover plate is mounted at the upper end of the coating box, a transmission component is mounted in the cover plate, a motor is mounted at the upper end of the cover plate, and the transmission component is mounted in the transmission component. The output end of the motor is fixedly connected with the transmission end of the transmission assembly, the side end of the coating box is movably connected with a sealing door plate, and the lower end of the transmission assembly is provided with a plurality of uniformly distributed rack assemblies. The film coating operation is synchronously carried out in a revolution and rotation mode, so that when a product is placed on the surface of the rack for coating, the product can be subjected to revolution rotation motion and also can be synchronously subjected to rotation rotation motion, raw materials can be more uniformly distributed on the surface during film coating, and the qualification rate of the product is further improved.

The invention provides a pressure-resistant low-roughness oxide three-waveband antireflection film for a sapphire window and a preparation method of the pressure-resistant low-roughness oxide three-waveband antireflection film. The preparation method comprises the following steps: S1, pretreating the sapphire substrate; s2, a low-refractive-index film and a high-refractive-index film are alternately plated through ion beam sputtering, a low-refractive-index target material is silicon oxide doped with aluminum oxide, the doping amount of the aluminum oxide is 1.1 wt%-1.3 wt% of the mass of the target material, and a high-refractive-index target material is tantalum oxide; s3, carrying out heat treatment after film coating; and S4, carrying out ion etching and protection treatment. The pressure-resistant low-roughness oxide three-waveband antireflection film for the sapphire window has good pressure resistance and environmental adaptability, and meanwhile, accurate regulation and control of a spectrum can be realized.

The application discloses a preparation method of embedded transparent metal micro-grid electrode and application thereof, uniformly spin-coats positive photoresist on clean transparent conductive glass, and obtains patterned photoresist through photoetching technology. The patterned photoresist is used as secondary mask, ion beam etching process is introduced, and a patterned groove is selectively etched out from the conductive layer. The etched sample is directly used for ion beam sputtering process, the patterned photoresist is used as tertiary mask, metal Cr and metal Ni are sputtered in sequence to fill the patterned groove. The embedded transparent metal micro-grid electrode is obtained. The method of selectively embedding non-rare metal micro-grid greatly improves the conductivity and mechanical stability of commercial ITO, the introduction of photoetching technology simplifies the preparation process and reduces the processing cost, and the prepared transparent metal micro-grid electrode has high light transmittance and high conductivity, and can meet the demand of current new electrochromic-energy storage devices.

The invention provides a germanium-arsenic-chalcogenide glass optical fiber 1064nm band-pass membrane as well as a preparation method and application thereof. Comprising the following steps: bombarding germanium-arsenic-sulfur glass fiber end face ion beams; depositing a band-pass film on the end surface by adopting an ion beam sputtering method; the end face of the optical fiber is shielded, and the ZnO target material and the SiO target material are subjected to pre-sputtering treatment; the sputtering energy of the ZnO target material is controlled to be 500-800 eV, the sputtering energy of the SiO target material is controlled to be 300-600 eV, and formal sputtering is conducted on the target material to form a band-pass film with the center wavelength being 1064 nm; the structure of the film system is Air / 1.25 L, 0.25 H (HL), 7 HHHHHHHHH (LH), 7 L (HL), 7 HHHHHHHHH (LH), 7 L (HL), 7 HHHHHHHHHH (LH) 7 / SUB, H is ZnO, and L is SiO. The technical problem to be solved is how to prepare a 1064nm band-pass film on the end face of a germanium-arsenic-sulfur glass optical fiber, realize efficient band-pass filtering of a 1064nm wave band, improve light transmittance and filtering precision, enhance adhesion between a film layer and a substrate, improve film layer density, reduce internal stress, improve laser damage resistance and long-term stable service capability, and reduce optical signal insertion loss. The application requirements of low-power signal transmission and wide temperature range are met, and the blank of the special band-pass film for the 1064nm wave band in the prior art is filled.

The present disclosure provides a laser device and a laser treatment device having a resonator that does not reduce performance and has little risk of malfunction associated with a mirror. A laser device (30) according to the present disclosure is provided with: a resonator including a columnar solid laser rod (31), a first reflective film provided on a first end surface of the solid laser rod (31), and a second reflective film provided on a second end surface of the solid laser rod (31) on the opposite side from the first end surface; and a flash lamp (32) that excites the solid laser rod (31). The first reflective film and the second reflective film are ion beam sputtering coating films capable of preventing intrusion of moisture from outside air. The reflectivity of the first reflective film is lower than the reflectivity of the second reflective film.

A laser device including a resonator including a columnar solid-state laser rod, a first reflective film provided on a first end face of the solid-state laser rod, and a second reflective film provided on a second end face of the solid-state laser rod opposite to the first end face; and a flash lamp configured to excite the solid-state laser rod. The first reflective film and the second reflective film are of an ion beam sputtered coating film capable of preventing moisture from entering from outside air. The first reflective film is lower in reflectance than the second reflective film.

The invention provides a high-aspect-ratio in-hole coating method and a super atom beam auxiliary coating device. The high-aspect-ratio in-hole coating method comprises the following steps: providing a substrate wafer with a hole; emitting an ion beam by using an ion source, bombarding the target material, enabling the target material to form sputtering atoms, depositing the sputtering atoms on the surface of the substrate wafer to form a coating film, and radiating the substrate wafer at a first angle along with the super-atom beam; the first angle is an included angle between the normal of the substrate wafer and a super-atom beam; the super-atomic beam is used for inhibiting the formation of a closed part at the orifice. Mild surface modification is completed through the super-atom beam, ion beam sputtering is assisted, the closed part deposited at the hole opening is effectively removed while film coating is conducted, the closed part does not need to be removed through a high-energy ion beam, and gaps are prevented from being formed in the hole.

The application discloses a high-performance middle-wave infrared optical thin film element preparation method and relates to the technical field of optical thin films. The method comprises the following steps: selecting an ion beam sputtering Si thin film as a high-refractive-index thin film material and selecting an ion beam sputtering SiO2 thin film as a low-refractive-index thin film material; obtaining optical constants of the ion beam sputtering Si thin film and the ion beam sputtering SiO2 thin film and a basic film system structure of a middle-wave infrared antireflection thin film; according to technical index requirements, optimizing the basic film system structure of the middle-wave infrared antireflection thin film to obtain the middle-wave infrared antireflection thin film; selecting Si material as a base material; coating the middle-wave infrared antireflection thin film on both sides of the base material to obtain a middle-wave infrared optical thin film element with super-low residual reflection and super-low surface shape error. The method realizes the manufacture of a middle-wave infrared optical thin film element with a large aperture, super-low residual reflection, super-low surface shape error and good environmental adaptability.

The invention provides a low-resistance tungsten film, a preparation method of the low-resistance tungsten film and a super-atom beam auxiliary coating device. The preparation method comprises the steps that a substrate is provided; forming a beta-phase tungsten deposition layer on the surface of the substrate through ion beam sputtering; and bombarding the beta-phase tungsten deposition layer by using a super-atom beam to carry out local thermal annealing to obtain an alpha-phase tungsten film layer. According to the method, local pulse high temperature is formed through bombardment of the super-atom beam, beta-phase tungsten is converted into low-resistivity alpha-phase tungsten, damage to a film layer is avoided, and the compactness of the film is further improved.