15 results about "Ion beam sputtering" patented technology

The present invention relates to the technical field of thermal imaging of mid-infrared focal plane detectors, and more particularly relates to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots. The mid-infrared focal plane detector is prepared on a readout integrated circuit (ROIC) substrate, and is composed of an Au bottom electrode, a PbS hole transport layer, a Sn-doped PbSe photosensitive layer, and a PIN heterojunction of a ZnO electron transport layer sequentially constructed by an ion beam sputtering method, a spin-coating method, a spin-coating method, and an ion beam sputtering method, respectively, and an indium tin oxide (ITO) top electrode finally evaporated by an ion beam sputtering method.

The invention provides a multi-target ion beam sputter coating device and a use method thereof.The device comprises a vacuum cavity, a base carrying disc and an auxiliary ion gun vertically opposite to the base carrying disc are arranged in the vacuum cavity, and the left side and the right side of the auxiliary ion gun are each provided with a main ion gun and a target material exchange mechanism; the target material exchange mechanism comprises a supporting frame, a target material base rotating by 360 degrees is arranged in the supporting frame, target materials are evenly distributed on the side, close to the main ion gun, of the target material base in the circumferential direction, a baffle is arranged on the side, close to the main ion gun, of the supporting frame, and a notch matched with the main ion gun is formed in the baffle. Target materials can be flexibly selected for thin film deposition according to needs, frequent manual target material replacement or equipment adjustment is not needed, time and labor cost are saved, and meanwhile thin film deposition continuity is ensured.

The invention discloses a metal-based nickel-chromium strain film as well as a preparation method and application thereof, and relates to the technical field of sensor strain films, the metal-based nickel-chromium strain film is prepared by adopting an ion beam sputtering method, and the specific method comprises the following steps: firstly, carrying out pre-sputtering, then carrying out formal sputtering, and depositing a nickel-chromium alloy strain film on an insulating layer film; and during pre-sputtering and formal sputtering, the voltage ranges from 500 V to 800 V, the acceleration voltage ranges from 180 V to 220 V, the current ranges from 160 mA to 200 mA, and the pre-sputtering time ranges from 90 min to 120 min. The strain film prepared by the preparation method of the nickel-chromium alloy strain film has the advantages of good resistivity batch consistency and strong interface bonding force, and the prepared nickel-chromium alloy film can be ensured to be small in roughness and good in film quality while the bonding force is ensured, so that the nickel-chromium alloy strain film has relatively good long-term stability.

The invention provides a ferroelectric memory and a preparation method thereof. The preparation method comprises the following steps: S1, depositing a bottom electrode layer on a substrate through an ion beam sputtering process; s2, depositing a ferroelectric layer through a magnetron sputtering process; in the ferroelectric layer deposition process, the oxygen content in the deposition atmosphere is adjusted by controlling the oxygen introduction amount, and then the concentration of oxygen vacancies in the ferroelectric layer is adjusted and controlled; s3, carrying out photoetching on the device; s4, depositing a top electrode layer through an ion beam sputtering process, and removing redundant photoresist and redundant metal to obtain a ferroelectric memory; between the S1 and the S2 or between the S2 and the S3, the method also comprises the following steps: depositing an oxide as an interface intercalation through an atomic layer deposition process. According to the invention, the problems of unstable interface and obvious wake-up effect caused by a large number of oxygen vacancies generated by the reaction of the electrode and the ferroelectric layer in the traditional ferroelectric memory structure are effectively solved, and the preparation of the high-performance ferroelectric memory with high residual polarization and high reliability is realized.

The invention relates to a hemispherical harmonic oscillator mass imbalance trimming device and method, and the device comprises a vacuum chamber which is internally provided with a trimming station; the clamping unit comprises a rotary table and a plurality of clamping mechanisms, the rotary table can rotate around the first axis, the multiple clamping mechanisms are distributed in the circumferential direction of the first axis at intervals, and the clamping mechanisms clamp the harmonic oscillator and drive the harmonic oscillator to rotate around the sensitive shaft; an ion beam etching unit; the clamping mechanisms are connected with a shielding assembly, when the rotary table rotates, the multiple clamping mechanisms sequentially pass through the trimming station, the shielding assembly covers the clamped harmonic oscillator, the shielding assembly is provided with a trimming hole for an ion beam to pass through, and the ion beam emitted by the ion beam etching unit penetrates through the trimming hole in the shielding assembly located in the trimming station. And the light is emitted to the lip edge of the harmonic oscillator. According to the invention, the shielding assembly is arranged, so that the condition that the ion beam is sputtered to other harmonic oscillators which are not trimmed or trimmed to cause accidental damage can be avoided, and deep optimization of harmonic oscillator batch unbalance processing is realized.

The invention provides a low-resistivity film, a preparation method thereof and a super-atom beam auxiliary coating device. The preparation method comprises the following steps: providing a substrate; and bombarding the deposition surface of the substrate by using a super-atom beam in the process of depositing and forming the film on the surface of the substrate by sputtering a target material through an ion beam until the deposition of the film is finished. According to the method, the thin film deposition surface of the substrate is bombarded by the super-atomic beam in the deposition process, the energy of atoms on the deposition surface of the substrate can be increased by the super-atomic beam, so that the atoms are easily subjected to surface diffusion towards crystal grains with low-energy surfaces, and the low-resistivity thin film of which the crystal grain orientation is approximately consistent can be formed; in the process, the damage to the film layer can be avoided, and the compactness of the film is also improved.

This invention discloses an ion beam sputtered high-entropy alloy glass electrocatalytic electrode, its preparation method, and its application. The method includes: firstly, fabricating a nickel microgrid with a three-dimensional nanocone array structure using micro-nano lithography and electrodeposition techniques; then, using the obtained nickel microgrid as a substrate, sputtering and depositing FeCoNiCrMn high-entropy metallic glass on its surface via ion beam sputtering to obtain the catalytic electrode. The preparation method of this invention enhances the uniformity of the high-entropy metallic glass distribution and its adhesion to the substrate; therefore, this integrated catalytic electrode can be directly used as a working electrode. Simultaneously, the preparation method is highly controllable and reproducible, suitable for industrial production. The catalytic electrode prepared by this invention is mainly applied to the water electrolysis reaction in alkaline electrolytes, exhibiting excellent catalytic performance. Its multi-component synergistic effect and high-entropy effect give it high intrinsic catalytic activity and stability. Furthermore, the amorphous structure exposes abundant active sites.

The invention provides a regulation and control method for ion beam sputtering. The regulation and control method comprises the following steps that bias voltage is configured at a target end; the current film forming stress bias pressure is configured to compensate the beam pressure of the ion source; according to the use state of the ion source grid mesh and the target film forming rate, normal operation values of the current film forming stress beam pressure and the current film forming stress bias pressure are configured; obtaining a current film forming rate and a current film forming stress; if the current film forming rate is lower than the first rate threshold value or higher than the second rate threshold value, and / or if the current film forming stress is lower than the first stress threshold value or higher than the second stress threshold value, a beam pressure adjusting value and / or a bias pressure adjusting value are / is obtained through a minimum objective function. In addition, the service life of the grid mesh, the film forming efficiency and the film forming stress are balanced through the minimum objective function, the film forming efficiency and the film forming quality can be controlled while the service life of the grid mesh is considered, and the use performance and applicability of the method are improved.

A method and system for atomic layer etching (ALE) are disclosed, utilizing a single gas or gas mixture without gas exchanges throughout the process. The plasma process chamber features an inductively coupled plasma (ICP) section for generating neutrals and a capacitively coupled plasma (CCP) section for ion-burst sputtering, separated by a grounded ion filter (GIF) that blocks ions while allowing neutrals and unreacted gases to pass. The system is optimized for forming high aspect ratio (HAR) structures.

The invention provides a pressure-resistant low-roughness oxide three-waveband antireflection film for a sapphire window and a preparation method of the pressure-resistant low-roughness oxide three-waveband antireflection film. The preparation method comprises the following steps: S1, pretreating the sapphire substrate; s2, a low-refractive-index film and a high-refractive-index film are alternately plated through ion beam sputtering, a low-refractive-index target material is silicon oxide doped with aluminum oxide, the doping amount of the aluminum oxide is 1.1 wt%-1.3 wt% of the mass of the target material, and a high-refractive-index target material is tantalum oxide; s3, carrying out heat treatment after film coating; and S4, carrying out ion etching and protection treatment. The pressure-resistant low-roughness oxide three-waveband antireflection film for the sapphire window has good pressure resistance and environmental adaptability, and meanwhile, accurate regulation and control of a spectrum can be realized.

The application discloses a preparation method of embedded transparent metal micro-grid electrode and application thereof, uniformly spin-coats positive photoresist on clean transparent conductive glass, and obtains patterned photoresist through photoetching technology. The patterned photoresist is used as secondary mask, ion beam etching process is introduced, and a patterned groove is selectively etched out from the conductive layer. The etched sample is directly used for ion beam sputtering process, the patterned photoresist is used as tertiary mask, metal Cr and metal Ni are sputtered in sequence to fill the patterned groove. The embedded transparent metal micro-grid electrode is obtained. The method of selectively embedding non-rare metal micro-grid greatly improves the conductivity and mechanical stability of commercial ITO, the introduction of photoetching technology simplifies the preparation process and reduces the processing cost, and the prepared transparent metal micro-grid electrode has high light transmittance and high conductivity, and can meet the demand of current new electrochromic-energy storage devices.

The invention provides a germanium-arsenic-chalcogenide glass optical fiber 1064nm band-pass membrane as well as a preparation method and application thereof. Comprising the following steps: bombarding germanium-arsenic-sulfur glass fiber end face ion beams; depositing a band-pass film on the end surface by adopting an ion beam sputtering method; the end face of the optical fiber is shielded, and the ZnO target material and the SiO target material are subjected to pre-sputtering treatment; the sputtering energy of the ZnO target material is controlled to be 500-800 eV, the sputtering energy of the SiO target material is controlled to be 300-600 eV, and formal sputtering is conducted on the target material to form a band-pass film with the center wavelength being 1064 nm; the structure of the film system is Air / 1.25 L, 0.25 H (HL), 7 HHHHHHHHH (LH), 7 L (HL), 7 HHHHHHHHH (LH), 7 L (HL), 7 HHHHHHHHHH (LH) 7 / SUB, H is ZnO, and L is SiO. The technical problem to be solved is how to prepare a 1064nm band-pass film on the end face of a germanium-arsenic-sulfur glass optical fiber, realize efficient band-pass filtering of a 1064nm wave band, improve light transmittance and filtering precision, enhance adhesion between a film layer and a substrate, improve film layer density, reduce internal stress, improve laser damage resistance and long-term stable service capability, and reduce optical signal insertion loss. The application requirements of low-power signal transmission and wide temperature range are met, and the blank of the special band-pass film for the 1064nm wave band in the prior art is filled.

The invention provides a high-aspect-ratio in-hole coating method and a super atom beam auxiliary coating device. The high-aspect-ratio in-hole coating method comprises the following steps: providing a substrate wafer with a hole; emitting an ion beam by using an ion source, bombarding the target material, enabling the target material to form sputtering atoms, depositing the sputtering atoms on the surface of the substrate wafer to form a coating film, and radiating the substrate wafer at a first angle along with the super-atom beam; the first angle is an included angle between the normal of the substrate wafer and a super-atom beam; the super-atomic beam is used for inhibiting the formation of a closed part at the orifice. Mild surface modification is completed through the super-atom beam, ion beam sputtering is assisted, the closed part deposited at the hole opening is effectively removed while film coating is conducted, the closed part does not need to be removed through a high-energy ion beam, and gaps are prevented from being formed in the hole.

The application discloses a high-performance middle-wave infrared optical thin film element preparation method and relates to the technical field of optical thin films. The method comprises the following steps: selecting an ion beam sputtering Si thin film as a high-refractive-index thin film material and selecting an ion beam sputtering SiO2 thin film as a low-refractive-index thin film material; obtaining optical constants of the ion beam sputtering Si thin film and the ion beam sputtering SiO2 thin film and a basic film system structure of a middle-wave infrared antireflection thin film; according to technical index requirements, optimizing the basic film system structure of the middle-wave infrared antireflection thin film to obtain the middle-wave infrared antireflection thin film; selecting Si material as a base material; coating the middle-wave infrared antireflection thin film on both sides of the base material to obtain a middle-wave infrared optical thin film element with super-low residual reflection and super-low surface shape error. The method realizes the manufacture of a middle-wave infrared optical thin film element with a large aperture, super-low residual reflection, super-low surface shape error and good environmental adaptability.

The invention provides a low-resistance tungsten film, a preparation method of the low-resistance tungsten film and a super-atom beam auxiliary coating device. The preparation method comprises the steps that a substrate is provided; forming a beta-phase tungsten deposition layer on the surface of the substrate through ion beam sputtering; and bombarding the beta-phase tungsten deposition layer by using a super-atom beam to carry out local thermal annealing to obtain an alpha-phase tungsten film layer. According to the method, local pulse high temperature is formed through bombardment of the super-atom beam, beta-phase tungsten is converted into low-resistivity alpha-phase tungsten, damage to a film layer is avoided, and the compactness of the film is further improved.