Preparation device and preparation method of high-flux combined material

Abstract

The invention discloses a preparation device and a preparation method of high-flux combined material. The preparation device comprises a target storage cavity, a preparation cavity and a target change cavity, wherein the target storage cavity is used for storing spare targets; the preparation cavity is sputtered on surfaces of the targets through ion beam and is re-sputtered on the surface of a substrate to deposit a plurality of film materials, so as to form a combined target chip precursor; the target change cavity transfers and stores the targets between the preparation cavity and the target storage cavity; interiors of the target storage cavity, the preparation cavity and the target change cavity are at vacuum state. The preparation device and the preparation method of the high-flux combined material avoid target pollution, and reduce the pollution to films by pollution sources of oxygen and the like in the preparation device, so that high-quality high-flux combined material chips can be obtained.

Description

technical field [0001] The invention relates to material preparation technology, in particular to a high-throughput composite material preparation device and a preparation method. Background technique [0002] The core of high-throughput combined material preparation technology is to simultaneously integrate and grow tens of thousands or even millions of materials with different components, structures and properties on a small substrate, and through automatic scanning or parallel rapid characterization technology Obtain key information such as material composition, structure and performance, quickly build a multi-material phase diagram or material database, and quickly screen out materials with excellent performance or find the "component-structure-performance" correlation of materials, so as to improve the efficiency of material research and development efficiency. Materials that simultaneously integrate and grow different components, structures, and properties on a small ...

AI Technical Summary

Problems solved by technology

[0005] In the above-mentioned ion beam sputtering coating device, although the "drum" target replacement module can complete the replacement of the target, due to the non-directionality of the movement of the atoms sputtered out, it is easy to cause contamination of the target, and then pollute the Prepared thin film precursor

However, due to the high purity requirement of the composite material chip precursor, the existence of impurities may increase the diffusion barrier in the low-temperature diffusion process, and at the same time, it is easy to damage the integrity of the epitaxial film lattice, causing a certain degree of lattice defects and affecting the functional properties of the film.

[0006] Moreover, in the preparation process of the composite material chip, since the low-temperature and high-temperature heat treatment processes are very important for the phase formation of the chip, the process often needs to be completed under certain atmospheric conditions, and gases such as oxygen and water vapor in the atmosphere will cause damage to the film components. Pollution, the above-mentioned ion beam sputtering coating device needs to take out the combined material chip under atmospheric conditions, so that the combined material chip is exposed to the air, which is easy to cause pollution to the combined material chip

[0007] In addition, the above-mentioned ion beam sputtering coating device can only build a small amount of limited targets in a high vacuum environment, and the replacement of targets usually requires opening the vacuum chamber, which also causes the targets to be exposed to atmospheric conditions. Due to the above problems, For some targets that are sensitive to oxygen, the device cannot be used, which reduces the range of use of the device

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