7 results about "Phase formation" patented technology

Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include gas-phase formation of a layer comprising an oxalate compound on a surface of the substrate. Portions of the layer comprising the oxalate compound can be exposed to radiation or active species that form exposed and unexposed portions. Material can be selectively deposed onto the exposed or the unexposed portions.

The invention belongs to the field of material forming, and particularly relates to a method for controlling the alpha-Si3N4 phase generation rate in a silicon powder nitriding process, which is characterized in that the time t for controlling the pressure in a sintering furnace to be reduced from a high point P2 to a low point P1 is taken as a target, and different working conditions are coped by coordinately controlling N2 gas flow, Ar gas flow, temperature and pressure parameters; finally, the silicon powder nitridation generation reaction rate is controlled. The adjustable range of coordinating and controlling the N2 gas flow, the Ar gas flow, the temperature, the pressure and other parameters is larger than that of controlling a single parameter, and the technical difficulties that the alpha-Si3N4 phase generation rate is difficult to measure and the alpha-Si3N4 phase generation rate is difficult to regulate and control through the single parameter are broken through. By controlling the generation rate of the alpha-Si3N4 phase in the sintering furnace, the content of the alpha-Si3N4 phase in the sintering reaction process is increased, and a basic raw material is provided for subsequent purification breakthrough of silicon nitride ceramic powder.

The invention relates to the technical field of preparation of transition metal carbide materials, in particular to a synthesis method of an M '1.33 R0. 67 M ''2AlC3 MAX phase and a preparation method of a two-dimensional M' 1.33 M'' 2C3 MXene material. Aiming at specific synthesis obstacles caused by high stability of carbides of high-inertia M elements such as Ta and the like, an R element is introduced as a phase forming accelerant, and a high-purity ordered MAX phase containing Mo and Ta elements, which cannot be obtained before, is successfully synthesized. The auxiliary phase forming effect of rare earth is critical and indispensable, and the effect is not necessary in an M element (such as Nb) system with high activity. The two-dimensional M '1.33 M ''2C3 MXene material which is prepared from the specific precursor, has an ordered vacancy structure and is high in performance has excellent conductivity, can be used as a carrier to be compounded with metal phosphide, and provides excellent electrocatalytic oxygen evolution performance.

This invention relates to the field of luminescent materials and discloses a dysprosium-activated garnet-based white phosphor, comprising Na, Dy, RE, Ga, In, and Ge, wherein the molar ratio of the metal elements is Na:Dy:RE:Ga:In:Ge = 1:2x:2 - 2x:2:1:2, where 0.01 ≤ x < 0.10, and x is the doping amount of dysprosium at the inert rare earth sites. The invention also discloses the dysprosium-activated garnet-based white phosphor and its preparation method, including: a. reduced solid-state synthesis reaction temperature: novel matrix... a. The solid-state synthesis reaction temperature is significantly reduced to the range of 1200-1250℃, and phase formation is achieved in just 3 hours with excellent crystallinity, thus reducing energy consumption and preparation costs; b. No co-solvent required: The preparation process of phosphors does not require the use of co-solvents, reducing environmental impact; c. One-step sintering synthesis: The preparation process is simplified to one-step sintering, improving preparation efficiency and the feasibility of the production process; d. No specific pressure and atmosphere requirements: The preparation process does not require specific pressure and atmosphere requirements, reducing the limitations and complexity of process conditions.

The invention discloses a preparation method for promoting phase formation of an REBCO superconducting material based on induction of a nucleating agent and the REBCO superconducting material. The method comprises the following steps that S1, RE2O3, BaCO3, CuO and a nucleating agent are weighed according to the stoichiometric ratio, the nucleating agent is REBa2Cu3O7, and the adding amount of the nucleating agent is 0.5%-20% of the total molar amount of REBCO; s2, mixing the mixed powder obtained in the step S1 to obtain uniform composite powder; s3, carrying out molding treatment on the composite powder obtained in the step S2 to obtain a green body; and S4, sintering the green body obtained in the step S3, and cooling to obtain the REBCO superconducting material. According to the invention, the nucleating agent with high lattice matching degree with the REBCO superconductive phase and good wettability is introduced into the REBCO basic raw material to play a role in promoting phase formation of the REBCO superconductor.