167 results about "Gibbs free energy" patented technology

An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.

A stack of a high-k gate dielectric and a metal gate structure includes a lower metal layer, a scavenging metal layer, and an upper metal layer. The scavenging metal layer meets the following two criteria 1) a metal (M) for which the Gibbs free energy change of the reaction Si+2/y M_xO_y→2x/y M+SiO₂ is positive 2) a metal that has a more negative Gibbs free energy per oxygen atom for formation of oxide than the material of the lower metal layer and the material of the upper metal layer. The scavenging metal layer meeting these criteria captures oxygen atoms as the oxygen atoms diffuse through the gate electrode toward the high-k gate dielectric. In addition, the scavenging metal layer remotely reduces the thickness of a silicon oxide interfacial layer underneath the high-k dielectric. As a result, the equivalent oxide thickness (EOT) of the total gate dielectric is reduced and the field effect transistor maintains a constant threshold voltage even after high temperature processes during CMOS integration.

A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

The invention relates to a conductive thickener and an electronic device and a solar battery comprising electrodes formed by the conductive thickener. The conductive thickener comprises conductive powder, a metal glass and an organic carrier, wherein, the metal glass comprises an alloy comprising at least two chemical elements selected from a chemical element having a low resistivity, a chemical element formed a solid solution with the conductive powder or a chemical element having a high oxidation potential, and wherein, the chemical element having the low resistivity has a resistivity about 100 micro-ohmmeter-cm, and the chemical element having the high oxidation potential has a Gibbs free energy absolute value about 100 kilojoule/moore or more.

The present invention provides a top emission type organic light emitting display apparatus in which manufacture it is possible to prevent the organic film from being oxidized when the upper transparent electrode is formed, and which is capable of emitting light at a low voltage. This organic light emitting display apparatus includes an organic light emitting layer and an upper electrode and a lower electrode sandwiching the said organic light emitting layer between them, and is of a structure in which the light emitted from the organic light emitting layer is taken out from the upper electrode side, wherein a buffer layer mostly made of an oxide with its Gibbs free energy generated at around the melting point being lower than −300 kJ/mol is provided between the organic light emitting layer and the upper electrode, the side of the organic layer which is in contact with the buffer layer being doped with an electron donative dopant.

A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering oxygen than other layers of the electrode stack. The Gibbs free energy of formation (ΔfG°) of an oxide of the oxygen-gettering layer is less (i.e., more negative) than the Gibbs free energy of formation of an oxide of the adjacent layers of the electrode stack. The oxygen-gettering layer reacts with oxygen present in the adjacent layers of the electrode stack, thereby preventing this oxygen from diffusing into nearby silicon layers to undesirably increase an SiO₂ interfacial layer thickness in the memory element and may alternately be selected to decrease such thickness during subsequent processing.

A computer aided diagnostic system and automated method diagnose lung cancer through modeling and analyzing the visual appearance of pulmonary nodules. A learned appearance model used in such analysis describes the appearance of pulmonary nodules in terms of voxel-wise conditional Gibbs energies for a generic rotation and translation invariant second-order Markov-Gibbs random field (MGRF) model of malignant nodules with analytically estimated characteristic voxel neighborhoods and potentials.

Provided is a zinc-plated steel sheet for hot pressing having outstanding surface characteristics, comprising: a steel foundation plate comprising a metal surface diffusion layer of which the Gibbs free energy reduction per mole of oxygen during oxidation is less than that of Cr; an aluminum-rich layer containing at least 30 wt. % of aluminium formed on the surface diffusion layer, and a zinc plating layer formed on the aluminum-rich layer. In this way, a metal having a low affinity for oxygen is coated to an effective thickness prior to annealing and thus the creation of annealing oxides at the surface of the steel sheet is suppressed and a uniform zinc plating layer is formed, and alloying of the zinc plating layer is promoted during press-processing heat treatment. Cracking in the steel foundation plate during hot press molding is prevented.

A metal precursor powder, a method of manufacturing a conductive metal layer or pattern, and an electronic device including the same, are provided, and in the metal precursor powder, the Gibbs free energy change of hydrogen removal at a temperature range of −25° C. to 25° C. is −100 kJ/mol to 300 kJ/mol.

The invention discloses an image set partitioning method based on sampling. The method comprises the following steps of: image selection: extracting characteristic vectors of color histograms of all images in an image set and performing characteristic vector clustering; extracting color distributions of the foreground and background of a sampled image; performing similarity matching on the sampled image with a target image; calculating the foreground probability of the target image based on the single sampled image; calculating the foreground probability of the target image; and constructing a Gibbs energy minimizing formula, resolving a result of a foreground or background, which corresponds to each pixel, through image partitioning, and partitioning the image according to the constructed Gibbs energy minimizing formula by using an image partitioning method. The method has the remarkable advantage that a large amount of user interaction required by foreground and background partitioning operation on each image in a large-scale image set can be reduced greatly.

The invention discloses a sintered ore FeO content detection method and a sintered ore FeO content detection system. The method comprises: obtaining a thermal image; extracting a key frame image in combination with a dust change rule at the tail portion of a sintering machine; according to the key frame image, extracting an interested infrared thermal image by utilizing the geometrical characteristics of a trolley at the tail portion of the sintering machine so as to obtain a sintered ore cross section infrared thermal image; based on the sintered ore cross section infrared thermal image, extracting the shallow characteristics and the deep characteristics for describing the quality of the sintered ore; establishing a sintering process multiphase thermodynamic model based on Gibbs free energy theorem; according to the multiphase thermodynamic model, obtaining the FeO content classification characteristics of the sintered ore at the highest temperature, and establishing a FeO content prediction model based on multiple heterogeneous characteristics; and real-timely and onlinely predicting the FeO content of the sintered ore by utilizing the shallow characteristics, the deep characteristics and the FeO content classification characteristics. By adopting the technical scheme, the technical problem that the FeO content of the sintered ore cannot be accurately detected in real time inthe prior art is solved, the FeO content can be accurately detected in real time, and the method has the characteristics of high precision and strong interpretability.

The invention belongs to the technical field of memories, and provides a resistance memory and a preparation method thereof. The resistance memory comprises a top electrode, a bottom electrode and a storage medium layer placed between the top electrode and the bottom electrode, the storage medium layer comprises a metal oxide layer based on a second metal material and a metal nitrogen oxide layer based on a first metal material, the absolute value of Gibbs free energy of the metal nitrogen oxide layer based on the first metal material is higher than that of Gibbs free energy of the metal oxide layer based on the second metal material, and the metal nitrogen oxide layer is partially oxidized at the contacting interface of a metal nitride layer based on the first metal material and the metal oxide layer based on the second metal material. The resistance memory has the advantages of high erasing frequency, high initial resistance and on resistance, large high-low resistance window and fine data retention, the storage performance of the resistance memory can be obviously improved, and the preparation method of the resistance memory is simple.

The invention discloses a high-strength face-centered cubic structure medium-entropy alloy and a preparation method thereof. The CoNiCu medium-entropy alloy comprises Co, Ni and Cu elements; a resultof respective comparison of different medium-entropy alloys in electron concentration and mixing enthalpy according to the Gibbs free energy and the phase formation law of the alloy shows that the CoNiCu medium-entropy alloy has the tendency to form a single-phase FCC structure, a CoNiCu medium-entropy alloy model is constructed based on the tendency, and the alloy is predicted to be a ductile material by a first-principles technique. The preparation method of the alloy comprises the following steps: batching, vacuum melting, suction casting, homogenization annealing and solid solution treatment. Co, Cr, and Cu with a purity of 99% or more are selected and are proportioned according to an equimolar ratio or an approximately equimolar ratio, the proportioned raw materials are placed in a vacuum smelting furnace and are multiply smelted, suction casting molding is carried out after the components are uniform, and the obtained casting undergoes homogenization annealing and solid solutiontreatment to obtain the CoNiCu medium-entropy alloy having a single face-centered cubic structure and having a room temperature compressive strength of above 1600 MPa and a compression ratio of above20%.

A negative-electrode active material characterized by containing a silicon oxide represented by a general formula SiO_x (0<x<2) and a silicate compound represented by a composition formula M_aSi_bO_c-m(OH)-n(H₂0), and a method for the production of a negative-electrode active material which includes a mixing step of mixing a silicon oxide that is represented by a general formula SiO_y (0<y<2) and a metal oxide, and a heat treatment step of performing a heat treatment on the mixture that is obtained in the mixing step in a non-oxidizing atmosphere and in which the negative absolute value of the standard Gibbs energy of the oxidation reaction of the metal oxide at the heating temperature in the heat treatment step is smaller than the negative absolute value of the standard Gibbs energy of the oxidation reaction of Si at the heating temperature in the heat treatment step.

A method of manufacturing a semiconductor device includes forming a semiconductor layer containing a semiconductor material having a first oxide-generating Gibbs free energy required to become an oxide; forming a first material for a gate insulator on the semiconductor layer, said first material containing an element having a second oxide-generating Gibbs free energy required to become an oxide and becoming insulative when the element is oxidized or nitrided; and annealing the first material in an atmosphere containing hydrogen atoms, or heavy hydrogen atoms, and oxygen atoms in a temperature range where the first oxide-generating Gibbs free energy is equal to or higher than the second oxide-generating Gibbs free energy.

The invention relates to the preparation of heat conduction materials, and belongs to the field of material processing. The method for preparing an anisotropy heat conduction block material by Gibbs free energy induction is characterized in that two-dimensional nanometer materials in a two-dimensional nanometer material dispersion liquid planar liquid film are subjected to directional arrangementand are solidified into an anisotropy film; after overlapping, hot briquetting is carried out to obtain the anisotropy heat conduction block material. Internal two-dimensional nanometer particles havethe advantages of higher heat transfer efficiency and higher speed. Especially when a temperature difference is high, compared with other heat conduction materials of which the internal nanometer particles are in disordered arrangement, the heat conduction block material prepared by the method is characterized in that the lateral ineffective thermal vibration of the two-dimensional nanometer particles on a micro-level can be lowered, the longitudinal thermal vibration frequency of nanometer particles is improved, heat transfer efficiency is improved, and the heat transfer coefficient of the anisotropy heat conduction block material can be 5300W/(m.K).

The invention relates to a method for predicting eutectic temperatures of nano Ag-Cu alloy systems in different sizes. The method includes: preparing Ag-Cu nano alloy particles according to a wet chemical method, coating with SiO2, subjecting the nano alloy particles to representation through TEM, and adopting a DSC (differential scanning calorimeter) for acquiring nano alloy size and melting information. By consideration of related nano particle surface effects, a relationship of corresponding nano particle gibbs free energy changing along with temperature and particle size is extrapolated onblock alloy gibbs free energy according to a CALPHAD method, a correction factor is adjusted according to experimental results, and accordingly a self-consistent related nano particle gibbs free energy describing expression is acquired and used for predicting Ag-Cu nano alloy eutectic temperature, and uniformity of calculative prediction results and experimental results is achieved.