A method for preparing a bimetallic stacked
barrier layer with adjustable
thermal expansion coefficient and improved stability is disclosed, relating to the field of thermoelectric device technology. The method includes the following steps: Nb and Cu
metal foils are stacked alternately to form a multilayer stacked structure, and
interfacial bonding is performed via
diffusion bonding to obtain an Nb-Cu
barrier layer; raw materials are weighed according to the atomic ratios of n-type and p-type
cobaltite thermoelectric materials, and the prepared raw materials are vacuum melted to obtain n-type and p-type
cobaltite ingots, respectively; the n-type and p-type
cobaltite ingots are respectively subjected to
melt spinning treatment to obtain corresponding n-type and p-type cobaltite powders; the obtained
barrier layer and cobaltite
powder are placed together in a mold, with the barrier layer located at the bottom of the mold and the n-type or p-type cobaltite
powder placed on top of the barrier layer; after flattening, hot-pressing
sintering is performed, followed by furnace cooling to obtain an n-type or p-type cobaltite thermoelectric material with a barrier layer on its surface.