82results about How to "Excellent thermoelectric conversion performance" patented technology

The invention belongs to a thermoelectric conversion technology field, specificly relating to a thermoelectric conversion battery, which solves the problem of a low converting rate of the thermoelectric conversion technical and a poor application effect in the existing technology. The thermoelectric conversion battery comprises heating poles for receiving electron, electron emitters and thermoelectric conversion materials between the heating poles and the electron emitters, wherein the emitters and heating poles are metallicl substance, and the thermoelectric conversion materials are made from pyrite. The said thermoelectric conversion battery of the invention can convert various heat energy into electric energy; it has an excellent sensitivity, even changes in the air temperature can make the thermal battery to generate current changes; it is a collection converter of ordinary thermal, so that the heating within 60-100 DEG C can get a very good thermoelectric conversion effect; and iy may use for a long period again and again.

An electrically conductive composition, containing (A) a carbon nanotube, (B) an electrically conductive polymer, and (C) an onium salt compound, an electrically conductive film using the composition, and a method of producing the electrically conductive film.

Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0!<=x<1, 0<w!<=1, 0.2<a<4, 0!<=y<4, 0.2<b<4 and 0!<=z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

A thermoelectric conversion device having a high thermoelectric conversion performance. In the thermoelectric conversion device, electrodes are arranged unlike the arrangements steered by conventional technical knowledge so that current flows in the interlayer direction of a laminar material. A thermoelectric conversion film is epitaxially formed. An electrically conductive layer and an electric insulating layer are alternated. Each electrically conductive layer has an octahedron crystal structure in which a transition metal atom M is positioned at the center and oxygen atoms are positioned at the vertices. The electric insulating layer is made of a metal element or crystalline metal oxide. The c-axis of the laminar material of the electrically conductive layer and electric insulating layer is parallel to the in-plane direction of the base, and the pair of electrodes are arranged so that current flows along the c-axis.

A thermoelectric conversion material containing a carbon nanotube and a conjugated polymer, in which the conjugated polymer at least has, as a repeating unit having a conjugated system, (A) a condensed polycyclic structure in which three or more rings selected from hydrocarbon rings and heterocycles are condensed, and (B) a monocyclic aromatic hydrocarbon ring structure, a monocyclic aromatic heterocyclic structure, or a condensed ring structure including the monocyclic structure; and a thermoelectric conversion element using the same.

A method of producing a thermoelectric conversion element which has, on a substrate, a first electrode, a thermoelectric conversion layer, and a second electrode, which method comprising a step of preparing a dispersion for the thermoelectric conversion layer containing a nano conductive material by subjecting at least the material and a dispersion medium to a high-speed rotating thin film dispersion method; and a step of applying the prepared dispersion on or above the substrate and then drying the dispersion; and a method of preparing a dispersion for a thermoelectric conversion layer, which method comprises dispersing a nano conductive material into the dispersion medium by subjecting at least the material and the medium to a high-speed rotating thin film dispersion method.

Provided is a thermoelectric conversion material including a plurality of kinds of phases including a first phase and a second phase which have elemental compositions different from each other. The first phase and the second phase have a skutterudite structure.

A thermoelectric conversion element which comprises a substrate having a porous anodized aluminum coating film and, deposited on the substrate, a thermoelectric conversion layer that comprises an inorganic oxide semiconductor or an element having a melting point of 300 DEG C or higher as a main component and that has a structure having voids; and a process for producing the thermoelectric conversion element.

A thermoelectric conversion element in which one end of an n-type thermoelectric conversion material and one end of a p-type thermoelectric conversion material are each bonded to a conductive substrate using a bonding agent, the n-type thermoelectric conversion material and the p-type thermoelectric conversion material being specific silicides, the bonding agent being a conductive paste containing conductive metals consisting of silver and at least one noble metal selected from the group consisting of gold, platinum, and palladium, as well as a thermoelectric conversion module comprising a plurality of these thermoelectric conversion elements and having a specific structure, achieve excellent thermoelectric conversion performance in an intermediate temperature range of room temperature to about 700° C., and performance degradation hardly occurs even when electric generation is repeated, making it possible to maintain the excellent performance over a long period of time.

A thermoelectric conversion material containing an electrically conductive polymer and a thermal excitation assist agent, wherein the thermal excitation assist agent is a compound that does not form a doping level in the electrically conductive polymer, an energy level of LUMO (lowest unoccupied molecular orbital) of the thermal excitation assist agent and an energy level of HOMO (highest occupied molecular orbital) of the electrically conductive polymer satisfy following numerical expression (I):0.1 eV≦|HOMO of an electrically conductive polymer|−|LUMO of a thermal excitation assistant agent|≦1.9 eVwherein, in numerical expression (I), |HOMO of an electrically conductive polymer| represents an absolute value of an energy level of HOMO of the electrically conductive polymer, and |LUMO of a thermal excitation assist agent| represents an absolute value of an energy level of LUMO of the thermal excitation assist agent, respectively.

Disclosed is a method for manufacturing a thermoelectric material having high thermoelectric conversion performance in a broad temperature range. The method for manufacturing a thermoelectric material according to the present disclosure includes forming a mixture by weighing Cu and Se based on the following chemical formula 1 and mixing the Cu and the Se, and forming a compound by thermally treating the mixture: <Chemical Formula 1>CuxSe where 2<x<2.6.

The present invention provides a complex oxide having a composition represented by the formula La1-xMxNiO2.7-3.3 or (La1-xMx)2NiO3.6-4.4 (wherein M is at least one element selected from the group consisting of Na, K, Li, Zn, Pb, Ba, Ca, Al, Nd, Bi and Y, and 0.01≦x≦0.8), the complex oxide having a negative Seebeck coefficient at 100° C. or higher. This complex oxide is a novel material which exhibits excellent properties as an n-type thermoelectric material.

The invention discloses a NbFeSb-based high-entropy thermoelectric material, a preparation method thereof and application thereof. The chemical formula of the NbFeSb-based high-entropy thermoelectricmaterial is Nb1-xMxFeSb1-ySny, x=0.1 to 0.8, y=0 to 0.3, and M comprises any 4 to 5 elements in V, Ti, Hf, Zr, Sc, Y, Ta and Mo elements. The preparation method comprises the steps of weighing and taking pure metal raw materials according to a stoichiometric ratio of the elements contained in the NbFeSb-based high-entropy thermoelectric material and carrying out melting and annealing treatment anddischarge plasma sintering. The NbFeSb-based high-entropy thermoelectric material of the invention has a low lattice thermal conductivity. The process conditions of the preparation method of the NbFeSb-based high-entropy thermoelectric material are easy to control, the stability of microtopography and physicochemical properties of the prepared NbFeSb-based high-entropy thermoelectric material areensured, the efficiency of preparation is high, and the production cost is reduced.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ'pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q' is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0@m@1; 0@n@7; 0<z@2 and 0<p@2.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0≦y<1, 0≦m≦1, 0≦a≦1, 0≦n<9, 0≦z≦4, 0≦b≦3 and 0<n+z+b.

This thermoelectric material is provided with a semiconductor substrate, a semiconductor oxide film that is formed on the substrate, and a thermoelectric layer that is arranged on the oxide film. The semiconductor oxide film is provided with a first nano-opening, and the thermoelectric layer is in the form of a plurality of semiconductor nano-dots piled up on the first nano-opening so as to have a particle packed structure. At least some of the plurality of semiconductor nano-dots have second nano-openings formed in the surfaces thereof, and are connected with each other through the second nano-openings, with the crystal orientations thereof being aligned with each other. This thermoelectric material can be produced through: a step wherein a semiconductor substrate is oxidized, thereby forming a semiconductor oxide film thereon; a step wherein a first nano-opening is formed in the oxide film; and a step wherein a plurality of semiconductor nano-dots are piled up on the first nano-opening by epitaxial growth. A thermoelectric material having excellent thermoelectric conversion performance can be achieved by this configuration.

The invention discloses a high-performance polyaniline base organic thermoelectric material and a preparation method thereof. The polyaniline base organic thermoelectric material with excellent thermoelectric conversion performance is obtained by polyaniline preparation, conductive additive preparation and conductive additive and polyaniline ball-milling composite process, and conductive additives are prepared from conductive particles with dispersing agents and coupling agents by multi-stage ball-milling. By adding the conductive particles with proper proportions and modified surfaces into a polyaniline substrate, the thermoelectric conversion performance of the polyaniline base organic thermoelectric material is effectively improved by 0.5-3 times.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ′z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0≦m≦1; 0≦n<9; 0<z≦2 and 0<a≦1.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x≦0.5, 0<a≦1 and 0≦z≦4.

Disclosed is a method of manufacturing a thermoelectric material having high thermoelectric conversion performance at a wide temperature range. The method of manufacturing a thermoelectric material according to the present invention comprises the following steps: forming a mixture by mixing copper and selenium according to the following chemical formula 1: Cu_xSe; and forming the mixture by heat treating the mixture. In chemical formula 1, 2<x<=2.6. The thermoelectric material can include an induced nano DOT (INDOT) as a copper containing particle. Here, INDOT represents a particle with a diameter, for example, between 1 nanometer and 100 nanometers which is spontaneously generated during a thermal material formation process. This nano DOT, that is INDOT, can exist on a grain boundary of a semiconductor.

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ′pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0≦m≦1; 0≦n≦7; 0<z≦2 and 0<p≦2.

The present invention discloses a novel compound semiconductor for use in a solar cell or as a thermoelectric material, among others, and a usage for same. The compound semiconductor according to the present invention can be represented by following chemical formula 1. [Chemical formula 1] InxCo4Sb12-n-zQ'nTez, wherein in the chemical formula 1, Q' is at least one element selected from a group consisting of O, S, and Se, and x is more than 0 and less than or equal to 0.5,n is more than 0 and less than or equal to 2, and z is more than 0 and less than or equal to 2.

An object of the present invention is to provide a thermoelectric conversion layer having excellent thermoelectric conversion performances (particularly, a power factor and a figure of merit Z). Another object of the present invention is to provide a composition for forming a thermoelectric conversion layer that is used for forming the thermoelectric conversion layer, and a thermoelectric conversion element and a thermoelectric conversion module including the thermoelectric conversion layer.The thermoelectric conversion layer according to an embodiment of the present invention is a thermoelectric conversion layer containing single-layer carbon nanotubes and a dopant, in which the single-layer carbon nanotubes contain semiconducting single-layer carbon nanotubes at a ratio equal to or higher than 95% and have a G / D ratio equal to or higher than 40, and the dopant is an organic dopant having a non-onium salt structure and has an oxidation-reduction potential equal to or higher than 0 V with respect to a saturated calomel electrode.