1393results about "Thermoelectric devices" patented technology

A conductorless charging and power system for electronic appliances and method for communicating power to a power receiver employing wireless energy transmission are disclosed. The remote charging system includes a power transmission unit, which transmits energy as a directional power beam, and a power receiver system that receives the transmitted energy. The power receiver system is preferably incorporated in an appliance and includes an energy receptor capable of receiving the wireless power beam and transferring the energy from the beam to an energy storage device included in the appliance. The power transmission unit receives and tracks a power request signal from the power receiver system to track the power receiver system location during energy transmission. Data streams may be incorporated into the wireless signals of the remote charging system, allowing the remote charging system to function as a communications pathway as well as a power delivery system.

Methods and apparatus for generating an information signal. Exemplary methods and apparatus may comprise (A) electrically associating at least one LED with a Seebeck power generator; (B) thermally associating the Seebeck power generator with a surface; and (C) heating the surface to cause the Seebeck power generator to generate electricity to energize the at least one LED. In one example, such methods and apparatus may be used to provide an indication of the temperature of a surface.

A tracking solar power system is disclosed. The tracking solar power system includes: a solar power substructure and a platform having a first degree of freedom. The solar power substructure is mounted on the platform in a manner such that it has a second degree of freedom relative to the platform. The solar power substructure may include a solar collector and a receiver arranged to receive energy from the solar collector. The receiver may be mounted in a manner that avoids shading of the solar collector during operation. The solar collector may have an area focus at the receiver. The solar power substructure may include a non-concentrating solar power substructure.

A radio frequency IC tag and a manufacturing method for the same includes an IC chip on which information is stored, and an antenna for transmitting the information that is stored on the IC chip. In the antenna, a power-feeding part on which the IC chip is mounted extends along a direction in which an electric current flows. Radiation parts are formed so that the width of the radiation parts becomes wider than that of the power-feeding part with respect to the longitudinal axis of the power-feeding part. The radiation parts extend from the power-feeding part, at both sides thereof, along the direction in which the electric current flows.

An apparatus for transferring electromagnetic energy intermediate a host device and a medium or free space adjacent to the apparatus in an impulse radio system includes: (a) an energy guiding means for guiding the electromagnetic energy; the energy guiding means is connected with the host device; (b) an electromagnetic energy channeling structure effecting the transferring and including a plurality of gap interfaces; and (c) a transition means for coupling the energy guiding means with at least one gap interface of the plurality of gap interfaces. The transition means conveys the electromagnetic energy intermediate the energy guiding means and the at least one gap interface. The at least one gap interface intersects the transition means in a substantially continuous curve in selected planes intersecting the gap interface and the transition means.

A reflector 38 includes a mirrored surface 48 and a frequency selective surface 46. The frequency selective surface 46 is arranged to reflect radiation of a first frequency band 52 and allow radiation of a second frequency band 50 to pass. The mirrored surface 48 is arranged to reflect radiation of the second frequency band 50. In this manner, the focal power for radiation of the first frequency band 52 is independent to the focal power for radiation of the second frequency band 50. Accordingly, the design of optical components associated with the second frequency band 50 can be undertaken independently of those associated with the first frequency band 52 so as to achieve the optimised focusing for each frequency band.

An apparatus for producing hydrogen may include a collector of radiation to concentrate solar radiation on a converter having an absorptivity to convert the solar radiation to thermal energy to drive a chemical process using a feedstock to dissociate into an output chemical and a byproduct. A separator separates the output and byproduct, after which a reactor reacts the output to form a storage chemical, reactive to produce energy but sufficiently stable for safe handling outside designation as an energetic material. The separator may have a porosity to substantially pass hydrogen and block oxygen and water. A sweep gas may sweep hydrogen away from the separation barrier to change equilibrium. Catalysts may reduce temperature of dissociation and a subsequent reaction to combine it in a more stable, storable form.

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is insensitive to supply voltage and a variation in the chip temperature. The power consumption of both circuits, i.e., the band-gap reference and the temperature sensor circuits, encompassing the combined sensor circuit is less than one μW. The combined sensor circuit can be used to monitor local or global chip temperature. The result can be used to (1) regulate DRAM array refresh cycle time, e.g., the higher the temperature, the shorter the refresh cycle time, (2) to activate an on-chip or off-chip cooling or heating device to regulate the chip temperature, (3) to adjust internally generated voltage level, and (4) to adjust the CPU (or microprocessor) clock rate, i.e., frequency, so that the chip will not overheat. The combined band-gap reference and temperature sensor circuit of the present invention can be implemented within battery-operated devices having at least one memory unit. The low-power circuits of the sensor circuit extend battery lifetime and data retention time of the cells of the at least one memory unit.

A memory cell includes a storage medium having a programmable thermal impedance, and a heater in thermal communication with the storage medium for programming the thermal impedance. In another aspect, a memory cell includes a storage medium having a programmable electrical impedance, and a heater in thermal communication with the storage medium for programming the electrical impedance. In a third aspect, a memory device includes a plurality of the memory cells in accordance with the first and/or second aspect of the present invention.

A switched current temperature sensing circuit (1) comprises a measuring transistor (Q1) which is located remotely of a measuring circuit (5) which applies three excitation currents (I₁,I₂,I₃) of different values to the measuring transistor (Q1) in a predetermined current sequence along lines (10,11). Resulting base/emitter voltages from the measuring transistor (Q1) are applied to the measuring circuit (5) along the same two lines (10,11) as the excitation currents are applied to the measuring transistor (Q1). Voltage differences ΔV_be of successive base/emitter voltages resulting from the excitation currents are integrated in an integrating circuit (36) of the measuring circuit (5) to provide an output voltage indicative of the temperature of the measuring transistor (Q1). By virtue of the fact that the measuring transistor (Q1) is excited by excitation currents of three different values, the effect of current path series resistance in the lines (10,11) on the output voltage indicative of temperature is eliminated. The predetermined current sequence in which the excitation currents are applied to the measuring transistor (Q1) is selected to minimize the voltages in the integrating circuit (36) during integration of the voltage differences ΔV_be.

A decoupled switched current temperature circuit with compounded DELTA Vbe includes an amplifier having an inverting input with corresponding non-inverting output and a non-inverting input with a corresponding inverting output; a PN junction connected to the non-inverting input through a first input capacitor and a voltage reference circuit is connected to the inverting input through a second input capacitor; a current supply includes a low current source and a high current source; a switching device applies the high current source to the PN junction and applies the low current source to the PN junction for providing the DELTA Vbe of the PN junction to the first capacitor; a first feedback capacitor is interconnected between the inverting output and the non-inverting input and a second feedback capacitor is interconnected between the non-inverting output and inverting input of the amplifier to define the gain on each of the inputs to produce a differential voltage across the outputs representative of the temperature of the PN junction; first and second reset switching devices discharge the first and second feedback capacitors, respectively, and a multi-phase switched device alternately interchanges the connection of the first and second input capacitors with the amplifier inputs for compounding the single DELTA Vbe .

A method of producing polymer/nanotube composites where the density and position of the nanotubes (11) within the composite ca be controlled. Carbon nanotubes (11) are grown from organometallic micropatterns. These periodic nanotube arrays are then incorporated into a polymer matrix (7) by deposing a curable polymer film on the as-grown tubes. This controlled method of producing free-standing nanotube/polymer composite films may be used to form nanosensor (3) which provide information regarding a physical condition of a material (20), such as an airplane chassis or wing, in contact with the nanosensor (3).

A thermoelectric cooling apparatus which includes a Peltier device or a thermoelectric element coupled to a hot source and a cold sink. The hot source dissipates heat produced by the thermoelectric element. The cold sink is coupled to a mass to be cooled. A means for supplying power to the thermoelectric element is provided and a means for selectively thermally coupling the thermoelectric element to the hot source is provided. Selectively thermally switching the thermoelectric element to the hot source allows heat to be dissipated to the hot source when the thermoelectric element possesses excess heat. Dissipating the excess heat when the excess heat is present allows higher efficiencies to be attained in thermoelectric cooling.

A temperature-based cooling device controller is implemented in an integrated circuit such as a microprocessor. The temperature-based cooling device controller includes a register to store a threshold temperature value, a thermal sensor, and clock adjustment logic to activate a cooling device in response to the thermal sensor indicating that the threshold temperature value has been exceeded. In a microprocessor implementation, the microprocessor contains a plurality of thermal sensors each placed in one of a plurality of different locations across the integrated circuit and an averaging mechanism to calculate an average temperature from the plurality of thermal sensors. Threshold adjustment logic increases the threshold temperature value to a new threshold temperature value in response to the thermal sensor indicating that the threshold temperature value has been exceeded. Threshold adjustment logic further lowers the new threshold temperature to detect decreases in temperature.

A thermowell mounting assembly and method which allow a finite-length thermowell tube to be precisely adjusted by length during field installation to a desired position within a machine, process unit, or other location to be evaluated by a thermocouple. The adjustable length thermowell protects the thermocouple from a harsh process environment while simultaneously facilitating temperature measurement by the thermocouple at the adjusted length of the thermowell. Adjustment of thermowell length is achieved by rotation of the thermocouple-thermowell assembly from a position exterior to a mounting flange connected to the machine or process unit.

A thermal absorption structure of a radiation thermal detector element may include an optically transitioning material configured such that optical conductivity of the thermal absorption structure is temperature sensitive and such that the detector element absorbs radiation less efficiently as its temperature increases, thus reducing its ultimate maximum temperature.

A temperature sensing circuit has numerous trip points in conformity with a temperature change without adding decrease resistance branches, so as to obtain a fine control based on the temperature change. Accordingly, when employed in a semiconductor memory device, the temperature sensing circuit substantially reduces the consumption of refresh electrical power in a stand-by state without decreasing the reliability of the semiconductor memory device.