213 results about "Diode voltage" patented technology

A temperature measurement device may be implemented by coupling a PN-junction, which may be comprised in a diode, to an analog-to-digital converter (ADC) that comprises an integrator. Different currents may be successively applied to the diode, resulting in different VBE values across the diode. The ΔVBE values thus obtained may be successively integrated. Appropriate values for the different currents may be determined based on a set of mathematical equations, each equation relating the VBE value to the temperature of the diode, the current applied to the diode and parasitic series resistance associated with the diode. When the current sources with the appropriate values are sequentially applied to the diode and the resulting diode voltage differences are integrated by the integrator comprised in the ADC, the error in the temperature measurement caused by series resistance is canceled in the ADC, and an accurate temperature reading of the diode is obtained from the output of the ADC.

A temperature sensor circuit and system providing accurate digital temperature readings using a local or remote temperature diode. In one set of embodiments a change in diode junction voltage (ΔVBE) proportional to the temperature of the diode is captured and provided to an analog to digital converter (ADC), which may perform required signal conditioning functions on ΔVBE, and provide a digital output corresponding to the temperature of the diode. DC components of errors in the measured temperature that may result from EMI noise modulating the junction voltage (VBE) may be minimized through the use of a front-end sample-and-hold circuit coupled between the diode and the ADC, in combination with a shunt capacitor coupled across the diode junction. The sample-and-hold-circuit may sample VBE at a frequency that provides sufficient settling time for each VBE sample, and provide corresponding stable ΔVBE samples to the ADC at the ADC operating frequency. The ADC may therefore be operated at its preferred sampling frequency rate without incurring reading errors while still averaging out AC components of additional errors induced by sources other than EMI.

A voltage booster and regulator usable with Dickson-type charge pump device is specifically adapted to maintain efficiency with both high and low supply voltages. For high voltage supplies (e.g., 2.6 volts or more), the charge pump reduces overall power consumption resulting in a more efficient design. For low voltage applications (e.g., for supply voltages less than 2.6 volts), the charge pump uses a booster circuit to increase a clock input potential beyond the supply voltage available to a typical Dickson array. Further, the charge pump avoids inherent diode voltage drops in a typical Dickson array.

The invention relates to a method for testing thermal resistance of a high-power silicon carbide diode, which comprises the following steps: putting an insulation substrate with a device to be tested in a temperature-controlled cabinet, regulating the temperature of the temperature-controlled cabinet to 25 DEG C, applying a transient monopulse current to the diode, and testing the diode voltage drop corresponding to different pulse current magnitudes; heating the temperature-controlled cabinet to 125 DEG C, measuring the diode voltage drop corresponding to different pulse current magnitudes, comparing with the values measured at 25 DEG C, and taking a maximum current on the premise of ensuring obvious change of voltage drop; dropping the temperature of the temperature-controlled cabinet to 25 DEG C, applying a direct current with the magnitude selected above to the diode, and measuring the diode voltage drop after the junction temperature becomes stable; changing the temperature of the temperature-controlled cabinet, and testing the diode voltage drop at this time by using pulse current until the diode voltage drop at a certain temperature is equal to the diode voltage drop when applying the direct current, thus, the temperature of the temperature-controlled cabinet at this time is the equivalent junction temperature; and computing the thermal resistance of the diode according to the equivalent junction temperature by using a thermal resistance computing formula.

A band-gap reference circuit is compensated for temperature dependent curvature in its output. A voltage across a diode with a fixed current is subtracted from a voltage across a diode with a proportional to absolute temperature (PTAT) current. The resultant voltage is then magnified and added to a PTAT voltage and a diode's voltage that has a complementary-to-absolute temperature (CTAT) characteristic, resulting in a curvature corrected hand-gap voltage. This allows for the band-gap reference circuit to be trimmed at a single temperature. This allows the circuit to be made with only a single trimmable parameter, which, in the exemplary circuits, is a resistance value.

Provided is a temperature-compensated circuit for a power amplifier through diode voltage control, in which a first resistor (Rref), a first diode (D1), and a second diode (D2) are connected to a reference voltage in series. The temperature-compensated circuit includes a second resistor (R1) connected to the reference voltage, a third resistor (R2) connected to the second resistor in series, a fourth resistor (Rc) having one terminal connected to the reference voltage, a fifth resistor (Re) having one terminal connected to ground, a bias transistor having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor, and a sixth resistor (Rf) connected between a series connection terminal between the first diode and the second diode, and the collector terminal of the bias transistor. The voltage of the collector terminal changes for compensation of a temperature.