41 results about "Diode voltage" patented technology

The invention relates to an ultra-low power consumption control method and system for a coal mine vibration sensor, and belongs to the technical field of dust treatment. The problems that a detection circuit cannot sleep and standby power consumption is too large due to continuous vibration signals are solved. According to the technical scheme, a vibration signal direct-current component is removed through an alternating-current coupling module, an alternating-current signal is converted into a one-way pulse signal through a rectification amplification module, and a stable direct-current voltage Vk is generated through a low-pass filtering module. The threshold value comparison module compares the Vk with a preset threshold value Vref in real time, and when the output level of the comparator jumps, the MCU is awakened to process the vibration state and sleep again. The system adopts a dual-mode switching mechanism: switching to a low-level wake-up mode after a high-level trigger processing vibration existence event, and switching to a high-level wake-up mode after a low-level trigger processing vibration disappearing event. According to the method, deep dormancy in a continuous vibration environment is realized, invalid wake-up times are reduced, the influence of diode voltage drop is eliminated, and the target of ultra-low standby power consumption is achieved.

The DRAM temperature monitoring self-refresh circuit and the DRAM provided by the embodiments of the present disclosure comprise: a self-refresh enabling module, which outputs a clock signal to a reference voltage generating module and a logic module upon receiving a self-refresh enabling signal; the reference voltage generating module determines a first clock sampling signal according to the received clock signal, and generates a reference voltage to a comparison module according to the first clock sampling signal; the comparison module outputs a comparison signal to the logic module according to the reference voltage and a diode voltage; the logic module generates a sampling signal to collect the first clock sampling signal of the reference voltage generating module at a first time according to the clock signal and the comparison signal when the comparison signal is at a high level, so as to generate a temperature identification signal according to the first clock sampling signal, and determine a chip refresh clock according to the temperature identification signal and the clock signal, and generates a reset signal to the reference voltage generating module at a second time, so as to reset the first clock sampling signal of the reference voltage generating module.

The invention provides a SiC MOSFET DC power cycle accelerated life test system and method. The system comprises a DC power supply, a main power circuit, a conduction voltage drop measurement circuit and a controller. The main power circuit comprises N device sub-circuits which are connected in parallel, and each device sub-circuit is provided with a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor); the conduction voltage drop measuring circuit comprises N measuring sub-circuits which are respectively connected with the SiCMOSFETs of the N device sub-circuits; the measurement sub-circuit is used for measuring the conduction voltage drop of the SiC MOSFET when the connected device sub-circuit is switched on and the body diode voltage drop of the SiC MOSFET when the connected device sub-circuit is switched off in a preset cycle period; the controller is used for controlling the N device sub-circuits to be sequentially switched on within the power-on time, and only one device sub-circuit is switched on; and obtaining the body diode voltage drop sequence of the SiC MOSFET in the preset cycle period collected by each measurement sub-circuit, thereby determining the junction temperature sequence of the SiC MOSFET of each device sub-circuit. According to the invention, accelerated life tests of SiC MOSFETs under a plurality of different working conditions can be realized at the same time, and the test efficiency is improved.

A junction temperature calibration method, junction temperature detection method and device for an IGBT device belong to the technical field of junction temperature calibration, and the method comprises the following steps: obtaining IGBT junction temperature calibration data; wherein the IGBT junction temperature calibration data comprises conduction voltage drop, junction temperature and conduction current; fitting a junction temperature calibration fitting function according to the IGBT junction temperature calibration data, and determining the relationship among the conduction voltage drop, the junction temperature and the conduction current to obtain a junction temperature calibration relational expression; wherein the junction temperature calibration fitting function is constructed through a diode voltage drop calculation formula and an MOSFET voltage drop calculation formula. The junction temperature calibration fitting function is established based on the physical principle in the IGBT, and the problems that an existing junction temperature calibration function is poor in precision and the calibration process is complex are solved.

A method (100) for determining a capacitively smoothed rotor current of an inductive transformer (1) of a separately excited electrical machine is disclosed, preferably for controlling the capacitively smoothed rotor current for driving a rotor (40) of the separately excited electrical machine. The method comprises: determining a capacitor voltage (110) of a secondary intermediate circuit capacitor (22) of the inductive transformer (1) using a primary current of the inductive transformer (1), an equivalent circuit of a transformer (30) of the inductive transformer (1), and a diode voltage of a first diode (21).1) of a rectifier circuit (21) of the inductive transformer (1); Determining a transmission power (120) of the inductive transformer (1) using the primary current and a primary voltage of the inductive transformer (1); Determining a rotor resistance (130) using the capacitor voltage, the transmission power and detected disturbance signals of the rotor (40); and Determining the rotor current (140) using the capacitor voltage, the rotor resistance and the disturbance signals.

A method for controlling the rotational speed or the torque of a motor to protect a suppressor diode in a control device of a vehicle, wherein the suppressor diode converts recuperation energy of the motor into thermal energy comprises determining the current junction temperature and / or diode voltage of the suppressor diode; and controlling the rotational speed or the torque of the motor by means of the current junction temperature and / or diode voltage in such a way that the junction temperature of the suppressor diode does not exceed a predetermined junction temperature limit value.

According to the DRAM temperature monitoring self-refresh circuit and the DRAM provided by the embodiment of the invention, a self-refresh enable module outputs a clock signal to a reference voltage generation module and a logic module when receiving a self-refresh enable signal; the reference voltage generation module determines a first clock sampling signal according to a received clock signal, generates a reference voltage according to the first clock sampling signal and sends the reference voltage to the comparison module; the comparison module outputs a comparison signal to the logic module according to the reference voltage and the diode voltage; when the comparison signal is at a high level, the logic module generates a sampling signal at a first moment according to the clock signal and the comparison signal, collects a first clock sampling signal of the reference voltage generation module, generates a temperature identification signal according to the first clock sampling signal, and determines a chip refresh clock according to the temperature identification signal and the clock signal; and generating a reset signal to the reference voltage generation module at a second moment so as to reset the first clock sampling signal of the reference voltage generation module.

This invention discloses an LLC resonant converter with a wide output voltage range based on a voltage doubler rectifier, applicable to DC fast charging of new energy vehicles. The converter achieves primary-side inversion and secondary-side rectification topology reconfiguration through switch drive signals, enabling wide-range voltage output in four operating modes. The primary side can switch between half-bridge and full-bridge inversion modes, while the secondary side can switch between full-bridge, voltage doubler, and voltage quadruple rectifier modes. This invention reduces diode voltage stress, possesses self-balancing capability of the voltage doubler capacitor, and achieves soft switching across the entire voltage range. Ultra-wide voltage gain is achieved within a narrow frequency adjustment range across the entire voltage range through simple pulse frequency modulation (PFM), allowing the converter to adapt to the charging needs of new energy vehicles with different voltage platforms.

The invention discloses an on-resistance detection circuit and system of a gallium nitride power switch tube. The circuit comprises a voltage output circuit, a capacitor, a first voltage clamping circuit, a charging diode, a discharging diode, a voltage detector and a control unit. When the gallium nitride power switch tube is disconnected, the capacitor is charged, the capacitor is connected with the source electrode and the drain electrode of the gallium nitride power switch tube in parallel, and the first voltage clamping circuit limits the voltage between the source electrode and the drain electrode of the gallium nitride power switch tube by limiting the voltage at the two ends of the capacitor. Therefore, the voltage between the source electrode and the drain electrode is limited when the gallium nitride power switch tube is switched off. When the gallium nitride power switch tube is switched on, the anode end voltage of the discharge diode can be detected based on the voltage detector, the tube voltage drop of the discharge diode is subtracted to obtain the switch-on voltage of the gallium nitride power switch tube, and the switch-on resistance of the gallium nitride power switch tube is calculated based on the output current of the gallium nitride power switch tube. According to the scheme, the on-resistance detection precision of the gallium nitride power switch tube can be improved.

The invention discloses a micropower-oriented high-efficiency dual-frequency omnidirectional circularly polarized radio frequency rectification antenna. The antenna comprises a receiving antenna unit and a dual-frequency rectification circuit unit which are connected with each other. The receiving antenna adopts a dual-frequency omnidirectional circular polarization design; the double-frequency rectification circuit comprises a diode branch and a load branch which are connected in parallel. The diode branch comprises a coupling microstrip line, a pilot frequency impedance conversion network and a dual-frequency harmonic suppression structure which are connected in sequence; the load branch is formed by connecting a straight-through filter with a load in series. The double-frequency harmonic suppression structure forms a band-stop characteristic at the secondary harmonic of the double working frequency points; the pilot frequency impedance conversion network realizes a double-frequency-point same-input impedance characteristic; the coupling microstrip line enhances the voltage amplitude of the diode so as to improve the rectification efficiency of the circuit under the condition of micro input power. The antenna has good omnidirectivity and circular polarization performance, and can collect dual-frequency, multi-direction and multi-polarization electromagnetic waves; and meanwhile, the rectifier has the advantages of high rectification efficiency, small size and compact structure under a micro-input power condition, and better meets the requirement of collecting weak radio frequency energy in an actual scene.

The invention belongs to the technical field of DC-DC boost, and relates to a high-efficiency boost converter, a control method thereof and application of the high-efficiency boost converter in a photovoltaic or fuel cell power generation system. The converter is composed of two inductors, three switching tubes, six capacitors, six diodes and a current-limiting resistor, automatic current sharing of the input inductors can be achieved, input current ripples are small, the voltage gain reaches 6 / (1-D), the voltage stress of the switching tubes is Uo / 6, the voltage stress of the diodes is Uo / 3, current spikes and voltage spikes do not exist, and therefore the converter can be applied to large-scale production. And soft start and switch tube common-ground driving can be realized.

The utility model provides a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) capable of reducing the voltage drop of a body diode. The lower side surface of an epitaxial layer is connected to the upper side surface of a silicon carbide substrate; a first groove is formed in the epitaxial layer; the P-type base region is arranged in the first groove, and a second groove is formed in the P-type base region; the N + source region is arranged in the second groove; the P + source region is arranged in the second groove, and the outer side surface of the P + source region is connected to the inner side surface of the N + source region; the lower side surface of the gate oxide layer is connected to the N + source region, the P-type base region and the epitaxial layer; the lower side surface of the polycrystalline silicon electrode layer is connected to the upper side surface of the gate oxide layer; the lower side surface of the first contact metal layer is connected to the N + source region; the lower side surface of the second contact metal layer is connected to the P + source region, and the second contact metal layer is connected to the first contact metal layer; the metal work function of the first contact metal layer is smaller than that of the second contact metal layer; and on the basis of reducing the on resistance, the forward voltage drop of the body diode is reduced, and the loss of the MOSFET when being applied in a circuit is also reduced.

The invention relates to a test method for simulating a motor load by a refrigerator controller, which comprises an integral closed-loop test system consisting of a computer, a direct-current stabilized power supply, the refrigerator controller and a simulation load device, a singlechip outputs three paths of Hall signals to the refrigerator controller, and the controller generates a PWM (Pulse-Width Modulation) signal after receiving the Hall signals; a three-phase motor driving signal is output to a simulation load, an ADC input signal capturing device of the simulation load collects three paths of AD signals, PWM duty ratio and frequency, required parameters are used for simulating temperature measuring diode voltage in real time through a DAC output algorithm and a simulation temperature measuring diode DAC, the temperature measuring diode voltage is fed back to a controller, and closed-loop control is formed. According to the invention, the simulated load is used for simulating the motor performance of the refrigerating machine and replacing the refrigerating machine motor to carry out the closed-loop control test of the temperature control function of the controller, and the simulated load is used for replacing the refrigerating machine with relatively high price, so that the price is low, the test cost is greatly reduced, and the test efficiency is also greatly improved.

An electrostatic discharge protection device includes a diode, a voltage clamping component, an electronic component, a first pin, and a second pin. The diode includes a first doped area of a first conductivity type and a second doped area of a second conductivity type opposite to the first conductivity type. The voltage clamping component is electrically connected to the first doped area. The electronic component includes a first region of the first conductivity type, a second region of the second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type. The first region is electrically connected to the second doped area. The second region is electrically connected to the first doped area and the voltage clamping component. The fourth region is electrically connected to the voltage clamping component.

A method (100) for determining a channel resistance value of an electronic semiconductor switching element (M1) is disclosed, comprising: determining a diagnostic voltage value (U) DESAT ) (110) based on a provided diode voltage value (U) D,DESAT ) of a diode (D DESAT ) a diagnostic circuit (20); and a determination of the channel resistance value (R) DS ) (120) based on a calculation of the diagnostic voltage value (U DESAT ), a provided evaluation voltage value (V DESAT ) the diagnostic circuit (20) and a provided load current value (I LOAD ) of the electronic semiconductor switching element (M1). Also disclosed is a computing unit (30) configured to execute the method and an electronic circuit device (10) with the computing unit (30).

The application discloses a kind of permanent magnet synchronous motor position sensorless inverter nonlinear compensation control system and method, the method first establishes the accurate voltage source type inverter nonlinear model including dead zone, switching device on-off delay and switch tube and diode voltage drop;Second, for the mapping relationship of D( i x ) and D( i x / 2), a kind of based on q Shaft current injection method is proposed, the nonlinear compensation of voltage source type inverter is realized;Finally, with rotor position estimation accuracy as the basis for judging the nonlinear compensation effect of inverter, complete low-speed working condition position sensorless control inverter nonlinear compensation.Compared with the conventional method, the inverter nonlinear compensation method provided by the application can significantly improve the running performance of permanent magnet synchronous motor position sensorless control in extremely low speed interval, effectively reduce rotor position estimation error.

The utility model discloses a current-limiting retraction protection circuit, which relates to the field of switching power supply current-limiting protection and comprises a current detection circuit, a current reference setting circuit and an error amplification circuit, the current reference setting circuit comprises a first operational amplifier, a first diode, a voltage detection circuit and a maximum output current setting circuit; the input end of the error amplification circuit, the output end of the voltage detection circuit and the anode of the first diode are connected with the inverted input end of the first operational amplifier, and the cathode of the first diode is connected with the output end of the first operational amplifier; the in-phase input end of the first operational amplifier is connected with the output end of the maximum output current setting circuit; the error amplification circuit is used for comparing the output end voltage of the current detection circuit with the output end voltage of the current reference setting circuit. A high-precision resistor and a low-offset-voltage operational amplifier are used, so that an output current retraction point and a maximum current limiting point can be accurately set.

The invention relates to a CIGS (Copper Indium Gallium Selenide) battery photovoltaic module adopting a bypass diode structure and a preparation method of the CIGS battery photovoltaic module, and solves the problems that a diode needs to be welded between every two battery pieces to inhibit a hot spot effect, the CIGS module is easy to damage and difficult to maintain, and the output power is influenced in the conventional CIGS module. The device comprises a plurality of CIGS battery photovoltaic modules which are connected in series or in parallel, each CIGS battery photovoltaic module comprises a front film, a conductive grid is arranged on each front film, a plurality of CIGS battery pieces which are connected in series through the conductive grids are attached to each front film, and a positive bus bar and a negative bus bar are arranged at the two ends of the conductive grid on the front film of each CIGS battery photovoltaic module respectively. The end parts of the same sides of the positive bus bar and the negative bus bar respectively extend outwards and are provided with diode extension circuits; and bypass diodes are connected in series in the diode extension circuits in a welding manner. According to the invention, the connection and configuration of the battery pieces are simplified, and the requirement for complex electrical connection is also reduced; moreover, the use of diodes is effectively reduced, and the power loss of the module caused by the voltage drop of the diodes is reduced.

The application discloses an integrated amplifier circuit, which comprises an input signal conditioning module, a front-stage signal amplification module, an intermediate signal amplification module and a power output module connected in sequence. The input conditioning module is isolated from direct current through double-coupling capacitors, and impedance matching and current-voltage conversion are completed through resistors, so that direct current interference and input waveform distortion are eliminated. The front stage adopts a double-NPN triode amplification structure matched with a diode voltage-stabilized bias to realize primary amplification of weak pulse signals. The intermediate stage completes secondary signal amplification through combined triodes and relies on a compensation capacitor to suppress self-oscillation. The power output module adopts a double-NPN triode push-pull structure to improve signal driving capacity and simultaneously has overload protection and direct current isolation output functions. The circuit has the advantages of simple structure, strong anti-interference performance, excellent amplification precision and driving performance, and can effectively improve the problems of distortion and easy self-excitation of traditional circuits, and is suitable for weak pulse signal amplification scenes.

This invention discloses an apparatus for measuring oxygen saturation. The apparatus includes a circuit system configured to: measure a first diode voltage at a light-emitting diode (LED) when a first current is applied through the LED; measure a second diode voltage at the LED when a second current is applied through the LED; and measure a third diode voltage at the LED when a third current is applied through the LED. The circuit system is further configured to: determine a series resistance based on the first, second, and third diode voltages; and determine the intensity of a received photon signal corresponding to an output photon signal generated using the LED. The circuit system is further configured to determine the oxygen saturation level based on the intensity of the received photon signal and the series resistance.

The application discloses a variable threshold temperature switch circuit, and belongs to the field of integrated circuits, comprising a bandgap reference bias module, a PTAT voltage generation module, a CTAT voltage generation module and a comparator; the bandgap reference bias module is designed based on a bandgap reference source model, combines a common source and common gate structure, realizes a PTAT bias current with a positive temperature change of a high power supply rejection ratio, and provides bias for other modules; the PTAT voltage generation module is provided with a PTAT bias current by the bandgap reference bias module, generates a PTAT voltage with a positive temperature change; the CTAT voltage generation module generates a CTAT voltage with a negative temperature change due to the negative temperature characteristic of a diode voltage V BE ; and the comparator is provided with bias by the bandgap reference bias module, adopts a two-stage structure, and outputs a result after shaping.

Provided herein is a bandgap reference circuit comprising: a proportional to absolute temperature (PTAT) voltage circuit configured to generate a PTAT voltage; and a bandgap voltage circuit comprising a diode, the bandgap voltage circuit configured to: receive the PTAT voltage from the PTAT voltage circuit; and combining the PTAT voltage with a diode voltage across the diode to output a bandgap reference voltage.

This invention belongs to the field of power electronic converter technology and discloses an automatic current-sharing high-gain boost converter and its application in photovoltaic charging devices. This automatic current-sharing high-gain boost converter employs two different voltage multiplier units, inserted at the midpoint of the bridge arm of a two-phase interleaved parallel circuit, and then cascaded with a half-wave rectifier circuit. This ensures that each inductor discharge circuit contains (m+n+1) diodes, thereby automatically achieving inductor current sharing. Furthermore, it achieves a voltage gain of 2(m+n+1) / (1-D) with a relatively small number of components, and features low switching transistor voltage stress, low diode voltage stress, low input current ripple, and common ground drive for all switching transistors. The boost requirements can be flexibly met by freely matching the number of switched capacitors n and m in the boost unit.

The invention provides a soft switching arc welding power supply topology with low-stress and anti-fatigue characteristics. The soft switching arc welding power supply topology comprises a direct-current voltage source, a voltage stabilizing circuit, a phase-shifted full-bridge circuit, a high-frequency transformer, a full-wave rectifying circuit, a high-speed chopper circuit and a resonance current complementary circuit which are connected in sequence, the phase-shifted full-bridge circuit comprises a leading bridge arm and a lagging bridge arm; the midpoint A of the leading bridge arm is connected with the midpoint B of the lagging bridge arm through a primary winding of the high-frequency transformer; the resonance current complementary circuit comprises an auxiliary transformer Ta, an inductor La and a non-polar capacitor Ca; the primary side of the auxiliary transformer Ta is connected to the midpoint A and one end of the inductor La, the secondary side of the auxiliary transformer Ta is connected to the midpoint B and one end of the inductor La, and the other end of the inductor La is connected with the negative electrode of the direct-current voltage source through the capacitor Ca. According to the power supply topology, zero-voltage switching commutation operation of all SiC MOSFET power devices in the whole load current range can be realized, and the duty ratio loss and the rectifier diode voltage spike are reduced.

The embodiment of the invention provides a switch, a battery protection circuit, a charging control method and circuit, and a charging system, the switch circuit comprises a first switch module, the first end of the first switch module is used for being connected with the first end of a to-be-controlled path, the second end is used for being connected with the second end of the to-be-controlled path, and the control end is used for receiving a first control signal; the first switch module is used for being switched off under the control of a first control signal, so that a forward conduction path of the to-be-controlled path is switched off, the reverse conduction voltage of the first switch module during switching off is smaller than a preset voltage, and the preset voltage is related to the body diode voltage of the standard silicon diode; and the reverse conduction is that the current direction of the to-be-controlled path is from the second end to the first end of the to-be-controlled path. According to the switching circuit provided by the embodiment of the invention, the charging time before startup can be shortened, the waiting time of a user is reduced, and the user experience is improved.

This application provides a short-circuit identification method for water pump frequency converters based on the IGBT body diode voltage drop slope, applied to the short-circuit protection system of a water pump frequency converter controller. The method includes: real-time capture of the collector-emitter forward voltage drop signal generated by the lower arm insulated gate bipolar transistor during the inductive load freewheeling phase; continuous discrete voltage sampling at a preset sampling frequency during the effective freewheeling period; obtaining the instantaneous voltage drop change rate between adjacent sampling points through digital differential logic; comparing the absolute value of the instantaneous voltage drop change rate with a preset critical slope threshold and a time window threshold to perform dual determination; and triggering a hardware logic blocking drive signal when a short-circuit fault is detected at the output terminal.

The invention relates to a method (100) for determining a capacitively smoothed rotor current of an inductive transmitter (1) of an externally excited electric machine in order to thereby preferably control the capacitively smoothed rotor current to drive a rotor (40) of the externally excited electric machine. The method comprises: determining a capacitor voltage (110) of a secondary intermediate circuit capacitor (22) of the inductive transmitter (1) by means of a primary current of the inductive transmitter (1), an equivalent circuit diagram of a transformer (30) of the inductive transmitter (1) and a diode voltage of a first diode (21.1) of a rectifier circuit (21) of the inductive transmitter (1); determining a transmission power (120) of the inductive transmitter (1) by means of the primary current and a primary voltage of the inductive transmitter (1); determining a rotor resistance (130) by means of the capacitor voltage, the transmission power and detected interference signals of the rotor (40); and determining the rotor current (140) by means of the capacitor voltage, the rotor resistance and the interference signals.

This invention belongs to the field of pressure measurement technology for large-cavity presses, and discloses a pressure calibration method for large-cavity presses based on diode constant current mode and a differential stress phase change pressure measurement method. The differential stress phase change pressure measurement method provided by this invention fixes two diodes to a second pressure-transmitting medium and the analyte, respectively. While performing an oil pressure test using a large-cavity press, a calibration current is applied to the two diodes. The voltage changes of the two diodes are compared to obtain a differential signal, and the abrupt change interval in the differential signal is identified. Based on the diode voltage signal used as a reference channel, combined with the "cavity pressure - diode voltage" standard curve, the cavity pressure range of the abrupt change interval is obtained. This invention eliminates the reliance on bulky sensing elements and additional structural characterization facilities, achieving simple, low-cost, in-situ, and continuous pressure monitoring during actual functional experiments, and also expands the range of measurement objects.

The invention discloses an input current estimation method and device for a four-switch Buck-Boost circuit, and the method comprises the following steps: obtaining a freewheel diode voltage drop, a conduction voltage drop and an inductance equivalent impedance of a power tube, and constructing an inductance current-equivalent impedance mapping table; performing high-speed sampling on the input voltage, the output voltage and the inductive current; judging the working modes of the circuit based on the transformation ratio coefficient of the input and output voltage, wherein the working modes comprise a Buck mode, a Boost mode and a critical state mode; in the Buck mode, the input current estimation formula is compensated based on the actual duty ratio, the fly-wheel diode voltage drop, the conduction voltage drop and the inductance impedance; and in the critical state region of the Buck and Boost modes, continuous compensation calculation is carried out on the input current according to a critical state inductive current model. According to the invention, the precision and stability of input current estimation in a CCM mode (continuous conduction mode) and a DCM mode (discontinuous conduction mode) are remarkably improved, and a reliable and low-cost input port monitoring scheme is provided for an industrial-grade four-switch Buck-Boost circuit.

The embodiment of the invention provides a trap characterization method and device for a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device based on a body diode, and the method comprises the steps: 1, connecting the SiC MOSFET device in a constant-temperature environment through test equipment; step 2, grid electrode filling voltage and drain electrode voltage are applied to the SiC MOSFET device through test equipment, and trap filling is carried out on the SiC MOSFET device; 3, applying a grid test voltage and a body diode test current in a trap release stage through test equipment, and measuring a transient response curve of the body diode voltage; 4, repeating the steps 1-3, and obtaining a plurality of transient voltage curves at different temperatures; and step 5, carrying out fitting processing on the plurality of transient voltage curves, extracting a time constant spectrum of a trap, and calculating a trap energy level by adopting an Arrhenius formula based on the time constant spectrum of the trap so as to carry out trap characterization.