13 results about "Transient voltage suppressor" patented technology

A thermal-protective transient voltage suppressor (TVS) includes a TVS assembly, a housing, a frame, a cover plate, and a pin, where the TVS assembly is provided in the frame; the TVS assembly is electrically connected to the pin; the housing and the cover plate form an accommodation chamber for accommodating the frame; the pin extends out of the accommodation chamber, and an extended part of the pin is provided with a mounting portion for surface mount soldering; a spacing limit post is provided on the cover plate; and the frame abuts against the spacing limit post, such that the mounting portion of the pin and the TVS assembly are spaced apart by a preset distance. The spacing limit post on the cover plate of the thermal-protective TVS limits the frame provided with the TVS assembly, thereby increasing a distance between the mounting portion of the pin and the TVS assembly.

This invention provides a bidirectional transient voltage suppressor with low dynamic resistance and high surge capability, comprising: a heavily doped semiconductor substrate of a first conductivity type; a first epitaxial layer disposed on the substrate; a conduction modulation buried layer disposed on the first epitaxial layer; a second epitaxial layer disposed on the conduction modulation buried layer; a heavily doped first conductivity type region disposed on the second epitaxial layer; a first electrode disposed on the front side of the heavily doped first conductivity type region and a second electrode disposed on the back side of the substrate; the conduction modulation buried layer is disposed inside the double epitaxial body region and is configured to form a high-concentration conductivity modulation region of charge carriers under transient high current impact conditions, forming a body region-dominated conduction path between the first epitaxial layer and the second epitaxial layer, so that the conduction current changes from concentrated conduction in the PN junction region to a laterally extended and planar distributed overall conduction mode within the body region, thereby reducing the dynamic resistance of the device and improving the surge carrying capacity of the device.

A single-drive gate cascaded high-voltage MOSFET module circuit includes: a MOSFET, a static voltage equalization resistor, a high-voltage capacitor, a high-voltage avalanche diode, a transient voltage suppressor (TVS) diode, a drive resistor, and a varistor (MOV). The present invention has a simple drive structure and also has excellent switching characteristics, superior dynamic and static voltage equalization effects, and low module loss.

This invention relates to the field of transient voltage suppressor diode (TVS) manufacturing technology and discloses a novel TVS mesa processing technology. This process aims to solve the problems of complex processes, high costs, significant safety and environmental risks, and poor product consistency caused by the reliance on photolithography and HF acid etching in existing technologies. This invention uses screen printing technology to directly and selectively coat glass paste onto a predetermined area of ​​the semiconductor substrate. After pre-drying and high-temperature sintering and curing, the patterning and passivation functions of the glass layer are realized simultaneously, eliminating key steps such as secondary coating, photolithography, HF etching, and resist removal in traditional processes. This process has advantages such as simplified process, low cost, safety and environmental protection, high forming accuracy, and stable product performance. It is suitable for the large-scale production of various TVS devices, especially for application scenarios with high requirements for production efficiency and reliability.

The application provides a lightning protection device, and belongs to the technical field of electrostatic discharge protection. A first high-voltage resistor and a first power diode are formed by a first N-type well region, two second N-type well regions, an N-type injection region, a P-type well region, a P-type injection region, a first oxide layer, two first metal regions, a second oxide layer, and a second metal region arranged on an epitaxial layer. The structure of a second power diode is the same as that of the first power diode. The lightning protection device is formed at the input end of the protected device through the structures of the first high-voltage resistor, the first power diode, and the second power diode. Through the device, a transient voltage suppressor is not needed, the area of the device is reduced, the integration and reliability are improved by the clamping characteristics of the first high-voltage resistor, the first power diode, and the second power diode, the problem that the transient voltage suppressor occupies a large area and is not conducive to integration is solved, and the demand for integration can be met.

Technologies are described for a light emitting diode (LED) driver configured for powering LED(s) and having a wide input voltage range between about 100V and about 528V, high power factor, low total harmonic distortion (THD), and low output current ripple load. The LED driver has a single stage buck-boost type converter with output current regulation, an output current regulation circuit, a ripple control circuit having a transient voltage suppressor (TVS) and a parallel resonant LC filter, a power factor correction (PFC) control circuit having a digital compensation block, a PFC controller, and a gate drive IC.

The invention provides a bidirectional transient voltage suppressor and a preparation method thereof, one embodiment comprises at least one electrically isolated functional region, a first electrode layer and a second electrode layer, the functional region comprises at least one first highly doped region of a second conductivity type extending from the surface of a substrate of a first conductivity type into the substrate, and at least one second highly doped region of a second conductivity type extending from the surface of the substrate of the first conductivity type into the substrate, the at least one first highly doped region is arranged at intervals; a second conductive type first semiconductor layer covering the substrate and the first highly doped region; the at least one second highly doped region of the second conductivity type extends into the first semiconductor layer from the surface, far away from the substrate, of the first semiconductor layer, and the at least one second highly doped region is arranged at intervals; and a second semiconductor layer of the first conductivity type covering the second semiconductor layer and the second highly doped region. The bidirectional transient voltage suppressor provided by the embodiment of the invention has the advantages of low voltage and low loop capacitance by a simple structure.

A circuit (100) for testing a DUT (104) (device under test) includes an inductor (112) coupled to a first switch (140), and the first switch (140) is coupled to a second switch (148). The circuit (100) includes a test module (108) coupled to the first switch (140) and the second switch (148). The test module (108) includes a DUT (104). The circuit (100) also includes a TVS (146) (transient voltage suppressor) coupled to the second switch (148).

The application relates to the field of energy storage power supplies, and discloses a protection device for the impact of an inverter surge on a BMS. In the application, the protection device comprises a battery B1, a BMS, an inverter Inverter and a surge device. The output end of the battery B1 is connected with the input end of the inverter Inverter, and the output end of the inverter Inverter is connected with an external load or circuit needing power supply; the surge device is connected in parallel in the input side circuit of the BMS as a protection element; the surge device is a transient voltage suppressor, can rapidly change the impedance from high to low when abnormal overvoltage occurs during the use of the inverter, thereby absorbing transient overcurrent, clamping the overvoltage at a safe level, and avoiding damage to electronic elements; when the circuit normally works, the surge device is in a cut-off state and does not affect the circuit operation; through the effective suppression and filtering effect on the transient voltage and current in the control circuit, the BMS of the battery can be effectively protected from the damage of the inverter surge impact, and the stable operation of the battery management system is ensured.

This invention discloses a fourth-order non-isolated voltage divider high-voltage direct-drive circuit for gallium nitride (GaN) power devices, comprising: a control chip, a voltage divider network, a trimming network, a clamping network, and GaN power devices. The core of the voltage divider network is a series resistor-capacitor (RC) circuit connected in series within the drive circuit. The clamping network consists of a Zener diode or transient voltage suppressor (TVPS) and a resistor connected in parallel within the drive circuit. The core of the gate voltage trimming network is a series RC circuit connected in parallel within the drive circuit, with a ferrite bead helping to suppress high-frequency oscillations. The voltage divider network and the gate voltage trimming network together form a fourth-order low-pass filter, which can complete current shunting at the moment of device startup, thereby effectively suppressing gate voltage overshoot. This circuit is fully compatible with existing silicon-based high-voltage PWM output solutions, solves the practical engineering problem of frequent transistor failures in continuous mode power factor correction circuits, effectively suppresses drive oscillations, is suitable for multi-transistor parallel schemes, and features a simple circuit structure, low cost, and strong versatility.

This utility model relates to the field of electronic communication technology, specifically to an external POF port lightning protection circuit and device. The lightning protection circuit includes: a first varistor MOV1, one end of which is connected to the positive terminal of the power input, and the other end connected to ground; and a second varistor MOV2, one end of which is connected to the positive terminal of the power input, and the other end connected to the negative terminal of the power input. This utility model provides an external POF port lightning protection circuit and device, achieving efficient lightning protection through the combination of the first varistor MOV1, the second varistor MOV2, the third varistor MOV3, and a transient voltage suppressor TVS1.

A surge protector for signal acquisition protection of wind turbine blades includes a metal cabinet, a grounding component, and multiple surge protection units deployed within the metal cabinet. Each surge protection unit is connected between the input and output interfaces of the metal cabinet and grounded through the grounding component. Each surge protection unit includes multiple transient voltage suppressor diodes (TVS), with one end of each TVS connected to the interconnecting line between the input and output interfaces and the other end grounded. Using the surge protector proposed in this invention, the wind turbine control system can be effectively protected from damage caused by induced overcurrent and induced overvoltage generated by lightning, ensuring the stable operation of the integrated wind turbine control system and greatly improving equipment efficiency and quality.