82results about How to "Avoid latch" patented technology

Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The structure comprises a damage layer formed in a substrate, a first doped well formed in the substrate, and a second doped well formed in the substrate proximate to the first doped well. The damage layer extends within the substrate to intersect the first and second doped wells. The damage layer may be formed by ion implantation followed by growth of an epitaxial layer to segregate the active device regions from the damage layer.

A method and structure for protection against latch-up is provided. Integrated circuits manufactured in accordance with the present disclosure feature well and substrate contacts of varying periodicity. Such a strategy enables maximizing the design of an integrated circuit as to the suppression of latch-up while concurrently optimizing available area on the chip allocable to circuit design. This method and structure is particularly beneficial to protect against cable discharge events and other discharge occurrences prone to injecting large current densities into an integrated circuit.

A differential delay cell is provided herein that not only receives a pair of differential input values, but also receives a pair of differential control values for delaying the differential input values to produce a pair of differential output values. As such, a delay cell is provided, which is truly differential, and therefore, capable of demonstrating a significant improvement in noise performance. The differential delay cell of the present invention also demonstrates high frequency stability around the center frequency, constant gain and increased tuning range capabilities. In this manner, the differential delay cell may be used in PLL or DLL designs as part of a low noise VCO or a low noise delay line, respectively.

A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and a high operation speed in a semiconductor device provided with a lateral IGBT, and that prevents malfunctions such as latchup when IGBTs or an IGBT and CMOS devices are integrated together. The structure includes an SOI substrate having a supporting substrate, an oxide film and a p⁻-semiconductor layer. An island-like element-forming region is isolated by a trench isolation region from surroundings. The trench isolation region includes an isolation trench with an insulation film on its inner wall. The device trench is formed in the element-forming region. A gate electrode is formed with a gate insulator film in the device trench. A collector region and an emitter region outside are provided respectively on the bottom and the outside of the device trench.

Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The structure comprises a first doped well formed in a substrate of semiconductor material, a second doped well formed in the substrate proximate to the first doped well, and a deep trench defined in the substrate. The deep trench includes sidewalls positioned between the first and second doped wells. A buried conductive region is defined in the semiconductor material bordering the base and the sidewalls of the deep trench. The buried conductive region intersects the first and second doped wells. The buried conductive region has a higher dopant concentration than the first and second doped wells. The buried conductive region may be formed by solid phase diffusion from a mobile dopant-containing material placed in the deep trench. After the buried conductive region is formed, the mobile dopant-containing material may optionally remain in the deep trench.

A latch up in a charge pump device is prevented as well as a withstand voltage of an MOS transistor used in the charge pump device is increased with this invention. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer separated from each other. A P-type isolation layer is formed between the P-type well regions. A P+-type buried layer is formed abutting on a bottom of each of the well regions, an N+-type buried layer is formed abutting on a bottom of the P+-type buried layer, and a transistor for charge transfer is formed in each of the P-type well regions.

An electrostatic discharge (ESD) protection apparatus for high-voltage products is provided. The ESD protection apparatus includes a resistor, a capacitor, a first transistor, n diodes, and a main transistor, wherein n is an integer greater than 0. The holding voltage of the provided ESD protection apparatus is adjusted by determining the n value. The adjusted holding voltage is higher than the system voltage under normal operation, so that latch-up issues are avoided.

Distributed switches to suppress transient electrical overstress-induced latch-up are provided. In certain configurations, an integrated circuit (IC) or semiconductor chip includes a transient electrical overstress detection circuit that activates a transient overstress detection signal in response to detecting a transient electrical overstress event between a pair of power rails. The IC further includes mixed-signal circuits and latch-up suppression switches distributed across the IC, and the latch-up suppression switches temporarily clamp the power rails to one another in response to activation of the transient overstress detection signal to inhibit latch-up of the mixed-signal circuits.

The invention discloses an insulate gate bipolar transistor (IGBT) with a current carrier storage layer and an additional hole passage, and belongs to the technical field of semiconductor power devices. In the IGBT, an N-type current carrier storage layer (5) and a large P<+> tagma (4) structure are introduced on the basis of a conventional planar non-pouch-through IGBT. The N-type current carrier storage layer (5) improves a conductivity modulation effect close to an emitter and the large P<+> tagma (4) structure plays a role in providing an additional passage for a hole so that the latch-up resistance is improved. Due to the design of the N-type current carrier storage layer (5) and the large P<+> tagma (4), the flow path of a hole current of the conventional IGBT is optimized, so that a safety operation area of a device is enlarged and the sensitivity of latch current density to a temperature is reduced.

A static discharge protection circuit comprises: a step-down module that is coupled between a first voltage level and a second voltage level, wherein the first voltage level is higher than the second voltage level; a grid trigger switch that is coupled between the first voltage level and the second voltage level; and a detection circuit that is coupled with the grid trigger switch and used for detecting static discharge events so as to control the grid trigger switch.

A semiconductor device is provided for preventing Latch-up in Silicon Controlled Rectifiers (SCRs) when these SCRs become activated. Embodiments of the invention use a natively doped region having high resistance to separate the NPN transistor from the PNP transistor that form the SCR, and/or to isolate the entire SCR from the injector source in order to prevent latch-up. The high resistance of the natively doped region allows to achieve the separation resistance needed in a smaller space, as compared to the space required to achieve the same separation resistance in a well. Accordingly, the invention provides for more robust and cost effective latch-up prevention devices.

In a charge pump device, occurrence of a latch up can be prevented and current capacity can be increased. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, P-type well regions are formed in the N-type epitaxial silicon layer separated from each other, and P-type lower isolation layers and P-type upper isolation layers are formed between the P-type well regions. Then a charge transfer MOS transistor is formed in each of the P-type well regions. The P-type single crystalline silicon substrate is biased to a ground potential or a negative potential.

The invention provides a secondary power source with a latch-up resistance function, which comprises an input filter, a DC/DC (Direct Current/Direct Current) transducer, a three terminal regulator, a low dropout linear regulator and a power-off delay secondary power-up function circuit. The external primary power supply voltage is sequentially filtered through the input filter and reduced and isolated through the DC/DC transducer, and then is transmitted to the three terminal regulator for primary voltage regulation filtering; the output of the three terminal regulator is transmitted to the low dropout linear regulator for secondary voltage regulation filtering; and the needed secondary voltage is generated by the low dropout linear regulator and then is output. The power-off delay secondary power-up function circuit utilizes a detection resistor, a resistance-voltage-dividing network and a power supply voltage monitoring chip to form a voltage monitoring circuit for the secondary power source; when the voltage is lower than a threshold value through detection, the low dropout linear regulator is closed automatically, the latch of a CMOS (Complementary Metal Oxide Semiconductor) device is released because of power-off, and the output voltage gets back to normal again after the secondary power-up is performed, so that the power-off delay secondary power-up function is achieved, and the latch of the CMOS device can be released reliably.

A semiconductor device includes a substrate of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a collector region of the second conductivity type, a trench gate, which is formed in a trench via a gate insulation film, an electrically conductive layer, which is formed within a contact trench that is formed through the source region, a source electrode, which is in contact with the electrically conductive layer and the source region, and a latch-up suppression region of the second conductivity type, which is formed within the base region, in contact with the electrically conductive layer, and higher in impurity concentration than the base region. The distance between the gate insulation film and the latch-up suppression region is not less than the maximum width of a depletion layer that is formed in the base layer by the trench gate.

A protector to shield a hood latch and hood latch cable from disablement by a tool thrust through the vehicle's grille.

The present disclosure provides a layout of a semiconductor integrated circuit device that can assure a lot of substrate contact regions, and can surely suppress latch-up without increasing an area of a whole semiconductor integrated circuit and without significantly decreasing a decoupling capacitance element. In a margin region, a transistor serving as a decoupling capacitance and a substrate contact are disposed as a pair on a P-type well. In the margin region, a transistor serving as a decoupling capacitance and a substrate contact are disposed as a pair on an N^-type well.

The invention relates to the field of electronic static discharge (ESD) protecting circuits of integrated circuit chips, and in particular relates to an instantaneously-triggered and adjustable maintaining voltage type ESD protecting circuit. The adjustable maintaining voltage type electronic static discharge protecting circuit comprises an instantaneous triggering module, a release device controlled silicon and a maintaining voltage regulating module; the maintaining voltage regulating module is connected with the controlled silicon and comprises a resistor R2, a capacitor C2, an inverter INV1, a PMOS (P-channel Metal Oxide Semiconductor) Mp1 and a PMOS MP2. With the adoption of the adjustable maintaining voltage type electronic static discharge protecting circuit, the maintaining voltage can be kept to be greatly less than the power supply voltage when then chip is in an idle state, and thus the electronic static charge can be fully released; when the chip is in a working state, the maintaining voltage is more than the power supply voltage to avoid the latch-up effect.

The invention relates to an RC-IGBT chip. The RC-IGBT chip comprises an IGBT region and an FRD region; the IGBT region and the FRD region each comprise a P type base region and a contact region; the thickness and doping concentration of the P type base region in the IGBT region are larger than those of the P type base region in the FRD region, so that the reverse recovery characteristic of the RC-IGBT chip is improved. Meanwhile, the doping concentration of the contact region in the IGBT region is greater than the doping concentration of the contact region in the FRD region, and therefore, thereduction of the reverse recovery current and reverse recovery loss of a diode can be facilitated, and the robustness of the device can be improved. The invention also relates to a manufacturing method of the RC-IGBT chip.