102 results about "High voltage transistors" patented technology

Integrated circuitry comprising high voltage (HV) and low voltage (LV) ribbon or wire (RoW) transistor stack structures. In some examples, a gate electrode of the HV and LV transistor stack structures may include the same work function metal. A metal oxide may be deposited around one or more channels of the HV transistor stack, thereby altering the dipole properties of the gate insulator stack from those of the LV transistor stack structure.

The present disclosure describes a method for the formation of n-type and p-type epitaxial source / drain structures with substantially co-planar top surfaces and different depths across input / output (I / O) and non-I / O regions of a substrate. In some embodiments, the method includes forming fin structures and a planar portion on a substrate. The method also includes forming first gate structures on the fin structures and second gate structures on the planar portion. The method also includes etching the fin structures between the first gate structures to form first openings and etching the planar portion between the second gate structures to form second openings. Further, the method includes forming first epitaxial structures in the first openings and second epitaxial structures in the second openings, where top surfaces of the first and second epitaxial structures are substantially co-planar and bottom surfaces of the first and second epitaxial structures are not co-planar.

A method of manufacturing a semiconductor device, including: forming a dielectric layer configured to be a gate oxide contacting the second well on the substrate, wherein the dielectric layer is single-layered dielectric layer and includes a contact via penetrating through the dielectric layer; and forming a patterned conductive layer contacting the dielectric layer, wherein the patterned conductive layer includes a first conductive portion isolated from the second well and configured to be a gate electrode, and a second conductive portion coupled to the first well via the contact via; wherein the first conductive portion is leveled with the second conductive portion, and the first conductive portion and the second conductive portion are formed entirely on a topmost surface of the dielectric layer; wherein the dielectric layer and the first conductive portion collectively serve as a gate of the transistor, and the transistor is configured as a high-voltage transistor.

The application discloses a micro-power-consumption fast-response low-voltage-difference linear voltage stabilizer with mode control function, which comprises a dual-mode controller, a SET end of an external partial voltage resistor is connected to a negative phase input end of the dual-mode controller, a positive phase end of the dual-mode controller is connected to GND, an output end of the dual-mode controller is connected to a positive phase input end of a controller of an error amplifier, and the dual-mode controller is used for adjusting the stabilizer to be in a fixed output voltage mode or an adjustable output voltage mode; a negative phase input end of the error amplifier is connected to a reference voltage V REF , an output end is connected to an input end of a driving circuit with voltage clamping function; an output end of the driving circuit with voltage clamping function is connected to a gate of an M p1 high-voltage PMOS transistor, a substrate and a source are connected to an input voltage V IN , and a drain is connected to an output end OUT of the stabilizer; when the linear voltage stabilizer is applied, the type of capacitor and the equivalent resistance of capacitor series connection do not need to be considered, and the needs of micro-power-consumption electronic system power supply and battery power supply system can be met.

A deep trench structure may be formed to include a doped polysilicon core and dielectric isolation layers on the sidewalls of the doped polysilicon core. The deep trench structure may be provided as a deep trench isolation structure that laterally surrounds transistors in a semiconductor device. Additionally and / or alternatively, the deep trench structure may be included in a high-voltage transistor as a vertical drain region that extends into a semiconductor layer of a semiconductor device.

A vehicle propulsion system including a battery for supplying a direct current (DC), an inverter including a wide band gap transistor for converting the DC to an alternating current (AC) in response to a transistor control signal applied to a gate of the wide band gap transistor, a high voltage power switch coupled in anti-parallel with the wide band gap transistor to provide a path for the current when the wide band gap transistor is turned off, an inverter controller including a power supply for supplying a DC current, a current sensor for detecting a current level of the DC current, and a high voltage transistor for generating the transistor control signal in response to a variation of the current level and the DC current, and an electric motor configured to generate an electromotive torque in response to the AC voltage to propel a vehicle.

Embodiments of the present application provide a three-dimensional memory. The three-dimensional memory includes a peripheral circuit chip and a memory array chip, the peripheral circuit chip includes: a first substrate; a first circuit element layer disposed on the first substrate and including a first device layer, the first device layer including a plurality of high-voltage transistors; a second substrate disposed on the first circuit element layer and in contact with the first circuit element layer; and a second circuit element layer disposed on the second substrate and including a second device layer, the second device layer including a plurality of low-voltage transistors; the memory array chip is disposed on the second circuit element layer.

The present application discloses a driving circuit, which includes a medium-voltage logic circuit and two voltage level converters, saving high-voltage transistor area and power consumption compared with traditional driving circuits, and minimizing the number of voltage level converters to control the output signal of the output stage circuit to be in one of four states.

A low-loss active high voltage power switch is provided. A vehicle propulsion system includes: a battery for supplying direct current (DC); an inverter including a wide bandgap transistor for converting DC into an alternating current (AC) in response to a transistor control signal applied to a gate of the wide bandgap transistor; the high-voltage power switch is coupled with the wide-band-gap transistor in an anti-parallel manner so as to provide a path for the current when the wide-band-gap transistor is turned off; an inverter controller including a power source for supplying the DC current, a current sensor for detecting a current level of the DC current, and a high voltage transistor for generating a transistor control signal in response to a change in the current level and the DC current; and a motor configured to generate an electromotive force torque to propel the vehicle in response to the AC voltage.

An electronic device includes a circuit module and a protection module. The circuit module includes a P-N junction between a reference terminal and an electrical node, and metal connection lines coupled to the electrical node and configured to be charged due to antenna effect. The protection module includes an HV transistor and a capacitor. The capacitor is connected between the electrical node and the HV transistor and configured to turn on the HV transistor when the electrical node charges positively due to the antenna effect. The circuit module is thus maintained at a potential that does not damage the electronic device.

A high-voltage transistor may include a composite gate dielectric layer having multiple regions with different dielectric constant values and / or a composite gate structure having multiple regions of different work function values. The composite dielectric layer having multiple regions with different dielectric constant values and / or the composite gate structure having multiple regions with different work functions increases the threshold voltage uniformity across a channel region of the high-voltage transistor. The increased threshold voltage uniformity may enable a low subthreshold swing and a low subthreshold off-stage current leakage to be achieved for the high-voltage transistor, which increases the operating efficiency of the high-voltage transistor and enables the size of the high-voltage transistor to be reduced without increasing (or with minimal increase to) the subthreshold swing and and / or the subthreshold off-stage current leakage of the high-voltage transistor.

The application provides a manufacturing method of a semiconductor device, before an active region manufacturing process, a substrate region to be manufactured into a high-voltage transistor is subjected to groove etching to form at least a gate oxide groove and a first depth adjusting groove and define an active region horn, the depth of the first depth adjusting groove is used to increase the bottom depth of a shallow trench isolation structure for isolating a source / drain region and a channel region of the high-voltage transistor, the breakdown voltage of the high-voltage transistor is increased, and by ion implantation and oxidation on the active region horn, a relatively thick first gate oxide layer is formed, the problem of the thin gate oxide layer of the high-voltage transistor at the top corner of the active region is solved, the leakage at the top corner of the active region is reduced, the hot carrier effect and the gate-induced drain leakage are reduced, and the first gate oxide layer can also be used as a barrier layer to block the lateral diffusion of oxygen in the process of forming a second gate oxide layer, thereby improving the beak effect on the source / drain region of the high-voltage transistor.

Provided is a non-volatile memory device including a page buffer circuit having a multi-stage structure, wherein a stage of the multi-stage structure includes a high voltage region, a first low voltage region, and a second low voltage region. The high voltage region includes a first high voltage transistor connected to one of first to sixth bit lines and a second high voltage transistor connected to one of seventh to twelfth bit lines, the first low voltage region includes a first transistor connected to the first high voltage transistor, and the second low voltage region includes a second transistor connected to the second high voltage transistor. Each of the first low voltage region and the second low voltage regions has a first width corresponding to a pitch of six bit lines, and the high voltage region has a second width corresponding to a pitch of twelve bit lines.

In a described example, an apparatus includes a transistor formed on a semiconductor substrate, the transistor including: a transistor gate and an extended drain between the transistor gate and a transistor drain contact; a transistor source contact coupled to a source contact probe pad; a first dielectric layer covering the semiconductor substrate and the transistor gate; a source field plate on the first dielectric layer and coupled to a source field plate probe pad spaced from and electrically isolated from the source contact probe pad; and the source field plate capacitively coupled through the first dielectric layer to a first portion of the extended drain.

A high-voltage transistor may include a planar active region for a first source / drain active region, a second source / drain active region, and / or a channel active region. The planar active region(s) are included instead of a plurality of fin active regions to reduce the amount of surface area of the active regions in the high-voltage transistor that is in contact with surrounding dielectric layers of the high-voltage transistor. In other words, the planar active region(s) reduce the interface surface area between the silicon-based active regions of the high-voltage transistor and the surrounding oxide-based dielectric layers. The reduced interface surface area may reduce the occurrence of charge trapping in the high-voltage transistor, which may result in increased performance stability for the high-voltage transistor and / or may provide increased operational lifetime of the high-voltage transistor.

An improved structure of a lateral n-channel LDMOS transistor is provided to avoid gate-oxide breakdown that occurs during transistor operation. The LDMOS transistor includes a dielectric isolation structure that physically isolates a region including a parasitic NPN transistor from a region that generates a hole current due to weak impact ionization (i.e., the extended drain region of the LDMOS transistor). According to an embodiment of the present disclosure, this can be achieved using a vertical trench between the two regions. Further embodiments are also proposed to reduce the gain of the parasitic NPN transistor and reduce the back-gate resistance in order to further improve the robustness of the LDMOS transistor.

A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field strength near the drain region of the high voltage transistor. In particular, a portion of the stepped dielectric layer near the drain region includes a thickness that is greater relative to a thickness of another portion of the stepped dielectric layer near the gate structure. The increased thickness near the drain region provides increased electric field suppression near the drain region (which operates at high voltages). In this way, the stepped dielectric layer enables the high voltage transistor described herein to achieve higher breakdown voltages without increasing the distance between the gate structure and the drain region of a high voltage transistor.

A reference current generating circuit including a reference voltage generating circuit and a current source circuit is provided. The reference voltage generating circuit generates a first reference voltage according to a first current. The reference voltage generating circuit includes a native transistor device, and the first current flows through the native transistor device. The current source circuit is coupled to the reference voltage generating circuit. The current source circuit generates a reference current according to the first reference voltage. The current source circuit includes a cascode transistor circuit, and the reference current flows through the cascode transistor circuit. The cascode transistor circuit includes a low-voltage transistor device and a high-voltage transistor device coupled in series.

A control circuit for preventing hot plugging during high-voltage lithium battery charging, comprising a charge pump module for converting the power supply voltage VDD into a high-voltage power supply V1, a clamping module for limiting the high-voltage power supply V1 to a fixed voltage. The clamping module includes a first clamping unit and a second clamping unit connected in series between the high-voltage power supply V1 and the ground terminal in sequence, a control switch MLC1, a high-voltage transistor MHV1, an LDO module for converting the power supply V2 voltage into the normal charging voltage VBAT of the battery, and a battery full detection circuit for detecting the charging state of the battery. When the battery is in the charging state, the high-voltage transistor MHV1 is turned on, and V2 = VIN; when the battery is in the full state, the battery full detection circuit outputs a high-level signal to the control switch MLC1, the control switch MLC1 is turned on, and the control switch MLC1 shorts the second clamping unit to reduce the voltage of the high-voltage power supply V1 to protect the LDO module.

The invention provides a test circuit for dynamic switching characteristics of a high-voltage power assembly and a test method thereof. The test method comprises the following steps: measuring a test voltage of a test endpoint between the first high-voltage transistor and the second high-voltage transistor; when the high-voltage power assembly is in a conducting state, in a first period, the first high-voltage transistor is driven to be conducted through a first signal, and the second high-voltage transistor is driven to be cut off through a second signal, so that the test voltage is equal to the to-be-tested voltage of the high-voltage power assembly. When the high-voltage power assembly is in a cut-off state, the first high-voltage transistor is driven to be cut off through the first signal, and the second high-voltage transistor is driven to be conducted through the second signal, so that the test voltage is clamped. The first signal and the second signal drive the first high-voltage transistor and the second high-voltage transistor not to be in a conducting state at the same time.

A method includes: etching a trench on a surface of a substrate; filling the trench with a dielectric material to form a first isolation region; depositing a patterned mask layer on the substrate, the patterned mask layer comprising an opening exposing the substrate; implanting oxygen into the substrate through the opening to form an implant region; generating a second isolation region from the implant region; and forming a transistor on the substrate. The transistor includes a channel laterally surrounding the second isolation region.

The present disclosure describes a method for the formation of n-type and p-type epitaxial source / drain structures with substantially co-planar top surfaces and different depths across input / output (I / O) and non-I / O regions of a substrate. In some embodiments, the method includes forming fin structures and a planar portion on a substrate. The method also includes forming first gate structures on the fin structures and second gate structures on the planar portion. The method also includes etching the fin structures between the first gate structures to form first openings and etching the planar portion between the second gate structures to form second openings. Further, the method includes forming first epitaxial structures in the first openings and second epitaxial structures in the second openings, where top surfaces of the first and second epitaxial structures are substantially co-planar and bottom surfaces of the first and second epitaxial structures are not co-planar.

To provide an operational amplifier that can be used in high-voltage applications.SOLUTION: A first high breakdown voltage transistor Mhv1 has a source connected to a drain of a first transistor M1 and to a gate thereof, a first bias voltage Vbn2 is applied. A second high breakdown voltage transistor Mhv2 has a source connected to a drain of a second transistor M2 and to a gate thereof, the first bias voltage Vbn2 is applied. A bias voltage source 260 generates a bias voltage Vbn2 that changes in conjunction with an input voltage VIN.SELECTED DRAWING: Figure 4

A method of manufacturing a semiconductor device. According to some embodiments, the method includes forming a substrate of a first conductivity type having a doped layer fabricated therein that can be used as a bottom layer of a barrel-like structure in the semiconductor device. The bottom layer has a second conductivity type opposite the first conductivity type, and a peak doping concentration plane of the bottom layer has a predetermined bottom layer embedding depth from a top surface of an initial substrate layer of the substrate, the predetermined embedding depth being substantially greater than 0.5 [mu] m. The method may further include forming a plurality of sidewalls of the barrel-like structure. The method may further include forming the high voltage transistor of the barrel-like structure.

This invention provides a method for manufacturing a semiconductor device. Before the active region manufacturing process, trench etching is performed on the substrate region to be fabricated as a high-voltage transistor to form at least spaced-apart gate oxide trenches and a first depth adjustment trench. This increases the bottom depth of the shallow trench isolation structure used to isolate the source / drain region and the channel region of the high-voltage transistor by utilizing the depth of the first depth adjustment trench, thereby increasing the charge path of the high-voltage transistor, increasing its breakdown voltage, and improving the performance of the high-voltage transistor. Furthermore, the active region convex angle between the gate oxide trench and the shallow trench outside it thickens the edge of the thick gate oxide layer, which helps to reduce leakage current at the apex of the active region of the thick gate oxide layer, solving the problem of the thick gate oxide layer being thin at the apex of the active region. This reduces the hot carrier effect and gate-induced drain leakage current, further improving the voltage withstand capability of the high-voltage transistor in the semiconductor device of this invention.

Field plate structures for gallium nitride (GaN) high voltage transistors are disclosed. In one aspect, a transistor includes a GaN substrate, a source region formed on the GaN substrate, a drain region formed on the GaN substrate and separated from the source region, a gate region formed between the source region and the drain region, a pedestal formed on the GaN substrate and positioned between the gate region and the drain region, and a field plate electrically coupled to the source region, wherein the field plate extends from a proximal region positioned between the source region and the pedestal toward the drain region, wherein at least a portion of the field plate overlaps at least a portion of the pedestal.

Transistor, comprising: a first set of fins (175A, 190A) fixed over a substrate (110); a second set of fins (175B, 190B) fixed above the substrate (110); a gate structure (131) embedded in the substrate (110) between the first set of fins (175A, 190A) and the second set of fins (175B, 190B), wherein the first set of fins (175A, 190A) and the second set of fins (175B, 190B) are doped with a first dopant type and the substrate (110) is doped with a second dopant type that is different from the first dopant type; a first well disposed in the substrate (110) below the first set of fins (175A, 190A); and a second well disposed in the substrate (110) below the second set of fins (175B, 190B), wherein the first well and the second well are doped with the first dopant type.

This invention discloses a high-voltage transistor device and its fabrication method. The high-voltage transistor device includes: a semiconductor substrate, an isolation structure, a gate dielectric layer, a gate, a source region, and a drain region. The semiconductor substrate has multiple trenches extending downward from the substrate surface to form a serrated cross-sectional profile. The isolation structure is located outside the multiple trenches and extends downward from the surface into the semiconductor substrate to define a high-voltage region. The gate dielectric layer is located above the high-voltage region and partially fills the multiple trenches. The gate is located above the gate dielectric layer. The source and drain regions are located within the semiconductor substrate and are isolated from each other.

This invention provides a method for manufacturing a semiconductor device. Before the active region manufacturing process, trench etching is performed on the substrate region to be fabricated as a high-voltage transistor to form at least a gate oxide trench and a first depth adjustment trench. This allows the depth of the first depth adjustment trench to be used to increase the bottom depth of the shallow trench isolation structure in the high-voltage transistor, thereby increasing the charge path of the high-voltage transistor, increasing its breakdown voltage, and reducing the step height between the high-voltage transistor and other components compared to existing technologies. This reduces the load effect and defects in subsequent processes, improving the performance of the high-voltage transistor. Furthermore, after forming the side trench and before forming the thick gate oxide layer, the surface of the active region's exposed corners is oxidized to form a corner oxide layer. This allows for more favorable growth of the oxide layers on each crystal plane of the active region at the gate oxide trench during the growth of the thick gate oxide layer, solving the problem of the thick gate oxide layer being thin at the active region's corners.