208 results about "Guard ring" patented technology

A semiconductor device has a superjunction layer and guard ring regions in a termination portion of a semiconductor substrate. The guard ring regions have a first guard ring region including at least an outermost guard ring region, and a second guard ring region located on an inner side of the first guard ring region. The first guard ring region is spaced apart from second conductivity type columns of the superjunction layer. The second guard ring region is in contact with the second conductivity type columns of the superjunction layer.

In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

The invention relates to the technical field of unmanned aerial vehicles, and particularly discloses an unmanned aerial vehicle capable of landing and buffering, which comprises a fuselage shell, connecting arms are fixedly connected to the opposite angles of the side surfaces of the fuselage shell, and fan blade protection rings are fixedly connected to the ends, away from the fuselage shell, of the connecting arms. A driving motor is fixedly connected to the inner wall of the fan blade protection ring through a support, a driving shaft of the driving motor is fixedly connected with flying fan blades, a mounting frame is fixedly connected to the bottom of the fuselage shell, a damping device is fixedly connected to the bottom of the inner wall of the mounting frame, and a buffering mechanism is fixedly connected to the end, away from the supporting frame, of a fixing rod. According to the unmanned aerial vehicle capable of landing and buffering, the buffering mechanism is arranged, so that the impact force generated when the unmanned aerial vehicle descends can be buffered, and the damping device is arranged, so that the buffered vehicle body can be further damped; damage of parts in the unmanned aerial vehicle caused by violent vibration during descending is avoided.

In an embodiment, a device may include a first structure comprising a first surface and a second surface opposite the first surface. The first structure may include a first substrate and a first through substrate via (TSV) exposed from the second surface of the first substrate. The first TSV may have a first width. The device may also include a second TSV exposed from the second surface of the first structure, where the second TSV has a second width smaller than the first width. The device may further include a guard ring surrounding each of the first and second TSVs. Additionally, the device may include a second structure bonded to the first surface of the first structure, where the first surface has first bond pads.

The invention discloses a method for testing compression creep performance of a metal material under a constant-temperature condition, relates to the technical field of high-temperature performance testing of metal materials, and aims to solve the problem of inaccurate creep measurement at a constant temperature. According to the invention, a full-process compression creep performance test method of constant temperature control, loading compensation and strain correction is constructed, the test accuracy and the result consistency of the metal material in a constant temperature environment are improved, closed-loop control is realized through actual measurement temperature, time delay prediction and retaining ring heating are introduced, the constant temperature stability is ensured, and the test accuracy is improved. A micro-stepping compensation mechanism is adopted to maintain constant pressure stress, a loading state is automatically recovered after interruption, then system deformation is deducted through main and auxiliary link cooperation and a compliance template, strain measurement precision is ensured, distortion caused by boundary friction is overcome in combination with end face stick-slip detection and equivalent strain correction, and the accuracy of strain measurement is improved. Finally, automatic output of performance parameters is achieved through steady-state segment extraction and anomaly recognition, and the effectiveness, reproducibility and engineering applicability of test data are guaranteed.

The invention discloses a numerical control gear shaper for machining a high-precision hardened-tooth-face gear, and belongs to the technical field of numerical control machine tools. Through the combination of the ball screw, the linear guide rail and the penetrating transverse shaft, micron-order positioning and stable linear motion of the tool sliding table in the horizontal direction are achieved, the machine is compatible with gears of various sizes, the idle stroke is reduced, and the machining efficiency and the machine tool universality are improved; a quick-change clamping jaw, a transverse pull rod, a triangular cutting edge impact seat and a movable chip retaining ring are of an integrated structure, the cutting edge of the impact seat is always aligned with the edge of a gear, the movable chip retaining ring synchronously forms a closed protective cover, scrap iron is prevented from splashing, edge machining is faster, more stable and cleaner, and after a large gear bracket-annular tooth groove die hole is replaced, a large-size tooth groove can be formed at a time; and the thin-wall disc gear can be accurately positioned by the central positioning column, so that deformation is prevented. The whole machine has multiple purposes, and the universality and the flexibility are greatly improved.

The invention provides a picoampere-level current measuring device and method with leakage estimation and digital compensation, and the device comprises an electrometer-level operational amplifier and a transimpedance feedback network which are used for converting a measured current into a voltage signal; in combination with a retaining ring conductor driven by a retaining ring buffer and an inner and outer double-layer metal shielding structure, high-resistance node leakage and external interference are remarkably reduced. The digital controller injects 5mV-50mV micro excitation into the retaining ring in a non-sampling window and detects output response so as to estimate input equivalent leakage conductance and perform online compensation; and meanwhile, environment self-adaptive correction is carried out according to a temperature and humidity-leakage admittance model. The system adopts a 24-bit analog-to-digital converter, two-stage zero-drift amplification and multi-point linearity calibration can be switched, picoampere-level current measurement with high precision, low noise and wide dynamic range is realized, and the system is suitable for the fields of high-insulation detection, light current measurement, electrochemical micro-current analysis and the like.

Embodiments of the present application provide a detector device including a photon detector and a multilayer reflector. The photon detector includes a substrate, an isolation structure in a first side of the substrate, a guard ring adjacent to the isolation structure and in the first side of the substrate, a sensor node in the first side of the substrate, the guard ring between the sensor node and the isolation structure, a shared node in the first side of the substrate, the shared node between the guard ring and the isolation structure, an isolation extension structure in a second side of the substrate opposite the first side, the isolation extension structure extending from the second side to the isolation structure. The multilayer reflector is on the first side of the substrate. Using the multilayer reflector can improve collection of photons in an avalanche region.

The invention provides a protection ring resistor detection circuit, a protection ring resistor detection method and a memory. The protection ring resistor detection circuit comprises a plurality of reference resistors, and the resistance values of the reference resistors are different; the first power supply is connected with the first end of the protection ring and the first ends of the plurality of reference resistors and is used for inputting first input voltage to the protection ring and the plurality of reference resistors; the current adjusting module is connected with the second end of the protection ring and the second ends of the plurality of reference resistors, and is configured to enable the current flowing through the protection ring and the plurality of reference resistors to have the same current value; and the resistance detection module is configured to obtain a first voltage value of the second end of the protection ring and a second voltage value of the second end of each reference resistor, and compare the first voltage value with each second voltage value to obtain a resistance value of the protection ring. The protection ring resistance detection circuit can accurately detect the resistance of the protection ring so as to accurately judge whether the protection ring fails or not.

The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.

This invention provides a semiconductor device, its fabrication method, and its application. By setting a multi-layered ring structure outside the X-ray sensitive region, including a P-type charge collection ring, multiple P-type guard rings, and multiple N-type guard rings, the influence of leakage current and external electric fields outside the X-ray sensitive region is effectively shielded, thereby significantly improving signal quality and the stability of the semiconductor device. Furthermore, this structural design effectively suppresses plasma effects, further enhancing the sensitivity and signal-to-noise ratio of the semiconductor device. These performance improvements are crucial for the stable operation of the semiconductor device under high operating voltage environments. The semiconductor device of this invention can achieve a breakdown voltage of at least 600V and an operating voltage of at least 300V under irradiation, fully meeting the requirements of specific applications such as XFELs.

A contact structure according to the present disclosure includes a device layer over a substrate, a dielectric structure over the device layer, a first etch stop layer (ESL) over the dielectric structure, a through-via extending through the dielectric structure and the device layer and including a top of a through-via over the first ESL, a semiconductor device includes a first ESL disposed over a through hole, a guard ring structure disposed over the first ESL and around a top of the through hole, a protective layer disposed over the guard ring structure, a second ESL disposed conformally over a top surface of the first ESL, sidewalls of the guard ring structure, sidewalls of the protective layer, and a top surface of the protective layer, and a dielectric layer of the second ESL. The embodiment of the invention further discloses a method for manufacturing the contact structure.

An ESD guard ring structure includes numerous first fin structures, numerous second fin structures, numerous first polysilicon conductive lines, numerous second polysilicon conductive lines, numerous third polysilicon conductive lines and numerous single diffusion breaks. Each of the first fin structures includes at least one single diffusion break therein. Each of the single diffusion breaks overlaps one of the third polysilicon conductive lines.

The invention discloses a preparation method of a silicon micro-strip detector and the silicon micro-strip detector, relates to the technical field of semiconductor devices, and aims to solve the problem of poor micro-strip energy resolution of the silicon micro-strip detector in the prior art. The method comprises the following steps: providing a silicon substrate; sequentially depositing a first doping layer, a passivation layer and an electrode layer on the first surface of the silicon substrate; preprocessing the first doping layer, the passivation layer and the electrode layer to form a plurality of micro-strip units and a plurality of protection ring units on the silicon substrate; wherein the plurality of protection ring units are positioned on the outer sides of the plurality of micro-strip units; preprocessing the silicon substrate between the plurality of adjacent micro-strip units to form a plurality of trench isolation units in the silicon substrate and obtain a silicon micro-strip detector; on the basis, crosstalk between the micro-strip units is reduced by utilizing the groove isolation units, and the micro-strip energy resolution of the silicon micro-strip detector is improved.

A near infrared sensitivity enhanced non-isolated substrate silicon-based single photon avalanche diode is disclosed, comprising a p-well layer (101), a high voltage n-well (102), the p-well layer and the high voltage n-well layer positioned against each other and configured to form a main junction (100) defining an active region (104), the p-well layer comprising a doping according to a doping concentration profile, the p-well layer is configured to have a first double peak in a doping concentration profile of the p-well layer throughout the active region, the first double peak corresponding to a respective p-type doped region, and the high voltage n-well is configured to have a second double peak corresponding to a respective n-type doped region, the second double peak corresponding to a respective p-type doped region, and the second double peak corresponding to a respective n-type doped region. The n-doped region is configured to achieve an n-p-n-p type device junction distribution, whereby further, the p-well layer is lightly doped and configured to obtain a wide depletion region, i.e., at least 1 [mu] m wide, and the high voltage n-well layer is further configured to extend beyond the p-well layer to form a guard ring (103) around the active region.

The invention provides a gas turbine retaining ring surface NiCoCrAlY coating stripping method, and relates to the field of aero-engine and ship gas turbine component manufacturing, the gas turbine retaining ring surface NiCoCrAlY coating stripping method comprises the following steps: 1, alumina sand is adopted, and a NiCoCrAlY coating area on the surface of a to-be-repaired part matrix is subjected to sand blowing; secondly, the part obtained after sand blasting is put into a hydrochloric acid solution at the room temperature to be subjected to acid pickling, the surface of the part is observed every 20-30 min, and when no gas is generated, the part is immediately taken out and cleaned with cold running water; thirdly, the cleaned part is neutralized in a sodium carbonate solution for at least 0.5 min, and the neutralized part is cleaned with cold running water; and fourthly, clean compressed air is used for blow-drying the surfaces of the parts. According to the method, the NiCoCrAlY coating can be thoroughly removed, no damage is caused to a base body, operation is easy, cost is low, and the method is suitable for fault inspection repair and overhaul engineering of aero-engines and turbine parts of gas turbines.

The utility model relates to the technical field of guard ring assembly, and discloses a guard ring assembly tool which comprises a shell, the inner wall of the shell is connected with an expanding assembly through bolts, the bottom of the shell is provided with a bottom plate through screws, the top of the shell is connected with a top plate through screws, the top face of the top plate is provided with a chute in a penetrating mode, and the top plate is provided with a clamping groove. A first air cylinder is installed on the lower surface of the top plate, and the output end of the first air cylinder is connected with a push plate. According to the utility model, the protective ring can be conveniently sleeved, the four opening rods draw close in a normal state, the protective ring can be easily sleeved on the outer surface of the protective ring, and after the second air cylinder is started, the rack drives the gear, the rotating rod, the four-corner plate and the like to be linked, so that the sliding block slides along the guide rail and the opening rods synchronously move outwards along the direction of the chute, and the protective ring is opened; the whole opening process is easy to operate, and opening preparation work of the protective ring can be rapidly completed.

The utility model belongs to the technical field of total stations, and particularly relates to a demisting device for an objective lens of a total station. Comprising a total station body, a demisting assembly is detachably connected to a sighting part of the total station body, the demisting assembly comprises a shell, an annular sleeve located on the front side of an objective lens of the total station body is arranged below the shell, the side wall of the annular sleeve is attached to a protective ring of the objective lens, and the interior of the annular sleeve is of a hollow structure; the annular sleeve is connected and communicated with the shell through a connecting channel, a heating net is installed in the shell, a blowing fan for blowing heat generated by the heating net to the annular sleeve is installed above the heating net, a plurality of inclined air guide holes are formed in the inner wall of the annular sleeve, and the air outlet ends of the air guide holes face the objective lens. According to the utility model, the objective lens can be continuously demisted, meanwhile, the total station body can be conveniently measured, the measurement interruption is avoided, and the measurement precision and continuity are ensured.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming first fins in a first region of the semiconductor device, second fins in a second region of the semiconductor device, third fins in a third region of the semiconductor device, the second region encircling the first region, the third region encircling the second region. The method further includes forming first gate stacks over the first fins, second gate stacks over the second fins, and third gate stacks over the third fins, forming a mask layer covering the first region and the second region, performing an etching process to remove at least a portion of the third gate stacks, depositing a metal-containing material to replace the removed portion of the third gate stacks, and performing a planarization process to expose the first and second gate stacks.

The present invention provides a super-junction power MOSFET structure with optimized linear output and a preparation method thereof, which are used to solve the technical problem that the output signal of the traditional SJMOS device structure is distorted or generates unnecessary harmonics, resulting in the inability of the power management system to output stably. The present invention provides multiple pillar regions within the silicon drift region, and is provided with a guard ring and a surface guard ring on the outside thereof; the width and doping concentration of the pillar regions and the guard rings are both distributed in a gradient decreasing from top to bottom; the upper surfaces of the multiple pillar regions are sequentially provided with a shield region and a base region from bottom to top, and the shield region is wider than the base region; JFET regions are provided on both sides of the shield region and the base region, and the doping concentration of the shield region and the JFET region is distributed in an inverse gradient, and the corresponding depth of the doping peak concentration is located at the bottom of the base region; the doping concentration of the shield region is higher than that of the base region, and the doping concentration of the JFET region is higher than that of the silicon drift region; the base region is provided with a source region and a source electrode contact region, and the source electrode is conductively connected to the source electrode contact region.

The application discloses a forming method for a super-large integral rotor guard ring forge piece, and technical solution points comprise the following steps: step S1, blanking, manufacturing a blank; step S2, modifying forging, the blank is elongated, blank feeding amount W1=0.3-0.6W, and the downward pressing amount H1=0.1-0.2H, then the blank is turned over by 180 degrees to repeat the elongation process, then the blank is turned over by 90 degrees to repeat the elongation process, one elongation cycle is completed, and the elongation cycle is repeated until the target size; step S3, upsetting, vertical blank upsetting, upsetting deformation amount is greater than or equal to 40%; step S4, blank punching; step S5, blank horse frame hole expansion; step S6, blank ring rolling; step S7, blank solid solution: the blank is heated to 960-980 DEG C, then air-cooled to 900-910 DEG C, and finally water-cooled to room temperature; and step S8, aging treatment: the blank is heated to 700 DEG C-720 DEG C, and then air-cooled after furnace discharge, and the method has the advantages that the uniformity of the structure is improved, the quality of the forge piece is improved, and the strict indexes of manufacturing super-large parts are met.

The invention provides a generator rotor retaining ring dismounting auxiliary tool which comprises a fixing ring, a supporting rod and an adjusting rod, the fixing ring comprises a first half ring and a second half ring which are detachably connected, four positioning holes are formed in the fixing ring, and the fixing ring is suitable for being arranged outside a generator rotor shaft in a sleeving mode; the supporting rod penetrates through the positioning hole, is inserted into a gap between the generator rotor retaining ring and the generator rotor shaft and abuts against the end face of the generator rotor body. The adjusting rod is in threaded connection with the supporting rod and abuts against the end face of the fan seat ring. The supporting rods are supported between the generator rotor retaining ring and the generator rotor shaft, the stability of the generator rotor retaining ring can be guaranteed in the dismounting and moving process of the generator rotor retaining ring, and the generator rotor retaining ring is prevented from colliding with the generator rotor shaft. And the arranged adjusting rod can be flexibly adjusted according to the distance between the generator rotor retaining ring and the fan seat ring, so that the device has universality, is simple to operate and simple in structure, and saves cost.

The utility model provides an analog unit structure and an analog circuit device. The analog circuit device includes a bottom metal wiring layer including a plurality of tracks and an analog cell including an n-type metal oxide semiconductor (NMOS) active region and a p-type metal oxide semiconductor (PMOS) active region, a plurality of polysilicon layers, and a plurality of metal diffusion layers. In the simulation device, an NMOS (N-channel Metal Oxide Semiconductor) active region, a PMOS (P-channel Metal Oxide Semiconductor) active region, a plurality of polycrystalline silicon layers and a plurality of metal diffusion layers form a CMOS (Complementary Metal Oxide Semiconductor) structure. The apparatus also includes a plurality of guard ring cells surrounding the analog cell and a power rail structure configured to provide a connection between the bottom metal wiring layer and the analog cell.

A sealing device (100) is disposed in a gap (320) between an outer peripheral surface (201) of a rotating shaft (200) and an inner peripheral surface (310) of a shaft hole (301) in a housing (300) having the shaft hole (301) into which the rotating shaft (200) is inserted, and seals the gap (320), the sealing device (100) being provided with: a sealing body (10) in which the rotating shaft (200) is inserted; the sealing member (10) is configured to be provided with a core bar (30) made of a metal material and a sealing main body component member (20) made of an elastic body and integrated with the core bar (30), and the sealing main body component member (20) comprises a lip part (23). And a conductive lip (50) attached to the seal body (10) and a conductive guard ring (40), the guard ring (40) having a contact portion (41) that contacts the housing (300) and an inwardly extending portion (42) that extends radially inward from the contact portion (41), and the conductive lip (50) being integrated with the seal body (10) by being sandwiched between the inwardly extending portion (42) and the seal body (10).

The utility model relates to a pier scour protection device capable of self-adjusting steering according to water flow. The pier scour protection device comprises a base, a sliding groove and a connecting plate. The chute is welded on the top of the substrate; the scour protection assembly comprises a connecting ring, an anti-scour plate and a tail wing. The connecting ring is connected to the top of the rotating base; the anti-scouring plate and the empennage are arranged on the outer wall of the connecting ring; a cylindrical protrusion with holes is welded to one side of the top of the connecting plate, and holes are evenly distributed in the other side of the top of the connecting plate. A round hole is formed in one side of the top of the connecting ring, and open holes are uniformly distributed in the other side; rivets are fixed in the holes evenly distributed in the connecting plate and the connecting ring in a matched and penetrating mode. The connecting plate is connected to the bottom of the connecting ring through rivets. The utility model has the beneficial effects that the empennage realizes all-directional scouring protection on the pier, and solves the problem that the existing guard ring scouring protection technology can only protect water flow scouring in a fixed direction; the anti-scouring plate enables the bridge to operate safely and stably for a long time, and pier maintenance cost is reduced.

The invention relates to a height adjusting device for an outer race of a vertical steel ball machine. The height adjusting device comprises three lifting supporting columns and a lifting driving assembly. The lifting supporting column comprises a top support, a vertical lifting pipe and a horizontal nut. The top of the top support is in screw connection with the outer retainer, the bottom is in screw connection with the inner retainer, and a stepped hole is formed in the center; an outer step matched with the step hole is arranged outside the vertical lifting pipe; the vertical lifting pipe is inserted into the stepped hole from bottom to top; the inner wall of the bottom circular ring extends downwards to form a connecting cylinder; the top support is rotationally connected with a vertical supporting ring towards the inner side. The upper end of the vertical supporting ring abuts against the bottom of the connecting cylinder. The top of the vertical lifting pipe is coaxially connected with a top limiting ring in a threaded mode. The side face of the top limiting ring abuts against the side face of the connecting cylinder. The lifting driving assembly drives the horizontal nut to rotate; the bottom end of the vertical lifting pipe is in threaded connection with the horizontal nut. The device can deal with thinning of the lower millstone, reduces replacement operation of the lower millstone, guarantees working efficiency of the steel ball machine, and improves utilization rate of the lower millstone.

According to the invention, an integrated circuit arrangement is formed by reducing the injection of charge carriers into a semiconductor substrate. The circuit arrangement comprises a first and second half-bridge connected as a full bridge, wherein the drain terminals of the first transistors and the source terminals of the second transistors are electrically connected. The two parallel-connected source terminals of the second transistors are connected to the first terminal of a two-terminal resistor, while the second terminal of the resistor provides a connection for a negative supply voltage or ground potential. A Zener diode is connected between the source terminal (supply voltage) and the gate terminal of at least one of the first MOS transistors. The transistors are surrounded by at least one guard ring.The guard ring is implemented as a contacted N or P well on the P or N substrate. Around the guard ring, further P or N wells, insulated by means of deep trench structures, are arranged.

A method is used for training a reinforcement learning (RL) model to predict a breakdown voltage (BV) of a semiconductor device with a guard ring. The method comprises determining a set of structural parameters of the semiconductor device; preparing a training dataset formed by a plurality of manufacturing parameters of the semiconductor device, wherein the plurality of manufacturing parameters comprise a dose concentration and at least one dose energy of implanting a guard ring (GR) on the semiconductor device; and training the RL model using the training dataset by maximizing a reward function calculated based on a between a predicted BV value generated by the RL model and a target BV value corresponding to the plurality of manufacturing parameters.

The utility model discloses a kind of multi-component high-strength single-pipe tower, including tower body and ladder assembly, tower body includes the conical tower pipe of multiple segments flange connection in turn;Ladder assembly includes mounting bracket, ladder section and guard ring, mounting bracket includes mounting rod and welding column, mounting rod is vertically and is paired with one side of conical tower pipe, welding column is located at the side of mounting rod facing conical tower pipe, and is welded with conical tower pipe;Ladder section is straight ladder, and the two sides of ladder section are connected with two mounting rods respectively, and guard ring is detachably located at the side of ladder section away from mounting rod.The utility model discloses a kind of multi-component high-strength single-pipe tower, setting modular reliable structure, it is convenient to replace maintenance.

The application relates to the CMP polishing technical field and discloses a white pad for rough polishing of the flatness of a silicon wafer surface and a production process, which comprises a polyurethane-based rough polishing bottom layer, the surface of the polyurethane-based rough polishing bottom layer is provided with polishing grooves, the polishing grooves are cross pleat shaped, one side of the bottom end of the polyurethane-based rough polishing bottom layer is connected with a water conveying layer, the surface of the water conveying layer is provided with water conveying holes, the middle position of the water conveying holes is provided with spiral flow guide lines, the bottom end of the water conveying layer is connected with an inner lining layer, the outer edge of the inner lining layer is provided with an edge guard ring, the inner lining layer is arranged on the inner side of the edge guard ring, and the top end of the inner lining layer is connected with a positioning column. The white pad for rough polishing of the flatness of a silicon wafer surface and the production process can efficiently convey polishing liquid from the center to the edge in a directional manner, can quickly remove the friction heat in the center area, can realize uniform distribution of the polishing liquid on the silicon wafer surface, and can solve the polishing defects caused by uneven temperature of the existing white pad.