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385 results about "Guard ring" patented technology
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Semiconductor package with high density of through-silicon VIAS (TSV)
PendingUS20250054881A1Semiconductor/solid-state device detailsSolid-state devicesHigh densitySemiconductor package
A semiconductor package includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes: a silicon substrate; a seal ring formed at a front side of the silicon substrate and separating a central region and a peripheral region; a bonding layer formed at a back side and comprising a first metal pad; a multi-layer interconnect (MLI) structure; a through-silicon via (TSV) vertically penetrating the central region and at least a portion of the MLI structure, wherein a first end of the TSV is in contact with the first metal pad, and a second end of the TSV is electrically connected to a first metal track located in the MLI structure, wherein the TSV is characterized by a first diameter; and a guard ring formed in the MLI structure, wherein the guard ring is characterized by a second diameter smaller than the first diameter.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Reaction kettle material temperature measuring structure
The utility model relates to the technical field of reaction kettles, in particular to a reaction kettle material temperature measuring structure which comprises a temperature measuring mechanism, the temperature measuring mechanism comprises a fixing ring, an annular notch is formed in the outer surface of the fixing ring, a protection ring is installed in the annular notch, and a plurality of temperature measuring heads are arranged outside the protection ring. And the protection ring can detect the temperature of a plurality of positions in the reaction kettle body in real time through the plurality of temperature measuring heads. According to the embodiment, the protection ring is installed in the annular notch formed in the outer surface of the fixing ring, circuits of the temperature measuring heads are protected in the protection ring, the multiple temperature measuring heads can measure the temperature of multiple positions in the reaction kettle tank at the same time, the connecting rod can connect the connecting circuits of the multiple temperature measuring heads to the receiving assembly in the sealing sleeve, and therefore the temperature measuring efficiency is improved. Temperature measurement data of the plurality of temperature measurement heads are transmitted to the receiving assembly, so that the temperature measurement data of the temperature measurement heads can be received and processed, and the effect of measuring the temperature of a plurality of positions in the reaction kettle tank in real time is achieved.
Owner:SHANXI DETONG NEW MATERIALS CO LTD
High-precision integrated temperature and humidity sensor and construction method
The invention discloses a high-precision integrated temperature and humidity sensor and a construction method. The sensor comprises an MEMS humidity capacitance sensor, a CMOS integrated temperature sensor, an analog-to-digital converter, a calibration configuration information storage array and a digital interface. Wherein the MEMS humidity capacitance sensor and the CMOS integrated temperature sensor are respectively connected with the analog-to-digital converter, and voltage signals of the MEMS humidity capacitance sensor and the CMOS integrated temperature sensor are converted into digital signals; the analog-to-digital converter transmits the digital signal to the calibration configuration information storage array for data processing and linearization processing, and transmits the data to the SDAamp through a digital interface; in SCL; wherein the MEMS humidity capacitance sensor comprises a capacitance pole plate, a protection ring and a heating resistor; the capacitor plates adopt an interdigital capacitor structure and have a regular octagonal part in overlook observation, and meanwhile, the upper and lower electrode plates and the polyimide PI material layer between the two electrode plates form the interdigital capacitor structure.
Owner:EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
Metal-free frame design for silicon bridges for semiconductor packages
PendingUS20250070056A1Semiconductor/solid-state device testing/measurementSemiconductor/solid-state device detailsSemiconductor structureSemiconductor package
Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.
Owner:INTEL CORP
Cable twisting protection device and method for yaw system of wind generating set
The invention relates to the technical field of wind driven generators, and discloses a wind generating set yaw system twisted cable protection device and method.The device comprises a tower barrel and a twisted cable and further comprises supporting frames fixed to the two sides of the tower barrel, and limiting frames are fixedly connected between the opposite sides of the two supporting frames correspondingly; connecting plates are arranged between the opposite sides of the two limiting frames correspondingly, fixing plates are fixedly connected to the front side and the rear side of one side of each connecting plate correspondingly, and dampers are fixedly connected between the opposite sides of the two fixing plates correspondingly. Limiting holes in positioning rings penetrate into an annular protection shell, when a twisted cable shakes slightly, the twisted cable can abut against two protection rings in the annular protection shell, the protection rings are stressed to drive limiting rods and enable the limiting rings to stretch second springs to protect the twisted cable, a certain amount of space is stored in a limiting space, and therefore the twisted cable can be protected. Therefore, the cable is ensured not to be fixed at a certain position by strong force, and damage caused by friction and torsion concentration is reduced.
Owner:SDIC JIUQUAN NEW ENERGY CO LTD
SINGLE PHOTON AVALANCHE DIODE, ELECTRONIC DEVICE, AND LiDAR DEVICE
PendingUS20250040263A1Wave based measurement systemsSemiconductor devicesSingle-photon avalanche diodeCharge carrier
Disclosed is a single photon avalanche diode comprises a first well having a first conductivity type, a heavily doped region provided on the first well, a guard ring surrounding the heavily doped region, and a second region formed between the first well and the heavily doped region and configured to multiply charge carriers. The heavily doped region and the guard ring have a second conductivity type different from the first conductivity type. The second region extends onto a boundary between a lower portion of the guard ring and the first well.
Owner:TRUPIXEL INC
Rotor end guard ring deformation identification method and related device
The invention relates to a retaining ring deformation identification method for a rotor end portion and a related device, a retaining ring is installed at the rotor end portion of a generator, and the retaining ring is provided with a mark; the method comprises the following steps: acquiring initial position information corresponding to an identifier of the retaining ring in a static state; acquiring a detection image of the retaining ring at the first rotating speed, and determining detection position information corresponding to the identifier in the detection image; and determining deformation information of the retaining ring at the first rotating speed according to the initial position information and the detection position information. According to the method, by comparing the initial position information with the detection position information, the displacement amount of the identifier can be accurately measured, so that the deformation condition of the retaining ring is evaluated.
Owner:DONGFANG ELECTRIC MACHINERY
High density through substrate conductive structures
PendingUS20250192004A1Semiconductor/solid-state device detailsSolid-state devicesElectrical conductorHigh density
A semiconductor device is disclosed. The semiconductor device includes a first substrate. The first substrate includes a first dielectric layer, and a vertical conductive area, where the vertical conductive area includes at least two vertical conductive structures extending through the first dielectric layer, where each line segment of a non-square quadrilateral contacts at least one of the at least two vertical conductive structures. The vertical conductive area also includes a continuous conductive guard ring structure in the first dielectric layer, where the continuous conductive guard ring structure surrounds the at least two vertical conductive structures. The semiconductor device also includes a second substrate, including a first conductor, and a second conductor, where the first conductor of the second substrate is electrically connected to at least one of the at least two vertical conductive structures of the first substrate.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Semiconductor device
A semiconductor device has a superjunction layer and guard ring regions in a termination portion of a semiconductor substrate. The guard ring regions have a first guard ring region including at least an outermost guard ring region, and a second guard ring region located on an inner side of the first guard ring region. The first guard ring region is spaced apart from second conductivity type columns of the superjunction layer. The second guard ring region is in contact with the second conductivity type columns of the superjunction layer.
Owner:DENSO CORP +2
Image sensor with dual trench isolation structure
PendingUS20250349597A1Semiconductor/solid-state device manufacturingPhotovoltaic detectorsPhotodetector
In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Sensor for magnetic resonance imaging system, and associated system and examination tunnel
PendingUS20250067823A1Radiating elements structural formsMeasurements using magnetic resonanceMechanical engineeringMR - Magnetic resonance
A magnetic resonance imaging system that includes an array of antennas that includes a substrate, a plurality of antennas arranged on a first face of the substrate, and a plurality of guard rings. The guard rings are arranged only on the second face of the substrate, opposite the first face. A projection of each of the antennas on the second face of the substrate being circumscribed within a specific guard ring. The guard rings are spaced apart from one another.
Owner:CENT NAT DE LA RECH SCI (C N R S) +3
Unmanned aerial vehicle capable of landing and buffering
The invention relates to the technical field of unmanned aerial vehicles, and particularly discloses an unmanned aerial vehicle capable of landing and buffering, which comprises a fuselage shell, connecting arms are fixedly connected to the opposite angles of the side surfaces of the fuselage shell, and fan blade protection rings are fixedly connected to the ends, away from the fuselage shell, of the connecting arms. A driving motor is fixedly connected to the inner wall of the fan blade protection ring through a support, a driving shaft of the driving motor is fixedly connected with flying fan blades, a mounting frame is fixedly connected to the bottom of the fuselage shell, a damping device is fixedly connected to the bottom of the inner wall of the mounting frame, and a buffering mechanism is fixedly connected to the end, away from the supporting frame, of a fixing rod. According to the unmanned aerial vehicle capable of landing and buffering, the buffering mechanism is arranged, so that the impact force generated when the unmanned aerial vehicle descends can be buffered, and the damping device is arranged, so that the buffered vehicle body can be further damped; damage of parts in the unmanned aerial vehicle caused by violent vibration during descending is avoided.
Owner:SHENZHEN SILVER WINGED BIRD TECHNOLOGY CO LTD
Semiconductor device and method
PendingUS20250349691A1Semiconductor/solid-state device detailsSolid-state devicesDevice materialEngineering physics
In an embodiment, a device may include a first structure comprising a first surface and a second surface opposite the first surface. The first structure may include a first substrate and a first through substrate via (TSV) exposed from the second surface of the first substrate. The first TSV may have a first width. The device may also include a second TSV exposed from the second surface of the first structure, where the second TSV has a second width smaller than the first width. The device may further include a guard ring surrounding each of the first and second TSVs. Additionally, the device may include a second structure bonded to the first surface of the first structure, where the first surface has first bond pads.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
High density through silicon conductive structures
ActiveUS12237244B2Semiconductor/solid-state device detailsSolid-state devicesHigh densityDevice material
A semiconductor device is disclosed. The semiconductor device includes a first substrate. The first substrate includes a first dielectric layer, and a vertical conductive area, where the vertical conductive area includes one or more vertical conductive structures extending through the first dielectric layer, where each line segment of a non-square quadrilateral contacts at least one of the one or more vertical conductive structures. The vertical conductive area also includes a continuous conductive guard ring structure in the first dielectric layer, where the continuous conductive guard ring structure surrounds the one or more vertical conductive structures. The semiconductor device also includes a second substrate, including a first conductor, and a second conductor, where the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Method for testing compression creep performance of metal material under constant temperature condition
The invention discloses a method for testing compression creep performance of a metal material under a constant-temperature condition, relates to the technical field of high-temperature performance testing of metal materials, and aims to solve the problem of inaccurate creep measurement at a constant temperature. According to the invention, a full-process compression creep performance test method of constant temperature control, loading compensation and strain correction is constructed, the test accuracy and the result consistency of the metal material in a constant temperature environment are improved, closed-loop control is realized through actual measurement temperature, time delay prediction and retaining ring heating are introduced, the constant temperature stability is ensured, and the test accuracy is improved. A micro-stepping compensation mechanism is adopted to maintain constant pressure stress, a loading state is automatically recovered after interruption, then system deformation is deducted through main and auxiliary link cooperation and a compliance template, strain measurement precision is ensured, distortion caused by boundary friction is overcome in combination with end face stick-slip detection and equivalent strain correction, and the accuracy of strain measurement is improved. Finally, automatic output of performance parameters is achieved through steady-state segment extraction and anomaly recognition, and the effectiveness, reproducibility and engineering applicability of test data are guaranteed.
Owner:ZHEJIANG STATE INSPECTION & TESTING TECH CO LTD
Numerical control gear shaper for machining high-precision hardened face gear
InactiveCN120734442AMaintainance and safety accessoriesGear-cutting machinesNumerical controlCircular disc
The invention discloses a numerical control gear shaper for machining a high-precision hardened-tooth-face gear, and belongs to the technical field of numerical control machine tools. Through the combination of the ball screw, the linear guide rail and the penetrating transverse shaft, micron-order positioning and stable linear motion of the tool sliding table in the horizontal direction are achieved, the machine is compatible with gears of various sizes, the idle stroke is reduced, and the machining efficiency and the machine tool universality are improved; a quick-change clamping jaw, a transverse pull rod, a triangular cutting edge impact seat and a movable chip retaining ring are of an integrated structure, the cutting edge of the impact seat is always aligned with the edge of a gear, the movable chip retaining ring synchronously forms a closed protective cover, scrap iron is prevented from splashing, edge machining is faster, more stable and cleaner, and after a large gear bracket-annular tooth groove die hole is replaced, a large-size tooth groove can be formed at a time; and the thin-wall disc gear can be accurately positioned by the central positioning column, so that deformation is prevented. The whole machine has multiple purposes, and the universality and the flexibility are greatly improved.
Owner:YANTAI XINDEL GEAR CO LTD
Picoampere-level current measuring device with leakage estimation and digital compensation and picoampere-level current measuring method
PendingCN121364335ACurrent/voltage measurementTemperature compensation modificationLow noiseElectrical conductor
The invention provides a picoampere-level current measuring device and method with leakage estimation and digital compensation, and the device comprises an electrometer-level operational amplifier and a transimpedance feedback network which are used for converting a measured current into a voltage signal; in combination with a retaining ring conductor driven by a retaining ring buffer and an inner and outer double-layer metal shielding structure, high-resistance node leakage and external interference are remarkably reduced. The digital controller injects 5mV-50mV micro excitation into the retaining ring in a non-sampling window and detects output response so as to estimate input equivalent leakage conductance and perform online compensation; and meanwhile, environment self-adaptive correction is carried out according to a temperature and humidity-leakage admittance model. The system adopts a 24-bit analog-to-digital converter, two-stage zero-drift amplification and multi-point linearity calibration can be switched, picoampere-level current measurement with high precision, low noise and wide dynamic range is realized, and the system is suitable for the fields of high-insulation detection, light current measurement, electrochemical micro-current analysis and the like.
Owner:SHENZHEN FENGTIAN IND CO LTD
Detector device
Embodiments of the present application provide a detector device including a photon detector and a multilayer reflector. The photon detector includes a substrate, an isolation structure in a first side of the substrate, a guard ring adjacent to the isolation structure and in the first side of the substrate, a sensor node in the first side of the substrate, the guard ring between the sensor node and the isolation structure, a shared node in the first side of the substrate, the shared node between the guard ring and the isolation structure, an isolation extension structure in a second side of the substrate opposite the first side, the isolation extension structure extending from the second side to the isolation structure. The multilayer reflector is on the first side of the substrate. Using the multilayer reflector can improve collection of photons in an avalanche region.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Detection circuit and detection method of protection ring resistor, and memory
The invention provides a protection ring resistor detection circuit, a protection ring resistor detection method and a memory. The protection ring resistor detection circuit comprises a plurality of reference resistors, and the resistance values of the reference resistors are different; the first power supply is connected with the first end of the protection ring and the first ends of the plurality of reference resistors and is used for inputting first input voltage to the protection ring and the plurality of reference resistors; the current adjusting module is connected with the second end of the protection ring and the second ends of the plurality of reference resistors, and is configured to enable the current flowing through the protection ring and the plurality of reference resistors to have the same current value; and the resistance detection module is configured to obtain a first voltage value of the second end of the protection ring and a second voltage value of the second end of each reference resistor, and compare the first voltage value with each second voltage value to obtain a resistance value of the protection ring. The protection ring resistance detection circuit can accurately detect the resistance of the protection ring so as to accurately judge whether the protection ring fails or not.
Owner:CHANGXIN MINKE STORAGE TECH (SHANGHAI) CO LTD
Memory chip and method of manufacturing the same
PendingCN120076326ASemiconductor/solid-state device detailsSolid-state devicesMemory chipMechanical engineering
A memory chip and a method of manufacturing the same are provided. The memory chip includes: a memory region including a cell plug in which data is stored; and a guard ring surrounding the memory region. The guard ring includes sub-layers of the same material arranged in the same order as the layer forming the cell plug.
Owner:SK HYNIX INC
Coupled guard rings for edge termination
PendingUS20250031416A1Semiconductor/solid-state device manufacturingSemiconductor devicesDevice materialMechanical engineering
A semiconductor device includes an active device region and a plurality of guard rings arranged in a first concentric pattern surrounding the active device region. The semiconductor device also includes a plurality of junctions arranged in a second concentric pattern surrounding the active device region. At least one of the plurality of junctions is arranged between two adjacent guard rings of the plurality of guard rings, and the plurality of junctions have a different resistivity than the plurality of guard rings. The semiconductor device further includes a plurality of coupling paths. At least one of the plurality of coupling paths is arranged to connect two adjacent guard rings of the plurality of guard rings.
Owner:SEMICON COMPONENTS IND LLC
A dual-wavelength silicon-based pin photoelectric sensor with ultra-low dark current and high responsivity
The application relates to a dual-wavelength silicon-based PIN photoelectric sensor with ultralow dark current and high responsivity, which comprises a silicon substrate, a central P + anode region, high resistance / intrinsic silicon absorption region, bottom N + cathode region, junction termination extension region JTE, guard ring GRL, surface passivation layer and electrode structure. Through accurate regulation of the junction edge electric field, the application effectively suppresses the leakage current and early breakdown phenomenon caused by the high edge electric field in the plane PIN structure, realizes sub-nanoampere dark current output, and simultaneously, through synergistic optimization of the intrinsic region thickness and the doping distribution, the sensor obtains higher light responsivity at two typical wavelengths of 660 nm and 940 nm, and meets the requirements of short-wave shallow absorption and long-wave deep absorption.
Owner:DONGHUA UNIV
A semiconductor device, its fabrication method and its application
This invention provides a semiconductor device, its fabrication method, and its application. By setting a multi-layered ring structure outside the X-ray sensitive region, including a P-type charge collection ring, multiple P-type guard rings, and multiple N-type guard rings, the influence of leakage current and external electric fields outside the X-ray sensitive region is effectively shielded, thereby significantly improving signal quality and the stability of the semiconductor device. Furthermore, this structural design effectively suppresses plasma effects, further enhancing the sensitivity and signal-to-noise ratio of the semiconductor device. These performance improvements are crucial for the stable operation of the semiconductor device under high operating voltage environments. The semiconductor device of this invention can achieve a breakdown voltage of at least 600V and an operating voltage of at least 300V under irradiation, fully meeting the requirements of specific applications such as XFELs.
Owner:SHANGHAI TECH UNIV
semiconductor devices
The present invention provides a semiconductor device comprising: at least one transistor, a shallow well region, a guard ring, and a plurality of first doped regions and a plurality of second doped regions. The at least one transistor is located on a substrate, and the at least one transistor comprises a source structure, a gate structure, and a drain structure. The shallow well region surrounds the at least one transistor. The shallow well region has a first conductivity type. The guard ring surrounds the shallow well region. The guard ring has a first conductivity type. The first doped region and the second doped region are arranged within the guard ring and surround the shallow well region. The first doped region and the second doped region are alternately arranged to form a ring. Each of the first doped regions and each of the second doped regions have opposite conductivity types.
Owner:VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
Semiconductor structure and method of forming the same
PendingCN119421484ASemiconductor/solid-state device detailsSolid-state devicesNano structuringSemiconductor structure
A semiconductor structure according to the present disclosure includes a substrate; a through substrate via (TSV) unit disposed over the substrate; and a TSV extending through the TSV cell and the substrate. The TSV cell includes a guard ring structure extending around a perimeter of the TSV cell and a buffer surrounded by the guard ring structure. The buffer includes a first dummy transistor and a second dummy transistor. Each of the first dummy transistors includes two first type epitaxial features, a first plurality of nanostructures extending between the two first type epitaxial features, and a first isolation gate structure wrapped over the first plurality of nanostructures. Each of the second dummy transistors includes two second type epitaxial features, a second plurality of nanostructures extending between the two first type epitaxial features, and a second isolation gate structure wrapped over the second plurality of nanostructures. The embodiment of the invention also provides a method for forming the semiconductor structure.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Safety helmet with multiple adjusting structures
Owner:LINGGONG PROTECTIVE EQUIP (HUBEI) CO LTD
Schottky barrier diode
The Schottky barrier diode of the present invention comprises: an n-type semiconductor substrate; at least one p-type guard ring, which is arranged on the upper surface side of the semiconductor substrate; an anode electrode, which is arranged on the upper surface of the semiconductor substrate; a cathode electrode, which is arranged on the back surface of the semiconductor substrate; and an insulating film, which is arranged on the innermost inner guard ring of the at least one guard ring, the anode electrode being overlapped on the insulating film, the end of the anode electrode being arranged directly above the inner guard ring, the anode electrode being arranged separately from the inner guard ring, and the thickness of the insulating film being greater than or equal to 1.0 μm.
Owner:MITSUBISHI ELECTRIC CORP
Ring core die forging die and manufacturing method of million-grade nuclear power half-speed rotor retaining ring
The invention discloses a ring core die forging die and a million-grade nuclear power half-speed rotor retaining ring manufacturing method. The method comprises the following steps that S1, smelting is conducted, specifically, raw materials are smelted into a proper steel ladle through an electric furnace, then an LF furnace is adopted for conducting external refining on the steel ladle, then a VD furnace is adopted for conducting vacuum degassing refining on the steel ladle, and finally, the steel ladle is poured into a steel ingot; s2, forging: performing rounding and drawing-out on a forge piece, namely the steel ingot, cutting the head and the tail, upsetting the forge piece, drawing-out again, performing ring core die forging on the forge piece, upsetting the forge piece, punching, drawing-out a core rod, and chambering by adopting a saddle to obtain a steel ring; s3, rough machining; s4, solid solution heat treatment; s5, cold deformation strengthening; and S6, finish machining. Ring core die forging is added in free forging, the device can conveniently forge the annular position of the forge piece through ring core die forging, the forge piece is forged thoroughly, defects of the forge piece are forged, the structure is uniform, grains are refined, and therefore the problem that the forge piece is fractured due to the too large diameter during cold deformation is avoided.
Owner:DEYANG WANXIN POWER STATION PROD DEV
Contact structure and manufacturing method thereof
PendingCN120709222ASemiconductor/solid-state device detailsSolid-state devicesDielectric structureProtection layer
A contact structure according to the present disclosure includes a device layer over a substrate, a dielectric structure over the device layer, a first etch stop layer (ESL) over the dielectric structure, a through-via extending through the dielectric structure and the device layer and including a top of a through-via over the first ESL, a semiconductor device includes a first ESL disposed over a through hole, a guard ring structure disposed over the first ESL and around a top of the through hole, a protective layer disposed over the guard ring structure, a second ESL disposed conformally over a top surface of the first ESL, sidewalls of the guard ring structure, sidewalls of the protective layer, and a top surface of the protective layer, and a dielectric layer of the second ESL. The embodiment of the invention further discloses a method for manufacturing the contact structure.
Owner:TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
Semiconductor device with termination region and passivation layer and preparation method thereof
The present invention relates to a semiconductor device with an edge termination region and a passivation layer and a preparation method thereof; the device comprises a substrate, a drift region is provided on the upper end surface of the substrate; a first insulating film is provided on the upper end surface of the substrate; a plurality of guard rings are also provided on the upper end surface of the substrate, each guard ring extends into the drift region, and two adjacent guard rings are separated by the first insulating film; a second insulating film is provided on the first insulating film and the guard rings, a second insulating film through-hole is provided on the second insulating film, and an angle between the inner wall of each second insulating film through-hole and the upper end surface of the substrate is an acute angle; a metal layer is provided in each second insulating film through-hole; a first passivation layer is provided on the second insulating film and the metal layer; a second passivation layer is provided on the first passivation layer; a semiconductor device structure with an edge termination region and a passivation layer is proposed to solve the technical problems that the passivation layer above the metal layer of the existing structure is prone to cracks, humidity and other pollution can penetrate and corrode the metal layer, and there is a high electric field to catalyze the destruction of the terminal.
Owner:SAIJING ASIA PACIFIC SEMICON TECH (ZHEJIANG) CO LTD +1