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153results about How to "Short circuit" patented technology

Manufacturing method of organic electroluminescence element

A main object is to provide a manufacturing method of an organic EL element having excellent light emission characteristics, and capable of facilitating the organic EL layer patterning operation and obtaining preferable wettability change. To attain the object, the present invention provides a manufacturing method of an organic EL element comprising: a charge injecting and transporting layer forming step of forming a charge injecting and transporting layer containing a material having a liquid repellent functional group so as to have the wettability change by the action of the photocatalyst accompanied by the energy irradiation on a substrate with an electrode layer formed; a wettability changed pattern forming step of forming a wettability changed pattern with the wettability of the charge injecting and transporting layer surface changed by the energy irradiation in pattern after disposing the photocatalyst processing layer substrate, in which the photocatalyst processing layer containing at least a photocatalyst is formed on a base member, with a gap capable of providing the action of the photocatalyst accompanied by the energy irradiation to the charge injecting and transporting layer; and an organic EL layer forming step of forming an organic EL layer, which includes at least a light emitting layer, on the wettability changed pattern.
Owner:DAI NIPPON PRINTING CO LTD

Device for connecting a coaxial line to a coplanar line

The coaxial line comprises a coaxial inner conductor and a first dielectric layer encompassing the coaxial inner conductor and which is surrounded by a coaxial outer conductor. The coplanar line comprises a second dielectric layer with a coplanar inner conductor and a first and second coplanar outer conductor applied to the front side thereof and with a metallization layer followed by a substrate carrier layer on the rear side thereof. The first and second coplanar outer conductors are separated from the coplanar inner conductor by the second dielectric layer and the coaxial inner conductor is connected to the coplanar inner conductor and the coaxial outer conductor is connected to the first and second coplanar outer conductors. When high bit rate data signals are transmitted via the connecting point of the coaxial line and the coplanar line, the capacitative power is increased and undesirable reflections occur. In order to avoid this, a recess is provided in the metallization layer, beginning at the point of connection between the coaxial line and the coplanar line and extending in an approximately symmetrical manner with respect to the coplanar inner conductor, tapering in the direction of the coplanar inner conductor as the distance from the point of connection increases.
Owner:SIEMENS AG
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