The invention belongs to the technical field of power semiconductors, and particularly relates to a self-adaptive SOI LIGBT device. Compared with a traditional structure, the self-adaptive NMOS structure is introduced into the collector electrode end, and a Zener diode structure is introduced into the emitter electrode end. During forward conduction, the NMOS channel at the collector end is closed, an electron extraction path at the collector end is blocked to eliminate the voltage turn-back effect, and at the moment, the Zener diode is reversely biased but is not broken down, and holes storedin the drift region cannot be extracted, so that the new device can obtain low forward conduction voltage drop. In the turn-off process, along with rise of collector voltage, the collector NMOS channel is adaptively opened to form the electron extraction path, the Zener diode is reversely broken down and conducted to extract an emitter end hole, and the NMOS channel and the Zener diode accelerateturn off of the device to reduce the turn-off loss; and in a short-circuit state, the Zener diode is reversely broken down and conducted, so that the saturation current density can be reduced to improve the short-circuit resistance. Therefore, the device has smaller conduction voltage drop and turn-off loss, and a wider safety working area.