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202results about How to "Good strength properties" patented technology

Liquid crystal display panel structure and manufacturing method thereof

The invention discloses a liquid crystal display panel structure and a manufacturing method thereof, belonging to the technical field of the liquid crystal displays and being invented aiming to improve the display quality of the liquid crystal display. The liquid crystal display panel structure comprises a color film substrate and an array substrate which are oppositely arranged, supporting spacers are evenly distributed in a display area at one side of the color film substrate relative to the array substrate, the edge at one side of the color film substrate relative to the array substrate is stuck with the edge at one side of the array substrate relative to the color film substrate through frame sealing adhesive to form a closed area, and the closed area is filled with liquid crystals; a conducting spacer is arranged on the edge at one side of the color film substrate relative to the array substrate and is embedded in the frame sealing adhesive, and both ends of the conducting spacer are respectively in contact with the two substrates to realize the electric connection between the two substrates; and the conducting spacer has good supporting strength and good electric conductivity. The invention is suitable for improving the display quality of the liquid crystal display.
Owner:K TRONICS (SUZHOU) TECH CO LTD +1

Nitride semiconductor light-emitting device and production method thereof

Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.
Owner:TOYODA GOSEI CO LTD
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