The present invention relates to a method for producing
single crystal rods, particularly
silicon single crystal rods, by means of a pulling device (110) of a
crystal pulling apparatus (100), wherein the
crystal pulling apparatus (100) defines a
pendulum rotation center D, the defined stationary axis of the
crystal pendulum extends substantially along and through the height axis, wherein, during at least one pulling process, a substantially progressive
single crystal rod segment having an associated substantially progressive specified single crystal length is pulled from the melt according to a configurable variable target pulling speed of the pulling device (110) via a control device (120) to obtain a single crystal rod. During at least
one stage of the pulling process, the target pulling speed is controlled and variablely set via controlled actuation of the pulling device (110) and the control device (120), such that after each change in the setting of the target pulling speed, in order to continue the pulling process, the maximum
pendulum deflection of the asymptotic single crystal rod segment based on the stationary axis of the crystal pendulum develops into a function of the asymptotic pulling time and / or the asymptotic single crystal length, the amplitude of which and / or the difference in amplitude relative to the continuous amplitude decreases at least during the stage.