4results about How to "Reduce short circuit current" patented technology

The application discloses a composite negative electrode sheet, a preparation method thereof and a lithium battery. The composite negative electrode sheet comprises a current collector and an active material layer, a first insulating and heat-conducting coating layer and a second insulating and heat-insulating coating layer which are sequentially stacked on the current collector, wherein the first insulating and heat-conducting coating layer comprises an insulating and heat-conducting material, the second insulating and heat-insulating coating layer comprises an insulating and heat-insulating material, the particle size D50 of the insulating and heat-conducting material is D v1 , and the particle size D50 of the insulating and heat-insulating material is D v2 . D v1 <D v2 The composite negative electrode sheet can effectively improve the safety performance of the lithium battery.

The invention provides a method for constructing a simulation model of an on-load voltage regulation tap switch of a distribution transformer, and relates to the technical field of on-load voltage regulation of the distribution transformer, and the method comprises the steps: constructing a simulation model of the distribution transformer; the on-load voltage regulation tap switch is constructed; the protection circuit is constructed; constructing the voltage regulator and the control switch; constructing a time switch control module; constructing a control module of the on-load voltage regulation tap switch; and constructing a measurement display module. Through verification of a simulation model, the technical problems in the prior art that arc light exists during voltage regulation of a traditional mechanical on-load voltage regulation transformer, oil pollution is easy to generate, the failure rate is high, the voltage regulation flexibility is low, and the response speed is low can be solved.

The utility model relates to a circuit breaker operating mechanism with short-circuit tripping, belonging to low-voltage electric appliance technical field. Including drive link assembly, movable contact assembly, static contact assembly, energy storage assembly and lock catch device, one end of drive link assembly is hinged with energy storage assembly, the other end is hinged with movable contact assembly through connecting rod, when circuit breaker receives closing signal, energy storage assembly releases energy and drives drive link assembly to act, drive link assembly drives movable contact assembly to move to static contact assembly through connecting rod, drive link assembly includes jump catch spare that contacts with lock catch device, rotatory setting pivot spare, when movable contact assembly and static contact assembly just contact, the included angle between connecting rod and pivot spare is theta 1, when closing position, the included angle between connecting rod and pivot spare is theta 2, the proportional relationship of included angle theta 1 and included angle theta 2 is 0.8 < (sin theta 1 / sin theta 2) <1.5. Advantage: reduced the short-circuit current needed for circuit breaker operating mechanism unlocking, makes operating mechanism have faster corresponding speed.

The application provides an insulated gate bipolar transistor and a preparation method thereof. The preparation method comprises the following steps: providing a semiconductor layer comprising a substrate, a cell region, a transition region and a terminal region; performing ion implantation of a second conductive type in the cell region to form a first body region; forming a plurality of interval arranged groove structures in the cell region; forming a shielding layer on the upper surface of the semiconductor layer to expose the cell region, and forming an emitter region and a second body region based on the shielding layer, the bottom surface of the second body region is below the first body region, the upper surface of the second body region is in the first body region, the first body region and the second body region form a body region, and rapid annealing is performed on the second body region and the emitter region. The body region is formed by twice ion implantation of low energy and high energy, so that the concentration peak of the doping particles is located in the body region, the threshold voltage consistency of the device is ensured, rapid annealing is performed on the second body region and the emitter region, and the influence of thermal stress on the device is reduced.