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IGBT (insulated gate bipolar translator) protection method and protection circuit

A technology for protecting circuits and step-down circuits, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of poor reliability of IGBT and low accuracy of IGBT short-circuit judgment, and achieve the reduction of short-circuit current, extended time, and extended use The effect of longevity

Active Publication Date: 2013-02-13
HUAWEI DIGITAL POWER TECH CO LTD
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides an IGBT protection method and a protection circuit, which solves the technical problems of low accuracy of IGBT short circuit judgment and poor reliability of IGBT in the prior art

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  • IGBT (insulated gate bipolar translator) protection method and protection circuit
  • IGBT (insulated gate bipolar translator) protection method and protection circuit
  • IGBT (insulated gate bipolar translator) protection method and protection circuit

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Embodiment Construction

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] Such as figure 2 As shown, in the IGBT protection method provided by the embodiment of the present invention, the first threshold voltage and the second threshold voltage are preset, and the first threshold voltage is lower than the second threshold voltage. The protection method specifically includes the following steps:

[0022] S1: When the voltage of the collector of the IGBT is higher than the preset first threshold voltage, reduce the gate volta...

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Abstract

The embodiment of the invention discloses an IGBT (insulated gate bipolar translator) protection method and protection circuit and belongs to the technical field of electronic circuits, and the method and the circuit can be used for solving the problems of low accuracy of the IGBT short-circuit judgment and poor reliability of the IGBT in the prior art. The IGBT protection method comprises the following steps: reducing the grid voltage of the IGBT when voltage of an IGBT collector is higher than a preset first threshold voltage; and cutting off the grid voltage of the IGBT when the voltage of the IGBT collector is higher than a preset second threshold voltage. The IGBT protection circuit comprises a step-down circuit and a shut down circuit which are connected between the collector and the grid of the IGBT, wherein when the step-down circuit is used for reducing the grid voltage of the IGBT when the voltage of the IGBT collector is detected to be higher than the first threshold voltage; and the shutdown circuit is used for shutting down the grid voltage of the IGBT when the voltage of the IGBT collector is detected to be higher than the second threshold voltage. The IGBT protection method and the protection circuit are applied to control and protection of the IGBT.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to an IGBT protection method and a protection circuit. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a common electronic device in control circuits. During the working process, due to internal signal errors, external interference and other reasons, the IGBT will be short-circuited, and the current in the IGBT will increase sharply. At this time, the gate voltage of the IGBT needs to be turned off to avoid the IGBT from being burned out. [0003] However, due to various external application scenarios, the current of the IGBT during normal operation will also increase slightly in a short period of time or a short-term short-circuit overcurrent will occur. Therefore, in order to avoid false short-circuit reports, the current IGBT protection method Two detections were used. Such as figure 1 As show...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567H03K17/08
Inventor 严逢生唐志廖西征
Owner HUAWEI DIGITAL POWER TECH CO LTD
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