175results about How to "Improve crystallization" patented technology

The present invention has an object to provide a surface treatment apparatus, which can form a high-quality film at a high speed while preventing deterioration of the film due to collisions of charged particles.

The surface treatment apparatus (1) of the present invention comprises a casing (2) partitioned to two chambers, that is, a plasma generating chamber (3) provided with plasma generating electrodes (5, 5′) and a substrate processing chamber (4) provided with a substrate supporting table (8). A plasma vent (6) is formed in the electrode (5′) that composes the partition between the chambers (3, 4). A conductive mesh-shaped sheet (9) is disposed in a direction across the plasma between the plasma vent (6) and a substrate (S) on the substrate supporting table (8). The sheet (9), to which a variable bias is applied, captures charged particles in the plasma so that the charged particles can be excluded from the plasma.

An agglomerated zeolite adsorbent which comprises 95-99.5 mass % of X zeolite and 0.5-5.0 mass % of binder, wherein the exchangeable cationic sites of said X zeolite are occupied by Group IIA metal and/or K, the total pore volume of said adsorbent is no less than 0.26 mL/g as measured by mercury porosimetry, the volume of pores with pore diameters from 100 to 500 nm is at least 60% based on the total pore volume. During shaping, a pore-forming agent is added to this adsorbent, and then the adsorbent is alkali treated for in-situ crystallization, followed by ion exchange. Said adsorbent has high adsorption capacity, fast mass transfer rate and good mechanical strength. Said adsorbent is suitable for liquid phase adsorptive separation of para-xylene from C₈ aromatic hydrocarbons and is also suitable for adsorptive separation of other alkyl aromatic hydrocarbons isomers.

The invention relates to a gas shielded welding method and device of a narrow gap or a super-narrow gap impulse jet current consumable electrode controlled by electromagnetic of the heavy section part with middle and high strength. The invention uses a magnetic coil (3) to provide excitation current processed by an excitation source, which can generate an extra magnetic field. Under the conditions of narrow gap or super-narrow gap, high feed rate, fused drop spray transfer and impulse welding current, the process of the gas shielded welding of the rotating jet current consumable electrode with high-melting frequency pulse that is controlled by the electromagnetic for the heavy section part with middle and high strength can be realized. The device of the invention comprises the excitation source, excitation equipment, auxiliary equipment and a water cooling system. The excitation equipment is the magnetic coil (3) with or without a conducting core (5). The excitation equipment is fixed on a welding burner (6), which is positioned above a work piece (9). The excitation current provided by the excitation source (10) produces stationary or time-varying electromagnetic mixing magnetic field that has the combination control over the processes of arc welding, wire burn-off, drop transfer, melting bath flow and welding line coagulation, which finally forms the welding line of good quality.

Monolayer packages comprised of an oxygen scavenging composition suitable for direct contact with package contents and recycle with other polyester bottles are disclosed. The oxygen scavenging composition is comprised of a modified copolymer which is comprised of predominantly polyester segments and an oxygen scavenging amount of oxygen scavenging segments. The polyester segments comprise segments derived from typical bottling and packaging polyesters such as PET and PEN. Use of these oxygen scavenging copolymers in bottles provides a clear and rigid monolayer bottle similar in appearance to unmodified polyester bottles. In a series of preferred embodiments, bottles fabricated with the oxygen scavenging copolymers of this invention are over 99 wt % PET and contain less than 50 ppb of extractable components.

At edges of laser light on an irradiation surface or in the vicinity thereof, the energy density is attenuated gradually due to aberration of a lens or the like. Since such regions (attenuation regions) do not have enough energy density for annealing of an irradiation object, uniform annealing of the irradiation object is not possible.

In the present invention, one of the plural laser beams is divided into two laser beams so that each section of the two laser beams serves as an edge of the resultant laser light. Each attenuation region of the two laser beams is synthesized with an attenuation region of another laser beam. In this way, laser light every part of which has an energy density suitable for satisfactory annealing of an irradiation object can be obtained from plural laser beams having attenuation regions.

The solution (for example, a nickel acetate solution) containing a metal element such as nickel which accelerates the crystallization of silicon is applied to an amorphous silicon film by spin coating using a mask, to retain nickel in contact with the surface of the amorphous silicon film. Then, heating treatment is performed to crystallize selectively the amorphous silicon film, so that an amorphous region and a crystalline region are formed in the silicon film. In this state, the silicon film is heated to diffuse the metal element from the crystalline region to the amorphous region, thereby decreasing a concentration of the metal element in the crystalline region.

The present invention relates to methods and apparatuses for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates at a minimum thermal budget are required, and more particularly, to a polycrystalline silicon thin-film transistors (poly-Si TFTs) and PN diodes on glass substrates for various applications of liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and solar cells. According to the methods and apparatus of the present invention, the semiconductor films can be heat-treated without damaging the thermally susceptible substrates; e.g., crystallization of amorphous silicon films at the minimum thermal budget acceptable for the use of glass, enhancing kinetics of dopant activation at the minimum thermal budget acceptable for the use of glass.

The invention provides a method for preparing a perovskite solar cell on the basis of a two-dimensional material graphene-phase carbon nitride. The graphene-phase carbon nitride is doped into a perovskite precursor solution to prepare the perovskite solar cell. The method has the following advantages that (1) the raw material required for synthesis of the material is low in cost, and the product is small in toxicity; (2) solvent volatilization during the annealing process is effectively slowed down, so that a perovskite thin film crystal is more uniform and compact; (3) the grain crystal sizeof a perovskite layer is increased, a crystal boundary easy to combine with charge is effectively reduced, and the filling factor of a device is improved; (4) a surface of the perovskite thin film ispassivated, and the hysteresis phenomenon of the device is effectively improved; and (5) the conductivity of the surface of the perovskite thin film is improved, the contact resistance of the interface is reduced, and the short-circuit current of the device is increased. The preparation process is simple and convenient and is low in preparation difficulty; by doping of the graphene-phase carbon nitride, the smoothness and the uniformity of the perovskite thin film can be effectively improved; and by a series of gradient doping, the device performance is remarkably changed.

A one-pot industrial process for preparing 1,2,3,9-tetrahydro-9-methyl-3-[(2-methyl-1H-imidazole-1-yl)methyl]-4H-carbazol-4-one of Formula-(I) from 1,2,3,9-tetrahydro-9-methyl-4H-carbazol-4-one of Formula-(IV) involves reaction of Formula (IV) with HNR₁R₂ salt and paraformaldehyde, where R₁,R₂ are independently alkyl groups or together forms a cyclic alkyl group, in a solvent system of acetic acid and hydrocarbon solvent to form a crude mixture of intermediate compounds of Formula (III) and (VIII), which is converted to ondansetron (Formula (I)) without isolation by reaction with 2methyimidazole in a suitable solvent system in the same pot.

A multi-layer bioactive and biodegradable film. The multi-layer film includes one or more bioactive compounds or microorganisms for promoting growth and health of a plant, the bioactive compounds or microorganisms contained between layers of the film, wherein each one of the layers comprises about 60% to about 75% (m/m) polyhydroxyalkanoate. The bioactive compounds or microorganisms may include any one of or a combination of: a metabolite, an anti-microbial compound, an enzyme, a live microorganism, a fertilizer, a plant growth hormone, a preservative, a pesticide or an herbicide. Release of one or more bioactive compounds may be achieved in a timed and controlled manner.

An amorphous silicon layer and at least a heat-retaining layer are formed on a substrate in turn. Wherein, the heat-retaining layer is controlled to have an anti-reflective thickness for reducing the threshold laser energy to effect the melting of the amorphous silicon layer. Then, a laser irradiation process is performed to transform the amorphous silicon layer into a polycrystalline silicon layer. During the laser irratiation process, a portion of the laser energy transmits the heat-retaining layer to effect the melting of the amorphous silicon layer, and another portion of the laser energy is absorbed by the heat-retaining layer.

The crystallization method by laser light irradiation forms a multiplicity of convexes (ridges) in the surface of an obtained crystalline semiconductor film, deteriorating film quality. Therefore, it is a problem to provide a method for forming a ridge-reduced semiconductor film and a semiconductor device using such a semiconductor film. The present invention is characterized by heating a semiconductor film due to a heat processing method (RTA method: Rapid Thermal Anneal method) to irradiate light emitted from a lamp light source after crystallizing the semiconductor film by laser light, thereby reducing the ridge.

Methods are provided for producing biodegradable polyhydroxyalkanoates (PHAs) with desired geometry, molecular mass, mechanical and/or physical-chemical properties from glycerol, an inexpensive carbon source and byproduct of the biodiesel industry. Microorganisms capable of converting carbon to PHA can be used to convert biodiesel-glycerol to poly-3-hydroxybutyrate (PHB) or other monomer or copolymer PHAs via fermentation. The microorganisms are cultured in a medium comprising glycerol as a primary carbon source and one or more low molecular mass organic acids as a secondary carbon source. Biomass can be harvested from the culture medium and crude PHA extracted and purified, thereby recovering purified PHA with the desired property. After PHA isolation, a nucleating agent can be added to improve certain physical-chemical properties of the PHA; e.g., crystallization temperature, to enhance performance of the PHA during injection molding.

A barrier layer made of Al_xGa_1-xN (0<x≦0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or thickness of the barrier layer, luminous intensity of the device is improved.

An n-cladding layer made of Al_xGa_1-xN (0<x≦0.06) is formed in a light-emitting semiconductor device using gallium nitride compound. By controlling a composition ratio x of aluminum or thickness of the n-cladding layer, luminous intensity of the device is improved.

A p-type layer and an n-type layer are formed in a light-emitting semiconductor device using gallium nitride compound having a double-hetero junction structure. By controlling a ratio of a hole concentration of the p-type layer and an electron concentration of the n-type layer approximates to 1, luminous intensity of the device is improved.

The invention relates to a processing technology for refining weld joint structures in a welding process, in particular to a method and a device for refining weld joint structures by using pulsed magnet fields in the welding process, and belongs to the technical field of welding. The method for refining weld joint structures by using pulsed magnet fields in the welding process includes that welding is performed by using an ordinary gas metal arc welding method, an applied magnetic field is added above a gas metal arc welding pool, mechanical movement and welding gun movement of the magnet fields are synchronous, electric arc and melt drip transition action is controlled by the magnet fields in a welding process, metal melt in the gas metal arc welding pool is forced to move, an electromagnetic stirring effect is produced, and weld joint structures are finally refined in the welding process. According to the method and the device, in the welding process, the weld joint structures are refined, welding defects are reduced, and further the cost is reduced, and the welding quality and the production efficiency are improved.

A sidewall gate thin-film transistor (TFT) and associated fabrication method are provided. The method provides a substrate with a surface and forms a surface-normal feature. The surface-normal feature is normal with respect to the substrate surface, with a sidewall made from an electrical insulator. An active silicon (Si) layer is formed overlying the surface-normal feature, with a channel overlying the surface-normal feature sidewall. A gate insulator overlies the channel, and a sidewall gate overlies the gate insulator. More specifically, the gate insulator is formed from conformally depositing an electrical insulator layer overlying the active Si layer. The gate electrode layer is conformally deposited overlying the gate insulator layer and anisotropically etched, leaving a gate electrode sidewall adjacent to the gate insulator layer overlying the channel.