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Photovoltaic cell

A photoelectromotive force and component technology, applied in electrical components, photovoltaic power generation, circuits, etc., can solve the problems of photoelectric conversion efficiency reduction of photoelectromotive force components

Active Publication Date: 2006-08-30
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the photoelectric conversion efficiency of the photoelectromotive force element decreases

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0071] figure 1 and figure 2 It is a plan view and a bottom view of the photovoltaic element in the first embodiment of the present invention.

[0072] Such as figure 1 As shown, the photovoltaic element 100 includes an n-type single crystal silicon substrate 11 having a substantially square shape. On the main surface (light-receiving surface) side of the n-type single crystal silicon substrate 11, a surface electrode 12 is formed via an amorphous silicon film described later. On the surface electrode 12 , a plurality of stripe-like bus bar electrode portions 13 are formed parallel to each other, and a plurality of stripe-like finger electrode portions 14 are formed parallel to each other and perpendicular to the bus bar electrode portions 13 . The bus bar electrode portion 13 and the finger electrode portion 14 constitute a collector electrode 15 . The width of the bus bar electrode portion 13 is, for example, 1.5 mm, the width of the finger electrode portion 14 is, for ...

no. 2 approach

[0100] Figure 4 is a cross-sectional view showing the structure of the photovoltaic element in the second embodiment of the present invention.

[0101] Figure 4 The photoelectromotive force element 101 with image 3 The difference of the photovoltaic device 100 is as follows.

[0102] Such as Figure 4 As shown, in the photovoltaic element 101, the i-type amorphous silicon film 21a is formed on the entire area of ​​the main surface of the n-type single crystal silicon substrate 11, and the i-type amorphous silicon film 21a except for the predetermined width of the peripheral portion is formed on the i-type amorphous silicon film 21a. area with image 3 The n-type amorphous silicon film 22 is similarly formed in the photovoltaic device 100 . Furthermore, the surface electrode 12a covering the n-type amorphous silicon film 22 is formed on the i-type amorphous silicon film 21a.

[0103] Among them, since the surface electrode 12a and image 3 The front surface electrode ...

other Embodiment approach

[0108] In the above-described embodiment, the n-type single crystal silicon substrate 11 is used as the crystal system semiconductor substrate, but it is not limited to this, and instead of the n-type single crystal silicon substrate 11, an n-type polycrystalline silicon substrate may be used, and a p-type single crystal silicon substrate may be used, A p-type polysilicon substrate can also be used.

[0109] Among them, in the case of using a p-type monocrystalline silicon substrate or a p-type polycrystalline silicon substrate, a p-type amorphous silicon film is provided instead of image 3 and Figure 4 In the n-type amorphous silicon film 22, an n-type amorphous silicon film is provided instead of the p-type amorphous silicon film 24. Thereby, the same effect as that of the above-mentioned embodiment can be acquired.

[0110] Furthermore, the i-type amorphous silicon films 21, 21a, the n-type amorphous silicon film 22, and the p-type amorphous silicon film 24 may also con...

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Abstract

PROBLEM TO BE SOLVED: To provide a photovoltaic device with improved output characteristics. ŽSOLUTION: An i-type amorphous silicon film 21 and an n-type amorphous silicon film 22 are formed on a region except a predetermined width on an outer periphery of a principal plane of an n-type monocrystalline silicon substrate 11. A surface electrode 12 is formed to cover the films 21 and 22 on the principal plane of the n-type silicon substrate 11. An i-type amorphous silicon film 23 and a p-type amorphous silicon film 24 are formed entirely on the rear of the n-type substrate 11. A rear electrode 16 is formed on a region except a predetermined width on an outer periphery of the silicon film 24. The side of the surface electrode 12 serves as a main light receiving surface. Ž

Description

technical field [0001] The present invention relates to photovoltaic devices using semiconductor junctions. Background technique [0002] In recent years, the development of a photovoltaic element having a pn junction between an n-type single crystal silicon substrate and a p-type amorphous silicon film has been progressing. In such a photovoltaic device, in order to increase the photoelectric conversion efficiency, it is necessary to increase the curve factor F.F. while maintaining a high short-circuit current Isc and an open voltage Voc. [0003] However, since there are a plurality of interface levels at the joint between the n-type single crystal silicon substrate and the p-type amorphous silicon film, recombination of carriers occurs and the open voltage Voc decreases. [0004] Therefore, in order to suppress the recombination of carriers in the junction of the n-type single-crystal silicon substrate and the p-type amorphous silicon film, it is proposed to have a subst...

Claims

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Application Information

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IPC IPC(8): H01L31/04
CPCH01L31/0747Y02E10/548Y02E10/50Y02E10/547
Inventor 寺川朗浅海利夫
Owner SANYO ELECTRIC CO LTD
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