SiC MOSFET gradual-change level driving circuit and method applied to direct current solid state power controller
A level driving and driving circuit technology, applied in the field of SiCMOSFET gradient level driving circuit, can solve the problems of cumbersome implementation and poor operability, and achieve the effect of simplifying the adjustment process, suppressing voltage spikes, and achieving a simple structure
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[0032] The present invention will be further explained below in conjunction with the accompanying drawings.
[0033] Such as Figure 4 Shown, a kind of SiC MOSFET (silicon carbide metal oxide semiconductor field effect transistor) gradient level drive circuit suitable for DC solid-state power controller is characterized in that, comprises drive circuit, power circuit, control circuit and communication circuit; Power The switch MOSFET and its gradually changing level drive control circuit realize the turn-on and turn-off control of the main power circuit. If a short-circuit fault or an over-current fault occurs and the fault shutdown condition is met, the drive circuit sends a gradually changing level signal to turn off the power tube to realize short-circuit protection; otherwise, the delay protection of the circuit is realized according to the inverse time limit curve. According to the status of SSPC and the information from the current detection part, it provides load statu...
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