132 results about "Circuit reliability" patented technology

The invention relates to the technical field of integrated circuit reliability, and discloses an MOS device service life prediction method and system and electronic equipment, and the method comprises the steps: constructing a continuous time dynamic model, and expressing the degradation process of an MOS device; constructing a device relation graph structure, and capturing spatial correlation between devices; executing multi-time scale decomposition, and analyzing time sequence characteristics of device degradation; a self-adaptive numerical solution algorithm is applied to realize degradation track prediction; physical constraint regularization is implemented, and the physical rationality of the model is improved. By fusing the graph neural differential equation and the multi-time scale decomposition technology, the problems of insufficient discrete time modeling, neglect of a synergistic effect between devices, difficulty in multi-scale characteristic processing and the like in the prior art are solved, and high-precision prediction of the service life of the MOS device is realized.

The invention relates to the field of integrated circuits, in particular to a drive control circuit with dead-time control and voltage change rate interference resistance, which comprises a logic circuit, a high-side drive circuit and a low-side drive circuit, and is characterized in that the logic circuit is used for processing input high-low-side PWM (Pulse Width Modulation) control signals and high-low-side logic signals fed back in the circuit; interlocking between high and low side signals is realized; the high-side driving circuit is used for realizing level shift from a low-voltage logic signal to high-voltage driving, generating dead time and inhibiting anti-voltage change rate interference generated when a low-side power tube is conducted; the low-side driving circuit is used for generating dead time and suppressing anti-voltage change rate interference generated when the high-side power tube is conducted; the drive control circuit designed by the invention has the capabilities of dead time control and voltage change rate interference resistance, and the integration level of the circuit is improved while the reliability of the circuit is ensured.

The invention provides a VCO digital circuit control method and system with temperature compensation, and relates to the technical field of circuit control, and the method comprises the steps: obtaining VCO output frequency and real-time temperature, and calculating an initial frequency deviation; correcting the frequency deviation based on the temperature compensation coefficient, and generating a temperature-frequency deviation characteristic curve; an optimal compensation factor is determined through Monte Carlo sampling; calculating a compensation parameter adaptive weight by using Bayesian iteration, and dynamically adjusting a compensation factor; and a control signal is generated through the digital integrator to realize frequency calibration. According to the invention, the high-precision frequency stability of the VCO under the temperature change condition is realized, and the circuit reliability is improved.

The invention provides a control system for locking a bias working point of a silicon-based chip of an MZM structure, which comprises the silicon-based chip, two sampling circuits, an MCU control unit, a multi-channel operational amplifier and an upper computer, and is characterized in that the silicon-based chip comprises an MZM modulator, the MZM modulator comprises a modulation arm A, a modulation arm B, a heater, an A-arm photodiode and a B-arm photodiode, a sampling circuit collects voltage and current signals on a driving arm on the MZM modulator for feedback, the voltage and current signals are transmitted to a peripheral MCU control unit and uploaded to an upper computer, and the MCU control unit regulates and controls the voltage or current of a modulation arm A through a multi-channel operational amplifier. The invention further provides a control method of the control system for locking the bias working point of the silicon-based chip of the MZM structure. The occupied space in the high-speed optical module is small, so that the layout of other electric chips is facilitated, and higher circuit reliability is realized; a brand-new and accurate control method is designed.

The invention discloses a pulse wave signal detection-oriented transimpedance amplifier circuit with input voltage clamping and current offset functions, and relates to the technical field of integrated circuit design, the pulse wave signal detection-oriented transimpedance amplifier circuit comprises a pseudo-differential structure, a current offset module and a photosensitive diode, the pseudo-differential structure is composed of two independent operational amplifiers with double-end input and single-end output, the trans-impedance amplifier of a pseudo-differential structure composed of two independent operational amplifiers with double-end input and single-end output is used, the same voltage is connected to the same-direction input end of the trans-impedance amplifier, voltage clamping is carried out on double-end input, the differential mode precision and low-frequency stability of an input virtual site are improved, differential mode imbalance and flicker noise caused by operational amplifier mismatch are eliminated, and the stability of the trans-impedance amplifier is improved. The dynamic range of the pulse wave detection system is improved, and the pulse wave detection system has the advantages of high-precision and wide-range ambient light suppression effect, high circuit reliability, low circuit complexity, easy implementation, high loop stability, small area and low power consumption.

The invention provides a power-limited resonant converter and converter equipment, and relates to the technical field of electronic circuits. The power-limited resonant converter comprises a primary side circuit, a secondary side circuit, a transformer module and a resonant module, the resonant module comprises at least one resonant capacitor, two ends of each resonant capacitor are reversely connected in parallel with a clamping unit, the clamping units are used for being disconnected when the current of the resonant converter is lower than a preset current, and the resonant converter works in a resonant state. When the current of the resonant converter is not lower than the preset current, the resonant capacitor is conducted and bypassed, and the resonant converter works in a non-resonant state. According to the invention, the voltage of the resonant cavity is limited to the preset value through the clamping units which are reversely connected in parallel, so that the current of the resonant cavity is reduced, the current of a switching tube can be fundamentally prevented from rapidly rising, the primary side current is always in a safe range, a conventional overcurrent protection scheme that primary side driving is blocked by overcurrent of a middle circuit does not need to be adopted, and the reliability of the circuit is improved.

According to the high-temperature-resistant level switching circuit for the high-temperature environment, one end of a resistor R6 is connected with a TTL serial port signal sending pin, the other end of the resistor R6 is connected with a base electrode of a triode Q3, and a collector electrode of the triode Q3 is connected to a resistor R2 and a resistor R4; the emitter of the triode Q3 is grounded; the resistor R4 is connected with a base electrode of the triode Q1, a collector electrode of the triode Q1 is respectively connected to the resistor R1, the diode D1, the diode D2 and a first RS485 / RS422 sending pin, and an emitting electrode of the triode Q1 is grounded; one end of the resistor R11 is connected with a TTL serial port signal sending pin, the other end of the resistor R11 is connected with a base electrode of the triode Q5, and a collector electrode of the triode Q5 is respectively connected to the resistor R10, the diode D7, the diode D8 and a second RS485 / RS422 sending pin; the emitter of the triode Q5 is grounded. According to the utility model, a communication circuit is effectively prevented from being damaged by extremely high temperature in a high-temperature environment, and circuit reliability is ensured.

The utility model discloses a packaging structure. The packaging structure comprises a rectification unit; a power factor correction unit; the power unit comprises a low-side driving chip, a high-side driving chip, a plurality of low-side transistors driven by the low-side driving chip, and a plurality of high-side transistors driven by the high-side driving chip; a lead frame having a plurality of pins; the plastic package body wraps the lead frame, the rectification unit, the power factor correction unit and the power unit; the plastic package body comprises a first side edge and a second side edge which are opposite to each other, and a third side edge and a fourth side edge which are opposite to each other, the plurality of pins extend to the outside along the third side edge and the fourth side edge of the plastic package body, and the power factor correction unit is located between the rectification unit and the power unit. The three units are integrated in the same packaging structure, so that the packaging structure has the functions of rectification, power factor correction and inversion, the peripheral wiring is simplified, the cost is reduced, and the circuit reliability of the packaging structure is improved.

The utility model relates to the technical field of electronic power, and discloses an electric leakage protection circuit and electrical equipment, and the electric leakage protection circuit comprises a reference voltage circuit, a signal output circuit, a first voltage comparison circuit and a second voltage comparison circuit. The second output end of the reference voltage circuit is connected with the second voltage comparison circuit, the output end of the second voltage comparison circuit is connected with the first input end of the first voltage comparison circuit, and the second voltage comparison circuit outputs a second voltage comparison signal when the leakage voltage is larger than the first reference voltage. The second reference voltage is connected to the first input end of the first voltage comparison circuit, and the input voltage of the first input end of the first voltage comparison circuit is instantly increased to a fixed voltage value, so that misjudgment caused by fluctuation of the input voltage of the first voltage comparison circuit due to noise interference and the like is avoided; the electric leakage unlocking action is prevented from being frequently executed due to small voltage fluctuation, so that the reliability of the electric leakage detection circuit is greatly enhanced.

The invention discloses a static soft error sensitive bit rapid identification method. The method comprises the following steps: establishing a signal topological relation of each module of a circuit and storing related information of each module; establishing a complex network model of each module from top to bottom; obtaining a complex network circuit and numbering each node; the adjacent signal ratio, the shortest path ratio and the signal connection ratio of each node are obtained and serve as evaluation indexes; constructing an evaluation matrix; constructing a weighted normalized matrix; and obtaining a key signal which has a great influence on the circuit, and the like. The method can be applied to circuit design of aircraft airborne equipment and the like in a complex environment, and reference can be provided for the initial stage of reliability design of a digital circuit of the aircraft airborne equipment. The method can accurately identify the soft error sensitive bit during subsequent reliability analysis of the digital circuit, and can be used for subsequently judging the influence of fault injection of the soft error sensitive bit on the function and performance of the digital circuit. The method is high in sensitive position identification applicability, and can be suitable for accurately identifying sensitive positions under various architectures.

This invention discloses a frequency self-calibration circuit based on a voltage-mode RC relaxation oscillator, belonging to the field of integrated circuits. By storing time errors, it performs negative feedback control on the trigger times of the rising and falling edges of the output clock signal, automatically calibrating the output signal frequency. Furthermore, it achieves DC deviation elimination in the self-calibrating operational amplifier, significantly reducing offset voltage. This invention solves the problem of unstable signal output frequency in voltage-mode RC relaxation oscillator circuits due to changes in ambient temperature. It can be applied to Delta-Sigma ADC circuits, filter circuits, phase-locked loop circuits, etc., improving resistance to ambient temperature changes and compensating for comparator switching delays. t d This improves the linearity of the clock oscillator, enhances circuit reliability, and meets the accuracy requirements of highly integrated signal chain acquisition systems.

The utility model relates to a time relay control circuit, which comprises an anti-interference module, a normally-closed driving module, a normally-open driving module, a normally-closed access module, a normally-open access module, a switch driving module and a voltage-stabilized power supply module. By integrating the anti-interference module, external interference signals are effectively isolated and filtered, the stability of signals received by the timer chip is ensured, the reliability and stability of the whole control circuit are improved, the normally-closed access module and the normally-open access module are each provided with two independent processing circuits, multi-path signal input is supported, and the reliability and stability of the control circuit are improved. In addition, elements such as P-channel field effect transistors and N-channel field effect transistors are adopted, accurate control and processing of signals are achieved, the circuit response speed is increased, the normally-closed driving module and the normally-open driving module utilize elements such as optocouplers and metal film resistors to stably drive contact switches, the switch driving module further enhances the driving capacity, and the circuit reliability is improved. The voltage-stabilized power supply module provides stable working voltage to ensure normal operation of the circuit.

The application provides a VCO digital circuit control method and system with temperature compensation, relates to the technical field of circuit control, and comprises the following steps: obtaining a VCO output frequency and real-time temperature, and calculating an initial frequency deviation; correcting the frequency deviation based on a temperature compensation coefficient, and generating a temperature-frequency deviation characteristic curve; determining an optimal compensation factor through Monte Carlo sampling; dynamically adjusting the compensation factor by using a Bayesian iteration to calculate a compensation parameter adaptive weight; and generating a control signal through a digital integrator to realize frequency calibration. The application realizes high-precision frequency stability of the VCO under the condition of temperature change, and improves circuit reliability.

The application claims a kind of fast level shift circuit for power management chip, including level shift core circuit and low delay path detection circuit.The application uses resistance R1 to make PMOS tube M5-M6 drain voltage can quickly from V DDH Drop to V SSH , improve circuit transient characteristics, shorten voltage conversion delay and reduce switching loss;Adopt PMOS tube M13-M14 to constitute pull-up MOS tube, make PMOS tube M5-M6 drain voltage quickly rise, reduce switching loss;Adopt gate, source and substrate short NMOS tube M7-M8 to realize diode, make PMOS tube M5-M6 drain low voltage not less than V SSH -0.7, improve circuit reliability, adopt inverter to realize delay chain technology, make corresponding NAND gate output a lower pulse signal, and then circuit output a high voltage signal consistent with input signal change, so as to realize high-performance fast level shift circuit.

The utility model provides a DFN2510-10L packaging device for enhancing the reliability of a common mode circuit, which comprises a plurality of pin groups, each pin group comprises two oppositely arranged pins, and a connecting part made of conductive materials is arranged between the two pins in each group; and the chip is fixed on one pin, and a welding window of the chip is electrically connected with at least one pin in each pin group. According to the utility model, the connection part is arranged between the two corresponding pins, so that the two pins are electrically connected in the device, thereby preventing unstable performance of the common-mode circuit caused by virtual connection and short circuit in the common-mode circuit, improving the reliability of the circuit, and prolonging the service life of the common-mode circuit. And meanwhile, the connection reliability between the pin and the packaging medium is improved.

The application discloses an integrated circuit daisy chain structure and a failure positioning method, and the circuit structure comprises a plastic package substrate, substrate wiring, a substrate via, a substrate test pad, a BGA pad, a chip, chip internal wiring, a TSV via, a chip pad and a flip chip solder joint. A plurality of substrate wirings and substrate test pads are arranged on the front surface of the plastic package substrate, the substrate wiring is connected with the substrate test pad and the flip chip solder joint, the substrate via is connected with the substrate wiring and the BGA pad; a plurality of internal wirings are arranged on the side of the chip facing the plastic package substrate, the internal wiring is connected with the flip chip solder joint, each flip chip solder joint is connected to the back surface of the chip through the TSV via, and the chip pad is manufactured, and the position and quantity of the chip pad are consistent with the quantity and position of the flip chip solder joint. The application solves the problem that the large quantity of flip chip solder joints in the plastic package flip chip daisy chain circuit causes the solder joint failure and the failure cannot be accurately positioned, and is helpful to the development of package failure analysis and the improvement of the plastic package flip chip process quality and the guarantee of the reliability of the plastic package flip chip circuit.

The invention discloses an on-off output circuit with contact feedback, an output method and a system, and relates to the technical field of industrial control, and the key points of the technical scheme are as follows: an output port of a processor is connected with a first port of a primary side of a relay, and is used for providing a driving signal for the closing and opening of the relay; a secondary side second port of the relay is connected with the feedback unit, serves as an input port of the feedback unit and is used for providing conduction current for the feedback unit; a first output port of the feedback unit is connected with an input port of the processor and is used for feeding back the conduction condition of the secondary side of the relay to the processor; and the processor is also used for receiving the feedback signal generated by the feedback unit and judging the fault condition of the switching value output circuit according to the level states of the driving signal and the feedback signal. The problem that a switching value output circuit provided in the prior art is insufficient in reliability is solved.

The invention provides an error checking and correcting circuit and a memory, and the circuit comprises a first time sequence regulation and control circuit, a second time sequence regulation and control circuit, a reading amplification circuit, an operational circuit, a time sequence matching circuit and a latch circuit, the time delay and the wiring time delay of the first time sequence regulation and control circuit, the reading amplification circuit and the operation circuit are matched through the second time sequence regulation and control circuit and the time sequence matching circuit, so that the time delays of control signals and operation time in the circuits are basically close under different process angle, voltage and temperature conditions, and the waiting time can be shortened; the read-out error correction efficiency of the circuit is improved while asynchronous data signal acquisition is completed, the circuit structure is simple, the used circuit area is small, and the time sequence matching circuit does not involve winding on the circuit layout, so that the time delay effect close to the circuit can be obtained on the premise that wiring matching is not performed, and the circuit reliability is improved. And meanwhile, a part of area is saved, and the flexibility is improved.

The present invention provides a half-bridge synchronous rectification integrated circuit and a control method thereof, including a filtering circuit and a synchronous rectification circuit. The filtering circuit is connected to the power supply to be rectified and is connected to the synchronous rectification circuit. The synchronous rectification circuit includes a first synchronous rectification tube, a first hysteresis comparison circuit, a first logic control circuit, a second synchronous rectification tube, a second hysteresis comparison circuit, a second logic control circuit, and a driving circuit. The first logic control circuit is connected to the first hysteresis comparison circuit to control the switching of different working gears of the first hysteresis comparison circuit. The second logic control circuit is connected to the second hysteresis comparison circuit to control the switching of different working gears of the second hysteresis comparison circuit. The first logic control circuit and the second logic control circuit respectively control the conduction or cut-off of the first synchronous rectification tube and the second synchronous rectification tube through the driving circuit. The present invention integrates half-bridge rectification and synchronous rectification, and has a simple circuit structure, achieving the effects of improving the reliability of the circuit and reducing costs.

The present application provides a MOSFET device and a manufacturing method thereof, relating to the field of semiconductor technology. The MOSFET device includes an N-type substrate; an N-type epitaxial layer located on one side of the substrate; a P-type well region, a first P-type doped region, a second P-type doped region, and an N-type doped region located within the N-type epitaxial layer; wherein, the P-type well region, the first P-type doped region, and the second P-type doped region are arranged in sequence and in contact, the N-type doped region is located above the first P-type doped region, and both sides of the N-type doped region are in contact with the P-type well region and the second P-type doped region respectively; the doping concentrations of the P-type well region, the second P-type doped region, and the first P-type doped region increase in sequence, and the depth of the first P-type doped region is greater than the depth of the P-type well region; a gate region located on one side of the P-type well region and the N-type doped region. The present application has the advantages of reducing the short-circuit risk of the device, and improving the thermal reliability, short-circuit reliability, and robustness of the device.

The utility model discloses a kind of switch power supply over-voltage and under-voltage protector based on magnetic latching relay, it is related to electric power control field, solve the circuit reliability insufficient and cannot be applicable to wide voltage range scene by conventional relay.Between the input end of switch power supply circuit connects live wire and zero line, its output end is connected voltage control circuit in turn, voltage signal circuit input end is parallel between live wire and zero line, and its output end is accessed voltage control circuit;Relay action circuit is electrically connected with voltage control circuit, for executing on-off action when the voltage signal output by voltage control circuit exceeds or is lower than set threshold value.Switch power supply circuit as front-end processing unit, it can adapt to the conversion demand of wide range ac input voltage, magnetic latching relay is more advantageous in power consumption, action stability, can accurately and timely execute protection action according to the instruction of voltage control circuit under the condition that input voltage fluctuation is larger.

This invention discloses a complete set of high-current, wide-power-range, all-dielectric-isolated BCD-on-SOI integrated technology and ESD-protected VDMOS devices. The integration steps are as follows: 1) Forming an N-type buried layer and a P-type buried layer on the surface of the substrate silicon wafer. 2) Forming a DTI deep trench isolation region. 3) Forming a vertical DMOS drain-side-well N+-N-type buried layer interconnect structure. 4) Forming an insulating silicon top-side-well P+-P-type buried layer interconnect structure. 5) Forming an ESD-protected vertical DMOS device structure. 6) Completing the planarization of the device-metal inter-dielectric layer. 7) Completing the through-hole tungsten plug structure fabrication. 8) Sputtering aluminum-copper film layers and completing the metal interconnect etching process. The device includes a P-type substrate silicon wafer, an N-type buried layer, a P-type buried layer, an insulating silicon dioxide buried layer, a P-type device layer, a dielectric isolation trench region, an N-type epitaxial layer, a P-type epitaxial layer, a gate dielectric layer, a polycrystalline thin film, an oxide thin film, a tungsten plug, and a metal thin film layer. This invention solves the integration problem of high-current vertical DMOS with BCD-on-SOI process, as well as the challenge of high-density standard device integration, thereby improving the circuit reliability of the process.

The invention discloses an MCU dual-port fixed side differential type signal output control method, and relates to the technical field of output signal control circuits, the MCU dual-port fixed side differential type signal output control method comprises an AC / DC module, a voltage stabilization module, an MCU, an optocoupler relay, a triode driving circuit and an electromagnetic relay, the first output end of the AC / DC module is in signal connection with the voltage stabilization module and the MCU in sequence, and the second output end of the AC / DC module is in signal connection with the optocoupler relay. The MCU is connected with an optocoupler relay through a dual-port signal, the optocoupler relay is in signal connection with the electromagnetic relay through a triode driving circuit, and the electromagnetic relay is connected with a second output end of the AC / DC module. The multi-isolation technology is adopted, and the reliability and safety of the circuit are guaranteed. According to the invention, a fixed side differential signal transmission mode is adopted, and the signal transmission stability is ensured. A signal-light-electricity-electromagnetic transmission mode is adopted, and stable and efficient signal transmission is guaranteed.

The invention belongs to the technical field of power electronics, and discloses a BUCK upper tube driving circuit, which comprises a fast voltage domain conversion circuit, a slow voltage domain maintenance circuit, a secondary voltage domain conversion circuit, a driving signal detection circuit and a power level circuit, the fast voltage domain conversion circuit and the slow voltage domain maintenance circuit are connected in parallel, and the corresponding output ends are jointly connected to the input end of the secondary voltage domain conversion circuit; the output end of the secondary voltage domain conversion circuit is connected to the input end of the driving signal detection circuit and the input end of the power level circuit. The output end of the power level circuit serves as the driving output end TGDRV of the whole driving circuit. Through the structural design of the BUCK upper tube driving circuit, the upper tube driving of the BUCK circuit in the working range of 6-120V power supply voltage can be realized, the switching frequency is supported to 2MHz, when the circuit is in a static state, no theoretical static power consumption exists, the design requirement of low power consumption can be met, and meanwhile, the circuit is provided with a driving signal detection circuit, so that the circuit reliability is improved.

Embodiments of the present disclosure provide an enhanced phase-locked loop (PLL) circuit and an enhanced charge pump circuit used for various applications, including high-speed data clock generation for complex integrated circuit (IC) designs. The disclosed PLL circuit and charge pump circuit enable significant power and supply current reduction, improved circuit reliability; reduced self-heating and electro-migration risk, and enable use of lower power operational amplifiers with the operational amplifiers driving high impedance nodes.

The invention discloses a circuit aging overcoming method based on a post-silicon regulation technology, and relates to the field of digital integrated circuit reliability design, and the circuit aging overcoming method comprises the steps: determining a slow path in a plurality of data paths in a monitored circuit, the target trigger in each low-speed path is connected with an establishment time violation early-warning unit, and the establishment time violation early-warning unit generates an establishment time early-warning signal when monitoring that the connected trigger is about to generate an establishment time violation; the target triggers of the multiple low-speed paths are divided into multiple trigger groups, each trigger group corresponds to one clock adjusting unit, and the target trigger of each low-speed path in each trigger group is connected with the corresponding clock adjusting unit; and the clock adjusting unit configures the clock edge delay arrival time of the connected trigger based on the establishment time early warning signal so as to realize the effect of overcoming circuit aging. The method can effectively overcome circuit aging and improve circuit reliability.

The invention relates to the technical field of energy storage power supplies, and mainly provides a photovoltaic insulation detection fault positioning circuit and an energy storage system. The circuit comprises a detection module, a first control module, at least one second control module and at least two positioning modules. The first control module and the second control modules are connected with the detection module and the corresponding photovoltaic input sources respectively, control signals are output in sequence, the corresponding photovoltaic input sources are connected into the detection module, insulation detection of multiple paths of photovoltaic input sources through a single detection module is achieved, and the circuit cost is reduced. The detection module detects the insulation impedance of the accessed photovoltaic input source when receiving the driving signal, and outputs a fault signal when the impedance is lower than a preset range, thereby responding to the fault in time, and improving the reliability of the circuit. And after the positioning module receives the corresponding control signal and the fault signal, an indication signal is output, the fault photovoltaic input source is accurately positioned, the troubleshooting time is shortened, the labor cost is reduced, and the operation and maintenance efficiency is improved.

The invention discloses a switching power supply and a power tube driving circuit for the switching power supply, and the power tube driving circuit comprises a logic control module which is used for generating a conduction control signal and a turn-off control signal according to a received switching control signal; the driving module is used for generating a gate driving signal of the power tube according to the turn-on control signal and the turn-off control signal, the gate driving signal has a first slope and a second slope which are related to time in the turn-off process of the power tube, and the first slope is larger than the second slope; the voltage detection module is used for detecting drain-source voltage of the power tube when the power tube is turned off so as to obtain a voltage detection signal; the variable slope control module is used for comparing the voltage detection signal with the reference voltage and adjusting the time duration of the first slope of the gate driving signal in the next switching period according to the obtained comparison result, so that the turn-off loss of the power tube cannot be increased while the voltage stress in the turn-off process of the power tube is reduced; and meanwhile, high-efficiency driving and circuit reliability are considered.

The invention relates to the technical field of power electronics, and discloses a self-driven rectifying circuit. Comprising a rectifier tube, a follow current tube, a third switch tube, a fourth switch tube, a dead zone adjusting circuit comprising a first capacitor and a first voltage-regulator tube, a main transformer comprising a first induction coil and a second induction coil, a first amplitude limiting circuit comprising a sixth switch tube, and a second amplitude limiting circuit comprising a fifth switch tube. According to the technical scheme, self-driving is achieved through the main transformer driving winding, the simplified peripheral circuit design is adopted, the component cost is effectively reduced, a safe dead zone is set through the dead zone adjusting circuit, the risk that a rectifier tube and a follow current tube are communicated together is completely eradicated through the interlocking circuit, and driving signal overshoot is restrained through the amplitude limiting circuit; the low cost is maintained while the high performance is ensured, so that the switching loss is effectively reduced, the circuit reliability, the anti-interference capability and the overall efficiency are improved, and the defects of large conduction loss, low reliability and high cost of traditional diode rectification are overcome.

This invention discloses an industrial RFID reader / writer suitable for high-temperature and high-pressure environments and its data transmission method. The RFID reader / writer includes a shell, a PCB board, and a memory. The shell has a heat insulation layer on the inside. The PCB board includes a high-temperature circuit module, a dual-mode communication module, a pressure compensation system, and a power supply module. The high-temperature circuit module, dual-mode communication module, and pressure compensation system are installed inside the heat insulation layer. The high-temperature circuit module includes a main control unit, an RFID radio frequency unit, a temperature monitoring unit, and a power management unit. This invention has strong tolerance to extreme environments, high circuit reliability, and a continuous working life of ≥10,000 hours, which is more than 5 times that of traditional readers / writers. It has no dead zones in communication, long working time, and meets the long-term use requirements of highly corrosive media environments. The RFID communication submodule supports the ISO18000-6C protocol, has a maximum identification distance of 8 meters, and can identify 50 tags per second simultaneously.