Neutralizing bootstrap cascode amplifier suitable for millimeter-wave power amplification

Abstract

The invention discloses a neutralizing bootstrap cascode amplifier suitable for millimeter-wave power amplification. Structurally, the amplifier is formed by cascading a pair of bootstrap capacitor common-gate transistors and a pair of capacitor neutralizing common-source transistors up and down, a first neutralizing capacitor is bridged on the gate of the first common-source transistor and the drain of the second common-source transistor, and a second neutralizing capacitor is bridged on the gate of the second common-source transistor and the drain of the first common-source transistor. Bootstrap capacitance formed between the neutralizing capacitors and the source and the drain of the common-gate transistors eliminates the impact of parasitic capacitance of the drains of the common-source transistors, so that the gain and stability of the amplifier are improved; and the cascode amplifier increases the swing of an output signal without increasing the voltage swing of the transistor, so that the output power of the amplifier is improved, and the circuit is more reliable.

Description

technical field [0001] The invention belongs to a power amplifier in electronic circuit design, in particular to a radio frequency power amplifier in a millimeter wave communication system, in particular to a neutralization bootstrap cascode amplifier suitable for millimeter wave power amplification applications. Background technique [0002] In recent years, wireless communication technology has developed rapidly. In the process of communication technology development, especially millimeter wave communication technology, its position in communication is particularly important. For the E-band in the millimeter wave frequency band, including two frequency bands of 71-76GHz and 81-86GHz, it has gradually become a key role in future 5G mobile communication networks such as mobile backhaul and small communication networks. The millimeter wave signal will be severely attenuated in the atmosphere. For high-speed transmission links with a transmission rate of Gbps and above, under...

AI Technical Summary

Problems solved by technology

The former improves power gain and stability by neutralizing the parasitic capacitance between the gate and drain of the transistor, but the output power is still low, while the latter improves the output power by increasing the output signal swing, but the performance such as power gain is poor

[0005] In existing cascode amplifiers, compound semiconductors such as GaAs, which are excellent in gain and efficiency, are used, but they are relatively expensive

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