The invention discloses a metal interconnection structure of an integrated circuit and a preparation method for the metal interconnection structure. A graphene covering layer is coated on the upper surfaces of upper layer metal interconnection lines of the metal interconnection structure of the integrated circuit by utilizing the proper unique molecular structure and the electrology characteristic of graphene. As the electromigration-resistance current density of the graphene can reach 109A/cm<2>, once when small cavities appear in metal conductors due to electromigration, current can be possibly conducted through the graphene coated on the surfaces of the metal conductors, and thereby, the growth rate of the cavities in the metal interconnection lines is effectively lowered, the electromigration resistance of the metal interconnection lines is increased, and the service lives of the metal interconnection lines are prolonged. Meanwhile, the graphene coated on the surfaces of the metal interconnection lines is also capable of effectively stopping the growth of crystal whiskers, and thereby, the short circuit risk caused by the growth of the crystal whiskers is lowered. Moreover, the graphene covering layer is capable of effectively isolating the metal conductors from contacting with the air so as to retard or eliminate the oxidation of the surfaces of the metal interconnection lines, and thereby, the reliability of the interconnection lines of the integrated circuit is improved.