Nano-electrode-array for integrated circuit interconnects

a technology of integrated circuits and electron arrays, applied in the field of semiconductor technology, can solve the problems of reducing the advantage of using high conductivity materials, short circuits in integrated circuits, and uniform thickness of very thin layers of integrated circuits
US20070284746A1Inactive Publication Date: 2007-12-13KLA TENCOR TECH CORP

Patent Information

Authority / Receiving Office
US ยท United States
Patent Type
Applications(United States)
Current Assignee / Owner
KLA TENCOR TECH CORP
Publication Date
2007-12-13
Estimated Expiration
Not applicable ยท inactive patent

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Abstract

An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
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Description

CROSS-REFERENCE TO RELATED APPLICATION(S)

[0001] This is a Divisional of co-pending application Ser. No. 10 / 990,273 filed Nov. 15, 2004, which is hereby incorporated by reference herein.TECHNICAL FIELD

[0002] The present invention relates generally to semiconductor technology and more specifically to integrated circuit interconnects. BACKGROUND ART

[0003] In integrated circuits, transistors are made on a semiconductor substrate and connected together using integrated circuit interconnects. This process is performed using a number of different photolithographic, deposition, and removal processes to create contacts to the transistors, trenches to the contacts, and vias interconnecting the trenches where there are more than one level of channels.

[0004] Generally, a device dielectric layer is deposited over the transistors, openings are formed through the device dielectric layer down to transistor junctions and gates, and the openings are filled with a conductive metal to form contacts...

Claims

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