Nano-electrode-array for integrated circuit interconnects

a technology of integrated circuits and electron arrays, applied in the field of semiconductor technology, can solve the problems of reducing the advantage of using high conductivity materials, short circuits in integrated circuits, and uniform thickness of very thin layers of integrated circuits

Inactive Publication Date: 2007-12-13
KLA TENCOR TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This diffusion can result in a conductive buildup and cause short circuits in the integrated circuits.
A problem exists in forming very thin layers of a uniform thickness for integrated circuits.
A problem occurs with high resistance in the interconnects with decreasing size which reduce the advantage of using high conductivity materials, such as copper, which are desirable for high speed and high reliability interconnections.
A problem occurs with proper deposition on porous ultra low dielectric constant materials coming into use.
Solutions to these problems have been long sought but prior developments have not taught or suggested any solutions and, thus, solutions to these problems have long eluded those skilled in the art.

Method used

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  • Nano-electrode-array for integrated circuit interconnects
  • Nano-electrode-array for integrated circuit interconnects
  • Nano-electrode-array for integrated circuit interconnects

Examples

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Embodiment Construction

[0037] In the following description, numerous specific details are given to provide a thorough understanding of the invention. However, it will be apparent that the invention may be practiced without these specific details. In order to avoid obscuring the present invention, some well-known circuitry and process steps are not disclosed in detail.

[0038] Likewise, the drawings showing embodiments of the transistor are semi-diagrammatic and not to scale and, particularly, some of the dimensions are for the clarity of presentation and are shown greatly exaggerated in the FIGs.

[0039] In addition, where multiple embodiments are disclosed and described having some features in common, for clarity and ease of illustration, description, and comprehension thereof, similar and like features one to another will ordinarily be described with like reference numerals.

[0040] Referring now to FIG. 1, therein is shown a plan view of an integrated circuit 100 in accordance with an embodiment of the pr...

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Abstract

An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION(S) [0001] This is a Divisional of co-pending application Ser. No. 10 / 990,273 filed Nov. 15, 2004, which is hereby incorporated by reference herein.TECHNICAL FIELD [0002] The present invention relates generally to semiconductor technology and more specifically to integrated circuit interconnects. BACKGROUND ART [0003] In integrated circuits, transistors are made on a semiconductor substrate and connected together using integrated circuit interconnects. This process is performed using a number of different photolithographic, deposition, and removal processes to create contacts to the transistors, trenches to the contacts, and vias interconnecting the trenches where there are more than one level of channels. [0004] Generally, a device dielectric layer is deposited over the transistors, openings are formed through the device dielectric layer down to transistor junctions and gates, and the openings are filled with a conductive metal to form contacts...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/82
CPCH01L21/76843H01L21/76844Y10S977/723H01L21/76868H01L21/76874H01L21/76846
Inventor LOPATIN, SERGEY D.FIORDALICE, ROBERTPINTCHOVSKI, FAIVELIVANOV, IGORKONG, WEN Z.KOLICS, ARTUR
Owner KLA TENCOR TECH CORP
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