21 results about "Pentacene" patented technology

A kind of pentacene field effect transistor of improving anti-fatigue characteristic, n-type semiconductor layer and charge trapping layer with shallow energy level trap are arranged in pentacene field effect transistor structure;Device has bottom gate type structure: gate electrode / gate insulating layer / n-type semiconductor film / charge trapping dielectric layer with shallow energy level trap / tunneling layer / pentacene / source (drain) electrode;Gate electrode is conductor, resistivity is between 0.1-0.001 Ω·cm;Gate insulating layer dielectric film is insulator, thickness range is 5-150nm;The thickness of n-type semiconductor film layer is 1-200nm;Charge trapping dielectric layer with shallow energy level hole trap, thickness is 1-100nm;Tunneling layer is insulator, thickness range is 1-20nm;Pentacene thickness range is 1-100nm;Source-drain electrode is conductor, thickness range is 50-200nm;Gate electrode is conductor.

The present disclosure provides an X-ray sensing device. The X-ray sensing device includes a substrate, a first metal electrode, a second metal electrode, an X-ray photoelectric conversion layer, a third metal electrode, and an insulating layer. The first metal electrode and the second metal electrode are on the substrate and separated from each other. The X-ray photoelectric conversion layer extends continuously on the substrate and directly contacts the first metal electrode and the second metal electrode. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6,13-bis(triisopropylsilylethynyl)pentacene, poly(9,9-dioctylfluorene), polydimethylsilane, or combinations thereof. The third metal electrode and the insulating layer are on the substrate, and the third metal electrode is separated from the first metal electrode, the second metal electrode, and the X-ray photoelectric conversion layer by the insulating layer.

The invention discloses a heterojunction-based bipolar synapse transistor and a preparation method thereof, and the heterojunction-based bipolar synapse transistor comprises a gate layer, a gate insulating layer located on the surface of the gate layer, a charge storage layer located on the surface of the gate insulating layer, and a semiconductor layer located on the surface of the charge storage layer. The drain electrode and the source electrode are located on the surface of the semiconductor layer. The charge storage layer is prepared from n-type N, N '-dioctyl-3, 4, 9, 10-perylene dicarboximide through vacuum evaporation; and the semiconductor layer is prepared by vacuum evaporation of p-type pentacene. According to the transistor prepared by the invention, a balanced bipolar behavior is combined with an effective charge capture mechanism, the functions of a memory and a photoelectric synapse transistor can be realized at the same time, and the transistor has huge application potential in the aspect of constructing a brain-like computing system.

The invention belongs to an organic field effect transistor, and particularly relates to an organic semiconductor heterojunction photon synapse transistor and a preparation method thereof. The organic semiconductor heterojunction photon synapse transistor comprises a source electrode, a drain electrode, an organic active layer, a gate insulating layer and a gate electrode, the organic active layer is composed of an N, N '-disalicylidene group-1, 3-diaminopropane layer and a pentacene layer. The transistor provided by the invention has good transistor field effect and photon flash memory performance, has good light control synapse performance, and can realize various types of light synapse functions. And the device is mainly dominated by NSP, the photoresponse rate and the photoresponse dynamic range at 435 nm are maximum, and the near ultraviolet light can be well identified. Due to the relative stability of the small molecule material, the performance of the device does not decline within the temperature range of 120 DEG C, and meanwhile self-adaptive learning can be achieved at different temperatures.

The invention belongs to the technical field of organic field effect transistors, and particularly relates to a high-mobility field effect transistor based on an organic double-quantum well structure and a preparation method of the high-mobility field effect transistor. The high-mobility field effect transistor comprises a grid electrode, an insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, the insulating layer is located between the grid electrode and the organic semiconductor layer, an OTS modification layer is arranged between the insulating layer and the organic semiconductor layer, and the organic semiconductor layer is composed of a C8-BTBT layer / (Pentaene layer / C8-BTBT layer) n and n = 2 in the direction from the grid electrode to the source electrode and the drain electrode. According to the organic double-quantum well composed of C8-BTBT and pentacene, a potential well is formed by alternating different energy gap materials, carriers are limited in a narrow energy band region, scattering is reduced, directional transportation is promoted, and the mobility of the transistor is greatly improved.

The application discloses a carbon nanotube dispersion system, a high-cleanliness carbon nanotube oriented array and a preparation method. The preparation method of the high-cleanliness carbon nanotube oriented array comprises the following steps: uniformly mixing carbon nanotubes, an organic solvent and nitrogen-doped or non-nitrogen-doped pentacene system molecules to form a carbon nanotube dispersion system; immersing a substrate into the carbon nanotube dispersion system in a light-proof environment to prepare a carbon nanotube oriented array; and finally irradiating the carbon nanotube oriented array with ultraviolet rays, and then performing solution immersion and vacuum sublimation to obtain the high-cleanliness carbon nanotube oriented array. The carbon nanotube dispersion system provided by the application uses nitrogen-doped or non-nitrogen-doped pentacene system molecules as a dispersant, and the dispersant can be decomposed by ultraviolet irradiation, so that the dispersant will not be finally left on the surface of the carbon nanotubes, and the high-cleanliness carbon nanotube oriented array can be prepared.

The invention relates to a TOPCon battery and a preparation method thereof.According to the TOPCon battery, a singlet fission layer is arranged on an aluminum oxide passivation layer of a battery piece, high-energy singlet excitons can be generated after high-energy photons are absorbed, the high-energy singlet excitons are converted into two triplet excitons, the short-circuit current of the battery piece can be increased, meanwhile, heat loss is not caused, and the efficiency of the battery piece is improved. And the conversion rate of the battery piece can be improved. In addition, a sulfanyl compound is introduced into the pentacene singlet fission layer, so that the stability and singlet fission performance of the singlet fission layer can be improved. Besides, the ultrathin passivation layer containing hafnium oxynitride is arranged below the singlet fission layer, so that the singlet fission performance of the singlet fission layer can be promoted, and a silicon semiconductor can be prevented from being passivated.

The invention discloses a preparation method of a sodium ion battery negative electrode polypentaphenyl tetraketone sulfide / molybdenum ditelluride composite material, which comprises the following steps: 1, preparing a precursor 2, 5-bis (4-chlorobenzoyl) terephthalic acid by taking pyromellitic dianhydride, chlorobenzene and aluminum chloride as raw materials; 2, 2, 2, 5-bis (4-chlorobenzoyl) terephthalic acid, trifluoromethanesulfonic acid and trifluoromethanesulfonic anhydride are used as raw materials, and a precursor 2, 9-dichloropentaphenyl-5, 7, 12, 14-tetraketone is prepared; 3, preparing a precursor molybdenum ditelluride (MoTe2) by taking Mo powder and Te powder as raw materials; 4, 2, 9-dichloropentacene-5, 7, 12, 14-tetraketone, MoTe2 and sodium sulfide nonahydrate are used as raw materials to prepare a molybdenum ditelluride composite material (PPTS-coated MoTe2) coated with polypentaphenyl tetraketone thioether, and the molybdenum ditelluride composite material (PPTS-coated MoTe2) can be used as the negative electrode material of the sodium ion battery after being purified, dried and the like. The invention is used for sodium ion batteries, and has the characteristics of high capacity and good cycle stability.

The invention relates to the technical field of photodynamic therapy, in particular to a synthesis method of an algae integrated oxygen supply platform based on OLED photoelectric shielding material modification, and the method comprises the following steps: step 1, selecting a photoelectric material based on pentaperylene diimide (PPD), including PPD derivatives modified by PPD-Se, PPD-Te and PPD-Br and containing heavy atoms as a core photosensitizer; step 2, mixing a photoelectric material based on PPD, a PEG derivative containing PPD-Se and a responsive chemical bond, and DSPE-PEG-S-S-NHH through a coprecipitation method, and stirring for 1-6 hours at the temperature of 30-70 DEG C to form PPD type photoelectric material nano-particles with the particle size within the range of 80-120 nm, namely PPD-based NPs; step three, pretreatment and compounding of green algae: chlorella, scenedesmus and chlamydomonas are used as oxygen supply carriers, the surface of the green algae is modified through carboxymethyl chitosan CMCS, and carboxyl groups are introduced; and step 4, combining the modified PPD type photoelectric material nano particles with the microalgae through amido bonds, so as to form the microalgae-photoelectric material composite system Alga (at) PPD-based.

The invention discloses a fluorenyl dark red luminescent material which adopts 9, 9-diphenylfluorene or 9, 9 '-spirobifluorene as a basic skeleton, and 6, 13-bis (triisopropyl silyl ethynyl) pentacene is introduced into a site 2 of a fluorenyl molecular skeleton; the preparation method comprises the following steps: carrying out a coupling reaction on 2-bromo-6, 13-bis (triisopropyl silyl ethynyl) pentacene and 2-(9, 9-diphenyl-9H-fluorene-2-yl)-4, 4, 5, 5-tetramethyl-1, 3, 2-dioxaborane or 2-(9, 9 '-spirobis [fluorene]-2-yl)-4, 4, 5, 5-tetramethyl-1, 3, 2-dioxaborane, so as to obtain a compound 2-DTIPSPcDPF or a compound 2-DTIPSPcSBF, and carrying out a coupling reaction on the compound 2-DTIPSPcDPF or the compound 2-DTIPSPcSBF and the compound 2-DTIPSPcSBF, so as to obtain the compound 2- The compound prepared by the invention has excellent luminescent property and good thermal stability; the fluorenyl dark red material has the advantages of low cost of skeleton raw materials and simple synthesis steps, provides a new thought for designing and synthesizing a novel fluorenyl dark red material, and can be applied to the field of organic electroluminescent devices or fluorescence sensors.

The present invention discloses a composite cathode material, a preparation method thereof, a cathode sheet and a battery, relating to the technical field of batteries; the composite cathode material includes a core and a shell wrapped around the outer circumference of the core, the core is a conjugated organic material embedded with alkali metal ions, and the shell is a fluorinated pentacene compound. On the one hand, the conjugated organic material has good electrical conductivity, can reduce the resistance of charge transfer, make the battery polarization smaller, and the cycle performance is more excellent; at the same time, the embedding of alkali metal ions can supplement the alkali metal lost during the charge and discharge process to improve the cycle performance, specific capacity and first efficiency performance of the battery; on the other hand, the fluorinated pentacene compound has high electron mobility and electronegativity, can improve the electrical conductivity of the material, and increase the transmission rate of alkali metal ions to further improve the cycle performance, specific capacity and first efficiency performance of the battery.

The invention discloses an organic synapse transistor and a transistor synapse regulation and control method, the organic synapse transistor is arranged to be a bottom gate top contact structure, and the organic synapse transistor comprises a heavily doped silicon gate substrate; a silicon dioxide layer gate dielectric layer; the up-conversion nanoparticle layer is used as a near-infrared light response layer and is used for absorbing near-infrared light of 940-1000nm and generating visible light up-conversion luminescence; the polymer thin layer is used as an interface modification / charge regulation and control layer; the pentacene thin film is used as an organic semiconductor channel; a source electrode and a drain electrode connected to the organic semiconductor channel layer; an interface charge state capable of being trapped / stored / released is formed on a polymer interface of the thin polymer layer so as to regulate and control threshold voltage and channel carrier distribution, so that the device realizes one-way programming in a limited electrical stimulation polarity window and realizes erasure reset under irradiation of near-infrared light. The structure is clear and repeatable, electrical stimulation one-way programming is easy to achieve, and erasure resetting can be achieved through near-infrared light.

The invention discloses a field effect transistor device with a double-plane body heterojunction structure and capable of improving the current switching ratio and a preparation method, and belongs to the field of organic field effect transistors. The field effect transistor device structure sequentially comprises an N-type heavily-doped silicon grid (6), a SiO2 dielectric layer (5), a P-type organic material (4), an N-type organic material and P-type organic material blending layer (3), an N-type organic material (2) and an electrode (1) made of copper. The preparation method comprises the steps of cleaning a silicon wafer, evaporating the pentacene active layer, evaporating the pentacene / hexadecafluorophthalocyanine copper blending layer, evaporating the hexadecafluorophthalocyanine copper active layer, preparing the source / drain electrode and the like. Compared with the conventional heterojunction technology, the field effect transistor with the double-heterojunction structure is formed by adding the blending layer formed by mixing and growing two materials, the performance of the field effect transistor is greatly broken through, the advantage of lower leakage current is shown, the current switching ratio is greatly increased, and meanwhile, the mobility is increased.

The application discloses a perovskite quantum dot / organic semiconductor single crystal heterojunction transistor and a preparation method thereof. The perovskite quantum dot / organic semiconductor single crystal heterojunction transistor comprises a gate, an insulating layer, a photosensitive layer, an active layer, a source and a drain. The gate, the insulating layer, the photosensitive layer and the active layer are arranged in parallel and connected in a vertical direction from bottom to top. The source and the drain are arranged in parallel and connected to the upper surface of the active layer. The photosensitive layer is a Cs2AgBiBr6 quantum dot film, and the active layer is a pentacene single crystal. The preparation method of the perovskite quantum dot / organic semiconductor single crystal heterojunction transistor comprises the following steps: covering the Cs2AgBiBr6 quantum dot film on the insulating layer as the photosensitive layer; transferring the pentacene single crystal to the upper surface of the photosensitive layer as the active layer; and arranging the source and the drain on the active layer. The perovskite quantum dot / organic semiconductor single crystal heterojunction transistor obtained by the application shows strong field effect, high on / off ratio and high hole mobility.

The present application relates to the field of carbon nanomaterials, in particular to stack-controllable axial growth carbon quantum belt and two-dimensional film and preparation and application thereof. The present application takes 5,7,12,14-pentacene tetrone as a carbon source precursor, and axial growth carbon quantum belt and two-dimensional film which can be solution-processed and stack-controlled are obtained through formamide solvothermal method under concentrated sulfuric acid condition. The axial growth carbon quantum belt prepared by the present application can control the conjugated stacking mode between molecules through weak interaction force, form two-dimensional film with dense surface and good conductivity, and has wide application prospect.

The invention discloses an organic vertical cavity surface emitting laser and a preparation method thereof, relates to the technical field of semiconductor preparation, and aims to solve the problems that in the prior art, when a reflecting material layer is formed on the surface of an organic material layer through a traditional PVD or sputtering process, the coating uniformity is not easy to control, and the step coverage rate is relatively poor. The laser comprises a semiconductor substrate, a first distributed Bragg reflector, an organic crystal film layer and a second distributed Bragg reflector which are sequentially arranged from bottom to top, wherein the organic crystal film layer comprises a 4, 4-dicarbazole-stilbene organic micro-nano crystal film layer, a styrene organic micro-nano crystal film layer or a pentacene organic micro-nano crystal film layer, and each of the first distributed Bragg reflector and the second distributed Bragg reflector comprises a plurality of aluminum oxide film layers and hafnium oxide film layers which are alternately arranged. The reflecting film layer of the laser is uniform and controllable, and the laser has excellent reflectivity and other properties.

The present application relates to the field of molecular optoelectronic devices, and provides a single-molecule entangled two-photon emission source, a preparation method, an application method and a device thereof, comprising a silicon wafer as a substrate, a plurality of paired metal electrodes on the silicon wafer, a graphene nanogap point electrode pair between the paired metal electrodes, and a pentacene dimer derivative molecule assembled on the graphene nanogap point electrode pair. The present application provides a single-molecule entangled two-photon emission source that can be used for polarization encoding encryption, and uses the single-molecule entangled two-photon emission source for polarization encoding encryption after preparation.

The application discloses a two-dimensional organic-inorganic heterojunction capable of generating interlayer excitons and a preparation method thereof, and the preparation steps comprise the following steps: S1, preparing double-layer pentacene crystals by a physical vapor phase transmission method; S2, preparing single-layer tungsten selenide crystals by a mechanical exfoliation method or a chemical vapor deposition method; and S3, transferring the single-layer tungsten selenide to the double-layer pentacene by a dry transfer method to prepare a single-layer tungsten selenide / double-layer pentacene heterojunction. The two-dimensional single-layer tungsten selenide / double-layer pentacene heterojunction capable of generating interlayer excitons is prepared by designing a band arrangement and adopting a dry transfer process.

This invention discloses a gateless organic thin-film transistor controlled by a piezoelectric electret and its fabrication method, relating to the field of organic electronics technology. The method includes: obtaining a polypropylene film; treating the polypropylene film by thermal expansion and then subjecting the thermally expanded polypropylene film to corona polarization to obtain a porous polypropylene piezoelectric electret film; depositing a pentaphenyl semiconductor layer on the surface of the porous polypropylene piezoelectric electret film to form an organic semiconductor layer; depositing source and drain electrodes on the organic semiconductor layer using a photomask; depositing an encapsulation layer on at least a portion of the surface of the source electrode, at least a portion of the surface of the drain electrode, at least a portion of the surface of the organic semiconductor layer, and between the source and drain electrodes; and leading out the source and drain electrodes using wires. This invention integrates the advantages of passive piezoelectric tactile sensing with transistor signal amplification through the coupling of piezoelectric effect, field effect, and semiconductor properties, realizing a direct, active human-machine interaction mode.

The present disclosure provides X-ray sensing panels, X-ray sensing elements, methods of using the same, and methods of forming semiconductor structures including the same. The X-ray sensing element includes a substrate, first and second metal electrodes on the substrate, an X-ray photoelectric conversion layer continuously extending on the substrate and contacting the first and second metal electrodes, and a third metal electrode and an insulating layer on the substrate. The first and second metal electrodes are spaced apart. The X-ray photoelectric conversion layer includes silicon, amorphous selenium, germanium, cadmium zinc telluride, bismuth iodide, lead oxide, Cs2TeI6 perovskite, CsPbBr3 perovskite, bismuth-based halide perovskite, 6, 13-bis (triisopropylsilylethynyl) pentacene, poly (9, 9-dioctylfluorene), polydimethylsiloxane, or a combination thereof. The third metal electrode is separated from the first and second metal electrodes and the X-ray photoelectric conversion layer by an insulating layer. The X-ray photoelectric conversion layer directly absorbs X-rays and generates light current. The X-ray sensing element has multiple structural patterns, is highly compatible with most processes, and has high signal-to-noise and high photosensitive power.

The subject of the invention is a compound, an organic light emitting diode comprising the compound, a use of the diode, and a consumer product. The compound can be a compound according to Formula I. Furthermore, the organic light emitting diode (OLED) comprising an anode, cathode, and organic emissive layer, disposed between the anode and cathode, wherein the organic emissive layer includes the compound according to Formula I. The invention also encloses hyper-fluorescence diode (HF-OLED), wherein the emissive layer comprises a fluorescent dopant - N7,N7,N13,N13,5,9,11,15-octaphenyl-5,9,11,15-tetrahydro-5,9,11,15-tetraaza-19b,20b-diboradinaphtho[3,2,1-de:1',2',3'-jk]pentacene-7,13-diamine (v-DABNA) as a final emitter to improve the colour purity in pure emission region. The invention belongs to the field of light-emitting diodes / devices.