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15 results about "Semiconducting polymer" patented technology

Water-swellable semiconducting tape

A water-swellable semiconducting material is provided, comprising a semiconducting layer and a semiconducting water-swellable polymer layer on which the semiconducting layer is arranged. The semiconducting water-swellable polymer layer consists of conductive particles dispersed in a crosslinked superabsorbent polymer matrix. This material can be formed into tapes or other structures for insulating and protecting cables. The water-swellable semiconducting material can be applied to cables or other conductive materials to insulate them and protect the cables from water ingress.
Owner:MATIV LUXEMBOURG

Improved method for manufacturing a medium- or high-voltage electric cable

The invention relates to a method for manufacturing a medium- or high-voltage electric cable, of the type comprising:a core formed of an elongate electrically conductive element and of an insulating system comprising at least one layer comprising at least one cross-linked polyethylene, said at least one layer being arranged coaxially around the elongate electrically conductive element, anda tape enveloping the corethe tape being formed of a semiconductor polymer material.,characterised in that the method comprises at least one step of extracting at least one chemical species from the tape, said chemical species being a chemical species able to reach the insulating system by migration from the tape and to decrease the dielectric performance of the insulating system.
Owner:NEXANS SA

Graft copolymer compatibilizer containing semiconductor and elastomer fragments and preparation, separation and application thereof

PendingCN121378766AElastomerEndcapping
The invention discloses a graft copolymer compatibilizer containing a semiconducting polymer and an elastomer fragment, and preparation, separation and application of the graft copolymer compatibilizer. The structural formula of the compatilizer is shown in the formula 1. According to the invention, a metal coupling reaction (Stille reaction or Suzuki reaction) is utilized to seal the end of a semiconductor polymer, and then the semiconductor polymer is grafted to an elastomer flexible segment to prepare a grafted copolymer compatibilizer containing semiconductor and elastomer segments, and the grafted copolymer compatibilizer is directly blended with a semiconductor material under the condition of not adding the elastomer segments, so that the p-type performance of the material can be inhibited, and the service life of the material is prolonged. Meanwhile, the n-type performance and the tensile property of the material are improved. Based on a'compatibility 'and'mixing' strategy, the problem of collaborative improvement of electrical and mechanical properties is solved. The strategy is designed and regulated according to the material microstructure and intermolecular interaction, electrical and mechanical properties are closely combined and unified, and a foundation is built for application of flexible electronic devices.
Owner:BEIJING UNIV OF CHEM TECH

Preparation of ultra-small nano probe with efficient biomarker performance and super-resolution imaging application of ultra-small nano probe

The invention provides preparation of an ultra-small nano probe with efficient biomarker performance and super-resolution imaging application of the ultra-small nano probe. The nanodot is of a core-shell structure, and the core-shell structure comprises a fluorescent core, a fluorescent layer and a fluorescent layer, wherein the fluorescent core is composed of a single-chain semiconductor polymer; the shell layer is composed of an amphiphilic compound, a hydrophobic part of the amphiphilic compound is combined with the semiconductor polymer, a hydrophilic group is located on the surface of the shell layer to serve as an active group, the average particle size of the nanodot is smaller than 5 nm, and the nanodot is of a glassy structure. The nanodot can realize high-density specific marking of various subcellular organelles and nano-scale biological fluorescence imaging.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

An activatable semiconductor polymer, its preparation method and application

ActiveCN119661858BEfficient accumulationAccurate imagingEnergy modified materialsFluorescence/phosphorescenceCathepsin BEpidermal Dendritic Cells
This invention provides an activatable semiconductor polymer, its preparation method, and its applications. The activatable semiconductor polymer of this invention can efficiently accumulate at tumor sites. Due to the presence of electron-withdrawing groups on its side chains, the polymer's fluorescence is quenched. Upon response to tumor markers—biothiols, reactive oxygen species, and cathepsin B—the polymer's fluorescence recovers, enabling precise imaging and sonodynamic therapy at the tumor site. Simultaneously, the activatable semiconductor polymer of this invention can label immune cells (such as dendritic cells and macrophages) and track their metastasis from the tumor to the draining lymph nodes.
Owner:TAN KAH KEE INNOVATION LAB +1

Modified organic semiconductor material, composite film, preparation method, application and organic electrochemical transistor

The invention relates to the field of organic electrochemical transistors (OECT), in particular to a modified organic semiconductor material, a composite film, a preparation method, application and an organic electrochemical transistor, and the preparation method of the modified organic semiconductor material comprises the following steps: carrying out gradient thermal polymerization modification treatment on a semiconductor polymer material and a modifier in a formula 1 (1), the modified organic semiconductor material is prepared; the gradient thermal polymerization modification treatment comprises a low-temperature heat preservation polymerization process and a high-temperature heat preservation polymerization process; wherein the temperature in the low-temperature heat preservation polymerization process is 100-150 DEG C; the temperature in the high-temperature insulation polymerization process is 200-280 DEG C. According to the material prepared by the method and the constructed film, the optimal balance is achieved between the mechanical flexibility and the volume stability, the Young modulus is remarkably reduced, and swelling and stress concentration caused by ion embedding are effectively relieved; therefore, the operation stability and the service life of the organic electrochemical transistor in long-time electrochemical circulation and air environment are remarkably improved, and meanwhile, the basic electrical performance of a device is not influenced.
Owner:HUNAN UNIV

Stretchable semiconductor film with biocompatibility and bio-implantable electronic device using the same

PendingUS20260136747A1Other rubber coatingsNanofiberThin membrane
Disclosed are a stretchable semiconductor film having biocompatibility and an electronic device using the same. The stretchable semiconductor film having biocompatibility of the present disclosure includes a biocompatible elastomer matrix; and a semiconducting polymer of an interconnected semiconductor nanofiber network embedded in the elastomer matrix, wherein the semiconducting polymer of the interconnected semiconductor nanofiber network embedded in the elastomer matrix provides stretchability. The electronic device using the stretchable semiconductor film having biocompatibility of the present disclosure is characterized by using a bilayer electrode composed of gold and silver, providing excellent corrosion resistance in vivo.
Owner:UNIVERSITY INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY +1

Stretchable electronic materials and devices

Devices and methods relating to stretchable electronics. A stretchable electronic film includes an insulating polymer and less than 1 wt % of a semiconducting polymer. Manufacturing a multi-layered, stretchable electronic device characterized by a single peel-off step for integrating the components of the device rather than a multi-peel synthesis of the device.
Owner:GEORGIA TECH RES CORP

High-environmental-stability n-type semiconductor polymer composite material and preparation method thereof

PendingCN121517744AHigh electronHigh temperature electronics
The invention discloses an n-type semiconductor polymer composite material with high environmental stability and a preparation method thereof. The method comprises the following steps: mixing a PBFDO solution with an ionic micromolecule additive solution to form a uniform precursor solution, forming a film from the precursor solution, and performing thermal annealing treatment in a nitrogen environment to obtain the PBFDO composite material. The PBFDO composite material disclosed by the invention has excellent environmental stability, thermal stability and high electronic conductivity, and can meet the strict requirements of organic thermoelectric and high-temperature electronic devices and the like on material stability.
Owner:NANJING UNIV OF SCI & TECH

An all-polymer elastic transistor and a preparation method thereof

This application relates to the field of semiconductor fabrication technology and discloses an all-polymer elastic transistor and its fabrication method. The all-polymer elastic transistor includes an elastic substrate layer, a functional layer disposed on the elastic substrate layer, and a top protective layer disposed on the functional layer. The functional layer includes a source, a drain, a gate, a semiconductor layer, and a composite dielectric layer located between the semiconductor layer and the gate. The source and drain have an interdigitated structure. The source, drain, and gate are all made of a photolithographically patternable conductive composite material. The semiconductor layer is made of a photolithographically patternable semiconductor polymer composition. The composite dielectric layer is made of a photolithographically patternable polymer layer. Its advantages are that it realizes an all-polymer elastic transistor with high-resolution patterning, excellent mechanical elasticity, high electrical performance, and high structural stability.
Owner:PURPLE MOUNTAIN LAB

A stretchable organic phototransistor based on stable bulk heterojunction and a preparation method thereof

PendingCN122318459AHeterojunctionElectron donor
This invention discloses a stretchable organic phototransistor based on a stable bulk heterojunction and its fabrication method. The transistor has a bottom-gate-top-contact top electrode structure and, from bottom to top, comprises a stretchable substrate, a stretchable gate electrode, a stretchable insulating layer, a stretchable organic active layer, coplanar stretchable source / drain electrodes, and a stretchable encapsulation layer. This invention uses a mixture of semiconductor polymers and elastomer polymers as the stretchable electron donor and highly photosensitive organic small molecules as the electron acceptor. An organic heterojunction is formed through solution blending to serve as the stretchable organic active layer. All functional layers are fabricated using stretchable materials, and the device is assembled using a thermal bonding transfer method. This phototransistor achieves a balance between stretchability and photoelectric performance, exhibiting not only high carrier mobility and high photoresponse sensitivity but also maintaining stable photoelectric performance under high mechanical stretching deformation.
Owner:QINGDAO UNIV OF SCI & TECH

A gradient-doped semiconductor polymer thin film, a preparation method and application thereof

The present application relates to a kind of gradient doped semiconductor polymer film and its preparation method and application, belong to organic thermoelectric material field.The gradient doped semiconductor polymer film includes semiconductor polymer film, and the dopant attached on all regions of the semiconductor polymer film;The doping degree of the dopant in each region of semiconductor polymer film overall presents ladder change, and the ladder change includes the gradient change of single dopant content formed on semiconductor polymer film or the gradient change of dopant kind.
Owner:SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI

A ratiometric fluorescent probe and a preparation method and application thereof

The present application relates to the technical field of fluorescent probe, in particular to a ratio fluorescent probe and its preparation method and application. The ratio fluorescent probe is prepared from isothiocyanate dye modified semiconductor polymer quantum dots, and has strong fluorescence emission peaks at 530 nm and 581 nm, respectively. The isothiocyanate dye is rhodamine B isothiocyanate, the semiconductor polymer quantum dots are composed of polystyrene maleic anhydride copolymer and poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazole-4,8-diyl)], and the particle size of the ratio fluorescent probe is 10-200 nm. The detection limit of the ratio fluorescent probe for tyramine is 1.023 μM, which is lower than the allowable limit of tyramine residue, and meets the detection requirements of freshness and safety of aquatic products. The ratio fluorescent probe can be used for real-time / onsite visual quantitative detection of tyramine, and makes the detection process portable, fast and low-cost.
Owner:SHANGHAI OCEAN UNIV

Four-mode polymer photoelectric detector with adjustable polarization sensitivity and response spectrum and manufacturing method thereof

The invention discloses a polarization sensitivity and response spectrum adjustable four-mode polymer photoelectric detector and a manufacturing method thereof, and relates to the technical field of organic photoelectric detectors, the polarization sensitivity and response spectrum adjustable four-mode polymer photoelectric detector comprises a substrate made of an inorganic or polymer insulating material which can be formed into a sheet; the bottom electrode is arranged on the substrate, and the bottom electrode is made of an inorganic substance or a doped high polymer material which is highly transparent in a visible light region; the body layer is arranged on the bottom electrode, and the body layer is a P-type semiconductor polymer film with the thickness ranging from 0.8 m to 8 m; the orientation layer is arranged on the body layer, and the orientation layer is a P-type semiconductor polymer film with the thickness of 50-400 nm; the two ends of the detector are provided with the transparent or semitransparent electrode films, light can enter the active layer from the two ends, the detector has four independent light response modes through regulation and control of voltage polarity and the light incidence direction, and the structure of the detector has wide application value in the aspect of simplifying a polymer photoelectric detection system.
Owner:CHAOHU UNIV

Ultra-small-size high-brightness nano probe and single protein tracking application thereof

The invention provides an ultra-small-size high-brightness nanoprobe and a single protein tracking application thereof, the nanodot is of a core-shell structure, and the core-shell structure comprises: a fluorescent core, which is formed by a single-chain semiconductor polymer; the shell layer is formed by an amphiphilic compound, a hydrophobic part of the amphiphilic compound is combined with the semiconductor polymer, a hydrophilic group is located on the surface of the shell layer to serve as an active group, and the average particle size of the nanodot is smaller than 5 nm. The single-chain ultra-small polymer point provided by the invention can realize high temporal-spatial resolution tracking of a single motor protein in a living cell, and can accurately analyze the motion step length of about 16 nm.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI