280 results about "Semiconducting polymer" patented technology

Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO2, as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semiconducting materials including semiconducting metals and metal oxides (such as TiO2, CdSe, CdS, CdTe, or CuO) may be deposited into the pores of the porous template film. After deposition, the template film may be removed by controlled exposure to acid or base without disrupting the semiconducting material leaving behind a nanoscale network grid. Spaces in the network grid can then be filled with complementary semiconducting material, e.g., a semiconducting polymer or dye to create a exciton-splitting and charge transporting network with superior optoelectronic properties for an optoelectronic devices, particularly photovoltaic devices.

A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films

The invention relates to formulations comprising one or more polymers with semiconducting, charge transport, photoconducting and / or photo- or electroluminescent properties and one or more organic solvents, to their use for the preparation of electrooptical or electronic devices, including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, in particular by ink-jet printing, and to FETs and other semiconducting or light emitting components or devices comprising the formulations.

Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramids, polyacrylamides, polystyrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.

A photovoltaic wire is presented where the active layers coat a metallic wire, preferably aluminum. The active layers are an array of doped silicon nanowires electrically attached to the metallic wire that extend from the surface of the wire into a layer of semiconducting polymer, preferably polyaniline. The surface of the polymer is coated with a transparent conductor to complete the photovoltaic circuit.

The invention relates to formulations comprising one or more polymers with semiconducting, charge transport, photoconducting and / or photo- or electroluminescent properties and one or more organic solvents, to their use for the preparation of electrooptical or electronic devices, including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, in particular by ink-jet printing, and to FETs and other semiconducting or light emitting components or devices comprising the formulations.

A method for the manufacturing of a Thin Film Inorganic Light Emitting Diode is disclosed. The device contains in one single layer or in a double layer a dispersion of zinc sulfide doped with a luminescent centre, and a water-compatible p-type semiconductive polymer, preferably a polythiophene / polymeric polyanion complex.

Novel Semiconducting photovoltaic polymers with conjugated units that provide improved solar conversion efficiency that can be used in electro-optical and electric devices. The polymers exhibit increased solar conversion efficiency in solar devices.

There is provided a transparent conductor including conductive nanoparticles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer. The nanoparticles are carbon nanoparticles, metal nanoparticles, or combinations thereof. The carbon and metal nanoparticles are selected from nanotubes, fullerenes, and nanofibers. The acid polymers are fluorinated or highly fluorinated and have acidic groups including carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The semiconductive polymers comprise homopolymers and copolymers derived from monomers selected from substituted and unsubstituted thiophenes, pyrroles, anilines, and cyclic heteroaromatics, and combinations of those. The compositions may be used in organic electronic devices (OLEDs).

Compositions comprising a polyolefin polymer and an expanded graphite exhibit uniform conductivity over a broad range of temperature. In one embodiment, the polyolefin polymer is polypropylene or polyethylene homopolymer or a polypropylene or polyethylene copolymer. The compositions provide uniform conductivity and can be used as a conductive formulation for medium and high voltage cable components.

Methods are disclosed for improving organic thin-film transistor (OTFT) performance by acid doping of the semiconducting layer. The semiconducting polymer comprising the semiconductor layer is doped with an acid, especially a Lewis acid, either during or after polymerization of the polymer, but prior to application of the polymer onto the OTFT. Also disclosed are OTFTs having enhanced charge carrier mobility produced by these methods.

The present invention provides a method for enhancing electrical characteristics of organic electronic devices, especially for an organic thin-film transistors, comprising the steps of: providing a substrate with a gate and an insulator layer formed thereon; preparing an organic solution by mixing materials of an organic semiconductor polymer, an organic insulator polymer, a conducting particle and a solvent; forming an organic semiconductor layer on top of the insulator layer between the source and the drain using the organic solvent. Wherein, the organic semiconductor polymer can be a polymer selected from the group consisting of poly(3-alkylthiophene) (P3AT) with different alkyl side groups of 2, 4, 6, 8, 10, 12, and 18, as the P3HT is a P3AT with alkyl side group of 6, and the organic insulator polymer can be a polymer selected from the group consisting of poly(methylmethacrylate) (PMMA), and polybutylene terephthalate (PBT), etc. and the conducting particle can be a kind of particle selected from the group consisting of carbon nanotubes (CNTs), C60, and nano silver particle, and so on, and the solvent can be a solvent selected from the group consisting of xylene, toluene, and THF, and so forth.

A method for the manufacturing of a Thin Film Inorganic Light Emitting Diode is disclosed. The device contains in one single layer or in a double layer a dispersion of zinc sulfide doped with a luminescent center, and a water-compatible p-type semiconductive polymer, preferably a polythiophene / polymeric polyanion complex.

A polymer-based field effect transistor photosensitive to incident light, which may enhance the transistor's characteristics and controlling parameters of the transistor state. The transistor is comprised of a metal-insulator-semiconductor structure with the insulating and semiconducting layers made of a polymeric media. The semiconducting polymer which also is photoconducting, forms the charge transport layer between the source and drain. The transistor exhibits large photosensitivity indicated by the sizable changes in the drain-source current, by a factor of 100–1000 even at low levels of light with illumination of approximately 1 mlux. The photosensitivity of the transistor is further enhanced with introduction of dilute quantity electron acceptor moieties in the semiconducting polymer matrix. Several applications of the light-responsive polymer-transistor are disclosed, such as use as a logic element and as a backbone of an image sensor.

Functional composite materials comprise elemental inorganic particles within an organic matrix. The elemental inorganic materials generally comprise elemental metal, elemental metalloid, alloys thereof, or mixtures thereof. In alternative or additional embodiments, the inorganic particles can comprise a metal oxide, a metalloid oxide, a combination thereof or a mixture thereof. The inorganic particles can have an average primary particle size of no more than abut 250 nm and a secondary particle size in a dispersion when blended with the organic matrix of no more than about 2 microns. The particles can be substantially unagglomerated within the composite. The organic binder can be a functional polymer such as a semiconducting polymer. The inorganic particles can be surface modified, such as with a moiety having an aromatic functional group for desirable interactions with a semiconducting polymer. Appropriate solution based methods can be used for forming the composite from dispersions of the particles. The composites can be processed into products, such as printed electronics devices.

A photovoltaic cell which comprises a first electrode, a second electrode, a photoactive, charge-separating layer comprising a semiconducting polymer between the first and the second electrodes, and a passivatng layer adapted to enhance the lifetime of the photovoltaic cell. The passivating layer comprises a substantially amorphous titanium oxide having the formula of TiOx where x represents a number from 1 to 1.96.

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

A thin film transistor having a semiconducting layer with improved flexibility and / or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

Novel Semiconducting photovoltaic polymers with conjugated units that provide improved solar conversion efficiency that can be used in electro-optical and electric devices. The polymers exhibit increased solar conversion efficiency in solar devices.

Systems and methods are provided to improve the performance of electronic and optoelectronic devices made using organic semiconductor processing technology. An ink-jet device dispenses an organic composite mixture onto a substrate. The mixture includes a semiconducting polymer and nanomaterials dispersed into an organic solvent. The type of solvent used preferably achieves effective dispersion of the polymer and nanomaterials in the solvent to minimize the occurrence of clogging of the ink-jet nozzles. The range of nanomaterials include, but are not limited to, organic and inorganic, single or multi-walled nanotubes, nanowires, nanodots, quantum dots, nanorods, nanocrystals, nanotetrapods, nanotripods, nanobipods, nanoparticles, nanosaws, nanosprings, nanoribbons, any branched nanostructure, and any mixture of these nanoshaped materials. The nanostructures can be aligned on the substrate to improve the carrier mobility in the organic semiconductors.

Compositions, synthesis and applications for benzene, furan, thiophene, selenophene, pyrole, pyran, pyridine, oxazole, thiazole and imidazole derivatized anthra[2,3-b:6,7-b′]dithiophene (ADT) based polymers, namely, poly{5,11-bis(5-(2-ethylhexyl)thiophen-2-yl)anthra[2,3-b:6,7-b′]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl}, poly{5,11-bis(5-(2-ethylhexyl)furan-2-yl)anthra[2,3-b:6,7-b′]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl and poly{5,11-bis(5-(2-ethylhexyl)selenophen-2-yl)anthra[2,3-b:6,7-b′]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl} are disclosed. Further, an organic solar cell constructed of a derivatized anthra[2,3-b:6,7-b′]dithiophene (ADT) based polymer is discussed.

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation preventer. The oxidation preventers may contain at least one of 1) an oxygen scavenger, 2) a polymer with oxidizable side-chain groups which can be preferentially oxidized over the carrier ions / electrodes, and 3) an oxidizable molecule that can be preferentially oxidized over the carrier ions / electrodes.

The invention relates to a semiconductor conjugated polymer and a preparation method thereof. The invention discloses a solution-processable polymer semiconductor material and particularly relates to a semiconductor conjugated polymer based on two-dimensional conjugated dibenzothiophene and (2-oxyindole-3-subunit)dibenzofuran-diketone and preparation thereof. The synthesized semiconductor conjugated polymer has wide absorption peak which covers visible light, even extends to a near infrared region; in addition, the synthesized semiconductor conjugated polymer has low lowest unoccupied molecular orbital (LUMO) energy level and can replace fullerene derivative (PCBM) to serve as a photovoltaic receptor material applied to the organic photovoltaic field. The introduced side chain serves as a solubilized alkyl chain. The semiconductor conjugated polymer prepared by the method can be subjected to solution processing, and has a certain application prospect in the organic photovoltaic field.

A π-conjugated organic material for detecting ionizing radiation, and particularly for detecting low energy fission neutrons. The π-conjugated materials comprise a class of organic materials whose members are intrinsic semiconducting materials. Included in this class are π-conjugated polymers, polyaromatic hydrocarbon molecules, and quinolates. Because of their high resistivities (≧109 ohm·cm), these π-conjugated organic materials exhibit very low leakage currents. A device for detecting and measuring ionizing radiation can be made by applying an electric field to a layer of the π-conjugated polymer material to measure electron / hole pair formation. A layer of the π-conjugated polymer material can be made by conventional polymer fabrication methods and can be cast into sheets capable of covering large areas. These sheets of polymer radiation detector material can be deposited between flexible electrodes and rolled up to form a radiation detector occupying a small volume but having a large surface area. The semiconducting polymer material can be easily fabricated in layers about 10 μm to 100 μm thick. These thin polymer layers and their associated electrodes can be stacked to form unique multi-layer detector arrangements that occupy small volume.

An electric article, particularly an electric cable or an accessory thereof, such as a cable joint or a cable termination, includes at least one element made from a semiconductive polymeric material, wherein the at least one element is obtained by crosslinking a semiconductive polymeric composition including: (a) at least one elastomeric polymer; (b) a filler mixture including: (i) at least one first carbon black having a dibutyl phthalate (DBP) absorption number of from 250 to 600 ml / 100 g; (ii) at least one second carbon black, different from the first one, having a dibutyl phthalate (DBP) absorption number of from 80 to 250 ml / 100 g; and (c) at least one graphite having a specific surface area, measured according to the BET method, not higher than 20 m2 / g.

The invention provides an organic semiconducting polymer and a solar battery comprising the same. The organic semiconducting polymer has a structure as shown in a chemical formula (1).