286results about "Measurement with semiconductor devices" patented technology

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as 10B or 6LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel length. Material layers that may include energy conversion materials and conductive materials are coaxially disposed within the pore channels to form material rods having a relatively small cross-section and a relatively long length. By varying the structure of the materials in the pore channels, various energy devices can be fabricated, such as photovoltaic (PV) devices, radiation detectors, capacitors, batteries and the like.

Described is a radiation dosimeter including multiple sensor devices (including one or more passive integrating electronic radiation sensor, a MEMS accelerometers, a wireless transmitters and, optionally, a GPS, a thermistor, or other chemical, biological or EMF sensors) and a computer program for the simultaneous detection and wireless transmission of ionizing radiation, motion and global position for use in occupational and environmental dosimetry. The described dosimeter utilizes new processes and algorithms to create a self-contained, passive, integrating dosimeter. Furthermore, disclosed embodiments provide the use of MEMS and nanotechnology manufacturing techniques to encapsulate individual ionizing radiation sensor elements within a radiation attenuating material that provides a “filtration bubble” around the sensor element, the use of multiple attenuating materials (filters) around multiple sensor elements, and the use of a software algorithm to discriminate between different types of ionizing radiation and different radiation energy.

An assembly for detecting radiation is described. The assembly includes a host matrix with particles suspended within the host matrix. The particles are capable of generating a charge carrier upon interaction with the radiation. A first electrode is disposed adjacent to a first surface of the host matrix, and a second electrode disposed adjacent to a second surface of the host matrix. A power source operatively connects to one of the first or second electrodes. The power source establishes an electric field between the first and second electrodes such that a ratio of a mobility-lifetime-field strength product of the charge carrier to the thickness of the host matrix is greater than or equal to 0.1. A radiation detector and a method for detecting radiation are also described.

A low-cost device for the detection of thermal neutrons. Thin layers of a material chosen for high absorption of neutrons with a corresponding release of ionizing particles are stacked in a multi-layer structure interleaved with thin layers of hydrogenated amorphous silicon PIN diodes. Some of the neutrons passing into the stack are absorbed in the neutron absorbing material producing neutron reactions with the release of high energy ionizing particles. These high-energy ionizing particles pass out of the neutron absorbing layers into the PIN diode layers creating electron-hole pairs in the intrinsic (I) layers of the diode layers; the electrons and holes are detected by the PIN diodes.

A solid-state detector for detection of neutron and alpha particles detector and methods for manufacturing and use thereof are described. The detector has an active region formed of a polycrystalline semiconductor compound comprising a particulate semiconductor material sensitive to neutron and alpha particles radiation imbedded in a binder. The particulate semiconductor material contains at least one element sensitive to neutron and alpha particles radiation, selected from a group including 10Boron, 6Lithium, 113Cadmium, 157Gadolinium and 199Mercury. The semiconductor compound is sandwiched between an electrode assembly configured to detect the neutron and alpha particles interacting with the bulk of the active region. The binder can be either an organic polymer binder or inorganic binder. The organic polymer binder comprises at least one polymer that can be selected from the group comprising polystyrene, polypropylene, Humiseal™ and Nylon-6. The inorganic binder can be selected from B2O3, PbO / B2O3 / , Bi2O3 / PbO, Borax glass, Bismuth Borate glass and Boron Oxide based glass.

A tool for measuring formation properties in situ. The tool includes a solid state neutron detector and a neutron source disposed on a drill string or wireline. The detector includes a boron carbon surface deposited on a substrate, and the surface can be multi-planar or curved for allowing sensitivity in more than one direction.

A broad spectrum neutron detector has a thermal neutron sensitive scintillator film interleaved with a hydrogenous thermalizing media. The neutron detector has negligible sensitivity to gamma rays and produces a strong and unambiguous signal for virtually all neutrons that interact with the hydrogenous volume. The interleaving of the layers of thermal neutron sensitive phosphors helps ensure that all parts of the thermalizing volume are highly sensitive.

A radiation, explosives, and special materials, detection and identification system includes a housing supporting one or more gamma sensors and one or more solid-state neutron sensors proximate to container contents under examination. The system collects radiation data from the sensors and compares the collected data to one or more stored spectral images representing one or more isotopes to identify one or more isotopes present. The identified one or more isotopes present are corresponded to possible materials or goods that they represent. The possible materials or goods are compared with the manifest relating to the container to confirm the identity of materials or goods contained in the container or to detect and / or identify unauthorized materials or goods in the container. A battery powered sensor arrangement is also disclosed.

A radiation, explosives, and special materials, detection and identification system includes a housing supporting one or more gamma sensors and one or more solid-state neutron sensors proximate to container contents under examination. The system collects radiation data from the sensors and compares the collected data to one or more stored spectral images representing one or more isotopes to identify one or more isotopes present. The identified one or more isotopes present are corresponded to possible materials or goods that they represent. The possible materials or goods are compared with the manifest relating to the container to confirm the identity of materials or goods contained in the container or to detect and / or identify unauthorized materials or goods in the container. A battery powered sensor arrangement is also disclosed.

A semiconductor substrate incorporating a neutron conversion layer (such as boron-10) that is sensitive enough to permit the counting of single neutron events. The substrate includes an active semiconductor device layer, a base substrate, an insulating layer provided between the active semiconductor device layer and the base substrate, and a neutron conversion layer provided between the active semiconductor device layer and the base substrate. The neutron conversion layer is located within the insulating layer, between the insulating layer and the base substrate or between the active semiconductive device layer and the insulating layer. A barrier layer is provided between at least one of the neutron conversion layer and the active semiconductor device layer and the neutron conversion layer and the base substrate to prevent diffusion of the neutron conversion material provided in the neutron conversion layer. Further, a plurality of trenches may be formed in the active semiconductor device layer. In such a case, a trench neutron conversion layer is formed in at least one of the trenches to improve device sensitivity.

A neutron detector utilizing a sol-gel absorber incorporating a fissionable material and an activation disk. Preferably utilizing Li-6 and B-10 as fissionable material and Ag-109 as activation disk material for increased sensitivity and better differentiation of thermal versus prompt neutrons and neutrons versus other radiation fragments.

Dual modality detection devices and methods are provided for detecting nuclear material, the devices include a neutron detector including multiple neutron detection modules; and a gamma detector including multiple gamma detection modules, where the multiple neutron detection modules and the multiple gamma detection modules are integrated together in a single unit to detect simultaneously both gamma rays and neutrons.

A neutron imaging apparatus for obtaining an image of the general shape of a neutron emitting source and a bearing of the source relative to the apparatus, the apparatus comprising a chamber comprising a gas with a high probability of interacting with low energy neutrons, releasing collision products that maintain the neutron momentum, and generating ionization particles. The chamber comprises an electrode for providing an electronic signal indicative of the impact location of ionization particles on the electrode and a field to drift the ionization particles to the electrode. A readout indicates the location and time of impact of each ionization particle on the electrode; a memory stores a plurality of the electronic signals; and a computer receives and analyzes the signals and impact times and indicates the location of the source of neutrons by using back projection algorithms to calculate three-dimensional vectors indicative of the neutron path directions.

A solid-state thermal neutron detector comprises: a layered structure that includes; an electrically insulating substrate; a first electrode affixed to the substrate; a neutron-reactive layer affixed to and in ohmic contact with the first electrode; and a second electrode affixed to and in ohmic contact with the neutron-reactive layer; a voltage source electrically coupled to the first and second electrodes; and an electrical current detector electrically coupled in series between the layered structure and the voltage source.

A multi-stage process utilizing one or more radiation sensors on a distributed network for the detection and identification of radiation, explosives, and special materials within a shipping container. The sensors are configured as nodes on the network. The system collects radiation data from one or more nodes and compares the collected data to one or more stored spectral images representing one or more isotopes to identify one or more isotopes present. The identified one or more isotopes present are corresponded to possible materials or goods that they represent. The possible materials or goods are compared with the manifest relating to the container to confirm the identity of materials or goods contained in the container or to detect and / or identify unauthorized materials or goods in the container. For shielded materials, explosives and other types of material detection, a neutron pulse device could be incorporated into the system.

A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and / or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.

Semiconductor-based elements as an electrical signal generation media are utilized for the detection of neutrons. Such elements can be synthesized and used in the form of, for example, semiconductor dots, wires or pillars in the form of semiconductor substrates embedded in matrixes of high cross-section neutron converter materials that can emit charged particles upon interaction with neutrons. These charged particles in turn can generate electron-hole pairs and thus detectable electrical current and voltage in the semiconductor elements. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

A neutron detector, and method for fabricating same, having an active layer comprised of organic and inorganic materials such as polymers and / or small molecules. These materials function as a semiconductor host matrix that transports carriers excited by neutron absorption. The active layer is comprised of host semiconductor materials, composites of the host semiconductor materials with other polymers molecules, and particles, or multi-layer structures of the host semiconductor materials with other materials. The host semiconductor materials include in their molecular structure neutron capturing atoms such as 10B, 6Li, 157Gd, 235U, 239Pu, 51V, and 103Rh, or alternatively are blended with molecules or particles that contain the above atoms in addition to electron accepting molecules or particles. Using these materials allows for the simplified fabrication of inexpensive, large area, relatively lightweight, and flexible neutron detectors via film casting from solution, thermal evaporation, inkjet printing, and film laminate, or film extrusion.

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy α-particles or γ-photons generated by neutron interaction.

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

A system and method detecting fissile material. According to one embodiment, a detector includes an array of active pixel sensors wherein each active pixel sensor operable to integrate a charge generated by radiation that is incident upon the active pixel sensor by using a charge-sensing element during an integration phase. Then, a voltage signal is generated that is based upon the integrated charge intensity during a readout phase. After reading out the voltage signal during the readout phase, the active pixel sensor is reset ready to integrate again. The integration phase is typically set to a time interval that is optimal for detecting radiation from fissile material, and the system is typically able to count individual events occurring in an integration period, and to digitally sum these event counts to measure rate of radiation events.

The present invention provides methods and apparatuses for detecting neurons, that provide high sensitivity, low cost, durability, portability, and scalability. Neutrons interacting with a 10B layer in the present invention result in expression of alpha particles from the 10B layer. The alpha particles can then be detected, for example with a silicon photodetector or an imaging array (e.g., arrays used in digital cameras).

A nuclear tool includes a tool housing; a neutron generator disposed in the tool housing; and a solid-state neutron monitor disposed proximate the neutron generator for monitoring the output of the neutron generator. A method for constructing a nuclear tool includes disposing a neutron generator in a tool housing; and disposing a solid-state neutron monitor proximate the neutron generator for monitoring the output of the neutron generator. A method for logging a formation includes disposing a nuclear tool in a wellbore penetrating the formation, wherein the nuclear tool comprises a neutron generator and a solid-state neutron monitor disposed proximate the neutron generator; generating neutrons from the neutron generator; monitoring neutrons generated by the neutron generator using the solid-state neutron monitor; detecting signals generated from the neutrons traveling in the formation; and correcting the detected signals, based on signal strength detected by the solid-state neutron monitor, to produce corrected signals.

Micro neutron detectors include relatively small pockets of gas including a neutron reactive material. During use, under a voltage bias in a neutron environment, neutron interactions in the neutron reactive material are seen to occur. Ultimately, electron-ion pairs form and positive ions drift to a cathode and electrons to the anode. The motion of charges then produces an induced current that is sensed and measurable, thereby indicating the presence of neutrons. Preferred pocket volumes range from a few cubic microns to about 1200 mm3; neutron reactive materials include fissionable, fertile or fissile material (or combinations), such as 235U, 238U, 233U, 232Th, 239Pu, 10B, 6Li and 6LiF; gasses include one or more of argon, P-10, 3He, BF3, BF3, CO2, Xe, C4H10, CH4, C2H6, CF4, C3H8, dimethyl ether, C3H6 and C3H8. Arrangements include two- and three-piece sections, arrays (including or not triads capable of performing multiple detecting functions) and / or capillary channels.

A neutron detection device (100) includes a semiconductor substrate including a gallium arsenide substrate region (102) having a back surface, and a high purity gallium arsenide active region (104) having a front surface. A back contact layer (118) is disposed on the back surface for providing a first voltage potential at the back surface. A plurality of elongated tube cavities extend from a plurality of respective openings in the front surface into the high purity gallium arsenide active region (104) and almost through, but not totally through, the high purity gallium arsenide active region (104). A front contact layer is disposed on the front surface for providing a second voltage potential at the front surface. Neutron reactive material, e.g., pulverized Boron-10 powder, fills the plurality of elongated tube cavities to a high packing density. A radiation detection system and a method of fabricating the neutron detection device are also disclosed.

A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Neutron-detecting structures and methods of fabrication are provided which include: a substrate with a plurality of cavities extending into the substrate from a surface; a p-n junction within the substrate and extending, at least in part, in spaced opposing relation to inner cavity walls of the substrate defining the plurality of cavities; and a neutron-responsive material disposed within the plurality of cavities. The neutron-responsive material is responsive to neutrons absorbed for releasing ionization radiation products, and the p-n junction within the substrate spaced in opposing relation to and extending, at least in part, along the inner cavity walls of the substrate reduces leakage current of the neutron-detecting structure.