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2results about "Measurement with semiconductor devices" patented technology

Annular grooved silicon carbide neutron detector

PendingCN122239118AMeasurement with semiconductor devicesCarbide siliconMechanical engineering
This invention discloses a ring-shaped trench silicon carbide neutron detector, comprising an array of ring-shaped trenches etched on the top surface of a substrate. The ring-shaped trench array includes a first ring-shaped trench and a second ring-shaped trench. The second ring-shaped trench is spaced around the periphery of the first ring-shaped trench. The first and second ring-shaped trenches are concentrically arranged with reference to the center point of the top surface of the substrate. The first and second ring-shaped trenches have the same width, and the trench spacing between the first and second ring-shaped trenches is the same as the distance of the second ring-shaped trench from the boundary of the top surface of the substrate. Both the first and second ring-shaped trenches are filled with neutron conversion material. This invention, through the construction of the ring-shaped trench array, increases the filling area of ​​the neutron conversion material and the contact area with the substrate region, thereby reducing the self-absorption effect of secondary particles and significantly improving the detection efficiency of the detector.
Owner:DALIAN MARITIME UNIVERSITY

Logging-while-drilling apparatus based on muon imaging

ActiveCN120522801BSurveyMeasurement with semiconductor devicesInsulation layerPhotovoltaic detectors
The present application belongs to the field of geological exploration, and discloses a device for logging while drilling based on muon imaging technology; the device comprises an outer shell, an inner cylinder and a muon detector, wherein the inner cylinder is coaxially nested in the outer shell, and a relatively sealed detection space is formed between the inner cylinder and the outer shell; the muon detector is arranged in the detection space; the muon detector comprises a scintillator assembly coaxially sleeved and arranged in the detection space and a photodetector arranged on the inner side of the scintillator assembly, wherein the scintillator assembly is made of a scintillator material resistant to high temperature above 140 DEG C, and the inner wall of the detection space is provided with a heat insulation layer. The present application can be widely applied to oil and gas exploration, mineral resources investigation and underground structure detection, and can improve the detection depth and imaging accuracy of logging while drilling.
Owner:INST OF ROCK & SOIL MECHANICS CHINESE ACAD OF SCI