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19results about "Measurement with semiconductor devices" patented technology

Method and apparatus for monitoring neutron ambient dose equivalent in a wide energy region

ActiveCN121385966BMeasurement with semiconductor devicesNeutron doseRadiation resistant
This invention relates to the field of neutron dose monitoring, specifically to a method and apparatus for monitoring the dose equivalent around neutrons over a wide energy range. The apparatus includes an outer moderator, a thermal neutron absorbing layer, a high-energy neutron compensation layer, and an inner moderator. The high-energy neutron compensation layer is composed of a heavy metal material capable of undergoing a significant neutron multiplication reaction with ultra-high-energy neutrons. The thermal neutron detector is a radiation-resistant solid-state semiconductor detector, comprising a silicon carbide semiconductor substrate and an enrichment layer closely adhering to its surface. 6 The device is equipped with a lithium fluoride thermal neutron converter; an initial thermal neutron detector group is deployed within the device to collect thermal neutron fluence information under different slowing degrees; based on the initial thermal neutron detector group, position optimization and weight coefficient output are performed, and multiple groups of thermal neutron detectors in the first depth order are selected to make the total dose response flat in a wide energy range for dose equivalent monitoring.
Owner:NANJING UNIV OF AERONAUTICS & ASTRONAUTICS

Method and system for dose quantification

A radiation dose quantification method and system, the method comprising: detecting, with one or more detectors with respective sensitive volumes, gamma-rays emitted as a result of capture of neutrons by a composition in a subject subjected to an irradiation program, the composition comprising one or more thermal neutron capture agents, the neutrons having been generated by non-elastic collisions between a primary beam of particles and nuclei in the subject, wherein the particles consist of any one or more of protons, deuterons, tritons and heavy ions, the irradiation program comprises at least one period of irradiation with a beam duration that includes beam-on periods and beam-off periods; applying at least one predefined energy window or filter configured to accept only detection events in the one or more detectors resulting from gamma-rays with an energy indicative of selected gamma-rays arising from the capture of thermal neutrons by the one or more thermal neutron capture agents, wherein the thermal neutrons are neutrons with energies below approximately 0.4 eV; applying a timing window configured to reject or ignore detection events in the one or more detectors resulting from at least prompt gamma-rays produced in non-neutron capture events; and determining the radiation dose of neutron radiation received by the subject during the irradiation program from at least the accepted detection events or determining a dose map of the radiation received by the subject from at least the accepted detection events.
Owner:AUSTRALIAN NUCLEAR SCI & TECH ORGANISATION

Monitoring device and experimental device for neutron poison layer of spent fuel bearing device

PendingCN121595592AMeasurement with semiconductor devicesNuclear energy generationNuclear engineeringNeutron poison
The invention discloses a monitoring device and an experimental device for a neutron poison layer in a spent fuel bearing device, and relates to the technical field of nuclear chemical engineering, the monitoring device comprises a first support and a second support, the bottoms of the first support and the second support are respectively provided with a moving device, and the first support and the second support are arranged in parallel at an interval; the radiation device is connected to the first support, the radiation end of the radiation device faces the second support, and the radiation end is provided with a first moderation layer; the detection device is connected to the second support, the detection device is provided with a second moderation layer, and a plurality of detectors are sequentially inserted into the second moderation layer. According to the technical scheme, the radiation device and the detection device are supported through the first support and the second support respectively, the radiation device and the detection device can move relatively through the moving device, and the monitoring device can flexibly monitor neutron poison layers at different positions of the spent fuel bearing device.
Owner:CHINA NUCLEAR POWER ENGINEERING CO LTD

Neutron beam detecting device, neutron beam detecting method, and neutron beam detecting program

ActiveCN115552288BWide detection rangelow priceMeasurement with semiconductor devicesMeasurement by spectrometryNuclear engineeringElectrical battery
The neutron beam detection device of the present application is provided with: a first solar cell type detector, which has a conversion film attached to its surface that converts neutrons into any one of a charged particle beam of a photon, an alpha particle, a proton, a lithium nucleus, a gamma ray, and a beta ray, and generates a current by incident radiation; a radiation detector that generates a current having no sensitivity to neutrons as an output signal due to radiation incident; a current measurer that detects the current generated by the first solar cell type detector and the current generated by the radiation detector due to radiation incident as signals; and a flux calculation section that compares the current signals from the detector detected by the current measurer. The flux calculation section corresponds the detected current signals from the solar cell type detector and the radiation detector to a relationship between the flux of a prescribed kind of incident radiation and the detected current from the solar cell type detector and the radiation detector, which is obtained in advance, and calculates the flux of the neutron beam.
Owner:TOHOKU UNIV

Semiconductor neutron detectors

PendingEP4493962A4Measurement with semiconductor devicesSemiconductor devices
A neutron detector for detecting neutrons with energies from meV to tens of MeV comprising one or more nitride (BN) strips electrically connected in parallel or series. In some embodiments, the two or more BN strips are stacked on one another. In other embodiments, the two or more BN strips are disposed on a substrate with a gap between the two or more BN strips.
Owner:TEXAS TECH UNIV SYST

A hybrid radiation measuring device and a neutron dose measurement method

ActiveCN121028180BMeasurement with semiconductor devicesNuclear energy generation
A hybrid radiation measurement device and a neutron dose measurement method are disclosed. The hybrid radiation measurement device includes a housing and an inner core. The housing surface includes a window; a cadmium filter is placed on the window; the inner core includes a solid track detection element and a thermoluminescent element group; when the inner core is disposed within the housing, the thermoluminescent element group is located below the window, and the solid track detection element is offset from the area where the window is located; the thermoluminescent element group includes at least one incident thermoluminescent element and at least one albedo thermoluminescent element. The hybrid radiation measurement device of this application can measure both photons and neutrons.
Owner:CHINA INST FOR RADIATION PROTECTION

Radiation detector

ActiveJP7857112B2Measurement with semiconductor devicesX/gamma/cosmic radiation measurment
To provide a technology that is advantageous in improving the cooling performance of a detector that detects radioactive rays and enhancing the sensitivity or the resolution of the detector.SOLUTION: A detector includes: a first member that detects a radioactive ray; a second member located around the first member; a third member having a first opening overlapping at least a part of a first region on which the first member is projected in a planar view including the first member and the second member; a fourth member having a second opening overlapping at least a part of the first region in the planar view and having higher thermal conductivity than the third member; and a penetration part provided in a third region overlapping the fourth member outside a second region on which the second member is projected in the planar view, connected to the fourth member, connected to the second member via a thermal conductive member, and having higher thermal conductivity than the third member.SELECTED DRAWING: Figure 1B
Owner:CANON KK

Online single-sphere neutron gamma-ray spectrum detector and detection system

PendingCN121831856AX-ray spectral distribution measurementMeasurement with semiconductor devicesNuclear engineeringGamma energy
The invention relates to an online single-sphere neutron gamma-ray spectrum detector and a detection system. Wherein the detector comprises a spherical moderation body and a plurality of detectors; the plurality of detectors are arranged on the spherical moderator, the distances from the plurality of detectors to the sphere center of the spherical moderator are different, the plurality of detectors are arranged at the same depth from the sphere center of the spherical moderator, and the plurality of detectors at least comprise a CLYC detector. According to the invention, the plurality of detectors are arranged in the same spherical moderator, and the plurality of detectors are arranged at positions with different distances from the sphere center of the spherical moderator, so that large-range energy detection can be realized, the size is small, the weight is light, and carrying is convenient; moreover, the device comprises a CLYC detector, so that the device has the capability of detecting neutrons and gamma information at the same time.
Owner:CHINA INST FOR RADIATION PROTECTION

X-ray semiconductor detector and method for producing same

PCT designated stageWO2026070781A1Measurement with semiconductor devicesSemiconductor detectorMaterials science
An X-ray semiconductor detector (2) comprises a first i-type nitride semiconductor substrate (10), a second i-type nitride semiconductor substrate (15), a p-type semiconductor layer (20), an n-type semiconductor layer (22), a first electrode (25), and a second electrode (26). The first i-type nitride semiconductor substrate (10) includes a first gallium surface (11). The second i-type nitride semiconductor substrate includes a second gallium surface (17). The p-type semiconductor layer (20) is formed on the first gallium surface. The n-type semiconductor layer (22) is formed on the second gallium surface. The first electrode (25) is formed on the p-type semiconductor layer (20). The second electrode (26) is formed on the n-type semiconductor layer (22).
Owner:MICROSYST +1

Annular grooved silicon carbide neutron detector

PendingCN122239118AMeasurement with semiconductor devicesCarbide siliconMechanical engineering
This invention discloses a ring-shaped trench silicon carbide neutron detector, comprising an array of ring-shaped trenches etched on the top surface of a substrate. The ring-shaped trench array includes a first ring-shaped trench and a second ring-shaped trench. The second ring-shaped trench is spaced around the periphery of the first ring-shaped trench. The first and second ring-shaped trenches are concentrically arranged with reference to the center point of the top surface of the substrate. The first and second ring-shaped trenches have the same width, and the trench spacing between the first and second ring-shaped trenches is the same as the distance of the second ring-shaped trench from the boundary of the top surface of the substrate. Both the first and second ring-shaped trenches are filled with neutron conversion material. This invention, through the construction of the ring-shaped trench array, increases the filling area of ​​the neutron conversion material and the contact area with the substrate region, thereby reducing the self-absorption effect of secondary particles and significantly improving the detection efficiency of the detector.
Owner:DALIAN MARITIME UNIVERSITY

Neutron pulse signal acquisition and counting device and method

PendingCN121763347AMeasurement with semiconductor devicesLow noiseNuclear engineering
The invention relates to the technical field of signal processing of neutron detectors, in particular to a neutron pulse signal collecting and counting device and method. According to the technical scheme, the neutron detector comprises a front signal source, a low-noise signal amplifier, an analog-to-digital conversion module and a signal collecting and processing unit, and the front signal source adopts a microstructure semiconductor neutron detector and is used for receiving neutron radiation and generating charge pulse signals; and the low-noise signal amplifier is connected with the front signal source and is used for amplifying the charge pulse signal. A set of complete neutron signal acquisition and processing system is constructed by integrating a microstructure semiconductor neutron detector, a three-stage low-noise amplification circuit, a high-speed analog-to-digital conversion module based on double-ADC alternate sampling and a self-adaptive digital processing algorithm, so that high sensitivity, low-noise amplification and high-speed sampling are realized, and the detection accuracy is improved. The method has excellent pulse identification precision and real-time energy spectrum reconstruction capability.
Owner:INST OF ENERGY HEFEI COMPREHENSIVE NAT SCI CENT (ANHUI ENERGY LAB)

Lithium-doped plastic neutron multiplicity counter and systems and methods thereof

PCT designated stageWO2026076212A1Measurement with semiconductor devicesMeasurement with scintillation detectorsNuclear engineeringNeutron multiplicity
The present disclosure relates to a modular, lithium-doped, solid state, organic neutron multiplicity counter apparatus. In some embodiments the apparatus makes use of at least one lithium-doped, solid state, organic scintillator detector element. A readout device is included which is coupled to the lithium-doped, solid state, organic scintillator detector element for collecting information received by the lithium-doped, solid state, organic scintillator detector element. The lithium-doped neutron multiplicity counter apparatus is sensitive to thermal neutrons, fast neutrons and gamma-rays for carrying out neutron multiplicity counting.
Owner:LAWRENCE LIVERMORE NAT SECURITY LLC

A SiC-based neutron detection system for radiation-resistant reactor cores

ActiveCN116978595BGuaranteed uptimeSolve signal interferenceMeasurement with semiconductor devicesNuclear energy generation
This invention discloses a SiC-based neutron detection system for a radiation-resistant reactor core, comprising a detection device, a wireless communication device, and an industrial control computer. The wireless communication device includes a transmitter module, an antenna module, and a receiver module. The transmitter communicates wirelessly with the receiver through the antenna module, which includes a millimeter-wave transmitting antenna array and a receiving antenna array. The transmitter module converts logic-level pulse train signals into microwave signals and outputs the microwave signals to the millimeter-wave transmitting antenna array. The millimeter-wave transmitting antenna array outputs corresponding millimeter-wave signals that penetrate the reactor core wall and reach the receiving antenna array. The receiver module receives the penetrating signals through the receiving antenna array, amplifies, filters, detects, and shapes them, and then outputs them to the industrial control computer for processing and display. The neutron detection system provided by this invention ensures that the wireless communication device can operate stably for extended periods under high radiation fields, essentially overcoming the signal interference problem of wireless communication technology.
Owner:SUZHOU NUCLEAR POWER RES INST CO LTD +2

Online single-sphere neutron spectrometer based on thermal neutron detector

PendingCN121831861Aquick responseguaranteed responseMeasurement with semiconductor devicesNuclear engineeringHigh energy
The invention relates to an online single-sphere neutron spectrometer based on a thermal neutron detector. The online single-sphere neutron spectrometer comprises a spherical moderator, a detector and a metal layer, the number of the detectors is multiple, the multiple detectors are distributed at the positions, away from the sphere center by different depths, in the spherical moderator and at the sphere center of the spherical moderator, and the multiple detectors are arranged at the same depth. The metal layer is of a spherical shell structure, is concentric with the spherical moderator, and is located between the detectors with different depths. According to the invention, based on the arrangement of a plurality of detectors in the same moderator, the neutron detection in different energy ranges can be completed at one time, the structure is simple, the use is convenient, and the angle response is low; the metal layers are arranged between the detector layers with different depths, so that the response to high-energy neutrons can be improved, the detection energy range can be expanded, the response to neutrons in a low-energy region can be ensured, and the neutron radiation protection device can be suitable for neutron radiation protection in the fields of medical treatment and nuclear power and in the field of universe science and technology spaceflight.
Owner:CHINA INST FOR RADIATION PROTECTION

Logging-while-drilling apparatus based on muon imaging

ActiveCN120522801BSurveyMeasurement with semiconductor devicesInsulation layerPhotovoltaic detectors
The present application belongs to the field of geological exploration, and discloses a device for logging while drilling based on muon imaging technology; the device comprises an outer shell, an inner cylinder and a muon detector, wherein the inner cylinder is coaxially nested in the outer shell, and a relatively sealed detection space is formed between the inner cylinder and the outer shell; the muon detector is arranged in the detection space; the muon detector comprises a scintillator assembly coaxially sleeved and arranged in the detection space and a photodetector arranged on the inner side of the scintillator assembly, wherein the scintillator assembly is made of a scintillator material resistant to high temperature above 140 DEG C, and the inner wall of the detection space is provided with a heat insulation layer. The present application can be widely applied to oil and gas exploration, mineral resources investigation and underground structure detection, and can improve the detection depth and imaging accuracy of logging while drilling.
Owner:INST OF ROCK & SOIL MECHANICS CHINESE ACAD OF SCI

Radiation detection systems and methods

ActiveUS12618988B1Measurement with semiconductor devicesRadiation intensity measurementGate stackDielectric layer
A method of forming a radiation detector includes forming a stack including a plurality of arrays of radiation detection devices. Forming an array of the plurality of arrays includes forming a polysilicon layer over an interlayer dielectric layer of another array of the plurality of arrays; forming charge storage layers over the polysilicon layer; forming a second polysilicon layer over the charge storage layers; etching the second polysilicon layer to form gate stacks; and depositing an interlayer dielectric disposed on at least three sides of the gate stacks, the interlayer dielectric including a radiation reactive material.
Owner:CERIUM LABORATORIES LLC

Neutron detection element

ActiveJP7843499B2Measurement with semiconductor devices
This neutron detection element (100) is provided with: a neutron detection part which detects a neutron and converts the neutron into an electrical signal; and an amplifier part which amplifies the output of the neutron detection part. The neutron detection part comprises: a semiconductor layer of a first conductivity type; a detection part diffusion layer of a second conductivity type, said detection part diffusion layer being formed in the semiconductor layer; and a neutron conversion layer which is formed on the detection part diffusion layer and convers a neutron into an α-ray. The amplifier part comprises a plurality of transistors that are formed in the semiconductor layer. The neutron conversion layer is a metal film that has a layer containing boron 10 or a layer containing lithium 6.
Owner:HIROSHIMA UNIVERSITY

A neutron sensitive microchannel plate, a neutron detector and a method of manufacturing the same

ActiveCN121439664BMeasurement with semiconductor devicesMutiple dynode arrangementsNuclear engineeringElectron multiplication
The application discloses a neutron-sensitive micro-channel plate, a neutron detector and a manufacturing method thereof, and belongs to the technical field of neutron detectors. The neutron-sensitive micro-channel plate comprises a glass substrate, a plurality of micro-channels penetrating through the thickness direction of the glass substrate are formed on the glass substrate, the micro-channels are in a conical hole structure, the aperture of the inlet end of the micro-channels is smaller than the aperture of the outlet end, and the opening rate of the inlet end is lower than the opening rate of the outlet end; a secondary electron multiplication functional layer is formed in the inner wall of the micro-channels; the secondary electron multiplication functional layer comprises a resistance layer and 10 a B2O3 secondary electron emission layer, the resistance layer is in contact with the inner wall of the micro-channels, 10 the B2O3 secondary electron emission layer is covered above the resistance layer, 10 the B2O3 secondary electron emission layer has the dual effects of secondary electron emission and electron multiplication; and electrode layers are formed on the upper and lower surfaces of the glass substrate, so that the neutron-sensitive micro-channel plate breaks through the contradiction between the opening rate and the detection efficiency of a conventional micro-channel plate and improves the detection efficiency.
Owner:XIAN INST OF OPTICS & PRECISION MECHANICS CHINESE ACAD OF SCI

Fast neutron detector

PendingCN121596346AMeasurement with semiconductor devicesNuclear engineeringIon implantation
The embodiment of the invention provides a fast neutron detector. The detector comprises an N-type substrate and a P region. Wherein the upper end of the N-type substrate comprises an inclined table top, and the P region is formed by performing ion implantation on the inclined table top; the P region comprises a P + region and a terminal region, the P + region is located on the upper end face of the inclined table top, and the terminal region extends from the side face of the inclined table top to the non-table top region of the N-type substrate.
Owner:MEISHAN BOYA ADVANCED MATERIALS CO LTD