255results about How to "Increase charge mobility" patented technology

Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

A semiconductor device and method for forming the same for improving charge mobility in NMOS and PMOS devices simultaneously, the method including forming a first dielectric layer including a stress type selected from the group consisting of tensile stress and compressive stress over the respective PMOS and NMOS device regions; removing a portion of the first dielectric layer overlying one of the PMOS and NMOS device regions; forming a second dielectric layer including a stress type opposite from the first dielectric layer stress type over the respective PMOS and NMOS device regions; and, removing a portion of the second dielectric layer overlying one of the PMOS and NMOS device regions having an underlying first dielectric layer to form a compressive stress dielectric layer over the PMOS device region and a tensile stress dielectric layer over the NMOS device region.

Polymers with low band gaps and high charge mobility, as well as related systems, methods and components are disclosed.

Polymers with low band gaps and high charge mobility, as well as related systems, methods and components are disclosed.

An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high I_on/I_off, and it can be prepared by a wet process.

Polymers with low band gaps and high charge mobility, as well as related systems, methods and components are disclosed.

A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.

The invention discloses a polycyclic benzothiadiazole non-fullerene acceptor material, a preparation method thereof and an application of the material. The polycyclic benzothiadiazole non-fullerene acceptor material comprises a polycyclic benzothiadiazole center core and electrophilic end groups, the polycyclic benzothiadiazole center core is of a nitrogen bridge trapezoidal polycyclic structure,the electrophilic end groups are connected to two ends of the center core, 4, 7-dibromo-5, 6-binitro benzothiadiazole serves as a raw material in the preparation process, Stille coupling and Vilsmeier-Haack reaction are sequentially performed to obtain the polycyclic benzothiadiazole center core, and end-group structures are introduced by Knoevenagel reaction to obtain the polycyclic benzothiadiazole non-fullerene acceptor material. The acceptor material is good in solubility and easily processed into a film, has a good photoelectric conversion function and is used for preparing an organic solar battery device, and photoelectric conversion efficiency reaches nearly 16% of single battery conversion efficiency.

A shallow trench isolation (STI) structure and method of forming the same with reduced stress to improve charge mobility the method including providing a semiconductor substrate comprising at least one patterned hardmask layer overlying the semiconductor substrate; dry etching a trench in the semiconductor substrate according to the at least one patterned hardmask layer; forming one or more liner layers to line the trench selected from the group consisting of silicon dioxide, silicon nitride, and silicon oxynitride; forming one or more layers of trench filling material comprising silicon dioxide to backfill the trench; carrying out at least one thermal annealing step to relax accumulated stress in the trench filling material; carrying out at least one of a CMP and dry etch process to remove excess trench filling material above the trench level; and, removing the at least one patterned hardmask layer.

An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.

A method for the production of an inorganic film on a substrate, the method comprising: (a) depositing a layer of nanoparticles on the substrate by contacting the substrate with a nanoparticle dispersion; (b) treating the deposited layer of nanoparticles to prevent removal of the nanoparticles in subsequent layer depositing steps; (c) depositing a further layer of nanoparticles onto the preceding nanoparticle layer on the substrate; (d) repeating treatment step (b) and deposition step (c) at least one further time; and (e) optionally thermally annealing the multilayer film produced following steps (a) to (d); wherein the method comprises at least one thermal annealing step in which the layer or layers of nanoparticles are thermally annealed.

An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.

Disclosed is a method of fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes, and an organic semiconductor layer, in which the surface of the metal oxide source/drain electrodes or of the metal oxide source/drain electrodes and gate insulating layer is treated with a self assembled monolayer-forming compound containing a dichlorophosphoryl group. According to the method of example embodiments, the work function of the metal oxide of the source/drain electrodes may be increased to be higher than that with no SAM-forming electrode, thus making it possible to fabricate an improved organic thin film transistor having increased charge mobility.

Variable liquid crystal devices for controlling the propagation of light through a liquid crystal layer use a frequency dependent material to dynamically reconfigure effective electrode structures in the device. The frequency of a drive signal that generates an electric field in the device may be varied, and the frequency dependent material has different charge mobilities for the different frequencies. At a low charge mobility, the frequency dependent material has little effect on the existing electrode structures. However, at a high charge mobility, the frequency dependent material appears as an extension of the fixed electrodes, and may be used to change the effective electrode structure and, thereby, the spatial profile of the electric field. This, in turn, changes the optical properties of the liquid crystal, thus allowing the optical device to be frequency controllable.

Methods are disclosed for improving organic thin-film transistor (OTFT) performance by acid doping of the semiconducting layer. The semiconducting polymer comprising the semiconductor layer is doped with an acid, especially a Lewis acid, either during or after polymerization of the polymer, but prior to application of the polymer onto the OTFT. Also disclosed are OTFTs having enhanced charge carrier mobility produced by these methods.

Variable liquid crystal devices for controlling the propagation of light through a liquid crystal layer use a frequency dependent material to dynamically reconfigure effective electrode structures in the device. The frequency of a drive signal that generates an electric field in the device can be varied, and the frequency dependent material has different charge mobilities for the different frequencies. At a low charge mobility, the frequency dependent material has little effect on the existing electrode structures. However, at a high charge mobility, the frequency dependent material appears as an extension of the fixed electrodes, and can be used to change the effective electrode structure and, thereby, the spatial profile of the electric field. This, in turn, changes the optical properties of the liquid crystal, thus allowing the optical device to be frequency controllable.