Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices

Abstract

An oxide semiconductor device includes a gate electrode on a substrate, a gate insulation layer on the substrate, the gate insulation layer having a recess structure over the gate electrode, a source electrode on a first portion of the gate insulation layer, a drain electrode on a second portion of the gate insulation layer, and an active pattern on the source electrode and the drain electrode, the active pattern filling the recess structure.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application claims priority under 35 USC §119 to Korean Patent Application No. 2011-46116 filed on May 17, 2011 in the Korean Intellectual Property Office (KIPO), the contents of which are herein incorporated by reference in their entirety.BACKGROUND[0002]1. Field[0003]Embodiment of the present invention relate to oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, and methods of manufacturing display devices including oxide semiconductor devices. More particularly, embodiments relate to oxide semiconductor devices including gate insulation layers having recess structures, methods of manufacturing the oxide semiconductor devices including the gate insulation layers having the recess structures, display devices including the oxide semiconductor devices, and methods of manufacturing display devices having the oxide semiconductor devices.[0004]2. Descripti...

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Benefits of technology

[0040]According to example embodiments of the present invention, the recess structure may be provided on the gate insulation layer between the source and drain electrodes by performing at least one of the plasma treatment and the cleaning treatment, so that an internal stress generated in forming the source and drain electrodes may be removed from the gate insulation layer. Additionally, a portion of the gate insulation layer damaged by the etching process and etching by-products including metal compounds and / or metallic particles may be effectively removed from the gate insulation layer. Therefore, a channel region of the oxide semiconductor device may be uniformly formed in the active pattern filling the recess structure on the gate insulation layer, such that the oxide semiconductor device may have enhanced electrical characteristics such as an improved operation current, an increased charge mobility, an decreased threshold voltage variation, etc. Furthermore, the charge mobility and the operation current of the oxide semiconductor device may be further enhanced because the gate insulation layer may have a small thickness reduced by the recess structure. When the oxide semiconductor device is employed in a display device such as an organic light emitting display device, a liquid crystal display device or a flexible display device, the display device may have various advantages, for example, a reduced thickness, an increased operation speed, an enhanced quality of displayed images, etc.

Problems solved by technology

When an active layer is formed on a gate insulation layer having internal stress, voltage-current characteristics of the transistor may be deteriorated.

Additionally, etching damage is easily generated on a surface of the gate insulation layer while patterning the metal layer for forming the source and drain electrodes.

Furthermore, the gate insulation layer is frequently contaminated by etching such as metal compounds and metallic particles generated in an etching process for the metal layer.

Thus, an interface between the active layer and the gate insulation layer may be irregular, thereby deteriorating electrical characteristics of the transistor.

For example, the transistor may have poor electrical characteristics such as increased variation of threshold voltages (Vth), decreased charge mobility, reduced operation current (Ion), etc.

When an oxide semiconductor device includes a gate insulation layer having an internal stress, etching damage, and / or etching by-products remaining thereon, the oxide semiconductor device may have deteriorated electrical characteristics, such that the oxide semiconductor devices having the deteriorated electrical characteristics may not be suitable for use in display devices such as a liquid crystal display (LCD) device or an organic light emitting display (OLED) device.

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