294 results about "Nanodot" patented technology

A method of forming silicon nitride nanodots that comprises the steps of forming silicon nanodots and then nitriding the silicon nanodots by exposing them to a nitrogen containing gas. Silicon nanodots were formed by low pressure chemical vapor deposition. Nitriding of the silicon nanodots was performed by exposing them to nitrogen radicals formed in a microwave radical generator, using N₂ as the source gas.

An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

Due to the indirect transition characteristic of silicon semiconductors, the light extraction efficiency of a silicon-based light emitting diode is lower than that of a compound semiconductor-based light emitting diode. For this reason, there are difficulties in practically using and commercializing silicon-based light emitting diodes developed so far. Provided is a silicon-based light emitting including: a substrate with a lower electrode layer on a lower surface thereof; a lower doped layer that is formed on an upper surface of the substrate and supplies carriers to an emitting layer; the emitting layer that is a silicon semiconductor layer including silicon quantum dots or nanodots formed on the lower doped layer and has a light-emitting characteristic; an upper doped layer that is formed on the emitting layer and supplies carriers to the emitting layer; an upper electrode layer formed on the upper doped layer; and a surface structure including a surface pattern formed on the upper electrode layer, a surface structure including an upper electrode pattern and an upper doped pattern formed by patterning the upper electrode layer and the upper doped layer, or a surface structure including the surface pattern, the upper electrode pattern, and upper doped pattern, wherein the surface structure enhances the light extraction efficiency of light emitted from the emitting layer according to geometric optics.

A nanodot electroluminescent diode is disclosed. The nanodot electroluminescent diode comprises a lower electrode, an upper electrode, and unit cells interposed between the electrodes, wherein the unit cells comprise a quantum dot electroluminescent layer and also include an organic layer and/or an inorganic layer in addition to the quantum dot electroluminescent layer. The disclosed nanodot electroluminescent diode provides high efficiency, stability, and high luminance, and mixed colors, multi-colors, full color, and white electroluminescence can be obtained.

A method of adsorbing mercury includes the use of silver nanodots formed on chabazite as a sorbent. The silver nanodots may be formed on chabazite by ion-exchange followed by activation.

Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example embodiments, the current paths inside the oxide layer may be unified, thereby stabilizing the reset current.

The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.

The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.

A method of fabricating memory with nano dots includes sequentially depositing a first insulating layer, a charge storage layer, a sacrificial layer, and a metal layer on a substrate in which source and drain electrodes are formed, forming a plurality of holes on the resultant structure by anodizing the metal layer and oxidizing portions of the sacrificial layer that are exposed through the holes, patterning the charge storage layer to have nano dots by removing the oxidized metal layer, and etching the sacrificial layer and the charge storage layer using the oxidized sacrificial layer as a mask, and removing the oxidized sacrificial layer, depositing a second insulating layer and a gate electrode on the patterned charge storage layer, and patterning the first insulating layer, the patterned charge storage layer, the second insulating layer, and the gate electrode to a predetermined shape, for forming memory having uniformly distributed nano-scale storage nodes.

A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality of nanodots on the silicon oxide layer.

The invention provides a preparation method for carbon dots. The preparation method comprises the steps: mixing citric acid and urea in a solvent, and then, carrying out heating, so as to obtain a reaction solution; and carrying out centrifugal separation on the reaction solution, so as to obtain precipitates, i.e., the carbon dots, wherein the solvent is one or a mixture of two of water, glycerine and dimethylformamide. According to method, visible-light-all-waveband-luminescent carbon dots are prepared through adopting different solvents, and thus, the carbon-dot composite material provided by the invention can emit light in all wave band of visible light, particularly, white-light carbon-dot composite materials of different color coordinates and color temperatures can be obtained by adopting the carbon dots of different colors. Furthermore, the carbon-dot composite material provided by the invention employs silicon dioxide as a dispersion matrix, so that gathered induced fluorescence quenching can be inhibited, and the composite material has relatively high quantum efficiency. The invention further provides the preparation method for the carbon dots, the carbon-dot composite material, a preparation method therefor and a luminescent LED (Light Emitting Diode).

Provided are a method of forming nano dots, method of fabricating a memory device including the same, charge trap layer including the nano dots and memory device including the same. The method of forming the nano dots may include forming cores, coating surfaces of the cores with a polymer, and forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. Also, the cores may be removed after forming the graphene layers. In addition, the surfaces of the cores may be coated with a graphitization catalyst material before coating the cores with the polymer. Also, the cores may include metal particles that trap charges and may also function as a graphitization catalyst.

Described herein is a method and system for providing a countermeasure against laser detection systems using nanocomponent material that is tailored to cloak or obscure a target from detection by transmitted laser radiation. The nanodot material absorbs and/or down-converts the transmitted laser radiation. Similarly, described herein is a method and system for providing a countermeasure against laser systems intended to blind a target through the use of a specifically engineered nanocomponent material for absorbing and/or down-converting the radiation from the laser system.

The invention belongs to the technical of low-temperature Atomic Layer Deposition (ALD), and particularly relates to a flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and a manufacturing method thereof. The method comprises the steps: at first, growing a bottom electrode on a flexible substrate by using a low temperature PVD (Physical Vapor Deposition) method, then growing an oxide layer through a low temperature ALD method; growing nanodots and then growing another oxide layer through the low temperature ALD method;and finally growing a top electrode. The nanodots accessed to the oxide layer can effectively improve the stability of high/low resistant state transformation of the RRAM and reduce the occurrence possibility of errors, thereby solving the problems regarding reliability and practicability. The method can be applied to the manufacturing of flexible low-temperature memory in the future, and change the packaging and existing manner of the memory at present, enables the folding and bending of portable memories to be possible.

Systems and methods are provided to improve the performance of electronic and optoelectronic devices made using organic semiconductor processing technology. An ink-jet device dispenses an organic composite mixture onto a substrate. The mixture includes a semiconducting polymer and nanomaterials dispersed into an organic solvent. The type of solvent used preferably achieves effective dispersion of the polymer and nanomaterials in the solvent to minimize the occurrence of clogging of the ink-jet nozzles. The range of nanomaterials include, but are not limited to, organic and inorganic, single or multi-walled nanotubes, nanowires, nanodots, quantum dots, nanorods, nanocrystals, nanotetrapods, nanotripods, nanobipods, nanoparticles, nanosaws, nanosprings, nanoribbons, any branched nanostructure, and any mixture of these nanoshaped materials. The nanostructures can be aligned on the substrate to improve the carrier mobility in the organic semiconductors.

Described herein are methods directed to the use of the nanodot taggants in detection and/or simulation scenarios. The nanodot taggants are based on quantum dots and may be engineered so as to have particular emission and or absorbance spectral characteristics. The nanodots are extremely small, i.e., on the order of nanometers in size, and thus do not, in some cases, behave as particles, but rather are able to be carried along and through structures like a gas.

Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be uniformly disposed in the nanowires, and nanowires having various physical properties can be produced by controlling the size and interval of the nanodots. Therefore, the nanowires can be effectively used in a variety of applications, including electronic devices, such as field effect transistors (FETs), sensors, photodetectors, light emitting diodes (LEDs), and laser diodes (LDs).

Memory cells formed to include a charge storage node having conductive nanodots over a charge storage material are useful in non-volatile memory devices and electronic systems.

A quantum nanodot camera, comprising: a quantum nanodot camera sensor including: at least one visible pixel sensor configured to capture scenes including actors and/or objects in a visible band; and at least one IR pixel sensor configured to capture motions of at least one quantum nanodot (QD) marker tuned to emit a narrowband IR signal.