The application discloses a growth method of a strain cooperative regulation Ge / GaInAs epitaxial structure, and the epitaxial structure comprises, from bottom to top, a GaInP
nucleation layer, a GaInAs matching buffer layer, a bottom
tunnel junction n-GaAs / p-AlGaAs, an AlGaInAs lattice buffer layer, a self-assembled Ga
nanodot array, a target GaInAs matching buffer layer, a target GaInAs layer, an AlInP window layer and a GaInAs cap layer on a
germanium substrate. 0.1 As matching buffer layer, bottom
tunnel junction n-GaAs / p-AlGaAs, Al k Ga 1‑x In x As lattice buffer layer, self-assembled Ga
nanodot array, Al k Ga 1‑y In y As target matching buffer layer, Ga 1‑y In y As target layer, Al 1‑z In z P window layer and Ga 1‑y In y As cap layer. The application combines defect
engineering of self-assembled nanodots and atom-level smooth growth of migration enhanced
epitaxy, reconstructs an epitaxial starting interface on a nanometer scale, forms a triple
system of a
nucleation layer, a lattice buffer layer and a
nanodot array, and realizes three-dimensional and multi-scale inhibition of dislocations and point defects.