Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof

A technology of resistive variable memory and manufacturing method, applied in the direction of electrical components, etc., can solve the problems of not being widely used, error, poor stability of single oxide RRAM storage performance, etc., and achieve reliability and practicability, guarantee Stability, the effect of improving stability

Inactive Publication Date: 2011-06-15
FUDAN UNIV
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  • Abstract
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Problems solved by technology

However, the stability of single oxide RRAM storage performance is not good, and the probability of error is relatively high
[0004] Research on biological nanodots is currently in its infancy and has not been widely used

Method used

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  • Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof
  • Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof
  • Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof

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Embodiment Construction

[0029] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are enlarged or reduced for convenience of description, and the shown sizes do not represent actual sizes. The representations in the referenced figures are schematic, but this should not be considered as limiting the scope of the invention. Meanwhile, in the following description, the term substrate used can be understood to include the semiconductor substrate being processed, possibly including other thin film layers prepared thereon.

[0030] figure 2 A cross-sectional view of an embodiment of a flexible nano-dot RRAM provided by the present invention, such as figure 2 As shown, the flexible nano-dot RRAM is formed on a flexible substrate 201 , including a bottom electrode 202 , a resistance switching memory layer 210 and a top electrode 206 . The substrate 201 is preferably polyeth...

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Abstract

The invention belongs to the technical of low-temperature Atomic Layer Deposition (ALD), and particularly relates to a flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and a manufacturing method thereof. The method comprises the steps: at first, growing a bottom electrode on a flexible substrate by using a low temperature PVD (Physical Vapor Deposition) method, then growing an oxide layer through a low temperature ALD method; growing nanodots and then growing another oxide layer through the low temperature ALD method;and finally growing a top electrode. The nanodots accessed to the oxide layer can effectively improve the stability of high/low resistant state transformation of the RRAM and reduce the occurrence possibility of errors, thereby solving the problems regarding reliability and practicability. The method can be applied to the manufacturing of flexible low-temperature memory in the future, and change the packaging and existing manner of the memory at present, enables the folding and bending of portable memories to be possible.

Description

technical field [0001] The invention belongs to the technical field of low-temperature atomic layer deposition (ALD), and in particular relates to a resistive variable memory (RRAM) and a manufacturing method thereof, in particular to a flexible nano-dot RRAM based on an all-low temperature process and a manufacturing method thereof. Background technique [0002] Flexible storage devices can be used in the manufacture of future non-volatile storage devices. Due to their very high cost performance, they are expected to replace the current hard storage devices based on silicon in the future and reduce the price of mobile storage devices on the market. Because flexible memory is easier to fold and bend, it is more convenient to carry and has a wider range of existence, and even storage devices can be manufactured on the surface of any soft object. Since the substrates used in most flexible memories are flexible plastics, and the heat resistance of general plastics is below 100°...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 房润晨孙清清王鹏飞张卫
Owner FUDAN UNIV
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