Flexible nanodot resistive random access memory (RRAM) based on all low-temperature process and manufacturing method thereof
A technology of resistive variable memory and manufacturing method, applied in the direction of electrical components, etc., can solve the problems of not being widely used, error, poor stability of single oxide RRAM storage performance, etc., and achieve reliability and practicability, guarantee Stability, the effect of improving stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0029] An exemplary embodiment of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are enlarged or reduced for convenience of description, and the shown sizes do not represent actual sizes. The representations in the referenced figures are schematic, but this should not be considered as limiting the scope of the invention. Meanwhile, in the following description, the term substrate used can be understood to include the semiconductor substrate being processed, possibly including other thin film layers prepared thereon.
[0030] figure 2 A cross-sectional view of an embodiment of a flexible nano-dot RRAM provided by the present invention, such as figure 2 As shown, the flexible nano-dot RRAM is formed on a flexible substrate 201 , including a bottom electrode 202 , a resistance switching memory layer 210 and a top electrode 206 . The substrate 201 is preferably polyeth...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com