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131results about How to "Increased charge storage capacity" patented technology

Multilayer electret nano-fiber filtering material and preparation method thereof

ActiveCN107441827AIncrease spinning speedSolve problems such as easy blockageSynthetic fibresElectro-spinningFiberSpinning
The invention relates to a multilayer electret nanofiber filtering material and a preparation method thereof. The invention adopted the technical scheme is as follows: through an electric-field stepped increasing/reducing technology, utilizing a combined needle head for electrostatic spinning to realize deposition of spinning polymer solution on a receiving substrate to obtain nanofiber, carrying out slight dissolving treatment on the surface of a nanofiber layer by a certain release rate by adopting a recovery solvent steam, wherein the nanofiber layer is uniformly filled with electret materials and the diameter of the nanofiber layer is distributed in a stepped-increasing or stepped-reducing manner along the direction vertical to the breadth. According to the multilayer electret nano-fiber filtering material, the electret charge stability is extremely high, the surface electrostatic potential is 250-7000V, simultaneously the filtering performance is excellent, the filtering efficiency for 0.03-10 microns particulates is more than 99.997%, the resistance pressure drop is less than or equal to 39Pa, the service life is long, and the development and application prospect in the aspect of filtering materials for air purifiers, window gauzes, masks and filtering papers and the like are wide.
Owner:DONGHUA UNIV

Preparation method of electret polylactic acid meltblown nonwoven material

The invention relates to a preparation method of an electret polylactic acid meltblown nonwoven material, and belongs to the technical field of textile materials. According to the method, an inorganicelectret material nano silicon nitride and a polymer polytetrafluoroethylene are compounded to serve as a filler by means of a mechanical dispersion method, the charge storage capacity of the compound material can be effectively improved under a high-temperature or humid environment, the occurrence of an electret agglomeration phenomenon is avoided, and the service life of the product is prolonged; the compound filler and polylactic acid are meltblown and then subjected to treatment such as opening, impurity removal, combing, lapping, pre-needling, spunlacing and hot rolling, and the nonwovenmaterial is prepared. The method has the advantages that the inorganic electret material nano silicon nitride and the polymer polytetrafluoroethylene are compounded to serve as the filler by means ofthe mechanical dispersion method, and the charge storage capacity of the compound material can be effectively improved under the high-temperature or humid environment; the electret filler and the polylactic acid are compounded, so that the electrostatic potential of the surface of the polylactic acid nonwoven material is increased, and the charge storage capacity is improved.
Owner:广东东沁新材料科技有限公司

Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device

The invention relates to a preparation method of a non-volatile charge storage device, the non-volatile charge storage device and application thereof. The preparation method of the non-volatile charge storage device comprises the following specific steps: a) precipitating Al2O3 on the surface of a substrate by use of an atomic layer chemical vapor deposition method so as to form a tunneling layer; b) precipitating a layer of (HfO2)x(Al2O3)1-x film serving as a storage layer on the surface of the tunneling layer by use of the atomic layer chemical vapor deposition method; and c) precipitating a layer of Al2O3 serving as a barrier layer on the surface of the (HfO2)x(Al2O3)1-x storage layer by use of the chemical vapor deposition method. The non-volatile charge storage device comprises the tunneling layer, the storage layer and the barrier layer which are successively connected; Al2O3 is used as the tunneling layer and barrier layer of the storage device, and (HfO2)x(Al2O3)1-x is used asthe storage layer of the device. By using the method, the writing-in and erasing speeds of the device can be well improved, and simultaneously, the preparation method is simple to operate and easy tocontrol.
Owner:NANJING UNIV
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