481results about How to "Raise the crystallization temperature" patented technology

The invention relates to a heat-resistant aluminum-alloy conductor material for cables and a manufacture method thereof. The aluminum-alloy conductor material is prepared from the following components in percentage by weight: 0.3-1.0 percent of Fe, 0.01-0.3 percent of Cu, 0.01-0.3 percent of Mg, 0.01-0.3 percent of one, two or three of Mg, Ca, Mo and Sb and 0.05-0.8 percent of one or more rear-earth elements of Sc, Y and Er, not larger than 0.1 percent of Si, not larger than 0.15 percent of other impurities and the balance of Al. The aluminum-alloy conductor material has excellent conductivity, tensile performance, flexible performance and excellent heat resistance, can be used as insulated cable cores of wires and cables and is particularly suitable for overhead insulated conductor wire cores.

The invention relates to a doping modified phase change material and a phase change storage unit containing same and preparation thereof. The formula of the doping modified phase change material is (Sb2Se3)100-xYx, wherein, x is the atom percentage of an element and is more than 0 and less than or equal to 20, and Y is a doped element and is any one of Ni, Cr, Bi, As, Ga, In, Ge, Si, Sn, Ag, Al, C, N and O. The doping modified (Sb2Se3)100-xYx storage material not only remains the advantages of the fast phase change speed and the low melting point of Sb2Se3 storage material, but also increases crystallization temperature, thus overcoming the disadvantage of poor data retentivity of the Sb2Se3 storage material. The phase change storage containing the (Sb2Se3)100-xYx storage material has the advantages of high speed, low power consumption and favorable data retentivity and the like.

In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

The invention relates to a rare earth doped lithium yttrium fluoride nanometer material and a preparation method and application thereof. A modified high-temperature coprecipitation method is adopted to synthesize the rare earth doped lithium yttrium fluoride nanometer material with upper conversion/lower transfer luminescence, at the same time, epitaxial growth is conducted on the basis of a core, a mono-layer core-shell structure nanometer material which is uniformly covered can be obtained, and a lithium yttrium fluoride based multi-layer core-shell nanometer material is further prepared. The three prepared and obtained materials are good in monodispersity, uniform in particle size and excellent in luminescent property, after acid pickling treatment, water-soluble nanometer particles can be used for biological detection and biological imaging.

The invention discloses a polypropylene/ organic montmorillonite nano composite material which is prepared by the components in part by weight: 80-100 parts of polypropylene, 1-15 parts of organic montmorillonite, 0.02-0.10 part of organic peroxide initiator, 2.0-5.0 parts of cross-linking agent and 5-15 parts of compatilizer. The invention also discloses a preparation method of the polypropylene/ organic montmorillonite nano composite material. The polypropylene/ organic montmorillonite nano composite material has higher crystallization temperature, toughness and modulus as well as better strength, realizes low cost and high performance of polypropylene foam material, and improves the application competitiveness of polypropylene plastic.

The invention discloses a polyformaldehyde composition and a preparation method thereof. The polyformaldehyde composition contains by part of weight: 100 parts of acetal resins, 0.01-2 parts of oxidation inhibitors, 0.01-2 parts of formaldehyde catching agents, 0.01-2 parts of formic acid catching agents and 0.01-5 parts of crosslinking acetal resins. Compared with the prior art, the crosslinking acetal resins serve as nucleating agents and are obvious in nucleating effects, and a great number of crystal nucleuses are formed before crystallization of the acetal resins, so that crystallization of the acetal resin is induced, the number of the crystal nucleuses is improved, crystallization degree and temperature are improved, sphaerocrystal dimension is lowered, and accordingly crystallization structure of the acetal resin is improved. Further, due to the fact that the adding amount of the crosslinking acetal resins is small, and bad influence on mechanical property, thermal performance and surface morphology of the polyformaldehyde composition is avoided. Experiment results prove that the sphaerocrystal dimension of the polyformaldehyde composition is about 40 mu m, and the polyformaldehyde composition has good crystalline structure and good mechanical property.

The invention discloses a high-conductivity rare earth duralumin monofilament material for overhead conductors. The high-conductivity rare earth duralumin monofilament material comprises 0.002-0.05% of B, 0.02-0.20% of Er, 0.02-0.20% of Y, 0-0.060% of Si, 0-0.140% of Fe, 0.01% or less of V+Ti+Cr+Mn, and the balance of Al and inevitable impurity elements. The conductivity of the duralumin monofilament material prepared through adding a tiny amount of alloyage elements and optimally controlling the components of alloy is greater than 63.0% IACS, the tensile strength is greater than 165MPa, and the normal temperature mechanical properties and electrical performances can meet high-conductivity duralumin conductor requirements, so the high-conductivity rare earth duralumin monofilament material can be used in the field of overhead conductors in the electric power industry in order to meet energy saving and consumption reduction demands.

The invention discloses a phase-change memory device structure and the materials used. The structure includes a substrate; a single or multiple sandwich-memory-unit(s); a first and a second electrode electrically connecting to the first and the second sides of the sandwich-memory-units and a dielectric layer used as the insulator required by the memory device. The sandwich-memory-unit composes of a memory-layer, thinner than 30 nm, sandwiched between an upper and a lower barrier-layers. The barrier-layer is either an electrical conductor in case of vertical memory-cells or an electrical insulator in case of parallel memory-cells. The sandwich-memory-unit is characteristic of increased crystallization temperature of at least 50° C. as the thickness of the memory-layer is reduced from 15 to 5 nm; and the volume change of the memory-layer is less than 3% during phase change. The thickness and memory-material in each sandwich-memory-unit can be different in the multiple sandwich-memory-units.

The invention discloses a method for synthesizing acyl naphthalene by using a micro-channel reactor. The method comprises the following steps: (1) preparing acylation liquid, namely adding nitrobenzene and anhydrous aluminum chloride into a reactor in a low-temperature tank, finally adding acyl chloride, and controlling the temperature in the reactor to be 0-3 DEG C; (2) preparing a feed solution,namely adding nitrobenzene and 2-methyl naphthalene into a reactor provided with a stirrer; (3) reacting, namely injecting the feed solution and the acylation liquid into a micro mixer to be mixed, and feeding into the micro-channel reactor to be reacted; (4) washing, namely enabling the product discharged from the micro-channel reactor to enter the micro mixer again so as to be washed, enablingthe mixture into the micro-channel reactor, controlling the reactor temperature to 40-50 DEG C, and performing ultrasonic oscillation outside the reactor; (5) performing reduced pressure distillation,namely separating the products obtained in the step (4), and performing vacuum decompression to 500-1000Pa so as to obtain a crude product 2-methyl-6-acyl naphthalene; and (6) recrystallizing, namelyadding the crude product obtained in the step (5) into a solvent of 50-60 DEG C, stirring and dissolving, naturally cooling and crystallizing, continuously cooling and crystallizing in an ice-water bath, and finally filtering to obtain the purified product 2-methyl-6-acyl naphthalene.

Methods are provided for producing biodegradable polyhydroxyalkanoates (PHAs) with desired geometry, molecular mass, mechanical and/or physical-chemical properties from glycerol, an inexpensive carbon source and byproduct of the biodiesel industry. Microorganisms capable of converting carbon to PHA can be used to convert biodiesel-glycerol to poly-3-hydroxybutyrate (PHB) or other monomer or copolymer PHAs via fermentation. The microorganisms are cultured in a medium comprising glycerol as a primary carbon source and one or more low molecular mass organic acids as a secondary carbon source. Biomass can be harvested from the culture medium and crude PHA extracted and purified, thereby recovering purified PHA with the desired property. After PHA isolation, a nucleating agent can be added to improve certain physical-chemical properties of the PHA; e.g., crystallization temperature, to enhance performance of the PHA during injection molding.

The invention discloses a Ge/Sb type superlattice phase-change film material for a high-speed low-power phase-change memory. The material is characterized in that the material of a multilayer film structure is formed by depositing and combining Ge and Sb layers alternatively, one Ge layer and one Sb layer serve as an alternative period, and the Ge layer of the latter alternative layer is deposited on the Sb layer of the former alternative period. The Ge/Sb type superlattice phase-change film material utilizes the clamping effect of a multilayer interface in the superlattice structure, the size of the crystal grains is reduced, the crystallization time is shortened, crystallization is inhibited, the thermal stability of the material is improved, and the phase change speed is improved. The RESEST voltage of the Ge/Sb type superlattice phase-change film material is over 30% lower than that of a GE2Sb2Te5 film under the same voltage pulses, and thus, the power consumption of the Ge/Sb type superlattice phase-change film material is lower.

The invention relates to a tank furnace for producing basalt continuous filament and pertains to the technical field of novel inorganic non-metallic material processing equipment, the main characteristics are that the furnace body consists of a melting tank and material channels, the melting tank and the material channels are connected by non-submerged dog-holes, the melting tank is divided into a melting area and a homogenization area, a burner is arranged at the top of the furnace vertically, the burner guns of melting area and the feeding pipes are arranged in intervals, and the strong melting area of even feeding and even heating is formed. The material channels are arranged in three directions in the homogenization area of the melting tank, burner guns are arranged in the material channel in sections, the temperature of the fused mass in the material channels is guaranteed, more than 12 wiredrawing shaping areas are evenly arranged in each material channel so as to supply basalt melt mass for the wiredrawing bushing well, emptying devices are arranged at the tail part of the melting tank and the tail parts of all material channels, during the operation, the operation of discharging the meltwater can be carried out when impurities are stored in the meltwater for a long time or the varieties of raw materials are changed. The invention is in favor of improving the quality and industrialized production of the basalt continuous filament.

This invention relates to high thermally stable ferromagnetic metal glass blocks and their synthesis. The constituent of the said blocks comprises Co 35 - 45 at%, Fe 12 - 35 at%, Hf 2 - 10 at%, Mo 0 - 8 at%, Ti 2 - 8 at%, B 22 - 35 at%, and V 0 - 3 at%. The blocks can be prepared in copper molds, with excellent amorphization at >650 deg.C and the constituent designed more reasonable than the present materials, and used widely at higher temperature.

The present invention discloses a single crystal anatase titanium dioxide nano-tube array and a preparation method thereof. The method comprises: adopting an electrical arc melting method to prepare a TiNbZr alloy; carrying out burnishing, washing and drying on the matrix alloy; adopting the dried matrix alloy as an anode, adopting a Pt sheet as a cathode, and carrying out anode oxidation for 0.5-20 h at a room temperature, wherein a voltage is 10-100 V; placing the prepared nanometer titanium dioxide nano-tube array and the matrix alloy in a muffle furnace to carry out a heat treatment in air; and finally adopting hydrofluoric acid steam to remove an amorphous layer and the matrix alloy to obtain the single crystal anatase titanium dioxide nano-tube array. The single crystal anatase titanium dioxide nano-tube array has good cell compatibility and a visible ultraviolet light absorption performance. The preparation method has characteristics of strong controllability, high efficiency and simple operation.

The invention relates to the technical field of nano materials and relates to a SiO2/Sb superlattice nano phase change thin film material and a preparation method and application thereof. The material comprises a silicon dioxide thin film material and an elemental antimony thin film material. The silicon dioxide thin film material and the elemental antimony thin film material carry out nano-scale alternate superposition through magnetron sputtering. The structural general formula of the material is [SiO2(a)/Sb(b)]x, wherein a indicates the thickness (nm) of a single layer of SiO2 thin film, and a is larger than or equal to 1 and smaller than or equal to 9; b indicates the thickness (nm) of a single layer of Sb thin film, and b is larger than or equal to 1 and smaller than or equal to 8; x indicates the alternate periodicity of the single layer of SiO2 thin film and the single layer of Sb thin film, and x is any positive integer. The SiO2/Sb superlattice nano phase change thin film material has high phase change speed, good heat stability and low operation power consumption, is suitable for preparing high-speed, high-stability and low-power-consumption phase change memorizers, and has wide market prospects.