107results about How to "Fast phase change" patented technology

A controller (44) for a SMA actuator (2) includes an electgric power source (46) for applying an electric current through an SMA element (8), a sensor (48) to detect change in an electric resistance of the element (8); and a regulator (50) for controlling the magnitude of the applied electric current. The regulator (50) applies a first current above a safe limit current for the element (8) until a selected change in the electric resistance is detected and applies a second current less than the first current after the change is detected.

The invention relates to a doping modified phase change material and a phase change storage unit containing same and preparation thereof. The formula of the doping modified phase change material is (Sb2Se3)100-xYx, wherein, x is the atom percentage of an element and is more than 0 and less than or equal to 20, and Y is a doped element and is any one of Ni, Cr, Bi, As, Ga, In, Ge, Si, Sn, Ag, Al, C, N and O. The doping modified (Sb2Se3)100-xYx storage material not only remains the advantages of the fast phase change speed and the low melting point of Sb2Se3 storage material, but also increases crystallization temperature, thus overcoming the disadvantage of poor data retentivity of the Sb2Se3 storage material. The phase change storage containing the (Sb2Se3)100-xYx storage material has the advantages of high speed, low power consumption and favorable data retentivity and the like.

The invention relates to a GeTe / Sb2Te3 multilayer nanocomposite phase transition film, the GeTe film and the Sb2Te3 film of the GeTe / Sb2Te3 multilayer nanocomposite phase transition film are arranged alternately. The GeTe / Sb2Te3 multilayer nanocomposite phase transition film of the invention enjoys high phase change rate and high thermal stability; the invention can effectively enhance the on and off ratio of a phase change memory, thus ensuring the reliability of the data readout better.

The invention discloses a vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation device and a vanadium dioxide thin film phase transition characteristic-based terahertz wave modulation method. The device consists of a substrate, a vanadium dioxide thin film and a surface metal metamaterial. The terahertz wave modulation device realizes the intensity modulation of terahertz waves by utilizing the characteristics of high photoelectric parameter mutation and short phase transition time in the reversible phase transition process of vanadium dioxide. In the modulation method, the vanadium dioxide thin film is excited by one or more ways of external heat excitation, bias voltage excitation and laser excitation. The terahertz wave modulation device provided by the invention is designed and manufactured by adopting the vanadium dioxide thin film as a core dynamic functional material so as to solve the problems of low modulation efficiency and low modulation speed of the conventional terahertz wave dynamic modulation device.

The invention provides a phase change memory unit and a method for manufacturing the phase change memory unit. A memory medium layer of the phase change memory unit is a superlattice thin film structure which is composed of an Sb[x]Te[1-x] layer and a Ti[y]Te[1-y] layer, and then a stable layered (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material is obtained, wherein 0.4<=x<=0.8, 0.33<=y<=0.56, the thickness of the Sb[x]Te[1-x] layer is between 1 nm and 10 nm, and the thickness of the Ti[y]Te[1-y] layer is between 1 nm and 10 nm. The phase-change mechanism of the superlattice (Sb[x]Te[1-x])-(Ti[y]Te[1-y]) phase change material manufactured with the method is completely different from that of a traditional Ge-Sb-Te phase change material, and thus an obtained phase change memory device has the advantages of being lower in power consumption, higher in phase change speed, higher in retentivity, longer in service life and the like.

The invention relates to a preparation of white titanium pigment double action crystal seed from metatitanic acid, which is characterized in the process of (1) alkali dissolving, boiling the metatitanic acid purified by water washing with thermokalite; (2) water washing, removing residue sodium hydroxide and generated sodium sulfate thereby; (3) neutralizing and acid dissolving, neutralizing by hydrochloric acid and acid solution; (4) peptizing to generate a seed suspension, evaporating the suspension at a temperature from 105 to 300 DEG C., grinding, measuring the rutile microcrystalline with weight percentage over 90-98% by a X-ray diffractometer. The preparation uses metatitanic acid produced during sulphuric acid production process as raw material, adopts sol-gel process, with the produced rutile microcrystalline is safe and non-toxic, simple and easy to get raw material, low in cost, thus capable of evidently improving quality of product, enhancing stability of product quality and market competitiveness.

The invention relates to a Si / Sb80Te20 nanometer compound multi-layer phase change film and a method for preparing the same. The phase change film is prepared by alternately arranging and compounding Si films and Sb80Te20 films in nanometer scale, wherein the Si films separates all layers of the Sb80Te20 films to form a multi-layer film structure. The phase change film has the advantages that: (1) the crystallization temperature of the phase change film rises with the increase of the thickness of the Si film, and when the thickness of the Si film is over 5nm, the crystallization temperature of the phase change film is basically constant; (2) the separation action of the Si films on the Sb80Te20 films improves the thermal stability of the phase change film, and the temperature area where the phase change film is crystallized is very narrow, which shows that the phase change speed is very high; and (3) the crystalline state resistance of the phase change film increases with the increase of the thickness of the Si film, which facilitates the reduction of the operational power consumption in a programming process of a PCRAM device.

The invention relates to a phase change material doped with metallic elements in the microelectronic technical field, and in particular relates to an antimony-rich high-speed phase change material for a phase change memory, a method for preparing the antimony-rich high-speed phase change material and an application of the material. The antimony-rich high-speed phase change material for the phase change memory has a chemical formula of Ax(Sb2Te)(1 minus x), where the x is atomic percent, A is selected from W, Ti, Ta or Mn, and x is larger than zero and less than 0.5. The phase change material provided by the invention is similar to the common GeSbTe materials, and is contributed to realizing high density storage. The phase change material can be performed on reversible phase change under the action that nanosecond-level pulse is driven by external electricity. The phase change speed of a W-Sb-Te phase change material is three times that of the GeSbTe materials, and is contributed to realizing the high density storage.

The invention discloses a Ga40Sb60 / Sb superlattice phase transition film material for high-speed low-power-consumption phase change memory. The Ga40Sb60 / Sb superlattice phase transition film material has a multilayer composite film structure and is obtained through alternately depositing Ga40Sb60 layers and Sb layers. One Ga40Sb60 layer and one Sb layer are used as one alternating period, and the Ga40Sb60 layer of the next alternating period is deposited on the Sb layer of a previous alternating period. According to the Ga40Sb60 / Sb superlattice phase transition film material, a clamping effect of a multilayer interface in a superlattice structure is utilized for reducing dimensions of crystal particles, thereby shortening crystallization time, restraining crystallization, improving thermal conductivity of the material and furthermore increasing phase change speed. Furthermore the Ga40Sb60 / Sb superlattice phase transition film material has advantages of realizing small size change in the phase change process, ensuring good contact between a phase change layer and electrode material, and finally improving stability and reliability of a phase change memory device.

The invention provides a phase-changing memory unit with a similar super lattice structure, which comprises a phase-changing material layer. In the phase-changing material layer, the similar super lattice structure is formed by periodic and alternate growth of a single GaSb layer and a single phase-changing material Sb2Te3 layer in a nano-thick single layer. The single GaSb layer is 2-8nm thick, and the single phase-changing material Sb2Te3 is 3-12nm thick. The similar super lattice material has the advantages of adjustable crystallization temperature, low thermal conductivity, good thermal stability and high phase-changing speed. When the similar super lattice material is applied in a phase-changing memory, the phase-changing memory has the advantages of high data retention capability, high erasing and writing speed and low power consumption. A particularly preferred similar super lattice GaSb (4 nm) / Sb2Te3 (6nm) has more advantages than other components in the performance of materials and devices.

The invention relates to a class superlattice tin-selenium / antimony nanometer phase transition film, comprising a SnSe2 material and a simple substance Sb material which are alternatively superposed to form a class superlattice structure. The structure general formula of the phase transition film is [SnSe2(a) / Sb(b)]x; the total thickness of the class superlattice phase transition film is 40-60 nm, wherein a is the thickness of the SnSe2 material in each layer of phase transition film, and is in the range of 8-12 nm; b is the thickness of the simple substance Sb material in each layer of phase transition film, and is in the range of 1.5-3 nm; x is the periodicity of the class superlattice phase transition film structure, and is 4 or 5. The phase transition film is obtained through a magnetron sputtering mode, and is applied to a PCRAM device. Compared with the prior art, the phase transition film has the advantages of great heat stability, fast phase transition speed, small volume change, low power consumption and excellent comprehensive performance.

The invention provides a phase-change storage material and a preparation method of the phase-change storage material as well as a storage device provided with the phase-change storage material and a preparation method of the storage device, wherein the phase-change storage material is a Ga-Sb compound with the stoichiometry of GaxSb100-x, and x is more than 0 and less than 50. Compared with the prior art, the phase-change storage material is simple in structure, strong in processability and free from easy-pollution elements; and the phase-change storage device made from the phase-change storage material has the advantages of being rapid in phase-change speed, low in power consumption, strong in data retention, stable in electrical property and the like.

The invention discloses an intersection traffic information perception control system and a corresponding method. The system comprises a plurality of intersection sensors which are configured to respectively collect the traffic information of each road connected with an intersection; one or more edge processing modules configured to process the traffic information on each road, obtain vehicle target information and lane information on each road, and calculate vehicle statistical information on each lane of each road; a central processing module configured to calculate lane occupancy information of each lane according to the vehicle statistical information on each lane of each road, and optimizing the timing strategy of each phase of the intersection traffic signal in real time according tothe lane occupancy information; and an intersection traffic signal control system configured to execute intersection traffic signal control according to the optimized timing strategy.

The invention discloses a multilayer nanometer composite phase-transition thin film material and a preparation method and application thereof. The material is formed by arranging Sn2Se3 film layers and Sb film layers alternatively, one Sn2Se3 film layer and one Sb film layer serve as an alternative period, and the Sn2Se3 layer in the latter alternative period is deposited on the Sb layer in the former alternative period. A general formula of the film structure of the film material is [Sn2Se3(a) / Sb(b)]x, a represents the thickness of the single Sn2Se3 film layer, b represents the thickness of the single Sb film layer, a is greater than or equivalent to 1nm and lower than or equivalent to 50nm, b is greater than or equivalent to 1nm and lower than or equivalent to 50nm, x represents the number of alternative periods or layers of the Sn2Se3 film layers and Sb film layers, and x is a positive integer. The phase-transition thin film material uses Sb as a crystallization induction layer to accelerate phase transition of the phase-transition material, and advantages of low melting point and high thermal stability of Sn2Se3 are used; and the clamping effect of multiple interfaces in the multilayer nanometer composite structure is used to reduce the size of crystal grains, and further to shorten the crystallization time, inhibit crystallization, improve the thermal stability and accelerate phase transition.

The invention provides a phase change material, a phase change storage unit and a preparation method thereof, wherein the phase change material comprises a tantalum element, an antimony element and atellurium element, wherein the chemical formula of the phase change material is TaxSbyTez, wherein x, y and z refer to atomic percentages of elements, wherein x is greater than or equal to 1 and lessthan or equal to 25, y is greater than or equal to 0.5, z is less than or equal to 3, and x+y+z is equal to 100. The TaxSbyTez phase change film material disclosed by the invention has the characteristics of being high in phase change speed, outstanding in heat stability, high in data retention capability, long in cycle life, high in rate of finished products and the like, wherein Ta5.7Sb37.7Te56.6 has 10 years of data retention at 165 DEG C, and when being applied to a phase change storage device unit, the operation speed of 6ns and the erase number of one million or above can be achieved; meanwhile, the TaxSbyTez phase change material has very small crystal particles, and the sizes of the crystal particles is still smaller than 30 nm after annealing treatment at 400 DEG C for 30min, which is very important for stability, low power consumption and finished product rate of the device. The preparation method of the phase change memory unit is compatible with a CMOS process and is convenient for accurately controlling the components of the phase change material.

The invention discloses a method for improving phase-change performance of polyethylene glycol / polyester solid-solid phase change material (PEG / PET PCM) through utilizing eutectic simultaneously used by polyethylene glycols with different molecular weights, which comprises the steps that the polyethylene glycols with different molecular weights are simultaneously used in a certain mass ratio to synthesize the PEG / PET PCM so as to improve phase transition enthalpy of the PEG / PET PCM with a controllable phase-change temperature and a narrowing phase-change peak width. The method has the advantages that the phase transition enthalpy of the PEG / PET PCM synthesized chemically by graft copolymerization through PEG eutectic is up to 157.17J / g, which is improved by 35 percent and is larger than the phase transition enthalpy of the PEG / PET PCM which is synthesized by PEGs with two kinds of different molecular weights singly and the PET, and the product has no toxicity and no harm, improved production yield, low cost, and good application prospect.

The invention discloses a multi-layer nanometer composite thin film material for a high-speed high-density phase transition storage. The multi-layer nanometer composite thin film material is a SbSe / Ga30Sb70 multi-layer composite thin film, and the structure of the multi-layer nanometer composite thin film material conforms to the following general formula: [SbSe (a) / Ga30Sb70 (b)]x, and is capable of being abbreviated to be [SS(a) / GS(b)]x. In the formula, the a and the b represent the thickness of a single-layer SbSe thin film and the thickness of a single-layer Ga30Sb70 thin film respectively, wherein the a conforms to the following formula: 1<=a<=50nm, the b conforms to the following formula: 1<=b<=50nm, the x represents the number of alternating cycles of the single-layer SbSe thin film and the single-layer Ga30Sb70 thin film or the number of alternating layers of the single-layer SbSe thin film and the single-layer Ga30Sb70 thin film, and the x is equal to 1 or 2 or 3 or 4. The SbSe / Ga30Sb70 multi-layer composite phase transition thin film is formed in a composite mode at the nanometer level, has a high resistance state, a middle resistance state and a low resistance state, is capable of achieving multi-stage storage, and greatly improves the storage density and the reading and writing operation speed of the storage.

The invention belongs to the field of semiconductor materials, and discloses an Si-Sb-Se nano phase-change thin film material. A general formula of a chemical composition of the phase-change thin film material is Si<x>(Sb<2>Se)<1-x>, wherein x is smaller than 0.50 and greater than or equal to 0.05; the proportion of an ingredient Si in the Si<x>(Sb<2>Se)<1-x> is controlled through the diameters of stacked Si sheets; and the Si-Sb-Se nano phase-change thin film material is formed by deposition through a room-temperature high-vacuum magnetron sputtering method. The Si-Sb-Se nano phase-change thin film material provided by the invention does not contain a Te element and belongs to an environment-friendly material; and meanwhile, Si-Sb-Se also has ultra-high thermal stability, relatively low power consumption and a high phase change speed, is an ideal phase-change storage material and has a relatively good market application prospect.

The invention belongs to the technical field of nanomaterials, and relates to an Er-Se-Sb nanometer phase change film material and a preparation method and an application thereof. The film material consists of the three elements of erbium, selenium and antimony, and a general chemical formula of the film material is shown as Er<x>(Se<y>Sb<100-y>)<1-x>, wherein x is greater than 0 and smaller than or equal to 0.05, and y is greater than to 0 and smaller than or equal to 50. The nanometer phase change material can realize a reversible phase change process, has a relatively large difference value between high resistance and low resistance before and after phase change, is easy for implementing '0' and '1' needing to be distinguished during storage, and is an ideal phase change storage material. The preparation method is mature, and easily compatible with an existing semiconductor technology. The nanometer phase change material inherits the advantage of high phase change speed of an antimony-rich phase, has a relatively high crystallization temperature and a data holding capability at the same time, has relatively high crystal-state and non-crystal-state resistance, and facilitates lowering of the power consumption of a phase change storage device.

The invention relates to a Ge-Sb-Te Ge-enriched N-doped phase-change material for a phase-change memory. The Ge-Sb-Te Ge-enriched N-doped phase-change material for the phase-change memory, provided by the invention, comprises chemical components which accord with a chemical formula as follows: Nx[(Ge1+yTe)a(Sb2Te3)b]100-x, wherein y is more than 0 but not more than 3, x is more than 0 but not more than 35, a is equal to 1 or 2 and b is equal to 1 or 2. The phase-change material is a storage material which has a reversible phase change under the effects of external energy. When a magnetic control sputtering is adopted, atom percentage contents of all the components are adjusted through controlling a power supply power of each target material and each target position and the N2 / Ar2 flow ratio so that phase-change storage materials with different crystallization temperatures, smelting points and crystallization activation energies are obtained. Compared with the traditional Ge2Sb2Te5 thin-film material, the Ge-enriched N-doped phase-change material provided by the invention has the advantages of higher crystallization temperature, better data keeping capability, better heat stability, lower power consumption and the like.

The invention relates to a preparation method for nano-polycrystalline coesite. Microcrystalline alpha-SiO2 and nanocrystalline alpha-SiO2 serve as initial materials, after purification decontamination, no binder except deionized water is added, a sintering unit is assembled, and the nano-polycrystalline coesite material is prepared directly through high-temperature ultrahigh pressure sintering. The nano-polycrystalline coesite is single in phase and uniform in grain size, and the situations that the nano-polycrystalline coesite is reunited and grains abnormally grow at the high temperature cannot occur. In this way, the method successfully solves the problems that nanometer raw materials are reunited and grains abnormally grow.

The invention provides a C-doped Sc-Sb-Te phase change memory material, a phase change memory cell, and a method for fabricating the same. The Sc-Sb-Te phase change memory material is a Sc-Sb-Te phasechange memory material. In the doped Sc-Sb-Te phase change memory material, the atomic percentage of C is 1% to 40%. The Sc-Sb-Te3 is doped with C, and since C is a low-thermal-conductivity material,thermal diffusion can be well avoided. Further, the good conductivity of C ensures good conduction of the material. Under the effect of external energy, the C-doped Sc-Sb-Te3 phase change memory material can reversibly switch between a high-resistance state and a low-resistance state, and a resistance ratio of the high-resistance state to the low-resistance state can reach two orders of magnitude. When used as the storage medium of a phase change memory, the phase change memory cell not only has the advantages of fast phase change speed and low write operation current, but also is greatly improved in the high-temperature data retention and the reliability. The phase change memory using the phase change memory cell structure of the invention has superiorities of high speed, low power consumption, and good data retention.

In the battery shell there are pole pieces of anode and cathode. The anode paste is mainly composed of nickel hydroxide. In the supplementary materials there are CoO, TiO2, and Y2O2 as additive. The cathode paste is mainly composed of hydrogen storage alloy powder. The pastes are coated on current collector to form pole pieces of anode and cathode. The anode piece, diaphragm, and cathode piece are rolled to form cell core. The electrolyte is filled into the battery shell. The said cathode piece is longer than the one of anode in rolling direction, and is 1-4mm wider than the one of anode, so that the cathode piece in outmost layer contacts the inner wall of battery shell, and the bottom of cathode is bonded with the bottom of battery shell by welding.

The invention discloses a photoetching method using a metal glass as a photoresist. The method specifically comprises the following steps: depositing a metal glass material photoresist layer on the surface of a substrate; exposing a sample obtained through depositing according to a target nanometer pattern; generating a nanometer crystallized graphic at an exposed part when the exposed part reaching the crystallization temperature is changed in phase; and etching the exposed sample with the nanometer crystallized graphic so as to form a desired nanometer pattern. According to the invention, as the metal glass material replaces an organic photoresist, the photoetching line width of the obtained sample can be far smaller than the diffraction limit of a laser focusing spot; and moreover, low cost and large etching selection ratio are obtained. The invention further discloses a system for realizing the method; and the system mainly comprises a computer, an arbitrary waveform generator, a semiconductor laser, a collimating beam expander, a beam isolator, a beam splitter, a focusing servo mechanism, a focusing lens, an X-Y-Theta three-dimensional displacement platform and a focusing servo control box. The system disclosed by the invention has the advantages of simple composition, high performance cost, simplicity in operation, comparatively low requirement on operation environment and high output rate.

An infrared heat-light modulator adopting a sandwich composite structure consists of two substrates, FTO transparent conductive film layers and a vanadium dioxide film layer. A preparation method of the infrared heat-light modulator comprises the following steps: adopting a sol-gel method, precipitating an FTO transparent conductive film layer on each substrate, then sputtering metal vanadium on one FTO transparent conductive film through direct current magnetic control, obtaining the nano vanadium dioxide film layer through medium temperature annealing, and finally encapsulating the nano vanadium dioxide film layer with the other substrate with precipitated FTO transparent conductive film so as to form the infrared heat-light modulator adopting the sandwich composite structure. The infrared heat-light modulator can realize infrared band heat-light modulation, is low in insertion loss, achieves femtosecond level in phase change speed, has the advantages of low power consumption, simple structure, high reliability, easiness in manufacture and the like, and can be applied to the technical field of photoelectrons.

The present invention relates to a nanometer composite multilayer phase-change film and a preparation method and an application thereof. The phase-change film is obtained by sputtering a Ge50Te50 phase-change material and a Ge8Sb92 phase-change material periodically, and when the phase-change film is prepared, a SiO2 / Si(100) substrate is cleaned, a sputtering target material is installed, a mechanical pump and a molecular pump are turned on orderly to vacuumize, the flow of a sputtering gas, the sputtering air pressure in a cavity and the sputtering power of the target material are set, and a room temperature magnetic control sputtering method is adopted to prepare the [Ge50Te50(a) / Ge8Sb92(b)]x nanometer composite multilayer phase-change film. Compared with the prior art, the nanometer composite multilayer phase-change film of the present invention has the advantages of good heat stability, fast phase-change speed, high storage density, etc.

A puffed pet treat and method of making are disclosed. The puffed pet treat is comprised of a starting material that is an animal part, which is treated, sliced into small portions, and exposed to high velocity hot air causing rapid heat transfer within the small portions causing the water contained in the material as moisture to undergo a rapid phase change from liquid to steam which softens and expands the material thereby forming a puffed product.

The invention relates to a Ge-Sb-Te Ge-enriched N-doped phase-change material for a phase-change memory. The Ge-Sb-Te Ge-enriched N-doped phase-change material for the phase-change memory, provided by the invention, comprises chemical components which accord with a chemical formula as follows: Nx[(Ge1+yTe)a(Sb2Te3)b]100-x, wherein y is more than 0 but not more than 3, x is more than 0 but not more than 35, a is equal to 1 or 2 and b is equal to 1 or 2. The phase-change material is a storage material which has a reversible phase change under the effects of external energy. When a magnetic control sputtering is adopted, atom percentage contents of all the components are adjusted through controlling a power supply power of each target material and each target position and the N2 / Ar2 flow ratio so that phase-change storage materials with different crystallization temperatures, smelting points and crystallization activation energies are obtained. Compared with the traditional Ge2Sb2Te5 thin-film material, the Ge-enriched N-doped phase-change material provided by the invention has the advantages of higher crystallization temperature, better data keeping capability, better heat stability, lower power consumption and the like.

The invention provides a Si-Sb-Te based sulfur group compound phase-change material for a phase change memory, belonging to the technical field of micro-electronics. The phase-change material has high heat stability and high crystallization velocity, and the component general formula is (SiaSbbTec)1-yMy, wherein a nitrogen element or an oxygen element or the mixture of the nitrogen element and the oxygen element; in SiaSbbTec, the content a of Si is 10-25% by atom, and the atom percent ratio of the content between Sb and Te is 1.7<=(b / c)<=2.0; and the content of the doped element M is 0-25% by atom. Under the electrical pulse effect, the material can be converted reversibly between the non-crystalline state (high impedance state) and the crystalline state (low impedance state), thus the information storage is realized; compared with the traditional Ge2Sb2Te5, the material has the advantages of high crystallization temperature, higher heat stability and better crystalline state resistivity; and with the phase-change material provided by the invention as the information memory medium, data retention capability of the memory can be effectively increased, rapid operation velocity can be maintained, the write operation power consumption can be lowered, and the reliability of the memory is improved.