38results about How to "Strong data retention" patented technology

The invention pertains to the technical field of semiconductor memories, and specifically relates to a U-shaped trench type semiconductor device which comprises at least one semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a U-shaped trench region and a gate-control p-n junction diode for connecting the floating gate and the drain region. The U-shaped trench type semiconductor device provided in the invention uses the floating gate to store information, and perform charging and discharging on the floating gate through the gate-control p-n junction diode, so advantages of small unit area, high chip density, low operating voltage during data storage and good data rentation capability can be realized.

The invention provides a phase-changing memory unit with a similar super lattice structure, which comprises a phase-changing material layer. In the phase-changing material layer, the similar super lattice structure is formed by periodic and alternate growth of a single GaSb layer and a single phase-changing material Sb2Te3 layer in a nano-thick single layer. The single GaSb layer is 2-8nm thick, and the single phase-changing material Sb2Te3 is 3-12nm thick. The similar super lattice material has the advantages of adjustable crystallization temperature, low thermal conductivity, good thermal stability and high phase-changing speed. When the similar super lattice material is applied in a phase-changing memory, the phase-changing memory has the advantages of high data retention capability, high erasing and writing speed and low power consumption. A particularly preferred similar super lattice GaSb (4 nm) / Sb2Te3 (6nm) has more advantages than other components in the performance of materials and devices.

The invention provides a phase change material, a phase change storage unit and a preparation method thereof, wherein the phase change material comprises a tantalum element, an antimony element and atellurium element, wherein the chemical formula of the phase change material is TaxSbyTez, wherein x, y and z refer to atomic percentages of elements, wherein x is greater than or equal to 1 and lessthan or equal to 25, y is greater than or equal to 0.5, z is less than or equal to 3, and x+y+z is equal to 100. The TaxSbyTez phase change film material disclosed by the invention has the characteristics of being high in phase change speed, outstanding in heat stability, high in data retention capability, long in cycle life, high in rate of finished products and the like, wherein Ta5.7Sb37.7Te56.6 has 10 years of data retention at 165 DEG C, and when being applied to a phase change storage device unit, the operation speed of 6ns and the erase number of one million or above can be achieved; meanwhile, the TaxSbyTez phase change material has very small crystal particles, and the sizes of the crystal particles is still smaller than 30 nm after annealing treatment at 400 DEG C for 30min, which is very important for stability, low power consumption and finished product rate of the device. The preparation method of the phase change memory unit is compatible with a CMOS process and is convenient for accurately controlling the components of the phase change material.

The invention provides a Si-Te-Sb series phase change film material for a phase change memory, which belongs to microelectronics field. At present, Ge2Te5Sb2 material has lower crystallization temperature (about 165 DEG G) and faces to a danger of data loss. The Si-Te-Sb memory material for the phase change memory has a general formula as follows: SiaTebSb100-(a+b), therein, 20<=a<=b, 20<=b<48. The material has higher crystallization temperature, better thermal stability and more stronger data keeping ability, at the same time, has even crystal phase structure and nanometer-sized grain size, and has better reversible phase change ability, at the same time, improves fatigue property.

An RFID (Radio Frequency Identification) chip with a built-in double memory relates to an RFID technology. The RFID chip comprises a simulation front-end module, a memory module and a digital processing control module which is connected with the simulation front-end module and the memory module. The RFID chip with the built-in double memory is characterized in that the memory module comprises an EEPROM (Electrically Erasable Programmable Read Only Memory) unit and an XLPM (Ultra Low-power Permanent Memory) unit. The RFID chip with the built-in double memory has the advantages of being convenient to utilize due to the fact that different memories are distinguished through addresses, strong in data retention capability, radiation resistant, tamper-proof and capable of being well embedded in an RFID chip design or other designs in an IP (Internet Protocol) mode.

The invention provides a thin film material for a phase change memory and a preparation method thereof. The thin film material is a material composed of three elements, namely copper, stibium and tellurium, and a general formula of the material is CuxSbyTez, in which x is greater than 0 and less than or equal to 40, y is greater than or equal to 15 and less than or equal to 85, and z is greater than or equal to 15 and less than or equal to 85. According to the material provided by the invention, different crystallization temperatures, melting points and crystallization rates can be obtained by adjusting contents of the three elements in the material, so that the element ratio of the copper to the stibium to the tellurium is properly adjusted to obtain a higher crystallization temperature, a better thermal stability, a lower melting point and a higher crystallization rate compared with the traditional Ge2Sb2Te5(GST). Moreover, copper interconnection is a mainstream interconnection technology in the current oversized-scale integrated circuit, and the processing technology of the Cu element becomes more mature through the extensive use of the interconnection technology, and therefore, the Cu-Sb-Te phase change material provided by the invention is easy to process and has good compatibility with a COMS (Complementary Metal Oxide Semiconductor).

Provided are a flash memory unit and a floating gate forming method thereof. The floating gate forming method of the flash memory unit comprises the following steps of providing a substrate on which a floating gate layer doped with first type ions is formed; forming a graphical first photoresist on the floating gate layer doped with the first type ions; etching the graphical first photoresist through a dry method, wherein the figure of the first photoresist after etching through the dry method has a smaller dimension than the figure of the first photoresist before etching through the dry method; and performing a second type ion injection to the floating gate layer doped with the first type ions by using the first photoresist after etching through the dry method as a mask layer to form a floating gate layer with a double doped structure, wherein the first type ions is inversed with the second type ions. According to the floating gate of the flash memory unit and the flash memory unit forming method, the flash memory unit that is small in critical dimension and has the double doped floating gate structure can be produced, and the flash memory unit is high in programming efficiency, high in data maintenance capability and low in cost of processing.

The invention provides a Ta-Ge-Sb-Te phase change material, a preparation method thereof and a phase change memory unit. The Ta-Ge-Sb-Te phase change material comprises a tantalum (Ta) element, a germanium (Ge) element, an antimony (Sb) element and a tellurium (Te) element, the chemical formula of the Ta-Ge-Sb-Te phase change material is TaxGeySbzTe<100-x-y-z>, x is greater than or equal to 2 andless than or equal to 15, y is greater than or equal to 5 and less than or equal to 50, and z is greater than or equal to 5 and less than or equal to 70. According to the Ta-Ge-Sb-Te phase change material provided by the invention, storage materials with different crystallization temperatures, resistivity and crystallization activation energy can be obtained by adjusting the contents of the tantalum (Ta) element, the germanium (Ge) element, the antimony (Sb) element and the tellurium (Te) element and the thickness of a thin film. Compared with the traditional Ge2Sb2Te5, the Ta-Ge-Sb-Te phase change material provided by the invention has the advantages of higher thermal stability, stronger data retention force and higher crystallization speed.

An erasable rewriting phase change optical disk capable of being subjected to fluorescent read comprises an upper protective layer, a recording layer, a lower protective layer and a disk base, and is characterized in that the recording layer is a fluorescent phase change recording layer; the fluorescent phase change recording layer is formed by mixing an Sb2Te3-GeTe film into BiSb of which the thickness is 10-200 nm or mixing the Sb2Te3-GeTe film into NiO of which the thickness is 10-200 nm. The optical disk reserves the characteristics of quick writing and erasing speed, strong data retentivity and high cycling stability of the conventional phase change optical disk, and meanwhile the signal-to-noise ratio of reading is greatly improved. The reading is not reflective reading, no extra metal reflecting layer is needed, and the structure of the film is simpler as compared with the conventional phase change optical disk.

The invention provides a phase change thin film material, a phase change memory unit and a preparation method thereof, wherein the general formula of the phase change thin film material is Ni x Ti y Sb z Te 100‑x‑y‑z , where 0<x≤40, 15≤y≤85, 15≤z≤85, 30≤x+y+z<100. The phase change thin film material provided by the present invention can achieve reversible phase change through external electric pulses. There are obvious high and low resistance states before and after the phase change, and the difference is large, which is convenient for the external circuit to easily read "0" or "1". "state, is an ideal phase-change storage material; the phase-change thin film material of the present invention, and the commonly used Ge 2 Sb 2 Te 5 In comparison, it has higher crystallization temperature, faster crystallization speed, lower operating voltage and more stable chemical preparation process.

The invention relates to the technical field of nanomaterials, and relates to a SiO2 / Sb type superlattice nanometer phase change thin film material and a preparation method and application thereof. The material of the present invention includes a silicon dioxide thin film material and an elemental antimony thin film material, and the two are alternately superimposed on a nanometer scale by a magnetron sputtering method. The general structural formula of the material of the present invention is [SiO2(a) / Sb(b)]x, wherein: a represents the thickness (nm) of the single-layer SiO2 film, and 1≤a≤9; b represents the thickness of the single-layer Sb film Thickness (nm), and 1≤b≤8; x represents the number of alternating periods of the single-layer SiO2 film and the single-layer Sb film, and x is any positive integer. The SiO2 / Sb type superlattice nano-phase change thin film material of the invention has faster phase change speed, better thermal stability and lower operation power consumption, and is suitable for preparing high-speed, high-stability and low-power consumption phases Variable memory has great market prospects.

The invention discloses an optical phase change storage material based on an arsenic-tellurium compound, a device and a preparation method thereof, the optical phase change storage material comprises an arsenic (As) element and a tellurium (Te) element, the chemical formula of the phase change material is AsxTey, xlt; 3, 2lt; yt; Yt; 4. The phase change material is high in crystallization temperature and good in amorphous stability, meanwhile, the reflectivity / transmittance difference of the crystal phase and the amorphous phase of the material within the visible light range is large, binary logic recognition of 0 and 1 is expected to be broken through, and stable recognition of multiple optical reflectivity / transmittance states is achieved in the same device unit. The optical phase change memory provided by the invention comprises a substrate layer, an optical waveguide material layer and a phase change material layer which are sequentially stacked from bottom to top, and the phase change material used by the phase change material layer is the arsenic tellurium compound phase change material. An optical phase change memory device with strong data retention and stable performance can be prepared based on the arsenic tellurium compound optical phase change memory material, and a multi-valued optical phase change memory or a brain-like computing device is expected to be prepared.

The invention provides a phase change memory material and a preparation method thereof. The phase change memory material is the compound of silicon-bismuth-tellurium, the general equation is SiBiyTe100-(x+y), wherein x is more than 10 but less than 90, and y is more than 0 and less than 50. Compared with the prior art, the phase change memory material has the advantages of being simple in structure, small in grains, high in heating efficiency, low in power dissipation, fast in device storage speed, high in crystallization temperature, good in heat stability, strong in data retention and the like.

The present invention provides an al‑sc‑sb‑te phase transformation material, phase -changing memory unit and its preparation method.The chemical general formula of Al‑sc‑sb‑Te phase transformer material is (ALSC 2 Cure x Sb 2 TE) y Among them, 0 <x ≤ 1, 0 <y ≤ 1, and x+y = 1.This material can obtain storage materials with different crystalline temperatures, resistors and crystallization activity by adjusting the content of the four elements in the material. Proper adjustment (ALSC 2 Cure x Sb 2 TE) y The proportion of Chinese elements can then obtain a phase -changing material with better thermal stability, stronger data maintenance, and faster crystallization speed.The present invention (ALSC 2 Cure x Sb 2 TE) y The preparation method of phase -changing materials is simple, which is convenient for accurate control of material ingredients.

The invention relates to a phase transition material and a preparation method thereof, wherein the phase transition storage material is a gallium-antimony-selenium compound. The chemical component is Ga x SbySez, wherein 4 (*(40, 25 (y (85, 5 (z (70, x + y + z = 100. The gallium-antimony-selenium phase transition thin film material provided in the invention, compared to a common Ge2Sb2Te5 (GST) material, has a better heat stability, a faster phase transition speed and a lower melting point. Meanwhile, the gallium-antimony-selenium phase transition thin film material provided in the invention does not contain element Te, is friendly to environment, does not contaminate semiconductor equipment and brings conveniences for subsequent technology processing. The phase transition memory manufactured of the phase transition storage material possesses advantages such as strong data confining force, low power dissipation, fast operation speed, stable electrics performance and the like.

The invention relates to a nanocomposite phase-change material, a preparation method and an application thereof in a phase-change memory, wherein the nanocomposite phase-change material comprises a phase-change material GeTe with a molar percentage of 70-99% and a medium material HfO2 with a molar percentage of 1-30%. The phase-change material GeTe and the medium material HfO2 are uniformly compounded in a nanoscale, so that the crystallization of the phase-change material is suppressed, the thermal stability of the material is enhanced and the data keeping capacity of the material is improved on one hand, and the valid programming volume is reduced due to the participation of the medium material so as to reduce the volume change before and after the crystallization of phase-change unit and decrease the RESET current on the other hand; therefore, the operation stability and the realization of low power consumption of storage apparatus are promoted. In a word, the novel nanocomposite phase-change material is applied to a memory, and is capable of decreasing the RESET voltage of a phase-change storage apparatus and reducing the programming volume, which is beneficial to realizing high-density storage, increasing the heating efficiency of the phase-change memory during programming process, decreasing the power consumption, enhancing data keeping capacity, and the like.

The invention discloses a Ge-Sb-Te-Se film material for a phase change random access memory and a preparation method of the material. The material is characterized by consisting of germanium, stibium, tellurium and selenium elements; a general formula of the material is (Sb2Se)x(Ge2Sb2Te5)y; the mole percentage x of Sb2Se is greater than 0% and less than or equal to 84%; the mole percentage y of GST is greater than or equal to 16% and less than or equal to 95%; and x+y is equal to 100. The method comprises the following concrete steps of controlling the vacuum degree of a magnetron sputtering coating system to be 0-1.6*10<-4>Pa, controlling luminance build-up air pressure required by sputtering to be 0.3Pa, controlling the power of a radio-frequency power supply on an Sb2Se target to be 3-13W, controlling the power of a radio-frequency power supply on a GST target to be 5-50W, controlling the sputtering time to be 10-60min, and performing deposition to obtain the Ge-Sb-Te-Se film material. The material has the advantages of good heat stability, high data retention and high phase change speed.