Phase change memory material and preparation method thereof
A phase-change storage and phase-change technology, applied in the field of phase-change storage materials and their preparation, can solve the problems of large density changes, weak data retention performance, and poor crystallization speed of phase-change storage materials, and achieve strong data retention, Excellent thermal stability and low power consumption
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[0019] The inventors of the present invention have found that in the existing phase-change memory, the phase-change memory material of germanium-antimony-tellurium ternary system is widely used. Poor and low crystallization temperature, poor thermal stability and weak data retention performance.
[0020] Therefore, the inventors of the present invention have improved the prior art and proposed a novel phase-change memory material and its preparation method. The phase-change memory material is a compound of silicon-bismuth-tellurium and has nanocomposite properties. The crystal grain is small, the heating efficiency is high, and the device storage speed is fast; and it has the advantages of high crystallization temperature, good thermal stability and strong data retention.
[0021] The invention will be described in detail below through specific examples.
[0022] The invention provides a phase-change memory material which is a compound of silicon-bismuth-tellurium, whose gene...
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