2277 results about "Crystallization temperature" patented technology

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

A multi-layer dielectric layer structure for a semiconductor device. The multi-layer dielectric layer structure comprises a silicate interface layer having a dielectric constant greater than that of silicon nitride and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises one or more ordered pairs of first and second layers. With the present invention, the dielectric constant of the high-k dielectric layer can be optimized while improving interface characteristics. With a higher crystallization temperature realized by forming the multi-layer structure, each of whose layers is not more than the critical thickness, leakage current can be reduced, thereby improving device performance.

A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than the crystallization temperature of the free layer material. The crystallization inhibiting layer inhibits the crystallization of the underlying free layer, providing improved thermal stability for the resistive memory device.

Compounds and compositions comprising specific metal salts of bicyclo[2.2.1 ]heptane dicarboxylate salts in order to provide highly desirable properties within polyolefin articles are provided. The inventive salts and derivatives thereof are useful as nucleating and/or clarifying agents for such polyolefin, provide excellent crystallization temperatures, stiffness, and calcium stearate compatibility within target polyolefin. Also, such compounds exhibit very low hygroscopicity and therefore excellent shelf stability as powdered or granular formulations. Polyolefin additive compositions and methods of producing polyolefin with such compounds are also contemplated within this invention.

The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.

Disclosed is a polypropylene composition useful for making solid state oriented film. The composition comprises two predominantly isotactic polypropylenes with the melting point temperature of one of the polypropylenes being substantially lower than the melting point temperature of the other. In one embodiment of the composition the higher melting point polypropylene is made by Ziegler-Natta catalysis, while the lower melting point polypropylene is made by metallocene catalysis. Compared to polypropylene with similar melt flow rate and made by Ziegler-Natta catalysis, and solid state oriented film thereof, the composition provides a better balance of elevated temperature draw characteristics and physical properties of oriented film made therefrom. Thus, at the same or lower elevated temperature yield stress, oriented film of the composition exhibits improved properties such as stiffness, elongation-at-break, dimensional stability, and oxygen barrier. Also disclosed is a method for the manufacture of oriented, flexible packaging film. In the method a cast sheet is melt extruded from the composition, and, after cooling until it is solid, the cast sheet is stretched to the desired extent of orientation at a temperature which the sheet does not break while being stretched, but below the Tm of the composition. The resulting film then is cooled to at least the crystallization temperature of the lower melting point polypropylene.

A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550° C. or higher. Theoretical calculations show that dissociation of NH₃ at this temperature is significant. However, the dissociation of NH₃ is avoided by adding extra N₂ pressure after filling the reaction vessel with NH₃.

A magnetic powder core comprises a molded article of a mixture of a glassy alloy powder and an insulating material. The glassy alloy comprises Fe and at least one element selected from Al, P, C, Si, and B, and has a texture primarily composed of an amorphous phase. The glassy alloy exhibits a temperature difference ΔT_x, which is represented by the equation ΔT_x=T_x−T_g, of at least 20 K in a supercooled liquid, wherein T_x indicates the crystallization temperature and T_g indicates the glass transition temperature. The magnetic core precursor is produced mixing the glassy alloy powder with the insulating material, compacting the mixture to form a magnetic core precursor, and annealing the magnetic core precursor at a temperature in the range between (T_g−170) K and T_g K to relieve the internal stress of the magnetic core precursor. The glassy alloy exhibits low coercive force and low core loss.

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

It is possible to improve significantly the optical performance of diacetal or DBS-based nucleating or clarifying agents using a co-additive. Haze is a measure of the lack of clarity in a thermoplastic or plastic material. A low level of haze is usually quite desirable, and nucleating/clarifying agents are designed to reduce the degree of haze in a plastic or thermoplastic material. A co-additive may be used in connection with a nucleating/clarifying agents in a polymer or copolymer to achieve even greater results in terms of improved clarity (reduced haze), or in terms of a higher crystallization temperature (Tc) of the polymer. A method for reducing haze in polymer articles using a co-additive composition in addition to nucleating and clarifying agents is disclosed.

The invention discloses an AEI/CHA eutectic molecule sieve containing triethylamine. An anhydrous chemical composition of the AEI/CHA eutectic molecule sieve is expressed as mR.(Six.Aly.Pz)O2, wherein x, y and z are molar fractions of Si, Al and P respectively; the x is between 0.001 and 0.98; the y is between 0.01 and 0.6; the z is between 0.01 and 0.6, x+y+z is equal to 1; the R is a template agent, and the m is a mole number of the R; and the value of the m is between 0.02 and 0.6. A preparation method for the AEI/CHA eutectic molecule sieve comprises the following steps: a) according to the mol ratio of oxides of various components, stirring and mixing evenly a silicon source, an aluminum resource, a phosphorus source, the template agent, and water are to obtain an initial gel mixture; and b) transferring the initial gel mixture into a stainless steel synthesis kettle to be sealed, then heating the kettle to a crystallization temperature of between 160 and 250 DEG C, and performing crystallization at constant temperature for 1 to 120 hours under the self-generated pressure, and separating a solid product, washing the solid product to be neutral, and drying the solid product to obtain the AEI/CHA eutectic molecule sieve. The molecule sieve can be used as a catalyst for an acid catalytic reaction after the template agent is removed through the baking.

A method for improving the reliability of a high-k dielectric layer or a high-k dielectric stack by forming an amorphous high-k dielectric layer over an insulating layer, doping the amorphous high-k dielectric layer with nitrogen atoms, and subsequently heating the resulting structure at a temperature greater than or equal to the crystallization temperature of the high-k dielectric material, thereby transforming the high-k dielectric material from an amorphous state to a crystalline state, and causing nitrogen atoms to diffuse into the insulating layer.

The invention relates to a doping modified phase change material and a phase change storage unit containing same and preparation thereof. The formula of the doping modified phase change material is (Sb2Se3)100-xYx, wherein, x is the atom percentage of an element and is more than 0 and less than or equal to 20, and Y is a doped element and is any one of Ni, Cr, Bi, As, Ga, In, Ge, Si, Sn, Ag, Al, C, N and O. The doping modified (Sb2Se3)100-xYx storage material not only remains the advantages of the fast phase change speed and the low melting point of Sb2Se3 storage material, but also increases crystallization temperature, thus overcoming the disadvantage of poor data retentivity of the Sb2Se3 storage material. The phase change storage containing the (Sb2Se3)100-xYx storage material has the advantages of high speed, low power consumption and favorable data retentivity and the like.

The preparation process of ZSM-5 molecular sieve of nanometer size and containing hetero atom includes adding alkali metal salt; adding additive, template agent, one of Al and hetero atoms in certain order and at 60-120 deg.c for mixing with Si source; and crystallization statically or under stirring for 1-15 days. The molecular sieve has crystal grain size of 40-200 nm, and specific surface area of 300-600 sq m/g. The present invention has the advantages of optional static or dynamic synthesizing condition, no-toxic operation, controllable crystal grain size and skeleton hetero atom, various kinds of metal atom, low crystallization temperature and simple operation. The present invention provides some optional materials for developing catalyst with industrial application foreground and has great application value.