171 results about "Dynamic circuit" patented technology

High speed SRAM is realized such that a first dynamic circuit serves as a local sense amp for reading a memory cell through a lightly loaded local bit line, a second dynamic circuit serves as a segment sense amp for reading the local sense amp, and a tri-state inverter serves as an inverting amplifier of a global sense amp for reading the segment sense amp. When reading, a voltage difference in the local bit line is converted to a time difference for differentiating low data and high data by the sense amps for realizing fast access with dynamic operation. Furthermore, a buffered data path is used for achieving fast access and amplify transistor of the sense amps is composed of relatively long channel transistor for reducing turn-off current. Additionally, alternative circuits and memory cell structures for implementing the SRAM are described.

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum, scandium, titanium, vanadium, chrome, manganese, copper, zinc, gold, silver or silicide thereof in a form of island, line, stripe, dot or film on or under an amorphous silicon film and using them as a starting point, by advancing its crystallization by annealing at a temperature lower than a normal crystallization temperature of an amorphous silicon. A transistor whose leak current is low and a transistor in which a mobility is high are obtained in the same time in structuring a dynamic circuit having a thin film transistor by selectively forming a cover film on a semiconductor layer which is to become an active layer of the transistor and by thermally crystallizing it thereafter.

The present invention is a voltage regulator circuit with enhanced frequency compensation. The voltage regulator includes an error amplifier, a dynamic bias circuit, an enhanced frequency compensation unit, a pass device and a compensation circuit. A signal from the pass device acts as an input signal of the error amplifier and is compared with another input signal, producing a differential signal. The differential signal is amplified and then provided to the dynamic circuit and the enhanced frequency compensation unit. The enhanced frequency compensation unit is provided such that a zero reference value in a left-hand plane can be generated to optimize the compensation for the voltage regulator circuit. The error amplifier includes a capacitor for compensating an output voltage of the voltage regulator circuit.

An interlocked pipelined CMOS (IPCMOS) family of logic circuits provides extremely high performance pipelined operation and guarantees error free operation where variations in timing are compensated for automatically by the circuits. The IPCMOS logic circuits also provide a standard interface that makes it possible to interface different macro types easily. The IPCMOS logic circuits feature interlocking in both the forward and reverse directions. This "handshaking" guarantees error free timing and makes it possible to eliminate the need for a global clock at the macro level. Timing signals are generated locally at the macro level from the handshaking signals between macros. This makes it possible for the local circuits to deal with global timing variations caused by power supply noise, ACLV, and parameter variations. The macros operate in a pipelined mode with data advancing automatically from macro to macro with the timing controlled by the local handshaking signals. This pipelined operation results in an extremely fast cycle time. Another feature of IPCMOS is that the data inputs to a macro are only sampled when the data is in a valid state. making the concept of a standard macro interface possible. With this standard interface, different logic types such as static and dynamic circuits can be easily interconnected and the concept of reusable macros becomes a reality.

A current mirror multi-channel leakage monitor circuit and method measures die leakage and generates digital keeper control bits to control a process compensated dynamic circuit. The leakage monitor enables high resolution on-chip leakage measurements in multiple locations on a die, thereby saving test time and enabling both die to die and within die process compensation.

An invention is provided for an adaptive keeper circuit. The adaptive keeper circuit includes a first keeper transistor having a first terminal in electrical communication with a power supply and a second terminal in electrical communication with an internal dynamic node. In addition, a second keeper transistor is included that is configured in parallel to the first keeper transistor. The second keeper transistor also has a first terminal in electrical communication with the power supply. The second keeper transistor can be added to the first keeper transistor using a feedback bit line, which is configured to control current flow between the second keeper transistor and the internal dynamic node based on a state of the feedback bit line. The state of the feedback bit line is based on a process corner characteristic of the die. Additional keeper transistors and corresponding feedback bit lines can be added to the keeper circuit to increase flexibility.

A variable keeper strength based process-compensated dynamic circuit and method provides a robust digital way to overcome the intrinsic parameter variation present in manufactured die. Using a process-compensated dynamic circuit, the wide robustness and delay distribution becomes narrower which improves performance without sacrificing worst-case robustness. The strength of the keeper is programmed depending on the amount of die leakage. The keeper will have an optimal strength for the best and worst case leakage, allowing better performance with improved worst-case robustness.

Low power carbon nanotube memory is realized such that a first dynamic circuit serves as a local sense amp for reading a memory cell through a lightly loaded local bit line, a second dynamic circuit serves as a segment sense amp for reading the local sense amp, a first tri-state inverter serves as an inverting amplifier of a global sense amp, and a second tri-state inverter serves as a bypass circuit for bypassing output from previous memory block. When reading, a voltage difference in the local bit line is converted to a time difference for differentiating high data and low data by the sense amps for realizing low power with dynamic operation. In particular, amplify transistor of the sense amps is composed of relatively long channel transistor for reducing turn-off current. And buffered data path is used for achieving fast data transfer. Additionally, alternative circuits and memory cell structures are described.

A system and method is provided for scan control and observation of a logical circuit that does not halt the operation of the system clock. Thus, all dynamic circuits within the system continue to evaluate and precharge normally. Moreover, the traditional method of placing a multiplexer before the data input of a clocked storage element to perform scan control and observation is no longer required. Consequently, the system and method provide a more efficient manner in which to perform scan control and observation of a logical circuit.

A circuit for dynamically monitoring the operation of an integrated circuit under differing temperature, frequency, and voltage (including localized noise and droop), and for detecting early life wear-out mechanisms (e.g., NBTI, hot electrons).

An invention is disclosed for a process monitor based keeper scheme for dynamic circuits. A semiconductor die having a process monitor based keeper scheme of the embodiments of the present invention generally includes a plurality of dynamic circuits, each having an adaptive keeper circuit capable of being adjusted based on a bit code. In addition, a plurality of process monitors is included. Each process monitor is disposed within a corresponding die block, which defines a local area of the die. The process monitors are capable of detecting process corner data for the corresponding die block. In communication with each process monitor and the plurality of dynamic circuits is a test processor unit. The test processor unit obtains process corner data for each die block from the process monitor disposed within the die block, and provides a bit code based on the process corner data to the dynamic circuits disposed within the die block.

A system and method is disclosed for designing a dynamic circuit in a silicon-on-insulator (SOI) process comprising the steps of representing the dynamic circuit using at least one logic circuit, wherein the at least one logic circuit is selected from a group consisting of: an OR circuit with a DNG field effect transistor (FET), an OR circuit, and an AND circuit, and wherein the at least one logic circuit is selected according to body voltage characteristics of each circuit in the group.