The invention relates to the technical field of
DRAM (
Dynamic Random Access Memory)
circuit design, in particular to a sensitive
amplifier, a reading circuit and a module based on
capacitance and flip point compensation. The invention discloses a sensitive
amplifier based on capacitors and flip point compensation. The sensitive
amplifier comprises nine NMOS (N-channel
Metal Oxide Semiconductor) tubes M1-M9, two PMOS (P-channel
Metal Oxide Semiconductor) tubes P1-P2 and two capacitors C1-C2. According to the invention, the CSCSA is designed, and corresponding
control logic is matched, so that a pre-charging stage, an offset
elimination stage, a
charge sharing stage, a pre-sensing stage and an induction amplification stage are designed when the
DRAM storage unit is read, the potential of a
bit line BL or BLB can be correctly changed, and the reading amplification function of the CSCSA is ensured. Compared with the traditional
DRAM sensitive amplifier, the CSCSA provided by the invention has the advantages that the offset
voltage index is greatly reduced and the sensing yield is improved under the condition that the quantity of elements is not greatly increased.