140 results about "Semiconductor detector" patented technology

The invention belongs to the technical field of semiconductor detectors, and particularly relates to a whole process simulation method and system for response of a semiconductor nuclear radiation detector. According to the method, through cooperative operation of a detector working parameter setting module, a carrier transport simulation module and a detection system electronics response module, whole-process response prediction of the semiconductor detector from radiation interaction to electronics output can be realized under different carrier transport characteristics and device structure conditions; according to the method, the carrier drift process is simulated in a small-step iteration mode, accurate reconstruction of a carrier drift track can be synchronously achieved, CSA signals and main amplifier forming signals can be continuously generated in real time, simulation output of an energy spectrum is finally completed, and therefore core performance indexes of a detector are comprehensively reflected. The method is wide in applicable semiconductor material range and device structure, the main amplifier module type can be flexibly configured, the overall simulation process is simple, convenient and efficient, and the method has good universality and engineering application value.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The invention provides a semiconductor detector particle pulse waveform data generation and analysis platform based on a digital twinning technology, and the platform comprises an automatic full-link multi-working-condition semiconductor detector particle pulse waveform simulation system which is used for controlling GEANT4, Weightfield2 and PyLTSPICE software, and outputting simulated energy data and differential current data; the dual-channel pulse waveform automatic acquisition system is used for acquiring and storing energy data and current data actually measured by the accelerator by using a physical entity and performing multi-channel display; and the digital twinborn and physical twinborn data comparison and analysis system is used for performing waveform matching degree analysis by utilizing the actually measured waveform of the accelerator and the simulation waveform under the same working condition and the same circuit parameter. The method has the advantage that mass pulse waveform data under different working conditions can be efficiently and automatically generated.

It is therefore the objective of the present invention to provide a system and a method for 2D and 3D density imaging using atmospheric ( cosmic) particles, in particular muons, that offer a wide range of detection abilities. This objective is achieved according to the present invention by a detection system for 2D and 3D density imaging of an object using atmospheric (cosmic) particles, in particular muons, penetrating said object, comprising the following components : i ) a particle detection subsystem ( PDS ) comprising a particle detection apparatus; said particle detection apparatus comprising a plurality of monolithic active semiconductor diode detection layers, preferably a plurality of depleted monolithi active semiconductor diode detection layers, said layers extending along a detection axis that corresponds to an axis of interest in terms of the direction of incoming particles after the penetration of the object; and ii ) an evaluation subsystem being enabled to determine the special and temporal detection of the collision events of the particles within the various (depleted) monolithic active semiconductor diode detection layers thereby enabling the evaluation subsystem to determine the direction and the time of the incoming particles. Therefore, the present invention provides for the novel use of semiconductor (D) MAPS in a very high resolution and simplified ( integrated) muon radiography system. Multiple layers of semiconductor pixel or strip detectors are combined to construct a low-power portable muon radiography system. The various monolithic semiconductor diode layers of a semiconductor detector allow for reconstruction of the particle trajectories and use the angular information to measure the amount of matter traversed by particles coming from different angles.

The disclosed flow cytometer includes a wavelength division multiplexer (WDM). The WDM includes an extended light source providing light that forms an object, a collimating optical element that captures light from the extended light source and projects a magnified image of the object as a first light beam, and a first focusing optical element configured to focus the first light beam to a size smaller than the object of the extended light source to a first semiconductor detector. The disclosed flow cytometer further includes a composite microscope objective to direct light emitted by a particle in a flow channel in a viewing zone of the composite microscope to the extended light source, a fluidic system and a peristaltic pump configured to supply liquid sheath and liquid sample to the flow channel, and a laser diode system to illuminate the particle in the flow channel.

The present invention relates to a miniaturized spaceborne high-energy particle detection device and method based on a silicon detector module. The detection device comprises a silicon detector module, a trigger circuit, a differential amplifier circuit, an ADC sampling circuit, an FPGA processor, a data storage unit, a data communication interface, a power conversion circuit, and a sensor bias circuit. The silicon detector module comprises a silicon semiconductor detector and a front-end preprocessing circuit arranged on the same printed circuit board. The silicon semiconductor detector converts received space charged particles into charge signals reflecting particle deposition energy, and the front-end preprocessing circuit converts the charge signals into fast and slow forming pulse signals. The trigger converts the fast forming pulse signal into a trigger signal. The differential amplifier converts the slow forming pulse signal into a differential signal. The ADC collector converts the differential signal output by the differential amplifier into a digital signal. The FPGA processor processes the digital signal output by the ADC collector and converts it into space particle energy spectrum and flux information.

The disclosure relates to an apparatus for measuring Radon progeny. The apparatus moves air through a filter and thereby collects Radon progeny on the filter and detects radiation from the collected progeny using a semiconductor detector. The apparatus might use a filter that is permanently attached to a filter holder, which aids in miniaturizing the detection system. The apparatus might determine the equivalent equilibrium Radon concentration and possibly the Radon concentration. The apparatus is suited for measuring Radon relatively fast. The disclosure also relates to a method for measuring Radon using the apparatus, where a measurement is performed at a place where air movement is unlikely.

A coincidence technique-based X-ray detection device and composition analysis method are provided, wherein the X-ray detection device includes: a sample holding device; an excitation unit for outputting X-rays with continuously adjustable energy; detectors comprising two SiC semiconductor detectors and two SiPIN semiconductor detectors; a signal processing unit for performing amplification, analog-to-digital conversion and classification on the detected signals to obtain energy information; a data processing device connected to the signal processing unit and used for analysis and calculation according to the energy information and determining element type and content of the sample to be tested, wherein the data processing device comprises a processor and a memory, the processor is used for executing following program modules stored in the memory: a storage module, a baseline recovery module, a calibration curve construction module, an extraction module, an effective energy information determination module, and a peak comparison module.

The disclosed flow cytometer includes a wavelength division multiplexer (WDM). The WDM includes an extended light source providing light that forms an object, a collimating optical element that captures light from the extended light source and projects a magnified image of the object as a first light beam, and a first focusing optical element configured to focus the first light beam to a size smaller than the object of the extended light source to a first semiconductor detector. The disclosed flow cytometer further includes a composite microscope objective to direct light emitted by a particle in a flow channel in a viewing zone of the composite microscope to the extended light source, a fluidic system and a peristaltic pump configured to supply liquid sheath and liquid sample to the flow channel, and a laser diode system to illuminate the particle in the flow channel.

The invention relates to the technical field of semiconductor detectors, in particular to a gallium oxide mixed-phase thin film, an ultraviolet detector and a preparation method of the gallium oxide mixed-phase thin film. The gallium oxide mixed-phase thin film is doped with 5-15 at% of zinc, and the crystal phases comprise two crystal phases, namely beta-Ga2O3 of a monoclinic system and epsilon-Ga2O3 of a hexagonal system; the preparation method comprises the following steps: cleaning a substrate; the substrate tray is heated to 500 DEG C to 950 DEG C, and the internal pressure is kept at 1000 Pa to 2000 Pa; introducing high-purity nitrogen; a zinc organic source and a gallium organic source are introduced in an equal proportion every 5-30 min, and the condition is kept for 20-50 min after the final gas carrying capacity is achieved; slowly introducing high-purity oxygen until the flow rate of the oxygen reaches 500-1000sccm and is constant, and slowly growing zinc-doped Ga2O3; and growing for 80-150 minutes to obtain the gallium oxide mixed phase thin film. The invention has the advantages of high stability, good robustness and enhanced light response in the device.

The invention belongs to the technical field of radiation detection, and particularly relates to a radiation dose distribution detection device and method when rays pass through a human body, a liquid conveying device conveys a human tissue density simulation liquid to a set liquid level of a detection chamber, and a ray beam passes through the simulation liquid in the detection chamber; a semiconductor detector array with X-ray and proton beam dual-mode detection capability is emitted, the intensity of ray beams emitted from a detection chamber is converted into corresponding output electric signals, then radiation dose distribution conditions when rays enter a human body at different depths are obtained, and visual display is carried out through a three-dimensional gray level image. Based on the same inventive concept, the invention also provides a medium and a system which store a program of the method, and also provides a method for tracking a focus during precise treatment of the proton beam, and the method realizes X-ray real-time monitoring and linkage proton beam parameter regulation and control by utilizing radiation dose distribution of rays extracted by the device in human tissues. The method has the advantages of accurate irradiation positioning, efficient detection, stability, reliability and the like.

The invention discloses a multi-ball neutron spectrometer applied to pulsed neutron radiation field monitoring. The multi-ball neutron spectrometer comprises a 3He gas detector, a 4H-SiC semiconductor detector, a neutron moderation ball, a preamplifier, a spectrometer main amplifier, a high-voltage power supply and a multichannel analyzer. A 3He gas detector and a 4H-SiC semiconductor detector are designed in a neutron moderator of a set of multi-sphere neutron spectrometer, the double-detector multi-sphere neutron spectrometer is applied in pulsed neutron radiation fields, and neutron energy spectrum and dose measurement is carried out in the pulsed neutron radiation fields with the neutron flux of 101-104 n.cm <-2 > s <-1 > and the neutron flux of 103-106 n.cm <-2 > s <-1 > respectively. According to the invention, a dual-detector multi-ball neutron spectrometer data acquisition system based on a 3He gas detector and a 4H-SiC semiconductor detector is utilized to realize measurement of neutron energy spectrum distribution information and neutron dose in a wide energy region.

The invention provides a while-drilling radioactive logging system, a logging method and a drilling tool assembly, and belongs to the technical field of oil-gas exploration, and the system comprises at least one perovskite semiconductor detector which is used for directly absorbing gamma rays from a stratum and generating corresponding electric pulse signals; the electronics module is electrically connected with the perovskite semiconductor detector and used for processing the electric pulse signal to obtain while-drilling radioactive logging data, and the while-drilling radioactive logging data comprises at least one of natural gamma counting data, natural gamma energy spectrum data and gamma-gamma density data; the protection packaging body comprises a metal shock-resistant and high-pressure-resistant shell, a heat insulation and heat preservation layer and a heat channel which are arranged in the metal shock-resistant and high-pressure-resistant shell, and a high shock-resistant and impact-resistant connecting piece for fixing internal devices, and the protection packaging body is used for accommodating the perovskite semiconductor detector and the electronics module; and the safety and the accuracy of radioactive logging while drilling are improved.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The invention discloses a circuit board detection system, which comprises a main control device and at least one detection device in communication connection with the main control device, the detection device is used for detecting a plurality of detection items of a plurality of board cards, different board cards correspond to different detection boards, and the main control device is used for performing data interaction with the detection device through a specified communication mode. The server is further used for analyzing a switching instruction when receiving the board card switching instruction and sending a switching signal for replacing the detection board based on the switching instruction, and the switching signal comprises at least one of a communication mode, a name of a to-be-detected board card, an identification code of the to-be-detected board card and a detection parameter corresponding to the to-be-detected board card; the detection equipment is used for receiving the switching signal and switching a current board into a detection board based on the switching signal so as to detect the board card to be detected by using the detection board, and the detection equipment comprises at least one of a solder paste detector, an automatic optical detector, a coating detector, a semiconductor detector and a substrate detector; the switching efficiency and the switching accuracy of the detection plate type are improved.

The invention provides an atmospheric semiconductor detector and a manufacturing process thereof, and relates to the field of semiconductor detectors. The invention provides a process manufacturing flow of a front-end module. Secondly, the invention provides the front-end module prepared by the process manufacturing flow described in the first aspect of the invention. The invention further provides an atmospheric semiconductor detector which comprises the front-end module in the second aspect of the invention. The invention further provides a use of the front-end module as described in the second aspect of the invention as a detection element of the atmospheric semiconductor detector as described in the third aspect of the invention. In the fifth aspect, the invention provides an assembling method of the atmosphere type semiconductor detector in the third aspect. The frame refresh rate of the atmospheric semiconductor detector provided by the invention is greater than or equal to 1kHz, the dynamic range is greater than or equal to 104ph. / pixel / pulse (at) 12keV, the atmospheric semiconductor detector has single photon sensitivity, S / N is greater than or equal to 5 (at) 12keV, the pixel size is less than or equal to 200 microns * 200 microns, the number of pixels is greater than or equal to 65536, the sensitive area is greater than or equal to 2.5 cm * 10.2 cm, the quantum efficiency is greater than or equal to 80% (at) 12keV, and the response energy region is 6keV-20keV.

The invention discloses a data analysis system and method based on a semiconductor detector, and relates to the technical field of data analysis, and the analysis method comprises the following steps: constructing a detection data management platform to receive detection data and environment data collected by the semiconductor detector, and generating a corresponding detection record; carrying out multi-dimensional evaluation on the detection data stored in any detection record and carrying out anomaly identification; feature extraction is carried out on the detection data of each dimension, and radiation types existing in detection records are identified; carrying out difference analysis on the detection records of any abnormal identification, and extracting abnormal factors influencing various radiation types; setting corresponding anomaly evaluation thresholds for different radiation types; generating a real-time detection record for the semiconductor detector in real time, and performing anomaly evaluation on the real-time detection record; and calling a corresponding abnormal evaluation threshold value from the real-time detection record, and judging whether risk early warning is carried out or not.

The application discloses a capacitor measurement circuit and a capacitor measurement method, and belongs to the field of semiconductors. The capacitor measurement circuit can accurately measure the junction capacitance of a semiconductor detector (a device to be measured) in real time and on line while applying thousands of volts of direct-current working voltage to the semiconductor detector by coupling an alternating-current test signal in a high-voltage bias loop and directly responding to charge changes by using a detection module, so that the measurement result truly reflects the capacitance characteristics of the device under the actual high-voltage working state. The entire circuit adopts a topology combining alternating-current injection and charge detection, effectively isolates the influence of high-voltage direct current on the precision detection circuit, guarantees high measurement precision and a signal-to-noise ratio, has good electrical safety, and is also compatible with the capacitor measurement demand under conventional low-voltage or zero-bias conditions, thereby improving the universality and application flexibility of the circuit.

The invention discloses a hybrid photomultiplier coaxial output structure based on a microstrip line. The hybrid photomultiplier coaxial output structure comprises a semiconductor detector, a bonding wire, the microstrip line, a ground electrode, a lead pin, a medium, an outer conductor base and a detector lead pin. The semiconductor detector is used for receiving the photoelectrons converted by the photoelectric cathode and generating a current signal; the bonding wire is used for electrically connecting the semiconductor detector and the microstrip structure; the microstrip line and the ground electrode adopt gold-plated kovar alloy parts to form an in-tube microstrip structure; the guide pin and the detector guide pin are kovar alloy guide pins and form an inner conductor with a coaxial structure; the outer conductor base is a kovar alloy disc and forms an outer conductor with a coaxial structure; the medium is glass or ceramic. According to the coaxial output structure, a vacuum tube is of a 50-ohm microstrip structure, the exterior of the vacuum tube is of a 50-ohm SMA coaxial structure, and a complete 50-ohm coaxial line is formed by connecting a microstrip line and a guide pin together. The structure provided by the invention has the advantages of high transmission speed, small signal reflection and oscillation and the like, and is more beneficial to detection of ultrafast optical pulse signals.

A detector system (1) for molecular imaging of a radionuclide comprises a 3D semiconductor detector (100) comprising a plurality of sensor stacks (110) of sensors (120) made of a semiconductor material having an average atomic number Z below 40 A read-out circuitry (!26) connected to the pixels (125) is configured to output, for each interaction induced by an incident gamma ray in the detector (100), a signal representative of a time, a position and an energy of the interaction in the detector (100). The interactions in the detector (100) belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The utility model relates to an objective table for a semiconductor detector, and relates to the technical field of detection object carrying, the objective table comprises a table body and a first moving frame, the table body is slidably arranged on the first moving frame, the first moving frame is provided with a first moving motor, the first moving frame is rotatably provided with a first moving screw rod, and the first moving screw rod is provided with a second moving motor. The first moving frame is slidably provided with a first moving block, the first moving block is connected with the table body, the first moving lead screw penetrates through the first moving block and is in threaded connection with the first moving block, and a rotating shaft of the first moving motor is connected with the first moving lead screw. The application has the effect of improving the use convenience.

The invention discloses a uranium layer thickness uniformity measuring and calculating method, which relates to the technical field of nuclear physical detection, and comprises the following steps: measuring the whole uranium layer on the surface of an electrode, firstly measuring the alpha particle emissivity of the whole surface of the electrode and a measured unit through a semiconductor detector, and then calculating to obtain the thickness uniformity of the uranium layer on the surface of the electrode. In the whole testing process, the semiconductor detector does not make contact with the electrodes, the uranium layer cannot be damaged, the semiconductor detector is high in precision and accurate in measurement result, and the uranium layer thickness uniformity can be reflected by the calculation result of the uranium layer thickness uniformity deviation coefficient. The invention further provides a uranium layer thickness uniformity measuring device which is applied to the uranium layer thickness uniformity measuring and calculating method, the alpha particles released by the uranium layer can be measured under the non-contact condition, the emissivity of the alpha particles is directly obtained, and data are provided for the uranium layer thickness uniformity deviation coefficient.

The invention provides a vacuum type large-panel semiconductor detector, and relates to the field of semiconductor detectors. The detector comprises a detector cavity, a front end plate and a rear end plate which are detachably connected with the detector cavity are arranged at the two ends of the detector cavity respectively, a vacuum adapter plate is arranged on the end face, facing the exterior of the detector cavity, of the front end plate, and the vacuum adapter plate is used for being connected with an external sample cavity body; the vacuum adapter plate is provided with a front panel, the front panel is provided with a beam through hole and a plurality of front-end modules, and the beam through hole is located between two adjacent front-end modules; the vacuum type large-panel semiconductor detector further comprises a beam tube, one end of the beam tube is arranged in the vacuum adapter plate and communicated with the beam through hole, and the other end of the beam tube penetrates out of the rear end plate. And a rear-end electronic component is also arranged in the inner cavity of the detector cavity. According to the invention, a signal with a higher scattering angle can be collected, so that the ultimate resolution of structural analysis of a coherent diffraction experiment is improved.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

A semiconductor detector (100) for electromagnetic radiation within a wavelength range is disclosed, comprising a first waveguide portion (110), a funnel element (130) configured to funnel incident electromagnetic radiation into a first end (112) of the first waveguide portion, and a second waveguide portion (120) extending in parallel with the first waveguide portion. The second waveguide portion is coupled to the first waveguide portion and configured to out-couple electromagnetic radiation from the first waveguide portion, within a sub-range of the wavelength range. Further, a photodetector (140) including a photoactive layer (144) is arranged at a second end (114) of the first waveguide portion and at an end (124) of the second waveguide portion, and configured to separately detect electromagnetic radiation transmitted through and exiting the first waveguide portion and the second waveguide portion.

A method includes applying a first voltage to a source of a first transistor of a detection unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detection unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detection unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detection unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

In an embodiment a semiconductor detector includes a radiation entry side, a semiconductor body having an implantation region at a main surface facing the radiation entry side, the implantation region being configured to be contacted by a first electrical potential, and an insulator arranged between the radiation entry side and the semiconductor body, the insulator being configured to be contacted by a second electrical potential such that an inversion region is formed in the semiconductor body, wherein the inversion region is arranged in a recess formed in the implantation region and confined by the implantation region, and wherein an area fraction of the recess on a total area of the implantation region is between 0.01% and 4%, inclusive.

The invention provides an atmospheric large-panel semiconductor detector, and relates to the field of semiconductor detectors. The device comprises a bottom plate, a shielding box, a front panel and a back plate are arranged on the bottom plate, and the front panel and the back plate are detachably connected with the two ends of the shielding box respectively; the front panel is also provided with a plurality of front-end modules. The shielding box is internally provided with a rear-end electronic assembly. The front-end module penetrates through the front panel through a cable to be connected with the rear-end electronic assembly, and the rear-end electronic assembly penetrates through the backboard through a cable to be connected with an external data acquisition system. The atmospheric large-panel semiconductor detector provided by the invention can collect signals with a higher scattering angle, thereby improving the ultimate resolution of structural analysis of a coherent diffraction experiment.

The invention belongs to the technical field of semiconductor detectors, and particularly relates to a detector and a preparation method thereof. The problems that an existing detector integrated structure is low in wafer area utilization rate, crosstalk noise between a circuit and a detector is high, thermal resistance is high, and a heterogeneous integration process of a sensor and a reading circuit needs to be developed are solved. A detector includes: a substrate; the readout circuit layer is arranged on the front surface of the substrate; the detector array layer is arranged on the back surface of the substrate; and the interconnection structure is positioned in the substrate and is electrically connected with the detector array layer and the readout circuit layer. The detector realizes high-performance detection, high-efficiency heat dissipation and compatibility with a standard process at the same time under the condition of high integration level.