81 results about "Semiconductor detector" patented technology

The invention belongs to the technical field of semiconductor detectors, and particularly relates to a whole process simulation method and system for response of a semiconductor nuclear radiation detector. According to the method, through cooperative operation of a detector working parameter setting module, a carrier transport simulation module and a detection system electronics response module, whole-process response prediction of the semiconductor detector from radiation interaction to electronics output can be realized under different carrier transport characteristics and device structure conditions; according to the method, the carrier drift process is simulated in a small-step iteration mode, accurate reconstruction of a carrier drift track can be synchronously achieved, CSA signals and main amplifier forming signals can be continuously generated in real time, simulation output of an energy spectrum is finally completed, and therefore core performance indexes of a detector are comprehensively reflected. The method is wide in applicable semiconductor material range and device structure, the main amplifier module type can be flexibly configured, the overall simulation process is simple, convenient and efficient, and the method has good universality and engineering application value.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

It is therefore the objective of the present invention to provide a system and a method for 2D and 3D density imaging using atmospheric ( cosmic) particles, in particular muons, that offer a wide range of detection abilities. This objective is achieved according to the present invention by a detection system for 2D and 3D density imaging of an object using atmospheric (cosmic) particles, in particular muons, penetrating said object, comprising the following components : i ) a particle detection subsystem ( PDS ) comprising a particle detection apparatus; said particle detection apparatus comprising a plurality of monolithic active semiconductor diode detection layers, preferably a plurality of depleted monolithi active semiconductor diode detection layers, said layers extending along a detection axis that corresponds to an axis of interest in terms of the direction of incoming particles after the penetration of the object; and ii ) an evaluation subsystem being enabled to determine the special and temporal detection of the collision events of the particles within the various (depleted) monolithic active semiconductor diode detection layers thereby enabling the evaluation subsystem to determine the direction and the time of the incoming particles. Therefore, the present invention provides for the novel use of semiconductor (D) MAPS in a very high resolution and simplified ( integrated) muon radiography system. Multiple layers of semiconductor pixel or strip detectors are combined to construct a low-power portable muon radiography system. The various monolithic semiconductor diode layers of a semiconductor detector allow for reconstruction of the particle trajectories and use the angular information to measure the amount of matter traversed by particles coming from different angles.

The invention provides a while-drilling radioactive logging system, a logging method and a drilling tool assembly, and belongs to the technical field of oil-gas exploration, and the system comprises at least one perovskite semiconductor detector which is used for directly absorbing gamma rays from a stratum and generating corresponding electric pulse signals; the electronics module is electrically connected with the perovskite semiconductor detector and used for processing the electric pulse signal to obtain while-drilling radioactive logging data, and the while-drilling radioactive logging data comprises at least one of natural gamma counting data, natural gamma energy spectrum data and gamma-gamma density data; the protection packaging body comprises a metal shock-resistant and high-pressure-resistant shell, a heat insulation and heat preservation layer and a heat channel which are arranged in the metal shock-resistant and high-pressure-resistant shell, and a high shock-resistant and impact-resistant connecting piece for fixing internal devices, and the protection packaging body is used for accommodating the perovskite semiconductor detector and the electronics module; and the safety and the accuracy of radioactive logging while drilling are improved.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The invention discloses a circuit board detection system, which comprises a main control device and at least one detection device in communication connection with the main control device, the detection device is used for detecting a plurality of detection items of a plurality of board cards, different board cards correspond to different detection boards, and the main control device is used for performing data interaction with the detection device through a specified communication mode. The server is further used for analyzing a switching instruction when receiving the board card switching instruction and sending a switching signal for replacing the detection board based on the switching instruction, and the switching signal comprises at least one of a communication mode, a name of a to-be-detected board card, an identification code of the to-be-detected board card and a detection parameter corresponding to the to-be-detected board card; the detection equipment is used for receiving the switching signal and switching a current board into a detection board based on the switching signal so as to detect the board card to be detected by using the detection board, and the detection equipment comprises at least one of a solder paste detector, an automatic optical detector, a coating detector, a semiconductor detector and a substrate detector; the switching efficiency and the switching accuracy of the detection plate type are improved.

The invention provides an atmospheric semiconductor detector and a manufacturing process thereof, and relates to the field of semiconductor detectors. The invention provides a process manufacturing flow of a front-end module. Secondly, the invention provides the front-end module prepared by the process manufacturing flow described in the first aspect of the invention. The invention further provides an atmospheric semiconductor detector which comprises the front-end module in the second aspect of the invention. The invention further provides a use of the front-end module as described in the second aspect of the invention as a detection element of the atmospheric semiconductor detector as described in the third aspect of the invention. In the fifth aspect, the invention provides an assembling method of the atmosphere type semiconductor detector in the third aspect. The frame refresh rate of the atmospheric semiconductor detector provided by the invention is greater than or equal to 1kHz, the dynamic range is greater than or equal to 104ph. / pixel / pulse (at) 12keV, the atmospheric semiconductor detector has single photon sensitivity, S / N is greater than or equal to 5 (at) 12keV, the pixel size is less than or equal to 200 microns * 200 microns, the number of pixels is greater than or equal to 65536, the sensitive area is greater than or equal to 2.5 cm * 10.2 cm, the quantum efficiency is greater than or equal to 80% (at) 12keV, and the response energy region is 6keV-20keV.

The application discloses a capacitor measurement circuit and a capacitor measurement method, and belongs to the field of semiconductors. The capacitor measurement circuit can accurately measure the junction capacitance of a semiconductor detector (a device to be measured) in real time and on line while applying thousands of volts of direct-current working voltage to the semiconductor detector by coupling an alternating-current test signal in a high-voltage bias loop and directly responding to charge changes by using a detection module, so that the measurement result truly reflects the capacitance characteristics of the device under the actual high-voltage working state. The entire circuit adopts a topology combining alternating-current injection and charge detection, effectively isolates the influence of high-voltage direct current on the precision detection circuit, guarantees high measurement precision and a signal-to-noise ratio, has good electrical safety, and is also compatible with the capacitor measurement demand under conventional low-voltage or zero-bias conditions, thereby improving the universality and application flexibility of the circuit.

The invention discloses a hybrid photomultiplier coaxial output structure based on a microstrip line. The hybrid photomultiplier coaxial output structure comprises a semiconductor detector, a bonding wire, the microstrip line, a ground electrode, a lead pin, a medium, an outer conductor base and a detector lead pin. The semiconductor detector is used for receiving the photoelectrons converted by the photoelectric cathode and generating a current signal; the bonding wire is used for electrically connecting the semiconductor detector and the microstrip structure; the microstrip line and the ground electrode adopt gold-plated kovar alloy parts to form an in-tube microstrip structure; the guide pin and the detector guide pin are kovar alloy guide pins and form an inner conductor with a coaxial structure; the outer conductor base is a kovar alloy disc and forms an outer conductor with a coaxial structure; the medium is glass or ceramic. According to the coaxial output structure, a vacuum tube is of a 50-ohm microstrip structure, the exterior of the vacuum tube is of a 50-ohm SMA coaxial structure, and a complete 50-ohm coaxial line is formed by connecting a microstrip line and a guide pin together. The structure provided by the invention has the advantages of high transmission speed, small signal reflection and oscillation and the like, and is more beneficial to detection of ultrafast optical pulse signals.

A detector system (1) for molecular imaging of a radionuclide comprises a 3D semiconductor detector (100) comprising a plurality of sensor stacks (110) of sensors (120) made of a semiconductor material having an average atomic number Z below 40 A read-out circuitry (!26) connected to the pixels (125) is configured to output, for each interaction induced by an incident gamma ray in the detector (100), a signal representative of a time, a position and an energy of the interaction in the detector (100). The interactions in the detector (100) belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The utility model relates to an objective table for a semiconductor detector, and relates to the technical field of detection object carrying, the objective table comprises a table body and a first moving frame, the table body is slidably arranged on the first moving frame, the first moving frame is provided with a first moving motor, the first moving frame is rotatably provided with a first moving screw rod, and the first moving screw rod is provided with a second moving motor. The first moving frame is slidably provided with a first moving block, the first moving block is connected with the table body, the first moving lead screw penetrates through the first moving block and is in threaded connection with the first moving block, and a rotating shaft of the first moving motor is connected with the first moving lead screw. The application has the effect of improving the use convenience.

The invention provides a vacuum type large-panel semiconductor detector, and relates to the field of semiconductor detectors. The detector comprises a detector cavity, a front end plate and a rear end plate which are detachably connected with the detector cavity are arranged at the two ends of the detector cavity respectively, a vacuum adapter plate is arranged on the end face, facing the exterior of the detector cavity, of the front end plate, and the vacuum adapter plate is used for being connected with an external sample cavity body; the vacuum adapter plate is provided with a front panel, the front panel is provided with a beam through hole and a plurality of front-end modules, and the beam through hole is located between two adjacent front-end modules; the vacuum type large-panel semiconductor detector further comprises a beam tube, one end of the beam tube is arranged in the vacuum adapter plate and communicated with the beam through hole, and the other end of the beam tube penetrates out of the rear end plate. And a rear-end electronic component is also arranged in the inner cavity of the detector cavity. According to the invention, a signal with a higher scattering angle can be collected, so that the ultimate resolution of structural analysis of a coherent diffraction experiment is improved.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

In an embodiment a semiconductor detector includes a radiation entry side, a semiconductor body having an implantation region at a main surface facing the radiation entry side, the implantation region being configured to be contacted by a first electrical potential, and an insulator arranged between the radiation entry side and the semiconductor body, the insulator being configured to be contacted by a second electrical potential such that an inversion region is formed in the semiconductor body, wherein the inversion region is arranged in a recess formed in the implantation region and confined by the implantation region, and wherein an area fraction of the recess on a total area of the implantation region is between 0.01% and 4%, inclusive.

The invention provides an atmospheric large-panel semiconductor detector, and relates to the field of semiconductor detectors. The device comprises a bottom plate, a shielding box, a front panel and a back plate are arranged on the bottom plate, and the front panel and the back plate are detachably connected with the two ends of the shielding box respectively; the front panel is also provided with a plurality of front-end modules. The shielding box is internally provided with a rear-end electronic assembly. The front-end module penetrates through the front panel through a cable to be connected with the rear-end electronic assembly, and the rear-end electronic assembly penetrates through the backboard through a cable to be connected with an external data acquisition system. The atmospheric large-panel semiconductor detector provided by the invention can collect signals with a higher scattering angle, thereby improving the ultimate resolution of structural analysis of a coherent diffraction experiment.

The invention belongs to the technical field of semiconductor detectors, and particularly relates to a detector and a preparation method thereof. The problems that an existing detector integrated structure is low in wafer area utilization rate, crosstalk noise between a circuit and a detector is high, thermal resistance is high, and a heterogeneous integration process of a sensor and a reading circuit needs to be developed are solved. A detector includes: a substrate; the readout circuit layer is arranged on the front surface of the substrate; the detector array layer is arranged on the back surface of the substrate; and the interconnection structure is positioned in the substrate and is electrically connected with the detector array layer and the readout circuit layer. The detector realizes high-performance detection, high-efficiency heat dissipation and compatibility with a standard process at the same time under the condition of high integration level.

To provide a semiconductor detector capable of controlling a gain independently of a response speed.SOLUTION: The semiconductor detector 1 includes a first semiconductor region 11, a plurality of second semiconductor regions 14, an electrode 21, a plurality of electrodes 15, an electrode 13, and a circuit 30. The plurality of second regions 14 are formed on a first direction side D1 of the first region 11, and are provided side by side on a second direction side D1 intersecting the first direction side D2. The electrode 21 is connected to the first semiconductor region 11. The multiple electrodes 15 are connected respectively to the multiple second semiconductor regions 14. The circuit 30 applies a voltage to each of the electrode 21, the electrode 15, and the electrode 13. The first region 11 has a groove 112 located between the plurality of second regions 14 when viewed from the D1 in the first direction. The electrode 13 is disposed in the groove 112 and faces the first semiconductor region 11. The circuit 30 sets the potential of the electrode 13 to a magnitude between the potential of the electrode 21 and the potentials of the multiple electrodes 15.SELECTED DRAWING: Figure 1

To provide a method for testing a semiconductor sensor of a gamma camera.SOLUTION: In order to test or manufacture a semiconductor-based detector in SPECT, an interposer 106, such as an elastomer device with a conductor, is sandwiched between a carrier and a semiconductor detector, the conductor enables temporary, separate connection of a detector electrode to a signal processing circuit, to test the detector operating using the signal processing circuit, and the interposer 106 provides separate electrical connection for testing.SELECTED DRAWING: Figure 1

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The invention, which relates to the technical field of heat dissipation packaging, discloses a heat dissipation packaging module of a semiconductor detector, comprising a DBC substrate and a heat dissipation module. The semiconductor detector comprises a pixel type detection sensor, a connector and a plurality of processor chips which are adaptively connected, the pixel type detection sensor is arranged on the front surface of the DBC substrate, and the connector and the plurality of processor chips are arranged on the back surface of the DBC substrate; a first boss, a second boss and a plurality of protruding blocks located between the first boss and the second boss are arranged on the front face of the heat dissipation module, and the heat dissipation module is connected with the back face of the DBC substrate through the first boss, the second boss and the protruding blocks. The heat dissipation packaging structure has good heat dissipation capability, and can better meet the heat dissipation requirement when the pixel type detector module works.

The present application relates to a kind of space particle detector based on silicon detector module and its detection method, comprising: silicon detector module, main amplifier, ADC collector and FPGA processor;Wherein, the silicon detector module includes: a piece of silicon semiconductor detector and ASIC device mounted on the same printed board;The ASIC device includes: charge preamplification module, fast shaping circuit and slow shaping circuit.The detection device of the present application adopts silicon detector module, and integrates silicon semiconductor detector and ASIC device, with charge signal amplification, fast / slow voltage pulse signal shaping function;It can also measure the energy spectrum and flux of charged particles;And, through ASIC module and differential amplifier circuit, the consistency of voltage signal input / output linearity is improved;When used for space charged particle measurement, through the high integration and shielding structure design of silicon detector module, the low noise, high integration requirement of space particle detector is reached, and the signal-to-noise ratio is improved.

This invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation, belonging to the field of satellite space environment analysis technology. The method includes: S1, constructing a semiconductor detector model based on the Monte Carlo method; S2, setting particle sources, which include multiple forms, at least one of which includes two or more types of high-energy particles; S3, performing a real space environment simulation based on the silicon wafer thickness of the semiconductor detector model, calculating the change trend of the primary collision atom energy spectrum caused by irradiation from different forms of particle sources under the same incident structure and the same model. This invention, by using multiple forms of particle sources and comparing the PKA energy spectrum change trends under different particle sources, selects a particle source that better matches the device's mission environment, thus better simulating the influence of comprehensive space radiation environment factors and improving the representativeness of the simulation results for the comprehensive space radiation environment effects.

A monolithic focal plane array (FPA) device and method of fabrication. The method can include forming monolithic photodetectors or FPAs by heteroepitaxial growth of III-V PINs, APDs, or other photodetector devices in etched recesses of a Si-based read-out integrated circuit (ROIC) wafer. In a single-color device example, a wavelength configuring buffer layer and photodetector are grown within the etched recesses using compound semiconductor materials to enable infrared detection at desired wavelength(s). Depending on the application, this growth can be done on a graded compliant buffer layer and / or a selectively transparent buffer layer. And, semiconductor detectors can be incorporated to detect visible and NIR wavelengths in a dual-color device example. Further, the resulting devices can be configured as pixels in a sensor array device coupled to the ROIC device.

An X-ray semiconductor detector (2) comprises a first i-type nitride semiconductor substrate (10), a second i-type nitride semiconductor substrate (15), a p-type semiconductor layer (20), an n-type semiconductor layer (22), a first electrode (25), and a second electrode (26). The first i-type nitride semiconductor substrate (10) includes a first gallium surface (11). The second i-type nitride semiconductor substrate includes a second gallium surface (17). The p-type semiconductor layer (20) is formed on the first gallium surface. The n-type semiconductor layer (22) is formed on the second gallium surface. The first electrode (25) is formed on the p-type semiconductor layer (20). The second electrode (26) is formed on the n-type semiconductor layer (22).

The application provides a semiconductor detector particle pulse waveform data generation and analysis platform based on digital twin technology, comprising: an automatic full-link multi-working-condition semiconductor detector particle pulse waveform simulation system for controlling GEANT4, Weightfield2 and PyLTSPICE software, outputting simulated energy data and differential current data; a double-channel pulse waveform automatic acquisition system for collecting and storing accelerator measured energy data and current data by using physical entities and displaying in multiple channels; and a digital twin and physical twin data comparison and analysis system for analyzing waveform matching degree between accelerator measured waveforms and simulated waveforms under the same working condition and the same circuit parameters. The application has the advantages of efficiently and automatically generating massive pulse waveform data under different working conditions.

The invention relates to the field of neutron dose monitoring, in particular to a wide-energy-region neutron surrounding dose equivalent monitoring method and device. The device comprises an outer-layer moderator, a thermal neutron absorption layer, a high-energy neutron compensation layer and an inner-layer moderator, wherein the high-energy neutron compensation layer is made of a heavy metal material which can generate a remarkable neutron multiplication reaction with ultrahigh-energy neutrons; the thermal neutron detector is a radiation-resistant solid-state semiconductor detector and comprises a silicon carbide semiconductor substrate and a < 6 > Li-enriched lithium fluoride thermal neutron converter tightly attached to the surface of the silicon carbide semiconductor substrate; an initial thermal neutron detector group used for collecting thermal neutron fluence information under different moderation degrees is arranged in the device. And based on the initial thermal neutron detector group, performing position optimization and weight coefficient output, and selecting a plurality of groups of thermal neutron detectors in a first depth order, so that the total dose response is flat in a wide energy region and dose equivalent monitoring is performed.

The portable neutron personal dosimeter disclosed by the embodiment of the invention comprises a silicon semiconductor detector unit used for detecting neutron radiation and generating a corresponding electric signal; the pre-amplification circuit unit is connected with the silicon semiconductor detector unit and is used for processing the detected neutron radiation electric signals and converting the neutron radiation electric signals into pulse signals; the information processing unit is configured to be connected with the pre-amplification circuit unit and is used for processing the pulse signal and outputting neutron dose information; the power supply circuit unit is used for respectively providing proper voltage for the silicon semiconductor detector unit, the pre-amplification circuit unit and the information processing unit; the display screen unit is connected with the information processing unit and is used for displaying the neutron dose information; and the alarm unit is connected with the information processing unit and is used for outputting an alarm signal. The portable neutron personal dosimeter device is simple in structure and light and convenient to use, can accurately detect neutron radiation, can well protect individuals, and has a good application prospect in the field of neutron radiation detection.

An X-ray detector and a method of detecting X-ray radiation are disclosed, relating to the field of X-ray detection technology. The X-ray detector includes a semiconductor detector layer coupled with a light emitting diode (LED) layer on an optical side. The detector is characterized by an X-ray side electrode layer deposited on one side of the semiconductor detector layer and an optical side electrode layer, such as transparent indium tin oxide (ITO), on the opposite side. The semiconductor detector layer includes a high atomic number (Z) material with a high density and resistivity (about 10 6 Ω·cm or greater than 10 6 Ω·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to direct light generated in the LED layer to an optical detector.

A photon counting CT apparatus of an embodiment has a detector module including a semiconductor detector and first processing circuitry configured to process detection data detected by the semiconductor detector. The first processing circuitry is configured to generate heat by performing a pseudo operation during a period in which X-ray exposure is stopped.