377 results about "Semiconductor detector" patented technology

Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

An x-ray and gamma-ray radiant energy imaging device is disclosed having a temperature sensitive semiconductor detector substrate bump-bonded to a semiconductor CMOS readout substrate. The temperature sensitive, semiconductor detector substrate utilizes Tellurium compound materials, such as CdTe and CdZnTe. The bump bonds are formed of a low-temperature, lead-free binary solder alloy having a melting point between about 100° C. and about 180° C. Also described is a process for forming solder bumps utilizing the low-temperature, lead-free binary solder alloy, to prevent damage to temperature sensitive and potentially brittle detector substrate when assembling the imaging device.

A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. The plural pixelated anodes are disposed on a surface of the detector. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to a charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to a charge collected by an adjacent anode to the pixelated anode. The at least one processor is configured to determine a collected value for the collected charge signal in the pixelated anode; determine a non-collected value for the non-collected charge signal in the pixelated anode corresponding to the charge collected by the adjacent anode; use the non-collected value for the non-collected charge signal to determine a sub-pixel location for the adjacent anode; and use the collected value to count a single event in the pixelated anode.

A radiation detector system is provided including a semiconductor detector, plural pixelated anodes, and at least one processor. At least one of the pixelated anodes is configured to generate a collected charge signal corresponding to charge collected by the pixelated anode and to generate a non-collected charge signal corresponding to charge collected by an adjacent anode. The at least one processor includes a tangible and non-transitory memory having stored thereon instructions configured to direct the at least one processor to determine a collected value for the collected charge signal, to determine a non-collected value for the non-collected charge signal, determine a calibrated value for the non-collected charge signal, determine a total charge produced by a charge sharing event using the collected value and the calibrated value, and count the charge sharing event as a single event if the total charge exceeds a predetermined value.

A ganged-detector pixel cell is used in a device having an array of such pixel cells to construct an x-ray and gamma-ray radiation energy imaging device. The ganged-detector pixel cell comprises a detector pixel array of two or more detectors pixels disposed on a semiconductor detector substrate. The detector pixels of the pixel array are in electrical communication with a single pixel signal counting circuit disposed on an adjacent ASIC readout substrate. The ganged-detector pixel cell has a Ratio of Correspondence (RC) between of the number of pixel detectors to the single pixel signal counting circuits in the cell of RC≧1. In practice, the Ratio of Correspondence between of the number of pixel detectors to the single pixel signal counting circuits in a pixel cell is RC≧2.

The invention relates to a multidirectional high energy particle detector. The detector includes a direction sensor which includes semiconductor detectors, the semiconductor detectors are staggeredly arranged in four rows on a side cylinder of a cylindrical pedestal which has a semi-circular cross section, and the semiconductor detectors are positioned with an interval angle of 11.25 degrees; a high energy electron spectrum sensor which includes three different conductor detectors; a high energy particle spectrum sensor which includes three different semiconductor detectors; main amplifiers; peak value retainers; ADC collection circuits; an FPGA processing chip; wherein the output terminals of preposing amplifiers are connected with the corresponding output terminals of the main amplifiers respectively via forming circuits, the output terminals of main discharge circuits are connected with the corresponding output terminals of the peak value retainers respectively, the output terminals of the peak value retainers are connected with the corresponding output terminals of the ADC collection circuits respectively, and the output terminals of the ADC collection circuits are connected with the output terminal of the FPGA processing chip after the analog-digital conversion. The detector detects the flux of the high energy particle along a 180 degrees sector direction, and also detects the power spectrum of the high energy particle along a vertical sector direction.

An x-ray and gamma-ray radiation energy imaging device has its semiconductor detector substrate and semiconductor readout/processing substrate both mounted on opposite sides of, and electrically communicating through, an intermediate substrate. The substrates are all substantially planar with the top plan perimeter of the semiconductor readout/processing substrate falling within the top plan shadow perimeter of the corresponding semiconductor detector substrate with which it electrically communicates. Additionally, all of the readout/processing circuitry contacts of the semiconductor readout/processing substrate are disposed on the surface of the semiconductor readout/processing substrate that electrically communicates with the intermediate substrate. Substantially all electrical communication to and from the semiconductor readout/processing substrate is routed through the intermediate substrate. The intermediate substrate is a printed circuit board or similar construct. The electrical contacts between the semiconductor substrates and the intermediate substrate are accomplished using bump-bonds, conductive adhesive bonds, conductive adhesive films or a combination thereof. One or two dimensional planar arrays of semiconductor readout/processing substrates and corresponding semiconductor detector substrates can be mounted on a single intermediate substrate using “tiling” techniques known in the art to form a mosaic radiation imaging device of increased active imaging area and reduced/minimized imaging dead area.

Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

The invention relates to a conductor crossover for a semiconductor detector, particularly for a drift detector for conducting X-ray spectroscopy. The conductor crossover comprises at least two doped semiconductor electrodes (2), which are placed inside a semiconductor substrate (1), at least one connecting conductor (M), which is guided over the semiconductor electrodes (2), and a first insulating layer (Ox). An intermediate electrode (L) is situated between the connecting conductor (M) and the first insulation layer (Ox). Said intermediate electrode overlaps the area of the semiconductor substrate (1) between the semiconductor electrodes (2) and is electrically insulated from the connecting conductor (M) by at least one additional insulation layer (I). The invention also relates to a drift detector equipped with a conductor crossover of this type and to a detector arrangement for conducting X-ray spectroscopy.

This invention relates to the field of radiation imaging. In particular, the invention relates to an apparatus and a method for imaging tissue or an inanimate object using a novel probe that has an integrated solid-state semiconductor detector and complete readout electronics circuitry.

A microdosimeter, comprising an array of three-dimensional p-n junction semiconductor detectors, each providing a sensitive volume-target and a tissue equivalent medium for generating secondary charged particles. The array is manufactured from a semiconductor on insulator wafer and the detectors are located to detect secondary charged particles generated in the tissue equivalent medium.

An X-ray detector using a semiconductor detector, most preferably a Silicon Drift Detector, utilizes a field effect transistor or other voltage-controlled resistance to generate an output voltage proportional to its input charge (which is generated by the X-ray photons incident on the semiconductor detector). To keep the charge (and thus the output voltage) to an acceptable range—one wherein the relationship between output voltage and input charge is substantially proportional—a feedback circuit is provided between the output and input terminals, wherein the charge on the input terminal is depleted when the output voltage begins leaving the desired range. Preferably, this is done by a comparator which monitors the output voltage, and provides a reset signal to the input terminal when it begins moving out of range. Alternatively or additionally, the reset signal may be a pulse supplied to the input terminal from a pulse generator activated by the comparator.

A semiconductor detector has a tunable spectral response. These detectors may be used with processing techniques that permit the creation of “synthetic” sensors that have spectral responses that are beyond the spectral responses attainable by the underlying detectors. For example, the processing techniques may permit continuous and independent tuning of both the center wavelength and the spectral resolution of the synthesized spectral response. Other processing techniques can also generate responses that are matched to specific target signatures.

The invention discloses a ferroelectric local field enhanced two-dimensional semiconductor photoelectric detector and a preparation method. The detector is characterized in that: the structure of the detector from top to bottom comprises a substrate, a two-dimensional semiconductor, a metal source and drain electrodes, a ferroelectric functional layer and a semi-transparent metal upper electrode in sequence. The preparation method of the detector comprises the steps: a transition-metal chalcogenide two-dimensional semiconductor is prepared on the substrate, an UV lithography or an electron-beam lithography is adopted and combines stripping technology to prepare a metal electrode serving as a source electrode and a drain electrode of a semiconductor channel, a ferroelectric thin film is prepared on the structure, a semi-transparent or transparent electrode is prepared on the ferroelectric thin film, so that a two-dimensional semiconductor detector structure is formed. The detector can make the two-dimensional semiconductor channel background carriers to be completely exhausted through using polarized ferroelectric materials, tiny voltage is applied between the source electrode and the drain electrode, and photoelectric detection is realized through detecting the current signal change under light. The detector has advantages of high sensitivity, fast response, good stability, low power consumption, wide spectrum detection and the like.

There is a need for high-precision detection timing in a radiological imaging apparatus using a semiconductor detector so as to decrease time variations against a noise and easily correct process variations. A radiation detection circuit includes: a semiconductor detector; charge accumulation means connected to the semiconductor detector; a circuit to discriminate timing of a signal generated from the charge accumulation means based on a specified threshold value; a shaper 1 to limit a band from the charge accumulation means using a first time constant; a shaper 2 to limit a band from the charge accumulation means using a second time constant; a circuit 1 to hold an analog peak value 1 for the shaper 1; and a circuit 2 to hold an analog peak value 2 for the shaper 2. The radiation detection circuit performs a signal process to generate timing correction data based on the analog peak values 1 and 2 and correct timing data from the timing discriminator circuit.

The invention discloses a semiconductor detector for measuring radiation and an imaging device, wherein the semiconductor detector comprises a semiconductor medium capable of absorbing radiation to be measured of at least one energy section, an anode electrode arranged on one surface of the semiconductor medium, a cathode electrode arranged on another surface of the semiconductor medium opposite to the first surface, and a signal processing circuit which is connected with the anode electrode and the cathode electrode and processes a detected signal as a numerical value representing energy deposition rate of the radiation, wherein the semiconductor medium receives the incident radiation along the direction parallel with the electrode surfaces, and the anode electrode and the cathode electrode are divided into a plurality of sub-electrode couples at intervals along the incident direction of the radiation for detecting the energy deposition rate of the radiation of corresponding energy sections respectively.

The invention relates to a method for detecting x-rays (R) using an x-ray detector (100) which has a direct-conversion semiconductor detector element (150a, 150b). Additional radiation (K) is supplied to the semiconductor detector element (150a, 150b) using a radiation source (210a, 210b), and the supply of the additional radiation (K) is controlled and/or regulated on the basis of a specified target value (Ta, Tb, Tc). In particular, the target value can be specified in a variable manner over time as a sequence of target values. The invention further relates to an x-ray detector system (200) with which the method can be carried out.

The radiation detector/imaging substrate arrays in an x-ray and gamma-ray radiation energy imaging device are described which use an electrically conductive adhesive to provide electron charge signaling continuity between the detector and read-out substrates of the device. The present device utilizes a plurality of electrically conductive bonds each discretely connecting a pixel contact in the pixel pattern to a signal contact in the signal contact pattern, the bonds being an electrically conductive adhesive. This bonding technique is especially useful in detection/imaging arrays having detector substrates comprising Cadmium and Tellurium compositions. The present invention is practicable with semiconductor detector and read-out substrates with or without “bumped” electrical contacts. The electrically conductive bonds utilize either isotropically or anisotropically conductive adhesives.

The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighbouring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.