40 results about "Semiconductor detector" patented technology

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The invention provides a while-drilling radioactive logging system, a logging method and a drilling tool assembly, and belongs to the technical field of oil-gas exploration, and the system comprises at least one perovskite semiconductor detector which is used for directly absorbing gamma rays from a stratum and generating corresponding electric pulse signals; the electronics module is electrically connected with the perovskite semiconductor detector and used for processing the electric pulse signal to obtain while-drilling radioactive logging data, and the while-drilling radioactive logging data comprises at least one of natural gamma counting data, natural gamma energy spectrum data and gamma-gamma density data; the protection packaging body comprises a metal shock-resistant and high-pressure-resistant shell, a heat insulation and heat preservation layer and a heat channel which are arranged in the metal shock-resistant and high-pressure-resistant shell, and a high shock-resistant and impact-resistant connecting piece for fixing internal devices, and the protection packaging body is used for accommodating the perovskite semiconductor detector and the electronics module; and the safety and the accuracy of radioactive logging while drilling are improved.

An X-ray detector comprising a semiconductor detector layer coupled with a light-emitting diode (LED) layer on the optical side. The detector features an X-ray-side electrode layer deposited on one side of the semiconductor detector layer and an optical-side electrode layer, such as transparent Indium Tin Oxide (ITO), on the opposite side. The semiconductor detector layer is composed of a high atomic number (Z) material with high density and electrical resistivity (around or larger than 106Q·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to guide the light generated in the LED layer to an optical detector.

The application discloses a capacitor measurement circuit and a capacitor measurement method, and belongs to the field of semiconductors. The capacitor measurement circuit can accurately measure the junction capacitance of a semiconductor detector (a device to be measured) in real time and on line while applying thousands of volts of direct-current working voltage to the semiconductor detector by coupling an alternating-current test signal in a high-voltage bias loop and directly responding to charge changes by using a detection module, so that the measurement result truly reflects the capacitance characteristics of the device under the actual high-voltage working state. The entire circuit adopts a topology combining alternating-current injection and charge detection, effectively isolates the influence of high-voltage direct current on the precision detection circuit, guarantees high measurement precision and a signal-to-noise ratio, has good electrical safety, and is also compatible with the capacitor measurement demand under conventional low-voltage or zero-bias conditions, thereby improving the universality and application flexibility of the circuit.

The invention discloses a hybrid photomultiplier coaxial output structure based on a microstrip line. The hybrid photomultiplier coaxial output structure comprises a semiconductor detector, a bonding wire, the microstrip line, a ground electrode, a lead pin, a medium, an outer conductor base and a detector lead pin. The semiconductor detector is used for receiving the photoelectrons converted by the photoelectric cathode and generating a current signal; the bonding wire is used for electrically connecting the semiconductor detector and the microstrip structure; the microstrip line and the ground electrode adopt gold-plated kovar alloy parts to form an in-tube microstrip structure; the guide pin and the detector guide pin are kovar alloy guide pins and form an inner conductor with a coaxial structure; the outer conductor base is a kovar alloy disc and forms an outer conductor with a coaxial structure; the medium is glass or ceramic. According to the coaxial output structure, a vacuum tube is of a 50-ohm microstrip structure, the exterior of the vacuum tube is of a 50-ohm SMA coaxial structure, and a complete 50-ohm coaxial line is formed by connecting a microstrip line and a guide pin together. The structure provided by the invention has the advantages of high transmission speed, small signal reflection and oscillation and the like, and is more beneficial to detection of ultrafast optical pulse signals.

The utility model relates to an objective table for a semiconductor detector, and relates to the technical field of detection object carrying, the objective table comprises a table body and a first moving frame, the table body is slidably arranged on the first moving frame, the first moving frame is provided with a first moving motor, the first moving frame is rotatably provided with a first moving screw rod, and the first moving screw rod is provided with a second moving motor. The first moving frame is slidably provided with a first moving block, the first moving block is connected with the table body, the first moving lead screw penetrates through the first moving block and is in threaded connection with the first moving block, and a rotating shaft of the first moving motor is connected with the first moving lead screw. The application has the effect of improving the use convenience.

The invention provides a vacuum type large-panel semiconductor detector, and relates to the field of semiconductor detectors. The detector comprises a detector cavity, a front end plate and a rear end plate which are detachably connected with the detector cavity are arranged at the two ends of the detector cavity respectively, a vacuum adapter plate is arranged on the end face, facing the exterior of the detector cavity, of the front end plate, and the vacuum adapter plate is used for being connected with an external sample cavity body; the vacuum adapter plate is provided with a front panel, the front panel is provided with a beam through hole and a plurality of front-end modules, and the beam through hole is located between two adjacent front-end modules; the vacuum type large-panel semiconductor detector further comprises a beam tube, one end of the beam tube is arranged in the vacuum adapter plate and communicated with the beam through hole, and the other end of the beam tube penetrates out of the rear end plate. And a rear-end electronic component is also arranged in the inner cavity of the detector cavity. According to the invention, a signal with a higher scattering angle can be collected, so that the ultimate resolution of structural analysis of a coherent diffraction experiment is improved.

A detector system for molecular imaging of a radionuclide comprises a 3D semiconductor detector comprising a plurality of sensor stacks of sensors made of a semiconductor material having an average atomic number Z below 40. A read-out circuitry connected to the pixels is configured to output, for each interaction induced by an incident gamma ray in the detector, a signal representative of a time, a position and an energy of the interaction in the detector. The interactions in the detector belonging to a same event induced by the incident gamma ray are predicted based on the output signals and used to estimate a direction of the incident gamma ray and reconstruct an image based on the estimated directions of incident gamma rays.

The application provides an electronic detector and an electronic detection system. The electronic detector comprises: a Faraday cage for collecting secondary electrons; an electron multiplier fixed to a shielding outer cylinder, for performing primary amplification of the secondary electrons based on a first voltage at an input end of the electron multiplier and a second voltage at an output end of the electron multiplier; a power supply ring connected to the input end of the electron multiplier and the output end of the electron multiplier respectively, for providing the first voltage to the input end of the electron multiplier and the second voltage to the output end of the electron multiplier; a semiconductor detector fixed to the shielding outer cylinder, for applying a third voltage and a bias voltage to the secondary electrons to convert the secondary electrons into a current signal after performing secondary amplification; an amplifier circuit connected to the semiconductor detector, for converting the current signal into a voltage signal; and a signal amplification processing circuit, for converting an image signal from the voltage signal after amplification, so that the electronic detection efficiency can be improved and the image signal-to-noise ratio can be enhanced.

In an embodiment a semiconductor detector includes a radiation entry side, a semiconductor body having an implantation region at a main surface facing the radiation entry side, the implantation region being configured to be contacted by a first electrical potential, and an insulator arranged between the radiation entry side and the semiconductor body, the insulator being configured to be contacted by a second electrical potential such that an inversion region is formed in the semiconductor body, wherein the inversion region is arranged in a recess formed in the implantation region and confined by the implantation region, and wherein an area fraction of the recess on a total area of the implantation region is between 0.01% and 4%, inclusive.

The invention provides an atmospheric large-panel semiconductor detector, and relates to the field of semiconductor detectors. The device comprises a bottom plate, a shielding box, a front panel and a back plate are arranged on the bottom plate, and the front panel and the back plate are detachably connected with the two ends of the shielding box respectively; the front panel is also provided with a plurality of front-end modules. The shielding box is internally provided with a rear-end electronic assembly. The front-end module penetrates through the front panel through a cable to be connected with the rear-end electronic assembly, and the rear-end electronic assembly penetrates through the backboard through a cable to be connected with an external data acquisition system. The atmospheric large-panel semiconductor detector provided by the invention can collect signals with a higher scattering angle, thereby improving the ultimate resolution of structural analysis of a coherent diffraction experiment.

The invention belongs to the technical field of semiconductor detectors, and particularly relates to a detector and a preparation method thereof. The problems that an existing detector integrated structure is low in wafer area utilization rate, crosstalk noise between a circuit and a detector is high, thermal resistance is high, and a heterogeneous integration process of a sensor and a reading circuit needs to be developed are solved. A detector includes: a substrate; the readout circuit layer is arranged on the front surface of the substrate; the detector array layer is arranged on the back surface of the substrate; and the interconnection structure is positioned in the substrate and is electrically connected with the detector array layer and the readout circuit layer. The detector realizes high-performance detection, high-efficiency heat dissipation and compatibility with a standard process at the same time under the condition of high integration level.

To provide a semiconductor detector capable of controlling a gain independently of a response speed.SOLUTION: The semiconductor detector 1 includes a first semiconductor region 11, a plurality of second semiconductor regions 14, an electrode 21, a plurality of electrodes 15, an electrode 13, and a circuit 30. The plurality of second regions 14 are formed on a first direction side D1 of the first region 11, and are provided side by side on a second direction side D1 intersecting the first direction side D2. The electrode 21 is connected to the first semiconductor region 11. The multiple electrodes 15 are connected respectively to the multiple second semiconductor regions 14. The circuit 30 applies a voltage to each of the electrode 21, the electrode 15, and the electrode 13. The first region 11 has a groove 112 located between the plurality of second regions 14 when viewed from the D1 in the first direction. The electrode 13 is disposed in the groove 112 and faces the first semiconductor region 11. The circuit 30 sets the potential of the electrode 13 to a magnitude between the potential of the electrode 21 and the potentials of the multiple electrodes 15.SELECTED DRAWING: Figure 1

The present application relates to a kind of space particle detector based on silicon detector module and its detection method, comprising: silicon detector module, main amplifier, ADC collector and FPGA processor;Wherein, the silicon detector module includes: a piece of silicon semiconductor detector and ASIC device mounted on the same printed board;The ASIC device includes: charge preamplification module, fast shaping circuit and slow shaping circuit.The detection device of the present application adopts silicon detector module, and integrates silicon semiconductor detector and ASIC device, with charge signal amplification, fast / slow voltage pulse signal shaping function;It can also measure the energy spectrum and flux of charged particles;And, through ASIC module and differential amplifier circuit, the consistency of voltage signal input / output linearity is improved;When used for space charged particle measurement, through the high integration and shielding structure design of silicon detector module, the low noise, high integration requirement of space particle detector is reached, and the signal-to-noise ratio is improved.

This invention provides a method for calculating the PKA energy spectrum based on multi-particle source simulation, belonging to the field of satellite space environment analysis technology. The method includes: S1, constructing a semiconductor detector model based on the Monte Carlo method; S2, setting particle sources, which include multiple forms, at least one of which includes two or more types of high-energy particles; S3, performing a real space environment simulation based on the silicon wafer thickness of the semiconductor detector model, calculating the change trend of the primary collision atom energy spectrum caused by irradiation from different forms of particle sources under the same incident structure and the same model. This invention, by using multiple forms of particle sources and comparing the PKA energy spectrum change trends under different particle sources, selects a particle source that better matches the device's mission environment, thus better simulating the influence of comprehensive space radiation environment factors and improving the representativeness of the simulation results for the comprehensive space radiation environment effects.

A monolithic focal plane array (FPA) device and method of fabrication. The method can include forming monolithic photodetectors or FPAs by heteroepitaxial growth of III-V PINs, APDs, or other photodetector devices in etched recesses of a Si-based read-out integrated circuit (ROIC) wafer. In a single-color device example, a wavelength configuring buffer layer and photodetector are grown within the etched recesses using compound semiconductor materials to enable infrared detection at desired wavelength(s). Depending on the application, this growth can be done on a graded compliant buffer layer and / or a selectively transparent buffer layer. And, semiconductor detectors can be incorporated to detect visible and NIR wavelengths in a dual-color device example. Further, the resulting devices can be configured as pixels in a sensor array device coupled to the ROIC device.

An X-ray semiconductor detector (2) comprises a first i-type nitride semiconductor substrate (10), a second i-type nitride semiconductor substrate (15), a p-type semiconductor layer (20), an n-type semiconductor layer (22), a first electrode (25), and a second electrode (26). The first i-type nitride semiconductor substrate (10) includes a first gallium surface (11). The second i-type nitride semiconductor substrate includes a second gallium surface (17). The p-type semiconductor layer (20) is formed on the first gallium surface. The n-type semiconductor layer (22) is formed on the second gallium surface. The first electrode (25) is formed on the p-type semiconductor layer (20). The second electrode (26) is formed on the n-type semiconductor layer (22).

The invention relates to the field of neutron dose monitoring, in particular to a wide-energy-region neutron surrounding dose equivalent monitoring method and device. The device comprises an outer-layer moderator, a thermal neutron absorption layer, a high-energy neutron compensation layer and an inner-layer moderator, wherein the high-energy neutron compensation layer is made of a heavy metal material which can generate a remarkable neutron multiplication reaction with ultrahigh-energy neutrons; the thermal neutron detector is a radiation-resistant solid-state semiconductor detector and comprises a silicon carbide semiconductor substrate and a < 6 > Li-enriched lithium fluoride thermal neutron converter tightly attached to the surface of the silicon carbide semiconductor substrate; an initial thermal neutron detector group used for collecting thermal neutron fluence information under different moderation degrees is arranged in the device. And based on the initial thermal neutron detector group, performing position optimization and weight coefficient output, and selecting a plurality of groups of thermal neutron detectors in a first depth order, so that the total dose response is flat in a wide energy region and dose equivalent monitoring is performed.

An X-ray detector and a method of detecting X-ray radiation are disclosed, relating to the field of X-ray detection technology. The X-ray detector includes a semiconductor detector layer coupled with a light emitting diode (LED) layer on an optical side. The detector is characterized by an X-ray side electrode layer deposited on one side of the semiconductor detector layer and an optical side electrode layer, such as transparent indium tin oxide (ITO), on the opposite side. The semiconductor detector layer includes a high atomic number (Z) material with a high density and resistivity (about 10 6 Ω·cm or greater than 10 6 Ω·cm) to effectively absorb X-ray radiation while minimizing dark current. A fiber optic plate is used to direct light generated in the LED layer to an optical detector.

A photon counting CT apparatus of an embodiment has a detector module including a semiconductor detector and first processing circuitry configured to process detection data detected by the semiconductor detector. The first processing circuitry is configured to generate heat by performing a pseudo operation during a period in which X-ray exposure is stopped.

For single photon emission computed tomography (SPECT) detectors, embedded capacitive material (ECM) is used in printed circuit boards (PCB) with semiconductor detectors. High voltage (HV) filtering and / or blocking capacitors are formed from ECM. ECM is less disruptive to radiation or emissions to be detected by the semiconductor detectors compared to surface mounted capacitors.

This utility model relates to the field of molybdenum ore sample detection technology, and discloses a molybdenum ore sample detection device based on the FP-XRF method. This utility model solves the problems of inaccurate excitation of samples of different shapes and sizes, unstable clamping of irregular samples, poor continuity of the detection process, and low efficiency in existing molybdenum ore detection technologies. The device uses a housing as its core support, with top components for easy operation and monitoring, side heat dissipation grilles to ensure a safe operating environment, and a front door for convenient operation. The internal six-degree-of-freedom translation stage flexibly adjusts the X-ray excitation source to adapt to various samples; the adaptive clamp precisely fixes irregular samples, avoiding displacement deviation; and the trapezoidal stage drive system combined with a position sensor allows for omnidirectional sample inspection. Simultaneously, the optimized semiconductor detector and integrated signal processing unit enhance signal acquisition and processing capabilities.

The application provides a junction barrier wide energy detection range semiconductor electron detector and an imaging method, and belongs to the technical field of semiconductor detectors and electronic imaging. The device is a vertical stacked structure, and sequentially comprises, from bottom to top, a first electrode, a semiconductor substrate layer, a semiconductor epitaxial layer and a second electrode. The first electrode is used for forming electrical interconnection with an external circuit. The semiconductor substrate layer is arranged on the first electrode and is used as a support layer and a back contact layer of the device. The semiconductor epitaxial layer is grown on the semiconductor substrate layer, and the semiconductor epitaxial layer is composed of at least one layer of non-intentionally doped high-purity epitaxial layer. The second electrode is deposited on the surface of the semiconductor epitaxial layer and forms a Schottky contact. The semiconductor electron detector can realize ultra-low dark current at an extremely low working bias, nanosecond-level fast response, and can realize the separation imaging of SE and BSE signals flexibly by adjusting the bias.

The utility model discloses a device for automatically replacing radon daughter measurement filter paper. The device comprises a paper feeding mechanism which is fixedly arranged on the inner side of a cabin body and is used for conveniently replacing radon monitoring test paper. When radon monitoring is carried out, the paper feeding motor drives the driving rotating shaft to rotate through the transmission structure, test paper is pulled from the surface of the driven rotating shaft to the surface of the driving rotating shaft, and the test paper passes through the telescopic end of the lifting motor under the guiding action of the guiding rotating shaft and the guiding block; test paper is extruded towards the outer side and makes contact with the surface of a semiconductor detector of the radon daughter measuring module, radon is monitored, counting is conducted through a counting bearing in the using process, the using number of the test paper is monitored, after it is monitored that the test paper is used up, displaying is conducted through a display control module, the radon monitoring efficiency and accuracy are improved, and the radon daughter measuring device is suitable for popularization and application. Meanwhile, the test paper replacement process is simplified, and the operation complexity is reduced.

This invention belongs to the field of semiconductor detector technology, and provides a flexible low-gain SiC particle detector and its fabrication method. The SiC particle detector includes: an N-type doped SiC layer as an N+ gain layer between an N-type active region and a P-type SiC ohmic contact layer; controlling the doping concentration and thickness of the N+ gain layer to achieve a gain of 14-18 times for the SiC particle detector. The fabrication method includes: epitaxially growing an N+ gain layer composed of N-type doped SiC between the N-type active region and the P-type SiC ohmic contact layer; and controlling the doping concentration and thickness of the N+ gain layer to obtain a flexible low-gain SiC particle detector with increased charge collection efficiency and significantly improved signal-to-noise ratio. Furthermore, the use of a mica substrate gives the SiC particle detector excellent bending performance, making it suitable for large-scale curved low-gain SiC particle detectors.

This X-ray semiconductor detector (2) comprises an i-type nitride semiconductor substrate (10), a p-type semiconductor layer (16), a n-type semiconductor layer (17), a first electrode (21), and a second electrode (22). An i-type nitride semiconductor substrate (10) has a first main surface (11) and a second main surface (12). The p-type semiconductor layer (16) is formed on the first main surface (11). The n-type semiconductor layer (17) is formed on the second main surface (12). The first electrode (21) is formed on the p-type semiconductor layer (16). The second electrode (22) is formed on the n-type semiconductor layer (17). The first main surface (11) and the second main surface (12) are non-polar surfaces of nitride semiconductor crystals constituting the i-type nitride semiconductor substrate (10) or surfaces inclined by an off-angle within 5° from the non-polar surfaces.

The utility model relates to a kind of detector device, including base, telescopic mechanism and semiconductor detector, telescopic mechanism includes telescopic column, telescopic column is set on base and protrudes base upper surface, semiconductor detector includes detector shell, hinging is carried out between the telescopic end of telescopic column and the lower surface of detector shell, the upper surface of detector shell has irradiation window, the detector shell of semiconductor detector is connected with base by telescopic column, telescopic end and the detector shell between telescopic column are connected using the way of hinging, so that detector shell can be adjusted horizontally angle, by telescoping of telescopic column, to drive semiconductor detector to move up and down, it is convenient to adjust the distance between irradiation window and irradiation lamp, it is easy to operate, and adjustment efficiency is high, improve work efficiency.

The invention discloses an indoor wireless positioning electronic personal dosimeter and a radiation dose monitoring system.The dosimeter comprises a radiation detection module and a wireless positioning and communication module, the radiation detection module comprises a first single-chip microcomputer, a semiconductor detector and a display screen, and the semiconductor detector and the display screen are both connected with the first single-chip microcomputer; the wireless positioning and communication module comprises a second single-chip microcomputer, a wireless positioning module and a wireless communication module, the wireless positioning module and the wireless communication module are both connected with the second single-chip microcomputer, and the first single-chip microcomputer and the second single-chip microcomputer are connected through a UART interface. Compared with a traditional electronic personal dosimeter, the indoor wireless positioning electronic personal dosimeter supporting 5G communication not only can monitor the irradiation radiation dose of an operator, but also can monitor the position of the operator, can reach the sub-meter-level positioning precision, and can improve the existing personal dose monitoring mode.

The invention provides a semiconductor inspection system having anisotropy and durability, a socket for semiconductor inspection, and a semiconductor detector. The semiconductor inspection system is provided with: a non-conductive resin body (10) having a plurality of contacts (20) of a conductive filler (30); a network body (40, 60) in which a plurality of intersection points (50, 70) are electrically conductive; the semiconductor inspection system is manufactured by clinging the resin body 10 to the mesh bodies 40, 60 in a state in which the intersection points 50, 70 are aligned with the positions of the contacts 20.