The invention discloses a method for preparing a CZT high-energy-resolution
radiation chip, and belongs to the technical field of electrical component production, and the method comprises the following steps: S1, growing a CZT
crystal; s2, preparing a required CZT sheet by adopting the CZT
crystal; s3, injecting a certain
dose of
fluorine ions into the CZT sheet; s4, performing an annealing process on the CZT sheet after the
fluorine ions are injected, so that the
fluorine ions are uniformly diffused in the CZT sheet to improve
lattice defects during growth of the CZT
crystal; s5,
indium ions are injected into the
surface layer of the
cathode of the CZT sheet, so that the resistivity of the CZT sheet is improved, the energy band structure of the CZT sheet is changed, and a stronger
radiation signal is generated; s6, the annealing process is carried out again, so that
indium ions are more uniformly distributed on the
surface layer of the CZT sheet; s7, plating
platinum on the
cathode surface of the CZT sheet, and plating
indium on the
anode surface of the CZT sheet; and S8, respectively connecting the CZT sheet with the
cathode and the
anode of the
detector, and then packaging the CZT sheet with a shell. The method has the advantages that
lattice defects are improved, and the carrier migration life product is improved.