An integrated
photodetection semiconductor optoelectronic component (300) for measuring the intensity (I1, I2) of each of two color components (C1, C2) of dichroic light (DL) irradiating the optoelectronic component, comprising: a first SPAD (306) adapted to detect photons within a wide
wavelength range, the first SPAD comprising an
effective surface area (340) allowing photons to be detected to enter the first SPAD; a second SPAD (308) adapted to detect photons within a wide
wavelength range, the second SPAD being arranged adjacent to the first SPAD (306); and a
semiconductor optical long-pass filter (310) at least partially covering the
effective surface area (340) of the first SPAD. 310) allows the first color component (C1) of the two color components of the dichroic light (DL) to pass through, and blocks the second color component (C2) of the two color components of the dichroic light (DL); an
electronic circuit (304) for reading and
processing the detection signals (S1, S2) transmitted by the first and second SPADs, the
electronic circuit being suitable for: i) providing a first intensity output
signal I1 indicating the intensity of the first color component (C1) based on the detection
signal (S1) transmitted by the first SPAD; and ii) providing a second intensity output
signal I2 indicating the intensity of the second color component (C2) through
difference analysis based on the detection signals (S1, S2) transmitted by the first and second SPADs.