241 results about "Vacuum ultraviolet" patented technology

Embodiments of the present invention relate to a technology for easily adjusting a level of static electricity required for a substrate according to a semiconductor process by injecting static electricity into the substrate or removing static electricity already formed on the substrate. A static electricity control device for injecting static electricity into a substrate disposed in a vacuum chamber or removing static electricity formed on the substrate in a semiconductor processing system, according to an embodiment, comprises: a charged particle generation unit, disposed on an upper side inside the vacuum chamber, that generates charged particles including positive ions and electrons by generating a vacuum ultraviolet ray (VUV) and reacting the VUV with a process gas inside the vacuum chamber; a grid provided with a plurality of holes, disposed on a lower side of the charged particle generation unit, that selectively pass the type of charged particles downward according to an input voltage; a substrate support, disposed below the grid and having the substrate positioned thereon, that is made of a conductive material and guides the charged particles passing through the grid toward the substrate at a predetermined density according to an input bias voltage; and a static electricity control unit that controls the static electricity of the substrate by supplying a pulsed voltage to at least one of the grid and the substrate support, wherein the grid and the substrate support are arranged so as to have a separation distance that is within four times the mean free path of the process gas according to environmental conditions of the vacuum chamber.

The invention provides a vacuum ultraviolet deuterium lamp spectral radiance traceability method, device and equipment, and relates to the technical field of optical metrology. The method comprises the following steps: determining relative spectral distribution of a deuterium lamp in a vacuum ultraviolet band; acquiring the spectral radiation brightness of the deuterium lamp at 200nm under the condition that the black body is used as a standard radiation source; and determining the spectral radiation brightness of the deuterium lamp in the vacuum ultraviolet band according to the relative spectral distribution of the deuterium lamp in the vacuum ultraviolet band and the spectral radiation brightness of the deuterium lamp at 200nm. The method provided by the embodiment of the invention efficiently and accurately realizes the spectral radiance traceability of the vacuum ultraviolet deuterium lamp.

The invention relates to the technical field of metal wire processing, and discloses a high-performance metal wire plastic coating process for aerospace engineering, which comprises the following steps: carrying out base material type selection on a metal wire, and carrying out surface treatment of precise cleaning, etching and depth gradient activation; a Ti-Cr alloy and graphene-copper composite transition layer is deposited through a magnetron sputtering technology, and a multi-layer coating structure is formed through electrostatic spraying of a base coating, a fluidized bed dipping function layer and high velocity oxy-fuel spraying of a nano composite coating in sequence; the molybdenum-gold composite sealing layer is prepared by adopting an electric arc spraying technology, and is subjected to vacuum ultraviolet curing enhancement, high-temperature gradient annealing, gradient sintering and vacuum curing treatment; and heat radiation on the surface of the coating is enhanced through laser-induced micro-nano structure regulation and silicon nitride film sputtering. Through collaborative optimization of base material treatment, coating construction, function strengthening and quality control, the interface bonding strength, the comprehensive performance and the environmental adaptability of the spaceflight metal wire coating are remarkably improved, and the service life of the spaceflight metal wire coating is remarkably prolonged.

The invention belongs to the technical field of water treatment, and particularly relates to a method for degrading antibiotics in water based on vacuum ultraviolet rays, which comprises the following steps: adding a sample water body containing antibiotics into a sample container of a photoreaction device, and starting a magnetic stirrer to uniformly mix liquid in the sample container under the action of rapid rotation of a magnetic stirring rotor; adding a Fenton reagent into the sample container to enable the sample water body to reach a preset reaction condition; the peristaltic pump is opened, and the reaction liquid in the sample container is pumped into the annular reaction layer under the action of the peristaltic pump and reacts under the irradiation of the detachable vacuum ultraviolet light source so as to degrade antibiotics in the sample water body.

A method for sterilely connecting a cut end (13) of a silicone tube (1) with a connecting element (2) comprises sterilising the cut end (13) using a ultraviolet-C (UVC) radiation (5), then connecting the cut end (13) with the connecting element (2), thereby providing an adhesiveless connection. A device for performing such method comprises an operation chamber, within which is provided a tube support configured to receive a silicone tube (1), an additional support configured to receive a connecting element (2), a UVC radiation source (5) configured to sterilise the silicone tube (1), and a driver configured to move the supports relative to each other. The UVC radiation (5) may comprise VUV (vacuum ultraviolet) radiation. The UVC radiation also causes surface activation of the silicone tube (1). The connecting element (2) may be a second silicone tube.

The invention belongs to the technical field of online analysis of organic pollutants, and particularly relates to a device and a method for real-time online analysis of non-volatile organic pollutants. The device comprises a sample injection module, a vacuum ultraviolet lamp, an ionization source cavity, a repulsion electrode, an ion funnel, a mass analyzer and a vacuumizing module, the ionization source cavity is provided with a sample injection port, a vacuum extraction port and an ion output port, and the vacuum ultraviolet lamp, the repulsion electrode and the ion funnel are sequentially arranged in the ionization source cavity at intervals in the axis direction of the ion output port; the ion funnel is close to the ion output port; the sample injection module is arranged at the sample injection port; the vacuumizing module is arranged on the vacuum extraction opening; the ion output port is externally connected with a mass analyzer; a direct-current voltage is applied to the repulsion electrode, and a direct-current voltage and a radio-frequency voltage are applied to the ion funnel. According to the invention, the ions with relatively large initial distribution area can be focused, so that the detection sensitivity is further improved, and the detection requirements on trace non-volatile organic pollutants are met.

The invention discloses a composite ion source device for coupling atmospheric pressure interface orbitrap mass spectrometry, which belongs to the field of mass spectrometry detection and comprises a photo ionization / photo-induced association ionization ionization and ion transmission mechanism, a gas sample introduction mechanism, a high-flux radio frequency vacuum ultraviolet light source mechanism and an ion source and mass spectrometry interface mechanism. By adopting the composite ion source device for coupling the atmospheric pressure interface orbitrap mass spectrum, organic components with different polarities, ionization energy and ion affinity in a complex mixture can be efficiently ionized, and through reasonable structural design, the organic components are coupled with the high-resolution orbitrap mass spectrum with the atmospheric pressure interface, so that the high-resolution orbitrap mass spectrum is obtained. The detection range of complex organic components is widened, and the resolution capability and the detection sensitivity of low-abundance or high-molecular-weight organic components are improved.

The invention discloses a method for measuring first electron affinity of a semiconductor film material, which belongs to the field of surface interface analysis and comprises a calibration step, a test step and a calculation step. According to the method, a vacuum ultraviolet light electron energy spectrum system and a reflective electron energy spectrum system are carried in a main ultrahigh vacuum chamber, and an ultraviolet light electron energy spectrum technology and a reflective electron energy spectrum technology are combined, so that a secondary electron cut-off side energy position and a work function relative to a Fermi level can be obtained; in addition, the position of the conduction band bottom or the position of the lowest unoccupied molecular orbital can be obtained, the first electron affinity value of the semiconductor film material can be further obtained through calculation, and the measurement method is convenient, simple in operation process, high in accuracy and high in universality.

Provided is a method of filling a gap with a flowable oxide film. In one embodiment of the disclosure, the method comprises forming a flowable silicon nitride film, followed by converting the silicon nitride film in a silicon oxide film. The silicon nitride film may be formed by supplying an oligomeric silicon source and a nitrogen source activated by a power. The silicon nitride film may be converted into the silicon oxide film by supplying an oxygen source while applying a vacuum UV radiation. The vacuum UV radiation may be applied in a pulsed mode.

A method for manufacturing a reinforced aluminum mirror for vacuum ultraviolet (VUV) optical elements includes a step of depositing a reflective coating made of aluminum metal on at least one surface of a substrate by physical vapor deposition (PVD) to produce a mirror having the substrate and the reflective coating. This method further includes a step of removing aluminum oxide from the outer surface of the reflective coating by performing atomic layer etching (ALE) within an atomic layer deposition (ALD) system to produce an etched surface of the reflective coating, and a step of depositing an ALD protective layer on the etched surface of the reflective coating by performing atomic layer deposition within the ALD system to produce the reinforced aluminum mirror. This reinforced aluminum mirror comprises a substrate, a reflective coating deposited on the substrate, and an ALD protective layer covering the etched surface of the reflective coating.

The invention relates to the technical field of lasers, in particular to an all-solid-state continuous wave vacuum ultraviolet laser adopting double resonant cavities, which is characterized in that a first cavity mirror M1, a first laser crystal C1, a fourth cavity mirror M4, a fifth cavity mirror M5 and a sixth cavity mirror M6 form a first laser resonant cavity; the second cavity mirror M2, the second laser crystal C2, the third cavity mirror M3, the fourth cavity mirror M4, the fifth cavity mirror M5 and the sixth cavity mirror M6 form a second laser resonant cavity; the first nonlinear optical crystal O1 is arranged between the fifth cavity mirror M5 and the sixth cavity mirror M6, and is used for performing frequency doubling on the 526-nm laser generated by the first resonant cavity into 263-nm frequency-doubled laser; the second nonlinear optical crystal O2 is arranged between the fourth cavity mirror M4 and the fifth cavity mirror M5, frequency sum is carried out on 725nm fundamental frequency laser generated by the second resonant cavity and 263nm frequency doubling laser generated by the first nonlinear optical crystal O1, and 193nm vacuum ultraviolet laser is generated and output through the fourth cavity mirror M4. The internal structure is simple, and the frequency conversion frequency is low.

The invention relates to a vacuum ultraviolet detector based on aluminum nitride and a preparation method thereof. The vacuum ultraviolet detector comprises a bottom electrode, a substrate, an aluminum nitride layer, a two-dimensional semiconductor material layer and a top electrode, the bottom electrode is arranged below the substrate, the aluminum nitride layer is arranged above the substrate, the bottom end of the two-dimensional semiconductor material layer is connected with the aluminum nitride layer, and the top end of the two-dimensional semiconductor material layer is connected with the top electrode; the aluminum nitride layer is formed by depositing an amorphous or polycrystalline aluminum nitride film on the upper surface of the substrate through a magnetron sputtering method or depositing a single crystal aluminum nitride film on the upper surface of the substrate through an atomic layer deposition method or a physical vapor transport method. Compared with the prior art, the p-Si / n-AlN / p-2DMs vacuum ultraviolet detector constructed by the invention can be used for detecting laser with wide spectral wavelength and obtaining extremely fast transient response current in a VUV wave band.

The invention relates to the field of electronic detectors, and discloses a reflective ultrafast scintillation vacuum ultraviolet light imaging detection system and a method thereof.The reflective ultrafast scintillation vacuum ultraviolet light imaging detection system comprises a light path system, a detection and recording component and a structure supporting component, and the light path system is in reflective light path configuration and comprises a primary mirror, a secondary mirror, a correction lens, an integrated filter and a vacuum ultraviolet scintillator; and the vacuum ultraviolet scintillator is made of a PEA2PbBr4 crystal or a BA2PbBr4 crystal. According to the invention, by constructing reflective optical path configuration, the capability of the device in vacuum ultraviolet (VUV) scintillation imaging is successfully shown. The invention not only provides a new solution for reducing the influence of the self-absorption effect in the perovskite scintillator, but also establishes a bridge between the perovskite scintillator and the perovskite scintillator actually applied to ultrafast VUV detection, and opens up a new way for the application of the perovskite material in the field of VUV imaging.

This invention relates to the field of industrial wastewater treatment technology, and discloses an electrocatalytic oxidation device and its operating method for treating saline industrial organic wastewater. Wastewater enters the reaction chamber through the bottom inlet, is forced through the anode channels, and undergoes an electrochemical oxidation reaction on the anode surface to convert chloride ions into hypochlorous acid. A vacuum ultraviolet light source performs in-situ photolysis of water molecules and hypochlorous acid, exciting various active species, including strongly reducing hydrated electrons, strongly oxidizing hydroxyl radicals, and chloride radicals. This device, through the construction of a reduction-oxidation system, can efficiently degrade various pollutants with both electron-rich and electron-deficient characteristics. This invention utilizes the synergistic coupling of electrochemical generation and photochemical conversion to convert high-concentration chloride ions into active precursors, effectively overcoming the bottlenecks of low degradation efficiency and poor selectivity in traditional technologies for high-salt and complex water quality, and significantly improving the system's mineralization efficiency and energy utilization rate.

An apparatus for removing static electricity of a semiconductor substrate, which removes static electricity embedded inside a thin film on the semiconductor substrate by emitting vacuum ultraviolet (VUV) light to the semiconductor substrate disposed inside a vacuum chamber. The apparatus includes: a VUV generator disposed at an upper side of the vacuum chamber and provided with a VUV lamp configured to emit small-area VUV light into an inside of the vacuum chamber; and a light diffusion unit disposed below the VUV generator and configured to diffuse incident VUV light into a wide area and output the diffused VUV light to the semiconductor substrate disposed below the light diffusion unit.

The present invention provides a method with which it is possible to effectively perform a desmear treatment.　This desmear treatment method includes: irradiating a substrate that has a hole and a smear in the hole with vacuum ultraviolet light so that the contact angle with water of the substrate is 40-70 degrees; supplying a swelling liquid for swelling the smear to the substrate that has been irradiated with the vacuum ultraviolet light; and supplying a removal liquid for removing the smear from the substrate to the substrate in which the smear has been swollen.

A mirror for reflecting vacuum ultraviolet light is disclosed. The VUV mirror may include a substrate. The VUV mirror may include a reflective layer deposited on the substrate, wherein the reflective layer is reflective of light of a wavelength between 100-200 nm. The VUV mirror may include a layer of noble metal deposited on the reflective layer, wherein the layer of noble metal provides environmental stability to the reflective layer and is transmissive to light of a wavelength between 100-200 nm.

A method of filling a gap or a feature is provided. The method may comprise introducing a substrate provided with a gap of a feature into a process system; executing one or more cycles, a cycle comprising a deposition step and a curing step, the deposition step comprising: providing a 1st precursor and a 2nd precursor, the 1st precursor comprising a Si-containing precursor; providing a process gas, wherein the process gas comprises at least one of Ar, H2, N2, He, O2, NH3, or a combination thereof and; generating a plasma, wherein the plasma causes the precursors and the process gas to react to form a gap filling fluid; the curing step comprising: simultaneously exposing the substrate to a vacuum ultraviolet radiation and to an ambient gas, thereby curing the gap filling fluid and forming a film in the gap or the feature.

The present invention relates to the technical field of lasers, and particularly relates to an all-solid-state continuous-wave vacuum ultraviolet laser using a double resonant cavity. A first cavity mirror M1, a first laser crystal C1, a fourth cavity mirror M4, a fifth cavity mirror M5, and a sixth cavity mirror M6 form a first laser resonant cavity; a second cavity mirror M2, a second laser crystal C2, a third cavity mirror M3, the fourth cavity mirror M4, the fifth cavity mirror M5, and the sixth cavity mirror M6 form a second laser resonant cavity; a first nonlinear optical crystal O1 is disposed between the fifth cavity mirror M5 and the sixth cavity mirror M6 to frequency-double the 526-nm laser generated by the first resonant cavity into a 263-nm frequency-doubled laser; a second nonlinear optical crystal O2 is disposed between the fourth cavity mirror M4 and the fifth cavity mirror M5 to sum-frequency the 725-nm fundamental-frequency laser generated by the second resonant cavity and the 263-nm frequency-doubled laser generated by the first nonlinear optical crystal O1 to generate a 193-nm vacuum ultraviolet laser, which is output through the fourth cavity mirror M4. The present invention has a simple internal structure and requires fewer frequency conversion times.

The application provides a method for measuring material ionization potential based on ultraviolet photoelectron yield spectrum, and relates to the technical field of material analysis, and comprises the following steps: monochromatic light in a vacuum ultraviolet band is divided into a main light path for transmission and a reference light path for reflection at a target wavelength; the number of incident photons of the reference light path at the target wavelength is measured, and the number of incident photons of the main light path at the target wavelength is measured; the light splitting ratio at the target wavelength is calculated according to the number of incident photons of the main light path and the number of incident photons of the reference light path at the target wavelength; the number of photoelectrons excited by the main light path from the surface of a sample to be measured at the target wavelength is measured; the ultraviolet photoelectron yield spectrum of the sample to be measured is determined according to the light splitting ratio, the number of incident photons of the main light path and the number of photoelectrons at multiple wavelengths, and the ionization potential of the sample to be measured is determined based on the ultraviolet photoelectron yield spectrum. The application not only simplifies the measurement process of the ionization potential, but also improves the accuracy and stability of the experiment.

The invention relates to the technical field of semiconductor device photoelectric detection, in particular to a silicon carbide-based ultraviolet position sensitive detector based on a thin Schottky metal material and a preparation method thereof, and the silicon carbide-based ultraviolet position sensitive detector comprises an N-type ohmic contact lower electrode, an N-type silicon carbide substrate and an N-type silicon carbide low-doped epitaxial layer which are sequentially connected from bottom to top; the N-type silicon carbide low-doped epitaxial layer is provided with a Schottky metal film with the thickness lower than 4 nm, and the Schottky metal film is used for forming a photosensitive area. A plurality of metal conductive electrodes are arranged at the edge of the top of the Schottky metal film, are electrically connected with the Schottky metal film and are used for leading out position-related electric signals. The problems that an existing pn junction type position sensitive detector is limited in response speed and insufficient in time resolution are effectively solved, and the detection efficiency and the position resolution capacity of the detector in the vacuum ultraviolet band are effectively improved.

The present application belongs to the technical field of energy dissipation dam, and particularly relates to an energy dissipation dam with pollutant removal capacity and an energy dissipation purification method. The present application comprises a plurality of energy dissipation steps, and a box with an open upper end is arranged on the energy dissipation steps. A filter energy dissipation pool is connected in the box and is inclined towards the upper energy dissipation step. A plurality of filter materials with gradually decreasing particle sizes are sequentially arranged in the filter energy dissipation pool from the upper end to the lower end. An ozone aeration unit is arranged at the lower end of the filter energy dissipation pool. An inclined photocatalysis generating plate and a vacuum ultraviolet LED unit are further arranged in the box. The photocatalysis generating plate is located between the vacuum ultraviolet LED unit and the filter energy dissipation pool. The photocatalysis generating plate is provided with photocatalysis materials on the surface and is embedded with filter materials. An outflow port is arranged on the box. A biological contactor is arranged at the outflow port. An air blowing aeration unit is connected to the biological contactor. The present application provides an energy dissipation dam with pollutant removal capacity and an energy dissipation purification method.

A vacuum ultraviolet collimated parallel light reactor and a water treatment method, the vacuum ultraviolet collimated parallel light reactor comprising: an irradiation cavity, provided with a first chamber, an irradiation window arranged at the bottom of the first chamber, and an air outlet connected to the first chamber; a pillar, supporting the irradiation cavity; a light source, arranged in the first chamber and connected to the irradiation cavity, configured to emit vacuum ultraviolet rays to the irradiation window; and a reaction cavity, connected to the bottom of the irradiation cavity, provided with a second chamber whose top is connected to the irradiation window and an air inlet connected to the second chamber; wherein the air inlet is used to receive anoxic gas so that the anoxic gas fills the first chamber and the second chamber, and the air outlet is used to discharge the gas in the first chamber. The technical problem to be solved by the present application is how to efficiently utilize vacuum ultraviolet rays.

The invention discloses an under-expansion jet vacuum ultraviolet light ionization source which comprises a sample injection pipeline, a coaxial sample injector, a vacuum ultraviolet light source, an under-expansion jet ionizer, an insulating exhaust ring, a focusing differential electrode, an insulating ring, a cavity, a vacuum pump set and the like. Sample gas enters the coaxial sample injector through the sample injection pipeline, is stably and coaxially introduced into the under-expansion jet ionizer, and is ionized into ions by vacuum ultraviolet light in a high-pressure ionization region of the under-expansion jet ionizer, and the ions enter a low-pressure scattering region after passing through the sound velocity flow limiting hole, so that the ions are separated from the under-expansion jet ionizer. Under the action of the under-expansion jet flow in the scattering area and the focusing electric field between the ionizer and the focusing differential electrode, ions are quickly transmitted into the back-stage vacuum in a focusing manner, and redundant gas is pumped out by the vacuum pump set through the insulating exhaust ring. According to the ionization source, the problems of shock wave interference generated by a traditional jet technology, collision induced dissociation generated by a radio frequency transmission technology and the like are solved, and ion transmission under high air pressure is effectively improved.

The invention discloses a frequency-variable light source capable of covering a vacuum ultraviolet band based on a frequency conversion system, and belongs to the technical field of laser optics and nonlinear optics. The device comprises an infrared or visible light wave band laser, an optical frequency conversion device, an amplitude and pulse adjusting device, a frequency selection resonant cavity, a higher harmonic module and a light source output coupling module. A frequency converter and a wavelength selection resonant cavity are added behind a laser source, so that the original single-frequency light is converted into other wavelengths through frequency conversion, then the light is converted into an ultraviolet band through a higher harmonic method, and a light source with any adjustable frequency in a vacuum ultraviolet band range is realized. By means of a method of adopting a nonlinear crystal, an inflatable photonic crystal fiber and a higher harmonic module, broadband spectrum frequency conversion operation is implemented, and a vacuum ultraviolet wave band covered after final frequency conversion reaches the range of 100-300 nm. By adding an amplitude and pulse width adjusting device behind the wavelength selection resonant cavity, the pulse width adjustment of the generated laser can be realized.

To reduce a use amount of inert gas.SOLUTION: An optical processing method irradiates a processing target with vacuum-ultraviolet light, to optically process a surface of the processing target. The vacuum-ultraviolet light emitted from a light source mainly includes air. The vacuum-ultraviolet light is emitted so as to pass through a first medium contacting the light source and a second medium contacting the processing target and not including oxygen gas to reach the processing target. An optical processing system includes: an optical processing unit including a light source configured to emit the vacuum-ultraviolet light, a lamp house surrounding the light source, and an air supply port configured to make a space inside the lamp house to be a space filled with the first medium mainly containing the air, the optical processing unit configured to optically process a surface of the processing target conveyed along a conveyance route; and an isolation part having the second medium not including an oxygen gas so as to cover the surface of the processing target.SELECTED DRAWING: Figure 1

This invention discloses a miniaturized portable mass spectrometer based on a vacuum ultraviolet photoionization source and its analytical method, relating to the field of mass spectrometry analysis technology. The mass spectrometer includes: a sample introduction and pre-screening module, consisting of a sample introduction system and an intelligent sample pre-screening unit. The sample introduction system enables gas-liquid sample switching. The pre-screening unit collects data through physical and chemical characteristic detection subunits, and outputs target compound type and parameter adjustment instructions after processing by a data analysis subunit. This invention, through the intelligent sample pre-screening unit in the sample introduction and pre-screening module, utilizes physical and chemical characteristic detection subunits to quickly acquire physicochemical characteristic data such as the color spectrum, volatile components, and pH value of the sample. The compound type recognition model built into the data analysis subunit can automatically compare with the sample characteristic database, quickly identify the target compound type, and generate ionization source parameter adjustment instructions, greatly simplifying the operation process and reducing detection time.

A method is provided for producing a modified polysilazane-cured coating that densifies a coating made of a polysilazane compound in a short period of time. This method provides a coating having a sufficiently low water vapor transmission rate in a short period of time. Additionally, this method provides a modified polysilazane-cured coating. To cure the coating containing polysilazane, it is irradiated with vacuum ultraviolet (VUV) light at an intensity within a specific range. The method includes a step of applying a base material containing the polysilazane compound represented by formula (1) to form a coating and irradiating the coating with Xe excimer light to modify the polysilazane compound and form a cured coating of the modified polysilazane compound. The illuminance of the Xe excimer light in the curing step is set to a range of 280 to 450 mW / cm2.

The invention discloses a spiral pipeline device of an integrated automobile seat ventilation system, and relates to the technical field of seat ventilation systems, the spiral pipeline device comprises a box body, a spiral air pipe is mounted at the output end of the back surface of the box body, a sealing block is movably mounted on the right side of the box body in a penetrating manner, and an adsorption mechanism is mounted on the left side of the sealing block; the adsorption mechanism comprises a second grid frame and activated carbon particles, the second grid frame is installed on the left side of the sealing block, and the activated carbon particles are installed in the second grid frame; a water accumulation box is installed at the bottom of the box body, a plurality of first air boxes are installed at the bottom of the water accumulation box, and first fans are installed in the first air boxes. According to the vehicle-mounted air purifier, the vacuum ultraviolet lamp generates ultraviolet rays to photodecompose air to generate ozone, the ozone and the ultraviolet rays are combined to decompose organic matters entering the box body to generate water and carbon dioxide, and then the residual organic matters in the air are absorbed by the activated carbon particles, so that air purification is realized, and the air quality in a vehicle is improved.

The present invention discloses a composite ion source device for coupling an atmospheric pressure interface orbital trap mass spectrometer, belonging to the field of mass spectrometry detection, and comprising a photoionization / photoinduced association ionization and ion transmission mechanism, a gas sampling mechanism, a high-throughput radio frequency vacuum ultraviolet light source mechanism, and an ion source and mass spectrometer interface mechanism. The present invention adopts the above-mentioned composite ion source device for coupling an atmospheric pressure interface orbital trap mass spectrometer, so that organic components of different polarities, ionization energies, and ion affinities in complex mixtures can be efficiently ionized. Through reasonable structural design, the device is coupled with a high-resolution orbital trap mass spectrometer with an atmospheric pressure interface to achieve a broadened detection range of complex organic components and improve the resolution and detection sensitivity of low-abundance or high-molecular-weight organic components.