Radiation durable organic compounds with high transparency in the vaccum ultraviolet, and method for preparing

Inactive Publication Date: 2005-07-07
EI DU PONT DE NEMOURS & CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0117] The compositions of the present invention are particularly useful in the formation of anti-reflection coatings and optical adhesives by virtue of low absorbance at 157 nm or 193 nm. The composition of the invention can be used to reduce the light reflected from the surface of a transparent substrate of a relatively higher index of refraction. This decrease in the reflected light, leads to a concomitant increase, in the light transmitted through the transparent substrate material.

Problems solved by technology

For a material to be useful in VUV photolithography it is necessary but not sufficient that it exhibit high transparency, particularly at 157 nm and 193 nm; it must also exhibit high photochemical stability known in the art as radiation durability.

Method used

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  • Radiation durable organic compounds with high transparency in the vaccum ultraviolet, and method for preparing
  • Radiation durable organic compounds with high transparency in the vaccum ultraviolet, and method for preparing
  • Radiation durable organic compounds with high transparency in the vaccum ultraviolet, and method for preparing

Examples

Experimental program
Comparison scheme
Effect test

example 3

[0140] Liquid sample cells having CaF2 windows spaced 6 micrometer and 25 micrometer apart were used. Transmitted light intensities were measured with the cells filled with H-Galden® ZT 85. H-Galden® ZT 85 was found have A / μm=0.0037 at 157 nm.

[0141] A sample of H-Galden® ZT 85 which was vigorously sparged for 1 minute was loaded into a liquid sample cell with 25 micrometer spacers, and then irradiated with 6 Joules / cm2 of 157 nm radiation. This sample showed a 10% PCD lifetime of 497 Joules / cm2.

example 4

[0145] A Hastelloy tube about two feet long by 1 inch in diameter was loaded with 3A molecular sieves, placed in a 310° C. tube oven, and purged with nitrogen gas overnight. The next morning the nitrogen purge gas was first passed through a liquid nitrogen chilled trap to make sure it was reasonably dry for the remainder of the experiment. The tube furnace was then turned off and the molecular sieves allowed to return to room temperature while maintaining the purge of dry nitrogen. About 1-2 grams of dry 3A molecular sieves were poured directly out the back end of the Hastelloy tube into a one ounce sample vial already containing 10 ml of H-Galden® ZT 85 solvent. The vial was immediately capped with a rubber septum and then rolled overnight to make sure of good contact between the solvent and the 3A molecular sieves.

[0146] The H-Galden® ZT 85 sample was filtered using a 0.45 micron glass syringe filter. A sample of thus treated H-Galden® ZT 85 was loaded into a liquid sample cell w...

example 5

[0149] The methods of Example 4 were repeated again using H-Galden® ZT85. The laser irradiation was done in an initial dose of 25.4 Joules / cm2 followed by a final dose of 87.5 Joules / cm2, to produce a total dose of 113 Joules / cm2. The 10% PCD lifetime over the initial 25.4 Joule dose was 868 Joule s / cm2.

[0150] The relative transmission to dose was determined as in Example 4 and is shown in FIG. 5 where M represents the same interruption in irradiation. The relative transmission to dose during the final 87.5 Joule dose was nearly constant.

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Abstract

This invention concerns radiation durable organic compositions which are well-suited for use in 157 nm lithography by virtue of their high transparency and excellent radiation durability, and to a process for the preparation thereof.

Description

FIELD OF THE INVENTION [0001] This invention is directed to the development of materials suitable for use in the fabrication of shaped articles by photolithographic techniques, more specifically to the fabrication of circuits by photolithography in the region of the electromagnetic spectrum known as the vacuum ultraviolet. Most specifically, this invention is directed to photolithography at wavelengths below 260 nm, particularly at 157 nm and 193 nm. In particular, this invention is directed to new organic compositions which are particularly well-suited for use in vacuum ultraviolet photolithography by virtue of their high transparency and excellent photochemical stability, and to a process for the preparation thereof. TECHNICAL BACKGROUND OF THE INVENTION [0002] As the electronics industry moves to adapt the methods of photolithography to the fabrication of ever-smaller circuit elements, resort is made to ever-smaller wavelengths of light in order to achieve the higher resolution i...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/039C07C19/08C10M101/00G03F7/004G03F7/20
CPCC07C19/08G03F7/70958G03F7/70341G03F7/2041G03F7/029
Inventor FRENCH, ROGER HARQUAILJONES, DAVID JOSEPHWHELAND, ROBERT CLAYTON
Owner EI DU PONT DE NEMOURS & CO
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