77 results about "Hydrofluorocarbon" patented technology

A method for forming a high aspect ratio (HAR) structure during a HAR etch process, the method comprises sequentially or simultaneously exposing the substrate to a vapor of an etchant including one or more hydrofluorocarbon or fluorocarbon compounds or one or more hydrogen-containing molecules and an additive compound, the substrate having a film disposed thereon and a patterned mask layer disposed on the film; activating a plasma to produce activated one or more hydrofluorocarbon or fluorocarbon compounds or activated one or more hydrogen-containing molecules and an activated additive compound; and allowing an etching reaction to proceed between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon compounds or the activated one or more hydrogen-containing molecules and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming the HAR patterned structure.

The invention discloses a triphenyl phosphate standard substance structure identification method, and relates to the technical field of fluorine-containing gas emission reduction, and the method comprises the following steps: obtaining a standardized analysis sample through fluorine-containing matrix separation, target substance enrichment and solvation treatment; a multi-dimensional chromatographic system and a heart cutting technology are adopted, and temperature programming optimization is combined to realize separation and purification of a sample; carrying out multi-dimensional structure analysis and confirmation by using gas chromatography-mass spectrometry, infrared spectroscopy and nuclear magnetic resonance technologies; a five-stage progressive identification algorithm is constructed, and systematic identification is realized by combining a confidence evaluation system and a fluorine-containing interference correction technology; establishing a structural integrity verification and purity quantitative evaluation standard, and outputting a standardized identification report; a method applicability database is established through multi-type fluorine-containing environment verification and process condition adaptability testing. The method effectively solves the problem of accurate identification of triphenyl phosphate in a complex fluorine-containing matrix, and realizes effective removal of interference components such as light gas, hydrofluorocarbon, perfluorinated compounds and the like.

Disclosed are novel electrolytes, and techniques for making and devices using such electrolytes, which are based on compressed gas solvents. Unlike conventional electrolytes, disclosed electrolytes are based on “compressed gas solvents” mixed with various salts, referred to as “compressed gas electrolytes.” Various embodiments of a compressed gas solvent include a material that is in a gas phase and has a vapor pressure above an atmospheric pressure at room temperature. The disclosed compressed gas electrolytes can have wide electrochemical potential windows, high conductivity, low temperature capability and / or high pressure solvent properties. Examples of a class of compressed gases that can be used as solvent for electrolytes include hydrofluorocarbons, in particular fluoromethane, difluoromethane, tetrafluoroethane, and pentafluoroethane. Also disclosed are battery and supercapacitor structures that use compressed gas solvent-based electrolytes and techniques for constructing such energy storage devices. Techniques for electroplating difficult-to-deposit materials using compressed gas electrolytes as an electroplating bath are also disclosed.

Mixtures configured to etch a thin film of an integrated circuit material are disclosed. The mixtures may include a first compound comprising one or more of: A, B, and C; and a second compound comprising one or more of: oxygen, argon, helium, nitrogen, octafluorocyclobutane (C4F8), hexafluorobutadiene (C4F6), carbonyl fluoride (COF2), difluoromethane (CH2F2), trifluoromethane (CHF3), carbon tetrafluoride (CF4), methyl fluoride (CH3F), octafluorocyclopentene (C5F8), 2,3,3,3-tetrafluoropro-l-ene (C3H2F4), 2,3,3,3-tetrafluoropro-l-ene (C3H2F4), hexafluoropropene (C3F6), hexafluorocyclopropane (C3F6), or 1,1,3,3,3-pentafhioropropene (C3HF5).

To provide a method capable of separating a monofunctional species, bifunctional species, etc. of a fluorinated ether compound having a polyfluoropolyether chain and a predetermined functional group in good yield and with high separation performance.A separation method for separating a compound represented by the formula (1) and a compound represented by the formula (2) from a mixture containing them by chromatography using a stationary phase and a mobile phase, wherein the mobile phase contains at least one type of specific solvent selected from a hydrofluoroolefin, a hydrochlorofluoroolefin, a chlorofluoroolefin, a cyclic hydrofluoroolefin, a cyclic hydrochlorofluoroolefin, a cyclic chlorofluoroolefin, a cyclic hydrofluorocarbon, a cyclic hydrochlorofluorocarbon, a cyclic chlorofluorocarbon and a perfluoroketone:A-(OX)m—O—Z—(R)n1  Formula (1)(R)n2—Z—(OX)m—O—Z—(R)n3  Formula (2)

This invention provides a plasma treatment method capable of forming a deposited film on the walls of a processing chamber and suppressing the diffusion of contaminants into a transport system. The plasma treatment method for plasma treating samples placed on a sample stage within a processing chamber includes: a first step of removing deposits in the processing chamber using plasma; a second step of depositing deposits in the processing chamber using a mixture of hydrofluorocarbon gas and argon (Ar) gas after the first step; a third step of selectively removing deposits from the sample stage using a mixture of oxygen (O2) gas and argon (Ar) gas after the second step; and a fourth step of plasma treating a predetermined number of samples after the third step.

This invention provides an etching method using silicon-containing hydrofluorocarbon. [Solution] The plasma dry etching method is based on the general formula: C x H y F z Si n (I) An etching gas mixture containing a compound having (1≦x≦6, 1≦y≦9, 1≦z≦15, n=1 or 2) is used, wherein the compound contains one or more methyl groups, and at least one methyl group is bonded to a Si atom. This method includes HAR dry etching processes, selective dry etching processes, and cyclic selective dry etching processes.

The invention relates to (i) a spinning fluid for flash spinning polyvinylidene fluoride (PVDF) or polyvinylidene fluoride blends from a spin dope comprising dichloromethane and a cyclic hydrofluorocarbon, and (ii) a method for producing a plexifibril of PVDF or PVDF blends using the spinning fluid.

Disclosed is a method for forming a high aspect ratio (HAR) structure in a substrate during a HAR etch process in a reaction chamber, the method comprising: sequentially or simultaneously exposing the substrate to a vapor of an etchant comprising a hydrofluorocarbon or fluorocarbon and an additive compound, the substrate is provided with a film arranged on the substrate and a patterned mask layer arranged on the film; activating the plasma to produce an activated hydrofluorocarbon or fluorocarbon and an activated additive compound; and allowing an etch reaction between the film uncovered by the patterned mask layer and the activated hydrofluorocarbon or fluorocarbon and the activated additive compound to selectively etch the film from the patterned mask layer, thereby forming a HAR patterned structure.

The present invention provides a method for producing a fluoropolymer, characterized in that the method comprises a step of producing a fluoropolymer by polymerizing a fluoromonomer containing tetrafluoroethylene, in a solution containing perfluorodiacyl peroxide and a fluorosolvent, by continuously adding the tetrafluoroethylene into a reaction vessel; the polymerization is suspension polymerization; the perfluorodiacyl peroxide is represented by the following formula (1); the fluorosolvent is at least one selected from the group consisting of perfluorocarbons, hydrofluorocarbons, and fluorine-containing ethers; the content of the perfluorodiacyl peroxide in the solution is 5 to 30 mass% relative to the total liquid; and the fluoropolymer has a polymerization unit based on tetrafluoroethylene.(C5F 11 COO)2(1), wherein the C5F 11 group is linear.

Disclosed are a method for controlling heating of an HVAC system for an electric vehicle and an HVAC system thereof. According to various embodiments, in an operation of the HVAC system including a main heating unit in which a first refrigerant circulates and an auxiliary heating unit in which a second refrigerant circulates, at least one of the first refrigerant and the second refrigerant may comprise at least one of: a natural refrigerant; a hydrofluorocarbon (HFC)-based refrigerant; a hydrofluoroolefin (HFO)-based refrigerant; a hydrochlorofluorocarbon (HCFC)-based refrigerant; a hydrocarbon-based refrigerant that is not a natural refrigerant; and a halon or a perfluorocarbon (PFC)-based refrigerant.

This invention provides a method and system for preparing trifluoropyruvate esters using a centrifugal method, relating to the field of organofluorine chemical synthesis technology. The centrifugal method for preparing trifluoropyruvate esters includes: circulating and spraying an alcohol-ether solution containing an aldehyde compound and a catalyst in a centrifugal reactor, and introducing hexafluoropropylene oxide to catalyze the reaction between the aldehyde compound and hexafluoropropylene oxide, yielding a reaction product; separating the reaction product into gas and liquid phases, and separating the gas phase product by distillation to obtain trifluoropyruvyl fluoride and hydrofluorocarbons; and esterifying the trifluoropyruvyl fluoride and alcohol in a microchannel reactor to obtain trifluoropyruvate esters. The centrifugal method for preparing trifluoropyruvate esters described in this invention has advantages such as simple and readily available raw materials, mild reaction conditions, and high conversion and yield.

The present invention relates to a process for preparing a refrigerant blend containing one or more purified hydrofluorocarbon compounds. [Solution] One or more hydrofluorocarbon compounds are recovered and purified from one or more refrigeration, air conditioning, or heat pump systems.

Provided is a method capable of separating 1-functional and 2-functional fluorine-containing ether compounds having a polyfluoropolyether chain and a prescribed functional group with good yield and high separation capacity. A separation method is a separation method for separating a compound represented by formula (1) and a compound represented by formula (2) from a mixture containing them using a chromatograph using a stationary phase and a mobile phase, wherein the mobile phase contains at least one specific solvent selected from the group consisting of hydrofluoroolefins, hydrochlorofluoroolefins, chlorofluoroolefins, cyclic hydrofluoroolefins, cyclic hydrochlorofluoroolefins, cyclic chlorofluoroolefins, cyclic hydrofluorocarbons, cyclic hydrochlorofluorocarbons, cyclic chlorofluorocarbons, and perfluoroketones.A‑(OX) m ‑O‑Z‑(R) n1 Formula (1) (R) n2 ‑Z‑(OX) m ‑O‑Z‑(R) n3 Formula (2)

A cryogenic etching method for forming an aperture comprises mounting the substrate in a reaction chamber, cooling the substrate to a temperature below 25°C, introducing an etching gas having general formulae Y3-CO-X, Y-(C=O)-X, R1-CO-X, R'-CO-R", R'-(C=O)-O-(C=O)-R", and COF-CxFyHz-COF wherein X and Y each is a halogen selected from F, Cl, Br, I; R1 is a fluorocarbon, hydrofluorocarbon, or hydrocarbon; R' and R" each is a fluorocarbon, hydrofluorocarbon, bromocarbon, hydrobromocarbon, chlorocarbon, hydrochlorocarbonor hydrocarbon, iodocarbon, hydroiodocarbon, into the reaction chamber; and x, y and z are integers, into the reaction chamber, converting the etching gas to a plasma, and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films so that the one or more silicon-containing films are selectively etched versus the patterned mask layer to form the aperture.

This application relates to the field of refrigeration systems, disclosing a refrigeration oil, a working fluid composition for refrigeration machines, and a refrigeration system. By adding a specific type of surfactant, this application significantly reduces the surface tension of the refrigeration oil, improves its compatibility with refrigerants such as hydrofluorocarbons, and reduces oil film formation or oil residue in the refrigeration system. The refrigeration oil described in this application has suitable viscosity and solubility viscosity, meeting the normal operating requirements of the compressor, while also effectively inhibiting the formation of oil film on the heat exchanger surface, thereby improving heat exchange efficiency. Furthermore, this refrigeration oil has good lubricity, low-temperature fluidity, and thermochemical stability, which can promote the circulation of the refrigeration oil in the refrigeration system pipeline, improve oil return efficiency, and extend the compressor's service life.

A method for selective plasma etching of silicon oxide relative to silicon nitride is described. The method includes providing a substrate containing a silicon oxide film and a silicon nitride film, and selectively etching the silicon oxide film relative to the silicon nitride film by: a1) exposing the substrate to a plasma-excited passivation gas containing carbon, sulfur, or both carbon and sulfur, wherein the plasma-excited passivation gas is free of fluorine or hydrogen, and b1) exposing the substrate to a plasma-excited etching gas containing a fluorine-containing gas. The method can further include an additional step a2) between a1) and b1): exposing the substrate to a plasma-excited additional passivation gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a hydrochlorocarbon gas, a hydrochlorofluorocarbon gas, or a hydrocarbon gas or a combination thereof.

This method of producing a hydrofluoroolefin includes contacting a mixture including a hydrofluorocarbon and at least one selected from the group consisting of CXA1XA2═CXA3XA4, CXA5≡CXA6, and CXA7XA8XA9—CXA10XA11XA12 with a catalyst, and obtaining the hydrofluoroolefin by a dehydrofluorination reaction of the hydrofluorocarbon, each of XA1 to XA12 independently represents a hydrogen atom, a fluorine atom, a chlorine atom, or a hydrocarbon chain having 1 to 8 carbon atoms, at least one of XA1 to XA4 has at least one of a hydrogen atom or a chlorine atom, at least one of XA5 or XA6 has at least one of a hydrogen atom or a chlorine atom, and at least one of XA7 to XA12 has a halogen atom other than a fluorine atom.

Provided is a separation method with which a halogenated unsaturated hydrocarbon and a halogenated saturated hydrocarbon can be separated well.　In this separation method, an adsorbent and a composition containing a halogenated unsaturated hydrocarbon and a halogenated saturated hydrocarbon are brought into contact, the halogenated unsaturated hydrocarbon or the halogenated saturated hydrocarbon is selectively made to adsorb to the adsorbent, and the halogenated unsaturated hydrocarbon and the halogenated saturated hydrocarbon are separated. The halogenated unsaturated hydrocarbon is at least one type of halogenated unsaturated hydrocarbon selected from the group consisting of hydrofluoroolefins and hydrochlorofluoroolefins, the halogenated saturated hydrocarbon is at least one type of halogenated saturated hydrocarbon selected from the group consisting of hydrofluorocarbons and hydrochlorofluorocarbons, and the adsorbent is at least one type of adsorbent selected from [Fe2(O2)(dobdc)], [Co(AIN)2], and Co-gallate.

This invention provides an etching method using silicon-containing hydrofluorocarbon. [Solution] The plasma dry etching method is based on the general formula: C x H y F z Si n (I) An etching gas mixture containing a compound having (1≦x≦6, 1≦y≦9, 1≦z≦15, n=1 or 2) is used, wherein the compound contains one or more methyl groups, and at least one methyl group is bonded to a Si atom. This method includes HAR dry etching processes, selective dry etching processes, and cyclic selective dry etching processes.

A method for producing a hydrofluoroolefin, which comprises bringing a mixture containing a hydrofluorocarbon and at least one member selected from the group consisting of CXA1 XA2 = CXA3XA4, CXA5 = CXA6, and CXA7XA8XA9-CXA10XA11XA12 into contact with a catalyst, and obtaining a hydrofluoroolefin by a dehydrofluorination reaction of the hydrofluorocarbon. XA1-XA12 each independently represents a hydrogen atom, a fluorine atom, a chlorine atom, or a C1-8 hydrocarbon chain, at least one of XA1-XA4 has at least one of a hydrogen atom and a chlorine atom, at least one of XA5 and XA6 has at least one of a hydrogen atom and a chlorine atom, and at least one of XA7-XA12 has a halogen atom other than a fluorine atom.

The present invention relates to a cleaning agent composition which is excellent in cleaning property and does not corrode plastic substrates such as polycarbonate and polystyrene which are not resistant to solvents. The cleaning agent composition of the present invention comprises the following (A) to (C) components, the mass ratio of the (A) component and the (B) component being 11:89 to 99:1, (A) cis-1-chloro-3,3,3-trifluoropropene, (B) one or more compounds selected from the group consisting of hydrofluoroolefins, hydrofluorocarbons and hydrofluoroethers which do not contain a chlorine atom, and (C) a hydrocarbon solvent.

Disclosed is an etching method for selectively etching one or more silicon-containing films to form a high aspect ratio hole by using a patterned mask layer deposited on top of the one or more silicon-containing films in a substrate, the method comprising: mounting the substrate in a processing chamber; introducing an etching gas containing a vapor of an oxygen-containing hydrofluorocarbon into the processing chamber; converting the etching gas into a plasma; and allowing an etch reaction between the plasma and the one or more silicon-containing films such that the one or more silicon-containing films are selectively etched with respect to the patterned mask layer to form the high aspect ratio hole, where the oxygen-containing hydrofluorocarbon has the general formula CxHyFzOn, where 2 < = x < = 13, 1 < = y < = 15, 1 < = z < = 21, 1 < = n < = 3.

An etching method for forming high aspect ratio apertures by selectively etching one or more silicon-containing films in a substrate using a patterned mask layer deposited on top of the one or more silicon-containing films includes mounting the substrate in a process chamber; introducing an etching gas containing vapor of an oxygen-containing hydrofluorocarbon into the process chamber; converting the etching gas into a plasma; and allowing an etching reaction to proceed between the plasma and the one or more silicon-containing films such that the one or more silicon-containing films are selectively etched relative to the patterned mask layer to form high aspect ratio apertures, wherein the oxygen-containing hydrofluorocarbon is a compound represented by the general formula C x H y F z O n (where 2≦x≦13, 1≦y≦15, 1≦z≦21, and 1≦n≦3).

Disclosed are a method and apparatus for operating a virtual HVAC model implemented as a digital twin. The method is configured to simulate and control thermal conditions within a vehicle environment. The method comprises receiving input data related to vehicle operating conditions and environmental factors, and processing the input data using a trained artificial intelligence model to simulate thermal behavior within a vehicle cabin. The virtual HVAC system is then controlled based on the simulation to evaluate performance and optimize energy usage. The virtual HVAC model utilizes a refrigerant selected from a wide range of types, including natural refrigerants, hydrofluorocarbons (HFCs), hydrofluoroolefins (HFOs), and others.

The technical problem of the present invention is to provide a solid with excellent pulverization properties and to provide a composition comprising said solid, a molded article obtained by molding said solid, and a molded article obtained by molding said composition. The solid of the present invention comprises a copolymer selected from formula (1) CX. 1 2 = CX 2 (CF2) m The compound represented by F and formula (2) CF2=CF-O-(CF2) n F represents a specific compound, and the solid of the solvent, wherein the copolymer contains tetrafluoroethylene-based units, ethylene-based units, and units based on the specific compound, and the solvent comprises a fluorinated solvent having hydrogen atoms and fluorine atoms that may have ether bonds, and the fluorinated solvent comprises having formula (3)CF3(CF3)2). p The hydrofluorocarbon represented by the group -, wherein the total content of the hydrofluorocarbon and the specific compound is less than 90.0% by mass relative to the total content of the solvent and the specific compound.

The invention relates to the technical field of hydrofluorocarbon compound preparation, in particular to a 1, 1, 1, 2-tetrafluoroethane energy-saving preparation device, and provides a 1, 1, 1, 2-tetrafluoroethane energy-saving preparation device aiming at the risk of gas leakage existing in the filter element replacement process of an existing filter, the 1, 1, 1, 2-tetrafluoroethane energy-saving preparation device comprises a multi-stage reactor, a multi-stage rectifying tower and a filtering device, the filtering device comprises a filtering box, and the filtering box is provided with a filtering cavity. A filter cartridge capable of rotating is arranged in the filter box, an isolation frame matched with the filter cartridge is further arranged in the filter box, the interior of the filter box is divided into a filter area, a discharging area and a feeding area through the isolation frame, a gas conveying pipeline matched with the gas channels is installed in the filter area, filter baffles are arranged at the bottoms of the gas channels, and filter elements are placed on the filter baffles; when the filter cylinder rotates, the filter baffle can move towards the inner side when moving to the discharging area, and the filter baffle can be located at the outermost side end when moving to the filtering area and the feeding area; the filter element can be rapidly replaced under the sealed condition, manpower resources are saved, and the risk of waste gas leakage is reduced.

To provide a mixture containing a hydrofluorocarbon, a fluoroolefin, an iodide-containing compound and other fluorinated compounds, which has a low ozone depletion potential and a low global warming potential.SOLUTION: Provided are blowing agents for polyurethane and polyisocyanurate foams comprising Z-1-chloro - 2333 - tetrafluoropentene (HCFO - 1224yd (Z)) and cyclopentane in amounts of 65 wt% to 99 wt% and 1 wt% to 35 wt%, respectively. There is further provided a foam formed from a polyurethane or polyisocyanurate foam and a blowing agent comprising Z-l-chloro - 2333 - tetrafluoropentene (HCFO - 1224yd (Z)) and cyclopentane having a low initial lambda value.SELECTED DRAWING: Figure 1

The utility model relates to a monitoring device for ozone depleted substances and hydrofluorocarbon in atmosphere, and belongs to the technical field of chromatography-mass spectrometry. According to the scheme, the device mainly comprises a target object trapping pipeline which comprises a trapping module used for trapping a target object in sample gas; the focusing analysis module is used for performing focusing and chromatographic separation on the target object and then performing detection; the analysis pipeline comprises an analysis carrier gas inlet and a trapping switching module, and the trapping switching module is used for enabling the two ends of the trapping module to be connected with the analysis carrier gas inlet and the focusing analysis module respectively; the purification pipeline comprises a capillary chromatographic column purification module, the capillary chromatographic column purification module is used for removing interferents in a target object, and when the purification pipeline is in a first state, the inert gas sequentially passes through the trapping module and the capillary chromatographic column purification module; in the second state, the inert gas sequentially passes through the capillary chromatographic column purification module and the trapping module.

The invention discloses an etching method of a semiconductor structure, which comprises the following steps of: providing a semiconductor substrate, forming a silicon oxide layer, a silicon nitride layer and a photoresist layer on the semiconductor substrate in sequence, and forming a photoresist opening on the photoresist layer; mixed gas formed by hydrofluorocarbon, oxygen and argon is adopted to etch the silicon nitride layer based on the photoresist opening, in the etching process, the mass fraction ratio of H to F decomposed in the reaction cavity ranges from 1: 15 to 1: 20, the mass fraction of C ranges from the mass fraction of H to the mass fraction of F, the selective etching ratio of silicon nitride to silicon oxide ranges from 8: 1 to 9: 1, and the silicon nitride opening is obtained. By means of the scheme, silicon nitride can be etched at a high speed while lower silicon oxide is protected, the selective etching ratio of silicon nitride to silicon oxide ranges from 8: 1 to 9: 1, and good etching morphology is formed.